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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFR430ATRPBF | Vishay Siliconix | $1.45 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 11 Weeks | 1.437803g | 1.7Ohm | 3 | No | 1 | Single | 110W | 1 | 150°C | D-Pak | 490pF | 8.7 ns | 27ns | 16 ns | 17 ns | 5A | 30V | 500V | 4.5V | 110W Tc | 1.7Ohm | 500V | N-Channel | 490pF @ 25V | 1.7Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.7 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRF9540STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9540spbf-datasheets-4128.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 5.08mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 200mOhm | 8 | No | 1 | Single | 3.7W | 1 | 175°C | D2PAK | 1.4nF | 16 ns | 73ns | 57 ns | 34 ns | -19A | 20V | 100V | -4V | 3.7W Ta 150W Tc | 200mOhm | -100V | P-Channel | 1400pF @ 25V | -2 V | 200mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIJ800DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sij800dpt1ge3-datasheets-1548.pdf | PowerPAK® SO-8 | 21 Weeks | Unknown | 8 | No | 35.7W | 1 | PowerPAK® SO-8 | 2.4nF | 30 ns | 15ns | 15 ns | 45 ns | 20A | 20V | 40V | 4.2W Ta 35.7W Tc | 9.5mOhm | 40V | N-Channel | 2400pF @ 20V | 9.5mOhm @ 20A, 10V | 3V @ 250μA | 20A Tc | 56nC @ 10V | 9.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQJ457EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqj457ept1ge3-datasheets-7053.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 68W | 175°C | 15 ns | 40 ns | -36A | 20V | 60V | 68W Tc | -60V | P-Channel | 3400pF @ 25V | 25m Ω @ 10A, 10V | 2.5V @ 250μA | 36A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS50DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss50dnt1ge3-datasheets-8278.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 45V | 5W Ta 65.7W Tc | N-Channel | 4000pF @ 20V | 2.83mOhm @ 15A, 10V | 2.3V @ 250μA | 29.7A Ta 108A Tc | 70nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ150DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij150dpt1ge3-datasheets-8678.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 45V | 5.2W Ta 65.7W Tc | N-Channel | 4000pF @ 20V | 2.83mOhm @ 15A, 10V | 2.3V @ 250μA | 30.9A Ta 110A Tc | 70nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS42DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss42dnt1ge3-datasheets-8966.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 100V | 4.8W Ta 57W Tc | N-Channel | 1850pF @ 50V | 14.4mOhm @ 15A, 10V | 3.4V @ 250μA | 11.8A Ta 40.5A Tc | 38nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF520STRR-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520spbf-datasheets-0907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 60W Tc | N-Channel | 360pF @ 25V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR164DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir164dpt1re3-datasheets-0464.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 69W Tc | N-Channel | 3950pF @ 15V | 2.5mOhm @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 123nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR820DP-T1-GE3 | Vishay Siliconix | $1.55 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir820dpt1ge3-datasheets-1002.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 3mOhm | EAR99 | unknown | YES | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 37.8W Tc | 40A | 70A | 20 mJ | N-Channel | 3512pF @ 15V | 3m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 95nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLIZ44GPBF | Vishay Siliconix | $1.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz44gpbf-datasheets-1320.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 28mOhm | 3 | No | 1 | Single | TO-220-3 | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 30A | 10V | 60V | 2V | 48W Tc | 28mOhm | N-Channel | 3300pF @ 25V | 28mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| SIE818DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sie818dft1e3-datasheets-2475.pdf | 10-PolarPAK® (L) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 14 Weeks | 9.5mOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 40 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 15 ns | 15ns | 10 ns | 40 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 79A | 80A | 75V | N-Channel | 3200pF @ 38V | 9.5m Ω @ 16A, 10V | 3V @ 250μA | 60A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIHF5N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihf5n50de3-datasheets-2830.pdf | TO-220-3 Full Pack | 10.63mm | 9.8mm | 4.83mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 1 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 30W Tc | TO-220AB | 500V | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIS698DN-T1-GE3 | Vishay Siliconix | $0.62 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis698dnt1ge3-datasheets-3257.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 8 | EAR99 | unknown | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 3.2W | 1 | FET General Purpose Power | R-PDSO-C5 | 2.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 19.8W Tc | 6.9A | N-Channel | 210pF @ 50V | 195m Ω @ 2.5A, 10V | 3.5V @ 250μA | 6.9A Tc | 8nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SISS28DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss28dnt1ge3-datasheets-4020.