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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Number of Functions | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | On-state Resistance Match-Nom | Switching | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4493DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4493dyt1e3-datasheets-6333.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.5W | 1 | Other Transistors | R-PDSO-G8 | 110 ns | 150ns | 150 ns | 220 ns | 10A | 12V | SILICON | SWITCHING | 1.5W Ta | MS-012AA | 0.00775Ohm | 20V | P-Channel | 7.75m Ω @ 14A, 4.5V | 1.4V @ 250μA | 10A Ta | 110nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG535DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg535dje3-datasheets-2519.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 15V | 500MHz | Lead Free | 50μA | 28 | 4.190003g | 16.5V | 10V | 90Ohm | 28 | yes | No | 1 | 5μA | e3 | T-Switch Configuration | Matte Tin (Sn) | Video | 625mW | DUAL | 15V | 2.54mm | DG535 | 28 | 1 | 625mW | 300 ns | 150 ns | Multiplexer | 300 ns | Single | 16 | 90Ohm | 9Ohm | BREAK-BEFORE-MAKE | 0.02A | 16:1 | 10V~16.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4646DY-T1-GE3 | Vishay Siliconix | $4.95 |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4646dyt1e3-datasheets-6335.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | No | 1 | 8-SO | 1.79nF | 23 ns | 13ns | 12 ns | 29 ns | 12A | 20V | 30V | 3W Ta 6.25W Tc | 11.5mOhm | 30V | N-Channel | 1790pF @ 15V | 11.5mOhm @ 10A, 10V | 2.5V @ 1mA | 12A Tc | 45nC @ 10V | 11.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG534ADN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 600μA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg534adne3-datasheets-2500.pdf | 20-LCC (J-Lead) | 9.04mm | 3.69mm | 9.04mm | 500MHz | 2mA | 722.005655mg | 18V | 10V | 90Ohm | 20 | no | T-Switch Configuration | Ultrasound, Video | 450mW | 20 | 2 | 450mW | 300 ns | 175 ns | 15V | 12V | Multiplexer | 300 ns | Dual, Single | 10V | 4 | 90Ohm | 90Ohm | 2:1 | 10V~21V | SPDT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4888DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4888dyt1ge3-datasheets-6431.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 14 ns | 10ns | 20 ns | 44 ns | 11A | 20V | SILICON | SWITCHING | 30V | 30V | 1.6W Ta | 0.007Ohm | N-Channel | 7m Ω @ 16A, 10V | 1.6V @ 250μA | 11A Ta | 24nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG540AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -40°C | 500MHz | 3.5mA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 20-DIP (0.300, 7.62mm) | 14 Weeks | 18V | 10V | 60Ohm | 20 | No | 3.5mA | RGB, T-Switch Configuration | Video | 900mW | 4 | 20-DIP | 500MHz | SPST | 70 ns | 50 ns | 15V | Multiplexer | Dual, Single | 10V | 60Ohm | 60Ohm | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5475BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5475bdct1ge3-datasheets-6471.pdf | 8-SMD, Flat Lead | 8 | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 2.5W | 1 | 15ns | 72 ns | 65 ns | 7.7A | 8V | SILICON | 2.5W Ta 6.3W Tc | 12V | P-Channel | 1400pF @ 6V | 28m Ω @ 5.6A, 4.5V | 1V @ 250μA | 6A Ta | 40nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4948BEY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4948beyt1ge3-datasheets-1222.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 120MOhm | 8 | EAR99 | No | e3 | MATTE TIN | 1.4W | GULL WING | 260 | SI4948 | 8 | 2 | Dual | 30 | 2.4W | 2 | 10 ns | 15ns | 35 ns | 50 ns | -2.4A | 20V | SILICON | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | -3V | 2 P-Channel (Dual) | -3 V | 120m Ω @ 3.1A, 10V | 3V @ 250μA | 2.4A | 22nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5449DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5449dct1e3-datasheets-6469.pdf | 8-SMD, Flat Lead | 85mOhm | Single | 1.3W | 1206-8 ChipFET™ | 35 ns | 3.1A | 12V | 30V | 1.3W Ta | 85mOhm | 30V | P-Channel | 85mOhm @ 3.1A, 4.5V | 600mV @ 250μA (Min) | 3.1A Ta | 11nC @ 4.5V | 85 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4816BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4816bdyt1e3-datasheets-1915.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 18.