Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRFIZ14G | Vishay Siliconix | $4.77 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfiz14gpbf-datasheets-2960.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 8A | 20V | 60V | 27W Tc | 200mOhm | N-Channel | 300pF @ 25V | 200mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRFP054 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp054pbf-datasheets-1299.pdf | 60V | 70A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 3 | 38.000013g | 3 | no | EAR99 | e0 | TIN LEAD | NOT SPECIFIED | 3 | 1 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 20 ns | 160ns | 150 ns | 83 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 60V | N-Channel | 4500pF @ 25V | 14m Ω @ 54A, 10V | 4V @ 250μA | 70A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
SIHB24N65E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishay-sihb24n65ee3-datasheets-2666.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 17 Weeks | 1.437803g | Unknown | 3 | AVALANCHE RATED | No | GULL WING | 3 | 1 | Single | 250W | 1 | R-PSSO-G2 | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | SILICON | SWITCHING | 650V | 650V | 2V | 250W Tc | 70A | 508 mJ | N-Channel | 2740pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
SIHG33N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishay-sihg33n60efge3-datasheets-3046.pdf | TO-247-3 | 3 | 14 Weeks | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 28 ns | 43ns | 48 ns | 161 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 4V | 278W Tc | TO-247AC | 0.098Ohm | 600V | N-Channel | 3454pF @ 100V | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 155nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
SIHA22N60EL-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha22n60ele3-datasheets-1892.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 600V | 35W Tc | N-Channel | 1690pF @ 100V | 197mOhm @ 11A, 10V | 5V @ 250μA | 21A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUM52N20-39P-E3 | Vishay Siliconix | $5.15 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum52n2039pe3-datasheets-2425.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 6 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 170ns | 9 ns | 34 ns | 52A | 25V | 200V | SILICON | 4.5V | 3.12W Ta 250W Tc | 133 ns | 0.094Ohm | 200V | N-Channel | 4220pF @ 25V | 4.5 V | 38m Ω @ 20A, 15V | 4.5V @ 250μA | 52A Tc | 185nC @ 15V | 10V 15V | ±25V | |||||||||||||||||||||||||||||||||
SUD50P06-15L-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sud50p0615le3-datasheets-1667.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 30 | 1 | R-PSSO-G2 | 15 ns | 70ns | 175 ns | 175 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3W Ta 136W Tc | 80A | 0.015Ohm | P-Channel | 4950pF @ 25V | 15m Ω @ 17A, 10V | 3V @ 250μA | 50A Tc | 165nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
SIHFB11N50A-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb11n50apbf-datasheets-1825.pdf | TO-220-3 | 3 | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 1 | FET General Purpose Power | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 170W Tc | TO-220AB | 44A | 0.52Ohm | 275 mJ | N-Channel | 1423pF @ 25V | 520m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
SQV120N06-4M7L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sqv120n064m7lge3-datasheets-4375.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 14.86mm | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 250W | 1 | 175°C | R-PSIP-T3 | 16 ns | 46 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 250W Tc | 300A | 0.0047Ohm | 320 mJ | 60V | N-Channel | 8800pF @ 25V | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRLL1905TR | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-261-4, TO-261AA | 1.6A | 55V | N-Channel | 1.6A Ta | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFL9110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfl9110trpbf-datasheets-9205.pdf | TO-261-4, TO-261AA | 6.7mm | 1.45mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 1.2Ohm | 3 | No | 1 | Single | 2W | 1 | SOT-223 | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 1.1A | 20V | 100V | -4V | 2W Ta 3.1W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 660mA, 10V | 4V @ 250μA | 1.1A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFPS30N60KPBF | Vishay Siliconix | $57.72 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps30n60kpbf-datasheets-8396.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | 3 | 1 | Single | SUPER-247™ (TO-274AA) | 5.87nF | 29 ns | 120ns | 50 ns | 56 ns | 30A | 30V | 600V | 450W Tc | 190mOhm | N-Channel | 5870pF @ 25V | 190mOhm @ 18A, 10V | 5V @ 250μA | 30A Tc | 220nC @ 10V | 190 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRC840PBF | Vishay Siliconix | $0.57 |
Min: 1 Mult: 1 |
download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc840pbf-datasheets-9108.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 5 | 3.000003g | 5 | EAR99 | unknown | SINGLE | 260 | 5 | 1 | 40 | 1 | Not Qualified | 14 ns | 22ns | 21 ns | 55 ns | 8A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 500V | 125W Tc | 8A | 32A | N-Channel | 1300pF @ 25V | 850m Ω @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 67nC @ 10V | Current Sensing | 10V | ±20V |
Please send RFQ , we will respond immediately.