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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Max Input Voltage | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Max Output Current | Max Output Voltage | Min Input Voltage | Min Output Voltage | Output Voltage | Output Current | Output Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Voltage - Output 1 | Current - Output 1 | Threshold Voltage | Power - Max | Power Dissipation-Max | Topology | Number of Inputs | Voltage - Output 2 | Current - Output 2 | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | On-state Resistance Match-Nom | Switching | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Frequency - Switching | Signal Current-Max | Nominal Vgs | w/Sequencer | Voltage/Current - Output 1 | Voltage/Current - Output 2 | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4390DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4390dyt1ge3-datasheets-6295.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 12 Weeks | 186.993455mg | 9.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.4W | 1 | 16 ns | 6ns | 6 ns | 43 ns | 8.5A | 20V | SILICON | SWITCHING | 1.4W Ta | 30V | N-Channel | 9.5m Ω @ 12.5A, 10V | 2.8V @ 250μA | 8.5A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC401ACD-T1-GE3 | Vishay Siliconix | $1.80 |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | Surface Mount | -40°C~85°C | Digi-Reel® | 1 (Unlimited) | 130μA | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic401bcdt1ge3-datasheets-8994.pdf | 32-PowerVFQFN | 5mm | 850μm | 5mm | 17V | Lead Free | 19 Weeks | No SVHC | 32 | EAR99 | 17V | 3V~17V | SIC401 | SWITCHING REGULATOR | 15A | 5.5V | 3V | 600mV | 5.5V | 15A | Adjustable | 2 | 5.5V | 15A | Step-Down (Buck) Synchronous (1), Linear (LDO) (1) | 750mV | 200mA | 200kHz~1MHz | No | 0.6V~5.5V 15A | Adj to 0.75V 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4833ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4833adyt1e3-datasheets-8435.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1 | 7 ns | 11ns | 8 ns | 19 ns | -4.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 1.93W Ta 2.75W Tc | 20A | 0.072Ohm | -30V | P-Channel | 750pF @ 15V | 72m Ω @ 3.6A, 10V | 2.5V @ 250μA | 4.6A Tc | 15nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG536DN-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg535dje3-datasheets-2519.pdf | 44-LCC (J-Lead) | 16.66mm | 3.69mm | 16.66mm | 15V | 500MHz | Lead Free | 50μA | 44 | 2.386605g | 16.5V | 10V | 90Ohm | 44 | yes | unknown | 1 | e3 | T-Switch Configuration | Matte Tin (Sn) | Video | 450mW | QUAD | J BEND | 260 | 15V | DG536 | 44 | 1 | 40 | 450mW | Not Qualified | 300 ns | 150 ns | Multiplexer | 300 ns | Single | 16 | 90Ohm | 90Ohm | 9Ohm | BREAK-BEFORE-MAKE | 0.02A | 16:1 | 10V~16.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5445BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5445bdct1e3-datasheets-8498.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 33MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | Other Transistors | 12 ns | 22ns | 50 ns | 75 ns | -71A | 8V | SILICON | 1.3W Ta | 5.2A | -8V | P-Channel | 33m Ω @ 5.2A, 4.5V | 1V @ 250μA | 5.2A Ta | 21nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG534ADJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 600μA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg534adne3-datasheets-2500.pdf | 20-DIP (0.300, 7.62mm) | 26.92mm | 3.81mm | 7.11mm | 500MHz | 2mA | 2.259996g | 18V | 10V | 90Ohm | 20 | no | No | T-Switch Configuration | Ultrasound, Video | 625mW | 20 | 2 | 625mW | 300 ns | 175 ns | 15V | 12V | Multiplexer | 300 ns | Dual, Single | 10V | 4 | 90Ohm | 2:1 | 10V~21V | SPDT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4858DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4858dyt1ge3-datasheets-6391.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 3.5W | 1 | FET General Purpose Power | 21 ns | 10ns | 10 ns | 83 ns | 20A | 20V | SILICON | SWITCHING | 30V | 30V | 1.6W Ta | 13A | 0.00525Ohm | N-Channel | 5.25m Ω @ 20A, 10V | 1V @ 250μA (Min) | 13A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ992EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqj992ept1ge3-datasheets-1026.