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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Frequency Stability | Load Capacitance | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7404DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7404dnt1e3-datasheets-6658.pdf | PowerPAK® 1212-8 | 3.1496mm | 1.0668mm | 3.1496mm | Lead Free | 5 | 13mOhm | 8 | yes | EAR99 | FAST SWITCHING | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | FET General Purpose Power | Not Qualified | S-XDSO-C5 | 27 ns | 39ns | 39 ns | 64 ns | 8.5A | 12V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 40A | 30V | N-Channel | 13m Ω @ 13.3A, 10V | 1.5V @ 250μA | 8.5A Ta | 30nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SI6954ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si6954adqt1e3-datasheets-6320.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 53mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 830mW | GULL WING | 260 | SI6954 | 8 | 2 | Dual | 40 | 830mW | 2 | 12 ns | 10ns | 10 ns | 23 ns | 3.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 3.1A | 30V | 2 N-Channel (Dual) | 1 V | 53m Ω @ 3.4A, 10V | 1V @ 250μA (Min) | 3.1A | 16nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI7457DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7457dpt1e3-datasheets-6639.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | R-PDSO-C5 | 60 ns | 7.9A | 20V | SILICON | DRAIN | 100V | 5.2W Ta 83.3W Tc | 28A | 35A | 0.042Ohm | 80 mJ | -100V | P-Channel | 5230pF @ 50V | 42m Ω @ 7.9A, 10V | 4V @ 250μA | 28A Tc | 160nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ320DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | PowerPAIR®, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-siz320dtt1ge3-datasheets-7454.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 150°C | 16.7W 31W | 25V | 2 N-Channel (Dual) | 660pF @ 12.5V 1370pF @ 12.5V | 8.3m Ω @ 8A, 10V, 4.24m Ω @ 10A, 10V | 2.4V @ 250μA | 30A Tc 40A Tc | 8.9nC @ 4.5V, 11.9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1403CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1403cdlt1ge3-datasheets-1941.pdf | 6-TSSOP, SC-88, SOT-363 | 2.05mm | 900μm | 1.25mm | Lead Free | 6 | 7.512624mg | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 6 | 1 | 600mW | 1 | Other Transistors | 18 ns | 26ns | 18 ns | 30 ns | 2.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600mV | 600mW Ta 900mW Tc | 20V | P-Channel | 281pF @ 10V | 140m Ω @ 1.6A, 4.5V | 1.5V @ 250μA | 2.1A Tc | 8nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7956DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7956dpt1e3-datasheets-2416.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | Tin | No | e3 | 1.4W | C BEND | 260 | SI7956 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 13 ns | 36ns | 50 ns | 18 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 150V | METAL-OXIDE SEMICONDUCTOR | 0.105Ohm | 150V | 2 N-Channel (Dual) | 105m Ω @ 4.1A, 10V | 4V @ 250μA | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SI1426DH-T1-GE3 | Vishay Siliconix | $0.06 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1426dht1e3-datasheets-7955.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | Single | 30 | 1W | 1 | FET General Purpose Power | 10 ns | 12ns | 9 ns | 15 ns | 2.8A | 20V | SILICON | SWITCHING | 1W Ta | 0.075Ohm | 30V | N-Channel | 75m Ω @ 3.6A, 10V | 2.5V @ 250μA | 2.8A Ta | 3nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ988DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/vishaysiliconix-siz988dtt1ge3-datasheets-0357.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® | 30V | 20.2W 40W | 2 N-Channel (Dual) | 1000pF @ 15V 2425pF @ 15V | 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 40A Tc 60A Tc | 10.5nC @ 4.5V, 23.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5913DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5913dct1e3-datasheets-6447.pdf | 8-SMD, Flat Lead | 8 | 15 Weeks | 84.99187mg | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | Other Transistors | Not Qualified | 18 ns | 40ns | 10 ns | 18 ns | 3.7A | 12V | SILICON | SWITCHING | 20V | 1.7W Ta 3.1W Tc | 4A | -20V | P-Channel | 330pF @ 10V | 84m Ω @ 3.7A, 10V | 1.5V @ 250μA | 4A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4200DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4200dyt1ge3-datasheets-0744.