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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Mfr |
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| IRFIBE20GPBF | Vishay Siliconix | $2.34 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfibe20g-datasheets-8616.pdf | 800V | 1.4A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 6.5Ohm | 3 | No | 1 | Single | 30W | 1 | TO-220-3 | 530pF | 8.2 ns | 17ns | 27 ns | 58 ns | 1.4A | 20V | 800V | 4V | 30W Tc | 6.5Ohm | 800V | N-Channel | 530pF @ 25V | 6.5Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 38nC @ 10V | 6.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4114DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4114dyt1e3-datasheets-4177.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 6MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 30 ns | 13ns | 30 ns | 60 ns | 20A | 16V | SILICON | SWITCHING | 2.1V | 2.5W Ta 5.7W Tc | 20V | N-Channel | 3700pF @ 10V | 6m Ω @ 10A, 10V | 2.1V @ 250μA | 20A Tc | 95nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| IRF840PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf840-datasheets-7243.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 11 Weeks | 6.000006g | No SVHC | 3 | AVALANCHE RATED | Tin | No | e3 | 3 | 1 | Single | 125W | 1 | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | SILICON | SWITCHING | 4V | 125W Tc | TO-220AB | 970 ns | 8A | 0.85Ohm | 500V | N-Channel | 1300pF @ 25V | 4 V | 850m Ω @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4459BDY-T1-GE3 | Vishay Siliconix | $0.76 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4459bdyt1ge3-datasheets-3519.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 30V | 3.1W Ta 5.6W Tc | P-Channel | 3490pF @ 15V | 4.9mOhm @ 15A, 10V | 2.2V @ 250μA | 20.5A Ta 27.8A Tc | 84nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7111EDN-T1-GE3 | Vishay Siliconix | $3.90 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7111ednt1ge3-datasheets-8071.pdf | PowerPAK® 1212-8 | 14 Weeks | No SVHC | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | -60A | 30V | -1.6V | 52W Tc | P-Channel | 5860pF @ 15V | 8.55m Ω @ 15A, 4.5V | 1.6V @ 250μA | 60A Tc | 46nC @ 2.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7738DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7738dpt1ge3-datasheets-5509.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 10ns | 10 ns | 25 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 4V | 5.4W Ta 96W Tc | 7.7A | 45 mJ | 150V | N-Channel | 2100pF @ 75V | 38m Ω @ 7.7A, 10V | 4V @ 250μA | 30A Tc | 53nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SQD40031EL_GE3 | Vishay Siliconix | $1.59 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40031elge3-datasheets-8857.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 30V | 136W Tc | P-Channel | 15000pF @ 25V | 3.2mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 280nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR668DP-T1-GE3 | Vishay Siliconix | $2.44 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr668dpt1ge3-datasheets-6099.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 100V | 6.25W Ta 125W Tc | N-Channel | 5400pF @ 50V | 4.8mOhm @ 20A, 10V | 3.4V @ 250μA | 23.2A Ta 95A Tc | 108nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR184DP-T1-RE3 | Vishay Siliconix | $1.80 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir184dpt1re3-datasheets-1800.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 5W Ta 62.5W Tc | 4.7mOhm | N-Channel | 1490pF @ 30V | 5.8mOhm @ 10A, 10V | 3.4V @ 250μA | 20.7A Ta 73A Tc | 32nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM35N30-97_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqm35n3097ge3-datasheets-6526.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 300V | 300V | 375W Tc | 35A | 75A | 0.097Ohm | 54 mJ | N-Channel | 5650pF @ 25V | 97m Ω @ 10A, 10V | 3.5V @ 250μA | 35A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB46ELP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
- | Vishay Siliconix | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE808DF-T1-E3 | Vishay Siliconix | $1.36 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie808dft1e3-datasheets-7343.pdf | 10-PolarPAK® (L) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 14 Weeks | No SVHC | 1.6mOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 125mW | 1 | FET General Purpose Power | R-XDSO-N4 | 25 ns | 55ns | 10 ns | 55 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 5.2W Ta 125W Tc | 220A | N-Channel | 8800pF @ 10V | 1.6m Ω @ 25A, 10V | 3V @ 250μA | 60A Tc | 155nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIA431DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia431djt1ge3-datasheets-1677.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 4 | 14 Weeks | 25MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 6 | 1 | Single | 3.5W | 1 | Other Transistors | S-PDSO-N4 | 22 ns | 25ns | 25 ns | 65 ns | -12A | 8V | SILICON | DRAIN | SWITCHING | 20V | 3.5W Ta 19W Tc | 30A | -20V | P-Channel | 1700pF @ 10V | -850 mV | 25m Ω @ 6.5A, 4.5V | 850mV @ 250μA | 12A Tc | 60nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SI7464DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7464dpt1e3-datasheets-2721.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 1.8W | 1 | R-PDSO-F5 | 10 ns | 12ns | 15 ns | 15 ns | 1.8A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 8A | 0.24Ohm | 0.45 mJ | 200V | N-Channel | 50ns | 35ns | 240m Ω @ 2.8A, 10V | 4V @ 250μA | 1.8A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7634BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7634bdpt1ge3-datasheets-3414.