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 1.25W | DUAL | GULL WING | 260 | SI4816 | 8 | 2 | Single | 40 | 2 | 150°C | 13 ns | 9ns | 9 ns | 31 ns | 5.8A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 1W 1.25W | 2 N-Channel (Half Bridge) | 3 V | 18.5m Ω @ 6.8A, 10V | 3V @ 250μA | 5.8A 8.2A | 10nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7138DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7138dpt1e3-datasheets-6038.pdf | PowerPAK® SO-8 | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | 260 | Single | 30 | 5.4W | 8 ns | 30A | 20V | 2V | 5.4W Ta 96W Tc | 60V | N-Channel | 6900pF @ 30V | 2 V | 7.8m Ω @ 19.7A, 10V | 4V @ 250μA | 30A Tc | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6913DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6913dqt1ge3-datasheets-3011.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | No SVHC | 21mOhm | 8 | yes | EAR99 | Tin | No | e3 | 830mW | GULL WING | 260 | SI6913 | 8 | Dual | 40 | 830mW | 2 | Other Transistors | 45 ns | 80ns | 80 ns | 130 ns | -4.4A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -900mV | 4.9A | -12V | 2 P-Channel (Dual) | 21m Ω @ 5.8A, 4.5V | 900mV @ 400μA | 4.9A | 28nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7388DP-T1-E3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7388dpt1e3-datasheets-6596.pdf | PowerPAK® SO-8 | 5.969mm | 1.0668mm | 5.0038mm | Lead Free | 7MOhm | 8 | No | Single | 5W | PowerPAK® SO-8 | 14 ns | 10ns | 10 ns | 44 ns | 12A | 20V | 30V | 1.9W Ta | 7mOhm | 30V | N-Channel | 7mOhm @ 19A, 10V | 1.6V @ 250μA | 12A Ta | 24nC @ 5V | 7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9945BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si9945bdyt1ge3-datasheets-4914.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 58mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | GULL WING | 260 | SI9945 | 8 | 2 | Dual | 30 | 3.1W | 2 | FET General Purpose Powers | 150°C | 10 ns | 15ns | 10 ns | 20 ns | 4.3A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 5.3A | 60V | 2 N-Channel (Dual) | 665pF @ 15V | 2.5 V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 5.3A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7457DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7457dpt1e3-datasheets-6639.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.2W | 1 | R-XDSO-C5 | 20 ns | 30ns | 60 ns | 105 ns | 7.9A | 20V | SILICON | DRAIN | SWITCHING | 100V | 5.2W Ta 83.3W Tc | 35A | 0.042Ohm | -100V | P-Channel | 5230pF @ 50V | 42m Ω @ 7.9A, 10V | 4V @ 250μA | 28A Tc | 160nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4559ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4559adyt1e3-datasheets-2899.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | 58MOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.4W | DUAL | GULL WING | 260 | SI4559 | 8 | 2 | 30 | 2W | 2 | Other Transistors | 30 ns | 70ns | 30 ns | 40 ns | 4.5A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.1W 3.4W | 4.3A | 6.1 mJ | 60V | N and P-Channel | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 5.3A 3.9A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7476DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7476dpt1e3-datasheets-6287.pdf | PowerPAK® SO-8 | 5.3mOhm | Single | 1.9W | PowerPAK® SO-8 | 130 ns | 25A | 20V | 40V | 1.9W Ta | 5.3mOhm | 40V | N-Channel | 5.3mOhm @ 25A, 10V | 3V @ 250μA | 15A Ta | 177nC @ 10V | 5.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3590DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3590dvt1e3-datasheets-5561.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | DUAL | GULL WING | 260 | SI3590 | 6 | 2 | 30 | 830mW | 2 | Other Transistors | 5 ns | 2A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.5V | 0.077Ohm | 30V | N and P-Channel | 1.5 V | 77m Ω @ 3A, 4.5V | 1.5V @ 250μA | 2.5A 1.7A | 4.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7446BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7446bdpt1ge3-datasheets-6615.pdf | PowerPAK® SO-8 | Lead Free | 8 | Single | 1.9W | 1 | PowerPAK® SO-8 | 3.076nF | 16ns | 16 ns | 120 ns | 12A | 20V | 30V | 1.9W Ta | 7.5mOhm | 30V | N-Channel | 3076pF @ 15V | 7.5mOhm @ 19A, 10V | 3V @ 250μA | 12A Ta | 33nC @ 5V | 7.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3900DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3900dvt1e3-datasheets-4514.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | 6 | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3900 | 6 | Dual | 30 | 830mW | 2 | 10 ns | 30ns | 6 ns | 14 ns | 2.4A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 2A | 20V | 2 N-Channel (Dual) | 125m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 2A | 4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3805DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3805dvt1e3-datasheets-6320.