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 13 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | 8 | 2 | Dual | 30 | 2W | 2 | 10ns | 8 ns | 7.3A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.8W | 8A | 25V | 2 N-Channel (Dual) | 415pF @ 13V | 25m Ω @ 7.3A, 10V | 2.2V @ 250μA | 8A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA406DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sia406djt1ge3-datasheets-2428.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 13 Weeks | Unknown | 19.8mOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-XDSO-N3 | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | 1V | 3.5W Ta 19W Tc | 20A | N-Channel | 1380pF @ 6V | 19.8m Ω @ 10.8A, 4.5V | 1V @ 250μA | 4.5A Tc | 23nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| SIB900EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sib900edkt1ge3-datasheets-3733.pdf | PowerPAK® SC-75-6L Dual | 6 | 6 | yes | EAR99 | ESD PROTECTION | No | 3.1W | 260 | SIB900 | 6 | 40 | 2 | FET General Purpose Powers | 20 ns | 12ns | 12 ns | 70 ns | 1.5A | 6V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.225Ohm | 2 N-Channel (Dual) | 225m Ω @ 1.6A, 4.5V | 1V @ 250μA | 1.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS452DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis452dnt1ge3-datasheets-2639.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 20 ns | 12ns | 10 ns | 25 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.8W Ta 52W Tc | 45 mJ | 12V | N-Channel | 1700pF @ 6V | 3.25m Ω @ 20A, 10V | 2.2V @ 250μA | 35A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIA910EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia910edjt1ge3-datasheets-4467.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 28MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | 7.8W | 260 | SIA910E | 6 | 2 | Dual | 40 | 1.9W | 2 | FET General Purpose Powers | 10 ns | 12ns | 12 ns | 25 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 400mV | 12V | 2 N-Channel (Dual) | 455pF @ 6V | 400 mV | 28m Ω @ 5.2A, 4.5V | 1V @ 250μA | 16nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SIE844DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie844dft1e3-datasheets-3152.pdf | 10-PolarPAK® (U) | 4 | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-N4 | 25 ns | 10ns | 10 ns | 25 ns | 20.3A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 25W Tc | 44.5A | 60A | 0.007Ohm | 31 mJ | 30V | N-Channel | 2150pF @ 15V | 7m Ω @ 12.1A, 10V | 3V @ 250μA | 44.5A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI5908DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si5908dct1e3-datasheets-5599.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | C BEND | 260 | SI5908 | 8 | Dual | 40 | 1.1W | 2 | FET General Purpose Powers | 20 ns | 36ns | 36 ns | 30 ns | 5.9A | 8V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 4.4A | 0.04Ohm | 20V | 2 N-Channel (Dual) | 40m Ω @ 4.4A, 4.5V | 1V @ 250μA | 4.4A | 7.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SIR432DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir432dpt1ge3-datasheets-3206.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | YES | DUAL | C BEND | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 5W Ta 54W Tc | 8.6A | 40A | 0.0306Ohm | 14.5 mJ | N-Channel | 1170pF @ 50V | 30.6m Ω @ 8.6A, 10V | 4V @ 250μA | 28.4A Tc | 32nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7220DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7220dnt1ge3-datasheets-1978.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 60mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7220 | 8 | Dual | 40 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 10 ns | 10ns | 10 ns | 20 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.4A | 6.1 mJ | 60V | 2 N-Channel (Dual) | 60m Ω @ 4.8A, 10V | 3V @ 250μA | 3.4A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SUD50N04-05L-E3 | Vishay Siliconix | $0.34 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0405le3-datasheets-3253.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 1.437803g | 1 | Single | 136W | 1 | TO-252, (D-Pak) | 5.6nF | 15 ns | 20ns | 11 ns | 65 ns | 115A | 20V | 40V | 136W Tc | 5.4mOhm | 40V | N-Channel | 5600pF @ 25V | 5.4mOhm @ 20A, 10V | 3V @ 250μA | 115A Tc | 135nC @ 10V | 5.4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA931DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sia931djt1ge3-datasheets-9285.pdf | PowerPAK® SC-70-6 Dual | 800μm | 14 Weeks | Unknown | 6 | EAR99 | No | C-07431-DUAL | 7.8W | 2 | Dual | 1.9W | 150°C | 8 ns | 18ns | 5 ns | 20 ns | -4.3A | 20V | 30V | -30V | 2 P-Channel (Dual) | 445pF @ 15V | 65m Ω @ 3A, 10V | 2.2V @ 250μA | 4.5A | 13nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB411DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | 156.25MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib411dkt1e3-datasheets-6312.