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 25V | 57W Tc | N-Channel | 3640pF @ 10V | 1.52mOhm @ 15A, 10V | 2V @ 250μA | 60A Tc | 35nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8406DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8406dbt2e1-datasheets-4645.pdf | 6-UFBGA | 1.5mm | 310μm | 1mm | Lead Free | 43 Weeks | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | 7 ns | 18ns | 10 ns | 30 ns | 16A | 8V | 400mV | 2.77W Ta 13W Tc | 20V | N-Channel | 830pF @ 10V | 33m Ω @ 1A, 4.5V | 850mV @ 250μA | 16A Tc | 20nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| SI3443BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3443bdvt1e3-datasheets-3274.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1 | Other Transistors | 22 ns | 35ns | 25 ns | 45 ns | 3.6A | 12V | SILICON | 20V | 20V | 1.1W Ta | P-Channel | 60m Ω @ 4.7A, 4.5V | 1.4V @ 250μA | 3.6A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SIA430DJT-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia430djtt4ge3-datasheets-6880.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 20V | 3.5W Ta 19.2W Tc | N-Channel | 800pF @ 10V | 13.5mOhm @ 7A, 10V | 3V @ 250μA | 12A Ta 12A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF720STRRPBF | Vishay Siliconix | $0.49 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf720spbf-datasheets-8875.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 410pF | 10 ns | 14ns | 13 ns | 30 ns | 3.3A | 20V | 400V | 3.1W Ta 50W Tc | 1.8Ohm | N-Channel | 410pF @ 25V | 1.8Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4632DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4632dyt1e3-datasheets-8699.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 21 Weeks | 8 | yes | EAR99 | e3 | MATTE TIN | DUAL | FLAT | 260 | 8 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | 69ns | 8 ns | 58 ns | 40A | 16V | SILICON | 3.5W Ta 7.8W Tc | 27A | 70A | 0.0033Ohm | 45 mJ | 25V | N-Channel | 11175pF @ 15V | 2.7m Ω @ 20A, 10V | 2.6V @ 250μA | 40A Tc | 161nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| IRFD9010 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd9010pbf-datasheets-8302.pdf | -50V | -1.1A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 3 | 6 Weeks | 639.990485mg | 4 | no | EAR99 | No | e0 | TIN LEAD | DUAL | 4 | 1 | Single | 1 | R-XDIP-T3 | 6.1 ns | 47ns | 39 ns | 13 ns | 1.1A | 20V | SILICON | SWITCHING | 50V | 1W Tc | 0.5Ohm | -50V | P-Channel | 240pF @ 25V | 500m Ω @ 580mA, 10V | 4V @ 250μA | 1.1A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SQD50P04-09L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0409lge3-datasheets-2137.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | P-Channel | 6675pF @ 20V | 9.4mOhm @ 17A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120TRRPBF | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 0.27Ohm | 100V | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||
| SIHP8N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp8n50dge3-datasheets-2874.pdf | TO-220-3 | 3 | 13 Weeks | 6.000006g | 3 | No | 1 | Single | 1 | FET General Purpose Powers | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 5V | SILICON | SWITCHING | 156W Tc | TO-220AB | 0.85Ohm | 29 mJ | 500V | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRL630STRRPBF | Vishay Siliconix | $15.87 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl630spbf-datasheets-4254.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 400mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 9A | 10V | 200V | 3.1W Ta 74W Tc | 400mOhm | N-Channel | 1100pF @ 25V | 400mOhm @ 5.4A, 5V | 2V @ 250μA | 9A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| SQM110N05-06L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqm110n0506lge3-datasheets-2346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 157W | 1 | TO-263 (D2Pak) | 4.44nF | 15 ns | 15ns | 15 ns | 35 ns | 110A | 20V | 55V | 2V | 157W Tc | 6mOhm | 55V | N-Channel | 4440pF @ 25V | 2 V | 6mOhm @ 30A, 10V | 2.5V @ 250μA | 110A Tc | 110nC @ 10V | 6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHG73N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg73n60aelge3-datasheets-3694.pdf | TO-247-3 | TO-247AC | 600V | 520W Tc | N-Channel | 6709pF @ 100V | 42mOhm @ 36.5A, 10V | 4V @ 250μA | 69A Tc | 342nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9120 | Vishay Siliconix | $0.28 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd9120pbf-datasheets-0574.pdf | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Unknown | 4 | No | 1 | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 390pF | 9.6 ns | 29ns | 29 ns | 21 ns | 1A | 20V | 100V | 1.3W Ta | 600mOhm | -100V | P-Channel | 390pF @ 25V | -4 V | 600mOhm @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF9620 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9620pbf-datasheets-1688.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | 40W | 1 | TO-220AB | 350pF | 15 ns | 25ns | 15 ns | 20 ns | 3.5A | 20V | 200V | 40W Tc | 1.5Ohm | -200V | P-Channel | 350pF @ 25V | 1.5Ohm @ 1.5A, 10V | 4V @ 250μA | 3.5A Tc | 22nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFD9113 | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 4-DIP (0.300, 7.62mm) | 639.990485mg | 4 | 1W | 1 | Single | 4-DIP, Hexdip, HVMDIP | 250pF | 600mA | 20V | 60V | 1.2Ohm | -60V | P-Channel | 250pF @ 25V | 1.6Ohm @ 300mA, 10V | 600mA Ta | 15nC @ 15V | 1.6 Ω |
