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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Max Output Current | Number of Bits | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG9411EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg9411edlt1ge3-datasheets-5863.pdf | 6-TSSOP, SC-88, SOT-363 | 17 Weeks | 1 | SC-70-6 | 8Ohm | 2:1 | 1.8V~5.5V | SPDT | 7pF | 30ns, 24ns | 1pC | 200mOhm | -77dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5459DU-T1-GE3 | Vishay Siliconix | $18.69 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5459dut1ge3-datasheets-4353.pdf | PowerPAK® ChipFET™ Single | Lead Free | 3 | 14 Weeks | Unknown | 52mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 8 | 1 | Single | 30 | 3.5W | 1 | R-XDSO-N3 | 6 ns | 15ns | 9 ns | 26 ns | -8A | 12V | SILICON | DRAIN | SWITCHING | 20V | -1.4V | 3.5W Ta 10.9W Tc | 6.7A | 20A | -20V | P-Channel | 665pF @ 10V | 52m Ω @ 6.7A, 4.5V | 1.4V @ 250μA | 8A Tc | 26nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg403dje3-datasheets-0863.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 1μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 55Ohm | 16 | yes | No | 2 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG405 | 16 | 2 | 30 | 600mW | Multiplexer or Switches | 2 | DPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 45Ohm | 35Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ916DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-siz916dtt1ge3-datasheets-5724.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 15 Weeks | Unknown | 8 | EAR99 | No | 100W | SIZ916 | 2 | Dual | 27 ns | 83ns | 10 ns | 66 ns | 40A | 2.4V | 1.2V | 22.7W 100W | 30V | 2 N-Channel (Half Bridge) | 1208pF @ 15V | 6.4m Ω @ 19A, 10V | 2.4V @ 250μA | 16A 40A | 26nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ALDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-DIP (0.300, 7.62mm) | 26.92mm | 3.81mm | 7.11mm | 1μA | 20 | 10 Weeks | 2.508989g | 40V | 5V | 75Ohm | 20 | yes | No | 4 | e3 | MATTE TIN | 890mW | 15V | 2.54mm | DG333 | 20 | 1 | Multiplexer or Switches | 1 | 175 ns | 145 ns | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 2Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1006P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq1006p2-datasheets-6115.pdf | PDIP | 15 Weeks | 14 | No | 2W | 1.3W | 4 | 14-DIP | 60pF | 400mA | 20V | 90V | 2W | 4.5Ohm | 90V | 4 N-Channel | 60pF @ 25V | 4.5Ohm @ 1A, 10V | 2.5V @ 1mA | 400mA | Logic Level Gate | 4.5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9409DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9409dnt1e4-datasheets-6670.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | Lead Free | 1μA | 16 | 57.09594mg | Unknown | 12V | 2.7V | 7Ohm | 16 | yes | 1 | 1μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.88W | QUAD | NO LEAD | 260 | 5V | 0.65mm | DG9409 | 16 | 4 | 40 | 1.88W | 2 | Not Qualified | SPST | 162 ns | 97 ns | 6V | 5V | Multiplexer | 71 ns | Dual, Single | 3V | -5V | 8 | 7Ohm | 81 dB | 3.6Ohm | BREAK-BEFORE-MAKE | 2.7V~12V ±3V~6V | 0.1A | 4:1 | SP4T | 2nA | 23pF 112pF | 70ns, 44ns | 29pC | 3.6 Ω (Max) | -85dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5997DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5997dut1ge3-datasheets-6859.pdf | PowerPAK® ChipFET™ Dual | 6 | 84.99187mg | No SVHC | 8 | EAR99 | unknown | 10.4W | C BEND | NOT SPECIFIED | 8 | Dual | NOT SPECIFIED | 2.3W | 2 | Other Transistors | Not Qualified | R-PDSO-C6 | 10 ns | 5.1A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | -1.2V | 6A | 0.054Ohm | 2 P-Channel (Dual) | 430pF @ 15V | 54m Ω @ 3A, 10V | 2.4V @ 250μA | 6A | 14.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1412EQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg1413ent1ge4-datasheets-3369.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | Lead Free | 1μA | 16 | 172.98879mg | Unknown | 24V | 4.5V | 1.8Ohm | 16 | No | 4 | YES | GULL WING | 5V | 0.65mm | DG1412 | 1 | 4 | 210MHz | 150 ns | 120 ns | 15V | Dual, Single | 4.5V | -5V | 1.8Ohm | 80 dB | 0.08Ohm | 380ns | 510ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NO | 550pA | 11pF 24pF | 150ns, 120ns | -20pC | 80m Ω | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4058DY-T1-GE3 | Vishay Siliconix | $2.12 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4058dyt1ge3-datasheets-7329.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 5.6W Tc | N-Channel | 690pF @ 50V | 26m Ω @ 10A, 10V | 2.8V @ 250μA | 10.3A Tc | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 1μA | 8 | 6 Weeks | 540.001716mg | 36V | 13V | 35Ohm | 8 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | GULL WING | 8 | 400mW | Multiplexer or Switches | 2 | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 1 | 35Ohm | 20mOhm | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRC06DP-T1-GE3 | Vishay Siliconix | $0.71 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sirc06dpt1ge3-datasheets-8330.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 5W Ta 50W Tc | N-Channel | 2455pF @ 15V | 2.7mOhm @ 15A, 10V | 2.1V @ 250μA | 32A Ta 60A Tc | 58nC @ 10V | Schottky Diode (Body) | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG181AA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg180aa-datasheets-7546.pdf | TO-100-10 Metal Can | 9.4mm | 4.7mm | 9.4mm | 15V | 1.5mA | 30Ohm | 10 | 450mW | 2 | 450mW | 2 | TO-100-10 | 150 ns | 130 ns | 18V | 15V | Dual | 10V | 2 | 2 | 30Ohm | 30Ohm | 1:1 | SPST - NC | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3460BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-si3460bdvt1e3-datasheets-9746.