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 66mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | Single | 40 | 2.4W | 1 | Other Transistors | S-XDSO-N3 | 25 ppm | 15pF | 40ns | 75 ns | 45 ns | -9A | 8V | 20V | SILICON | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 4.8A | -20V | P-Channel | 470pF @ 10V | -1 V | 66m Ω @ 3.3A, 4.5V | 1V @ 250μA | 9A Tc | 15nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| IRFP264PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp264pbf-datasheets-1523.pdf | 250V | 38A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | No SVHC | 75mOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 5.4nF | 22 ns | 99ns | 92 ns | 110 ns | 38A | 20V | 250V | 4V | 280W Tc | 75mOhm | 250V | N-Channel | 5400pF @ 25V | 4 V | 75mOhm @ 23A, 10V | 4V @ 250μA | 38A Tc | 210nC @ 10V | 75 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SUM110N03-03P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0303pe3-datasheets-3360.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | No | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 20ns | 25 ns | 90 ns | 110A | 20V | SILICON | DRAIN | 3.75W Ta 375W Tc | 400A | 0.0026Ohm | 30V | N-Channel | 12100pF @ 25V | 2.6m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 250nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI4204DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4204dyt1ge3-datasheets-5103.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | e3 | 3.25W | GULL WING | 260 | SI4204 | 8 | 2 | Dual | 30 | 2W | 2 | 18 ns | 24ns | 13 ns | 26 ns | 19.8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 3.25W | 0.0046Ohm | 20V | 2 N-Channel (Dual) | 2110pF @ 10V | 4.6m Ω @ 10A, 10V | 2.4V @ 250μA | 45nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P10-43-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p1043e3-datasheets-3907.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 8.3W | 1 | Other Transistors | R-PSSO-G2 | 30 ns | 115ns | 60 ns | 80 ns | 9.4A | 20V | SILICON | DRAIN | 100V | 8.3W Ta 136W Tc | 50A | 80 mJ | -100V | P-Channel | 5230pF @ 50V | 43m Ω @ 9.4A, 10V | 4V @ 250μA | 38A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ946EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj946ept1ge3-datasheets-6555.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 27W | 15A | 40A | 0.033Ohm | 6 mJ | 2 N-Channel (Dual) | 600pF @ 25V | 33m Ω @ 7A, 10V | 2.5V @ 250μA | 15A Tc | 20nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4866BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4866bdyt1ge3-datasheets-4881.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | 5.3MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 150°C | 13 ns | 12ns | 9 ns | 57 ns | 16.1A | 8V | SILICON | SWITCHING | 1V | 4.45W Tc | 50A | 20 mJ | 12V | N-Channel | 5020pF @ 6V | 5.3m Ω @ 12A, 4.5V | 1V @ 250μA | 21.5A Tc | 80nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SIA441DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia441djt1ge3-datasheets-8030.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 6 | 1 | Single | 3.5W | 1 | Other Transistors | S-PDSO-N3 | 6.6A | 20V | SILICON | DRAIN | SWITCHING | 40V | 19W Tc | 30A | 0.047Ohm | 8.5 mJ | -40V | P-Channel | 890pF @ 20V | -1.2 V | 47m Ω @ 4.4A, 10V | 2.2V @ 250μA | 12A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI2335DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2335dst1ge3-datasheets-6121.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 51mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 30 | 750mW | 1 | Other Transistors | 13 ns | 15ns | 15 ns | 50 ns | -4A | 8V | SILICON | 12V | 750mW Ta | -12V | P-Channel | 1225pF @ 6V | -450 mV | 51m Ω @ 4A, 4.5V | 450mV @ 250μA (Min) | 3.2A Ta | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFL9014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfl9014trpbf-datasheets-9739.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 4 | 8 Weeks | 250.212891mg | Unknown | 500mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | Other Transistors | 150°C | 11 ns | 63ns | 31 ns | 9.6 ns | -1.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | -2V | 2W Ta 3.1W Tc | -60V | P-Channel | 270pF @ 25V | 500m Ω @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 12nC @ 10V | 10V | ±20V |