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 47mOhm | 8 | EAR99 | 34W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 34W | 2 | R-PSSO-G4 | 15A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 60A | 2 N-Channel (Dual) | 446pF @ 30V | 56.2m Ω @ 3.7A, 10V | 2.5V @ 250μA | 12nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5404BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5404bdct1e3-datasheets-1082.pdf | 8-SMD, Flat Lead | 8 | 24 Weeks | 84.99187mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Powers | 12 ns | 12ns | 10 ns | 25 ns | 7.5A | 12V | SILICON | 20V | 20V | 1.5V | 1.3W Ta | 5.4A | 20A | N-Channel | 28m Ω @ 5.4A, 4.5V | 1.5V @ 250μA | 5.4A Ta | 11nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7216DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7216dnt1ge3-datasheets-1729.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 39mOhm | 8 | yes | EAR99 | Tin | No | e3 | 2.5W | C BEND | 260 | SI7216 | 8 | 2 | Dual | 30 | 2.5W | 2 | FET General Purpose Power | S-XDSO-C6 | 9 ns | 57ns | 5 ns | 19 ns | 5A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 3V | 20.8W | 5 mJ | 2 N-Channel (Dual) | 670pF @ 20V | 32m Ω @ 5A, 10V | 3V @ 250μA | 6A | 19nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6473DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6473dqt1e3-datasheets-6434.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 1 | Single | 8-TSSOP | 42 ns | 33ns | 95 ns | 220 ns | 6.2A | 8V | 20V | 1.08W Ta | 12.5mOhm | -20V | P-Channel | 12.5mOhm @ 9.5A, 4.5V | 450mV @ 250μA (Min) | 6.2A Ta | 70nC @ 5V | 12.5 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ906E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjq906et1ge3-datasheets-2145.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | 2 | 50W | 175°C | PowerPAK® 8 x 8 Dual | 14 ns | 26 ns | 95A | 20V | 40V | 50W | 2.7mOhm | 40V | 2 N-Channel (Dual) | 3600pF @ 20V | 3.3mOhm @ 5A, 10V | 3.5V @ 250μA | 95A Tc | 42nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5401DC-T1-GE3 | Vishay Siliconix | $0.13 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5401dct1e3-datasheets-8433.pdf | 8-SMD, Flat Lead | 32mOhm | Single | 1.3W | 1206-8 ChipFET™ | 115 ns | 5.2A | 8V | 20V | 1.3W Ta | 32mOhm | 20V | P-Channel | 32mOhm @ 5.2A, 4.5V | 1V @ 250μA | 5.2A Ta | 25nC @ 4.5V | 32 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1025X-T1-GE3 | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1025xt1ge3-datasheets-4065.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | Unknown | 4Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1025 | 3 | Dual | 40 | 250mW | 2 | Other Transistors | -500mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | -2V | 0.19A | -60V | 2 P-Channel (Dual) | 23pF @ 25V | 4 Ω @ 500mA, 10V | 3V @ 250μA | 190mA | 1.7nC @ 15V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7425DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7425dnt1ge3-datasheets-6629.pdf | PowerPAK® 1212-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 30 ns | 55ns | 100 ns | 130 ns | 8.3A | 8V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 25A | 0.016Ohm | 12V | P-Channel | 16m Ω @ 12.6A, 4.5V | 1V @ 300μA | 8.3A Ta | 39nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6926ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si6926adqt1e3-datasheets-4790.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 30MOhm | 8 | yes | EAR99 | Tin | No | e3 | 830mW | GULL WING | 260 | SI6926 | 8 | Dual | 40 | 830mW | 2 | FET General Purpose Powers | 6 ns | 16ns | 16 ns | 46 ns | 4.5A | 8V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 4.1A | 2 N-Channel (Dual) | 30m Ω @ 4.5A, 4.5V | 1V @ 250μA | 4.1A | 10.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7440DP-T1-GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7440dpt1ge3-datasheets-6684.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | FET General Purpose Powers | Not Qualified | R-XDSO-C5 | 18 ns | 41 ns | 75 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 0.0065Ohm | 30V | N-Channel | 6.5m Ω @ 21A, 10V | 3V @ 250μA | 12A Ta | 35nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4228DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4228dyt1ge3-datasheets-6948.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 18MOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4228 | 8 | 2 | Dual | 30 | 2W | 2 | 7 ns | 12ns | 10 ns | 21 ns | 8A | 12V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 8A | 25V | 2 N-Channel (Dual) | 790pF @ 12.5V | 600 mV | 18m Ω @ 7A, 10V | 1.4V @ 250μA | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4453DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4453dyt1ge3-datasheets-6438.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1 | Single | 1.5W | 1 | 8-SO | 110 ns | 235ns | 235 ns | 410 ns | 10A | 8V | 12V | 1.5W Ta | 6.5mOhm | -12V | P-Channel | 6.5mOhm @ 14A, 4.5V | 900mV @ 600μA | 10A Ta | 165nC @ 5V | 6.5 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ980AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj980aept1ge3-datasheets-8013.