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 27mOhm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | FET General Purpose Power | 2A | 5 ns | 15ns | 5 ns | 25 ns | 8A | 8V | 20V | SILICON | SWITCHING | 1V | 2W Ta 3.5W Tc | 8A | 20A | N-Channel | 860pF @ 10V | 1 V | 27m Ω @ 5.1A, 4.5V | 1V @ 250μA | 8A Tc | 24nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG186AA/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg186ap883-datasheets-7590.pdf | TO-100-10 Metal Can | 10 | 10Ohm | 10 | no | unknown | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 10 | 450mW | Multiplexer or Switches | 1 | Not Qualified | 38535Q/M;38534H;883B | 18V | 10V | 2 | 10Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 10nA | 21pF 17pF | 400ns, 200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF510SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irf510spbf-datasheets-1259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 540mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 4V | 3.7W Ta 43W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishay-dg201bak-datasheets-8307.pdf | 16-CDIP (0.300, 7.62mm) | 50μA | 16 | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 900mW | 15V | 16 | 900mW | Multiplexer or Switches | +-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBG20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfbg20pbf-datasheets-2027.pdf | 1kV | 1.4A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 11Ohm | 3 | No | 1 | Single | 54W | 1 | 150°C | TO-220AB | 500pF | 9.4 ns | 17ns | 31 ns | 58 ns | 1.4A | 20V | 1000V | 4V | 54W Tc | 11Ohm | 1kV | N-Channel | 500pF @ 25V | 4 V | 11Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 38nC @ 10V | 11 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg201bdy-datasheets-7652.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Contains Lead | 50μA | 16 | 8 Weeks | 665.986997mg | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | 100μA | e0 | Tin/Lead (Sn/Pb) | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 640mW | Multiplexer or Switches | 12/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBE30GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfibe30gpbf-datasheets-3231.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 2.1A | 20V | 800V | 4V | 35W Tc | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 3Ohm @ 1.3A, 10V | 4V @ 250μA | 2.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG303BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-SOIC (0.154, 3.90mm Width) | 8.75mm | 1.55mm | 4mm | 15V | 1mA | 14 | 8 Weeks | 338.011364mg | 36V | 13V | 50Ohm | 14 | no | unknown | 2 | 600mW | GULL WING | 240 | 15V | 14 | 1 | SPDT | 30 | 600mW | Multiplexer or Switches | 2 | Not Qualified | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | 62 dB | BREAK-BEFORE-MAKE | 2:1 | DPST - NO/NC | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfp460apbf-datasheets-4261.pdf | 500V | 20A | TO-247-3 | 15.87mm | 25.11mm | 5.31mm | Lead Free | 3 | 12 Weeks | 38.000013g | Unknown | 270mOhm | 3 | No | 260 | 3 | 1 | Single | 40 | 280W | 1 | 150°C | 18 ns | 55ns | 39 ns | 45 ns | 20A | 30V | SILICON | SWITCHING | 4V | 280W Tc | 80A | 960 mJ | 500V | N-Channel | 3100pF @ 25V | 2 V | 270m Ω @ 12A, 10V | 4V @ 250μA | 20A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 1.627801g | Unknown | 44V | 4V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 15V | 16 | 470mW | Multiplexer or Switches | +-15V | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 100Ohm | BREAK-BEFORE-MAKE | 300ns | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS98DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siss98dnt1ge3-datasheets-4984.pdf | PowerPAK® 1212-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 200V | 57W Tc | N-Channel | 608pF @ 100V | 105m Ω @ 7A, 10V | 4V @ 250μA | 14.1A Tc | 14nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG384BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg390bdje3-datasheets-5350.pdf | 16-DIP (0.300, 7.62mm) | 15V | 1mA | 8 Weeks | 36V | 13V | 50Ohm | 16 | no | unknown | 230μA | 470mW | 16 | 2 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 4 | 50Ohm | 50Ohm | 2:1 | DPST - NO | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 10pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7315DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7315dnt1ge3-datasheets-6383.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | EAR99 | Tin | e3 | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 3.8W | 1 | S-PDSO-C5 | 8 ns | 9ns | 8 ns | 23 ns | -8.9A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 3.8W Ta 52W Tc | -150V | P-Channel | 880pF @ 75V | 315m Ω @ 2.4A, 10V | 4V @ 250μA | 8.9A Tc | 30nC @ 10V | 7.5V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG387AAA/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg384aak883-datasheets-7766.pdf | TO-100-10 Metal Can | 36V | 13V | 50Ohm | 10 | No | 1 | 450mW | 2 | TO-100-10 | 22V | 7V | 2 | 2 | 50Ohm | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 10pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF610PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf610pbf-datasheets-8599.pdf | 200V | 3.3A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.5Ohm | 3 | No | 200V | 1 | Single | 36W | 1 | TO-220AB | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 4V | 36W Tc | 310 ns | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 4 V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409AK/883P | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2016 | 16-DIP (0.300, 7.62mm) | 16 Weeks | 44V | 100Ohm | 16 | No | 2 | 16-DIP | 20V | 5V | 100Ohm | 12V ±5V~20V | 4:1 | SP4T | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15Ohm (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7812DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7812dnt1ge3-datasheets-0414.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | 14 Weeks | No SVHC | 37mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Powers | 150°C | S-XDSO-C5 | 15 ns | 20ns | 10 ns | 35 ns | 7.2A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 52W Tc | 25A | 75V | N-Channel | 840pF @ 35V | 37m Ω @ 7.2A, 10V | 3V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V |