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 5.4mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 30 ns | 12ns | 12 ns | 34 ns | 22.5A | 20V | SILICON | DRAIN | 1.4V | 5W Ta 48W Tc | 40A | 70A | 45 mJ | 30V | N-Channel | 3150pF @ 15V | 5.4m Ω @ 15A, 10V | 2.6V @ 250μA | 40A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFR9220TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | 200V | 42W Tc | 1.5Ohm | P-Channel | 340pF @ 25V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF710PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf710pbf-datasheets-8514.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3.6Ohm | 3 | 1 | Single | 36W | 1 | TO-220AB | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 4V | 36W Tc | 540 ns | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 2 V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI1032X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1032rt1ge3-datasheets-5605.pdf | SC-89, SOT-490 | 1.7mm | 800μm | 950μm | Lead Free | 3 | 14 Weeks | 29.993795mg | Unknown | 5Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 3 | 1 | Single | 30 | 300mW | 1 | FET General Purpose Power | 50 ns | 25ns | 25 ns | 50 ns | 200mA | 6V | SILICON | SWITCHING | 20V | 20V | 700mV | 300mW Ta | 0.2A | N-Channel | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 200mA Ta | 0.75nC @ 4.5V | 1.5V 4.5V | ±6V | ||||||||||||||||||||||||||||||||
| SI3464DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3464dvt1ge3-datasheets-0715.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 30 | 2W | 1 | FET General Purpose Powers | 3 ns | 12ns | 8 ns | 22 ns | 8A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta 3.6W Tc | 8A | 0.024Ohm | 20V | N-Channel | 1065pF @ 10V | 450 mV | 24m Ω @ 7.5A, 4.5V | 1V @ 250μA | 8A Tc | 18nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| IRLZ34PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irlz34pbf-datasheets-1446.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 30A | 10V | 60V | 2V | 88W Tc | 50mOhm | 60V | N-Channel | 1600pF @ 25V | 2 V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| IRFD9020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irfd9020pbf-datasheets-1993.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 4 | 8 Weeks | Unknown | 280mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | Single | 1.3W | 1 | Other Transistors | 13 ns | 68ns | 29 ns | 15 ns | 1.6A | 20V | SILICON | SWITCHING | -4V | 1.3W Ta | 60V | P-Channel | 570pF @ 25V | 280m Ω @ 960mA, 10V | 4V @ 1μA | 1.6A Ta | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFU9010PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9010pbf-datasheets-4325.pdf | -5.3A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 8 Weeks | 500mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | 1 | Other Transistors | 6.1 ns | 47ns | 35 ns | 13 ns | 5.3A | SILICON | DRAIN | SWITCHING | 25W Tc | 21A | 50V | P-Channel | 240pF @ 25V | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 5.3A Tc | 9.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFI530GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfi530gpbf-datasheets-3544.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | 3 | No | 1 | Single | 42W | 1 | TO-220-3 | 670pF | 8.5 ns | 28ns | 25 ns | 34 ns | 9.7A | 20V | 100V | 42W Tc | 160mOhm | 100V | N-Channel | 670pF @ 25V | 160mOhm @ 5.8A, 10V | 4V @ 250μA | 9.7A Tc | 33nC @ 10V | 160 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ48GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/vishaysiliconix-irfiz48gpbf-datasheets-4165.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 18mOhm | 3 | No | 1 | Single | 50W | 1 | TO-220-3 | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 37A | 20V | 60V | 4V | 50W Tc | 18mOhm | 60V | N-Channel | 2400pF @ 25V | 4 V | 18mOhm @ 22A, 10V | 4V @ 250μA | 37A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF820SPBF | Vishay Siliconix | $0.38 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820spbf-datasheets-4619.pdf | 500V | 2.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 12 Weeks | 1.437803g | 3Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 360pF | 8 ns | 8.8ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 3.1W Ta 50W Tc | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLI540GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli540gpbf-datasheets-4964.pdf | TO-220-3 Full Pack, Isolated Tab | 11 Weeks | 3 | No | 48W | 1 | TO-220-3 | 2.2nF | 8.5 ns | 170ns | 80 ns | 35 ns | 17A | 10V | 100V | 48W Tc | N-Channel | 2200pF @ 25V | 77mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 64nC @ 5V | 77 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP14N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp14n50de3-datasheets-5260.pdf | TO-220-3 | 3 | 15 Weeks | 6.000006g | 3 | No | 1 | Single | 208W | 1 | 16 ns | 27ns | 26 ns | 29 ns | 14A | 30V | SILICON | SWITCHING | 500V | 500V | 208W Tc | TO-220AB | 0.4Ohm | 56 mJ | N-Channel | 1144pF @ 100V | 400m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIUD412ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-siud412edt1ge3-datasheets-5952.pdf | PowerPAK® 0806 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | 1.25W Ta | 0.34Ohm | N-Channel | 21pF @ 6V | 340m Ω @ 500mA, 4.5V | 900mV @ 250μA | 500mA Tc | 0.71nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP350PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp350pbf-datasheets-8897.pdf | 400V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | No SVHC | 300mOhm | 3 | Tin | 16A | 400V | 1 | Single | 190W | 1 | TO-247-3 | 2.6nF | 16 ns | 49ns | 47 ns | 87 ns | 16A | 20V | 400V | 4V | 190W Tc | 570 ns | 300mOhm | 400V | N-Channel | 2600pF @ 25V | 2 V | 300mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 150nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF510STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf510spbf-datasheets-1259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | TO-263 (D2Pak) | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 3.7W Ta 43W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V |