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 19.986414mg | Unknown | 84mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 30 | 1.1W | 1 | Other Transistors | 18 ns | 40ns | 10 ns | 18 ns | -3.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -1.5V | 1.1W Ta 1.4W Tc | 3A | -20V | P-Channel | 330pF @ 10V | -1.5 V | 84m Ω @ 3A, 10V | 1.5V @ 250μA | 3.3A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ328DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz328dtt1ge3-datasheets-0098.pdf | 8-PowerWDFN | 14 Weeks | 8-Power33 (3x3) | 25V | 2.9W Ta 15W Tc 3.6W Ta 16.2W Tc | 2 N-Channel (Dual) | 325pF @ 10V 600pF @ 10V | 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V | 2.5V @ 250μA | 11.1A Ta 25.3A Tc 15A Ta 30A Tc | 6.9nC @ 10V, 11.3nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5402BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5402bdct1e3-datasheets-8444.pdf | 8-SMD, Flat Lead | 8 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 30 | 1.3W | 1 | FET General Purpose Powers | 10 ns | 10ns | 10 ns | 27 ns | 6.1A | 20V | SILICON | 1V | 1.3W Ta | 4.9A | 0.035Ohm | 30V | N-Channel | 35m Ω @ 4.9A, 10V | 3V @ 250μA | 4.9A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ348DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz348dtt1ge3-datasheets-0284.pdf | 8-PowerWDFN | 14 Weeks | 8-Power33 (3x3) | 30V | 3.7W Ta 16.7W Tc | 2 N-Channel (Dual) | 820pF @ 15V | 7.12mOhm @ 15A, 10V | 2.4V @ 250μA | 18A Ta 30A Tc | 18.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB455EDK-T1-GE3 | Vishay Siliconix | $4.31 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib455edkt1ge3-datasheets-2439.pdf | PowerPAK® SC-75-6L | 3 | 6 | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 6 | Single | NOT SPECIFIED | 13W | 1 | Other Transistors | Not Qualified | S-XDSO-N3 | 3.2 ns | 7.8A | 10V | SILICON | DRAIN | SWITCHING | 12V | 2.4W Ta 13W Tc | 9A | 25A | 0.027Ohm | -12V | P-Channel | 27m Ω @ 5.6A, 4.5V | 1V @ 250μA | 9A Tc | 30nC @ 8V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA778DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sia778djt1ge3-datasheets-3238.pdf | PowerPAK® SC-70-6 Dual | 6 | 18 Weeks | 6 | yes | EAR99 | No | 5W | 260 | SIA778 | 6 | 2 | 40 | 1.9W | 2 | FET General Purpose Powers | 1.5A | SILICON | DRAIN | SWITCHING | 12V 20V | METAL-OXIDE SEMICONDUCTOR | 6.5W 5W | 4.5A | 2 N-Channel (Dual) | 500pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 4.5A 1.5A | 15nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR838DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir838dpt1ge3-datasheets-2564.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 40 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 11ns | 10 ns | 23 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5.4W Ta 96W Tc | 60A | 0.033Ohm | 45 mJ | 150V | N-Channel | 2075pF @ 75V | 33m Ω @ 8.3A, 10V | 4V @ 250μA | 35A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6562CDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6562cdqt1ge3-datasheets-4119.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.7W | DUAL | GULL WING | 260 | SI6562 | 8 | 2 | 30 | 2 | Other Transistors | 150°C | 30 ns | 25ns | 25 ns | 45 ns | 6.1A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 1.6W 1.7W | 6.7A | 20V | N and P-Channel | 850pF @ 10V | 22m Ω @ 5.7A, 4.5V | 1.5V @ 250μA | 6.7A 6.1A | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7856ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7856adpt1e3-datasheets-3144.pdf | PowerPAK® SO-8 | Lead Free | 5 | 3.7mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 21 ns | 15ns | 15 ns | 100 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 30V | N-Channel | 3.7m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 55nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4590DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4590dyt1ge3-datasheets-5123.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 183mOhm | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 8 | 30 | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 2.4W 3.4W | 5.6A | N and P-Channel | 360pF @ 50V | 57m Ω @ 2A, 10V | 2.5V @ 250μA | 3.4A 2.8A | 11.5nC @ 10V |