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 41mOhm | 8 | EAR99 | YES | 34W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | 17A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 2V | 34W Tc | 10 mJ | 2 N-Channel (Dual) | 790pF @ 35V | 50m Ω @ 3.8A, 10V | 2.5V @ 250μA | 17A Tc | 21nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1470DH-T1-GE3 | Vishay Siliconix | $0.64 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1470dht1e3-datasheets-7986.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | Unknown | 66MOhm | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | 9 ns | 51ns | 7.1 ns | 18 ns | 3.8A | 12V | SILICON | SWITCHING | 1.5W Ta 2.8W Tc | 5 mJ | 30V | N-Channel | 510pF @ 15V | 600 mV | 66m Ω @ 3.8A, 4.5V | 1.6V @ 250μA | 5.1A Tc | 7.5nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4943CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4943cdyt1e3-datasheets-1867.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 19.2MOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 30 | 2W | 2 | 50 ns | 71ns | 15 ns | 29 ns | 8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1V | 3.1W | 8A | -20V | 2 P-Channel (Dual) | 1945pF @ 10V | 19.2m Ω @ 8.3A, 10V | 3V @ 250μA | 62nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4403BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4403bdyt1e3-datasheets-8348.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | EAR99 | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.35W | 1 | Not Qualified | 45ns | 70 ns | 150 ns | 7.3A | 8V | SILICON | -450mV | 1.35W Ta | 20V | P-Channel | 17m Ω @ 9.9A, 4.5V | 1V @ 350μA | 7.3A Ta | 50nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4949EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2017 | /files/vishaysiliconix-sq4949eyt1ge3-datasheets-0472.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 3.3W | 1 | 8-SOIC | 7 ns | 9ns | 8 ns | 28 ns | 7.5A | 20V | 30V | 3.3W | 2 P-Channel (Dual) | 1020pF @ 25V | 35mOhm @ 5.9A, 10V | 2.5V @ 250μA | 7.5A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8445DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8445dbt2e1-datasheets-2406.pdf | 4-XFBGA, CSPBGA | 4 | 4 | yes | EAR99 | No | e3 | MATTE TIN | BOTTOM | BALL | 260 | 4 | Single | 40 | 1.8W | 1 | Other Transistors | 11 ns | 25ns | 10 ns | 37 ns | -9.8A | 5V | SILICON | SWITCHING | 20V | 1.8W Ta 11.4W Tc | 3.9A | -20V | P-Channel | 700pF @ 10V | 84m Ω @ 1A, 4.5V | 850mV @ 250μA | 9.8A Tc | 16nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1029X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1029xt1ge3-datasheets-1515.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | No SVHC | 4Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1029 | 6 | Dual | 40 | 250mW | 2 | Other Transistors | 150°C | 305mA | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.305A | 60V | N and P-Channel | 30pF @ 25V | 1.4 Ω @ 500mA, 10V | 2.5V @ 250μA | 305mA 190mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8473EDB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8473edbt1e1-datasheets-2419.pdf | 4-XFBGA, CSPBGA | 4 | Unknown | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | Single | 30 | 1 | Other Transistors | -7.1A | 12V | SILICON | SWITCHING | 20V | -1.5V | 1.1W Ta 2.7W Tc | 0.055Ohm | -20V | P-Channel | 41m Ω @ 1A, 4.5V | 1.5V @ 250μA | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB68EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjb68ept1ge3-datasheets-4051.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | 2 | 27W | 175°C | PowerPAK® SO-8 Dual | 9 ns | 15 ns | 11A | 20V | 100V | 27W | 76.5mOhm | 100V | 2 N-Channel (Dual) | 280pF @ 25V | 92mOhm @ 4A, 10V | 2.5V @ 250μA | 11A Tc | 8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR878DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir878dpt1ge3-datasheets-2635.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | Tin | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5W Ta 44.5W Tc | 20 mJ | 100V | N-Channel | 1250pF @ 50V | 14m Ω @ 15A, 10V | 2.8V @ 250μA | 40A Tc | 43nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3552DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si3552dvt1e3-datasheets-4526.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 19.986414mg | Unknown | 200mOhm | 6 | No | 1.15W | SI3552 | 2 | Single | 1.15W | 2 | 6-TSOP | 8 ns | 12ns | 7 ns | 12 ns | 51A | 20V | 30V | 1V | 1.15W | 85mOhm | 30V | N and P-Channel | 1 V | 105mOhm @ 2.5A, 10V | 1V @ 250μA (Min) | 2.5A | 3.2nC @ 5V | Logic Level Gate | 105 mΩ |
