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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIA913ADJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia913adjt1ge3-datasheets-3734.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | 6 | 14 Weeks | 28.009329mg | yes | EAR99 | Tin | No | 6.5W | 260 | SIA913 | 3 | 2 | Dual | 40 | 2 | Other Transistors | S-XDSO-N6 | 20 ns | 25ns | 25 ns | 30 ns | 4.3A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 4.5A | 0.061Ohm | -12V | 2 P-Channel (Dual) | 590pF @ 6V | 61m Ω @ 3.6A, 4.5V | 1V @ 250μA | 4.5A | 20nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SIS456DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis456dnt1ge3-datasheets-4722.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 20 ns | 25ns | 12 ns | 25 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 52W Tc | 30V | N-Channel | 1800pF @ 15V | 5.1m Ω @ 20A, 10V | 2.2V @ 250μA | 35A Tc | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIA517DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sia517djt1ge3-datasheets-4425.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 800μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | 6.5W | NO LEAD | 260 | SIA517 | 6 | 2 | 40 | 1.9W | 2 | Other Transistors | Not Qualified | 150°C | 30 ns | 25ns | 25 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | 12V | N and P-Channel | 500pF @ 6V | 400 mV | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 15nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI7866ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7866adpt1e3-datasheets-6244.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 2.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 105ns | 9 ns | 49 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 800mV | 5.4W Ta 83W Tc | 35A | 70A | 20V | N-Channel | 5415pF @ 10V | 2.4m Ω @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 125nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI4564DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si4564dyt1ge3-datasheets-5645.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.2W | DUAL | GULL WING | 260 | SI4564 | 8 | 2 | 40 | 2W | 2 | Other Transistors | 150°C | 42 ns | 40ns | 15 ns | 40 ns | 10A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 800mV | 3.1W 3.2W | 8A | N and P-Channel | 855pF @ 20V | 800 mV | 17.5m Ω @ 8A, 10V | 2V @ 250μA | 10A 9.2A | 31nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| SIE862DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sie862dft1ge3-datasheets-3210.pdf | 10-PolarPAK® (U) | 4 | 10 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 10 | 30 | 1 | FET General Purpose Power | R-PDSO-N4 | 30 ns | 20ns | 15 ns | 40 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | 5.2W Ta 104W Tc | 30A | 0.0038Ohm | 80 mJ | N-Channel | 3100pF @ 15V | 3.2m Ω @ 20A, 10V | 2.2V @ 250μA | 50A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI5948DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si5948dut1ge3-datasheets-6607.pdf | PowerPAK® ChipFET™ Dual | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 40V | 7W | 2 N-Channel (Dual) | 165pF @ 20V | 82m Ω @ 5A, 10V | 2.5V @ 250μA | 6A Tc | 2.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-09P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0309pge3-datasheets-3255.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 9.5mOhm | 1 | Single | 63A | 20V | 30V | 7.5W Ta 65.2W Tc | N-Channel | 2200pF @ 25V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 63A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3993CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si3993cdvt1ge3-datasheets-9330.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | EAR99 | Tin | unknown | e3 | 1.4W | GULL WING | NOT SPECIFIED | 6 | 2 | Dual | NOT SPECIFIED | 1.14W | 2 | Other Transistors | Not Qualified | 10 ns | 16ns | 12 ns | 17 ns | -2.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.2V | MO-193AA | 0.111Ohm | -30V | 2 P-Channel (Dual) | 210pF @ 15V | -1.2 V | 111m Ω @ 2.5A, 10V | 2.2V @ 250μA | 2.9A | 8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| SUM90N08-7M6P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90n087m6pe3-datasheets-3297.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 40 | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 32 ns | 90A | 20V | SILICON | 3.75W Ta 150W Tc | 200A | 75V | N-Channel | 3528pF @ 30V | 7.6m Ω @ 30A, 10V | 4.8V @ 250μA | 90A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHB33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb33n60ege3-datasheets-1747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 3 | yes | No | GULL WING | 1 | Single | 1 | FET General Purpose Powers | R-PSSO-G2 | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 278W Tc | 88A | 0.099Ohm | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SUP85N10-10P-GE3 | Vishay Siliconix | $3.52 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sup85n1010pge3-datasheets-3363.pdf | TO-220-3 | 3 | 3 | EAR99 | No | SINGLE | 3 | 3.75W | 1 | FET General Purpose Power | 15 ns | 12ns | 8 ns | 25 ns | 85A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 3.75W Ta 227W Tc | TO-220AB | 240A | N-Channel | 4660pF @ 50V | 3 V | 10m Ω @ 20A, 10V | 4.5V @ 250μA | 85A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SISF20DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf20dnt1ge3-datasheets-5035.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 60V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) | 1290pF @ 30V | 13mOhm @ 7A, 10V | 3V @ 250μA | 14A Ta 52A Tc | 33nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM90P10-19-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90p1019e3-datasheets-3910.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 13.6W | 1 | Other Transistors | R-PSSO-G2 | 30 ns | 720ns | 610 ns | 125 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 100V | 13.6W Ta 375W Tc | 90A | 90A | -100V | P-Channel | 12000pF @ 50V | 19m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI4214DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4214ddyt1ge3-datasheets-6200.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 19.5mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | 150°C | 7 ns | 45ns | 12 ns | 15 ns | 8.5A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 7.5A | 30V | 2 N-Channel (Dual) | 660pF @ 15V | 19.5m Ω @ 8A, 10V | 2.5V @ 250μA | 22nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SIA448DJ-T1-GE3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia448djt1ge3-datasheets-1655.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 13 Weeks | Unknown | 6 | EAR99 | No | 2 | Dual | 3.5W | 1 | S-PDSO-N3 | 8 ns | 30 ns | 12A | 8V | SILICON | DRAIN | SWITCHING | 400mV | 3.5W Ta 19.2W Tc | 30A | 20V | N-Channel | 1380pF @ 1V | 15m Ω @ 12.4A, 4.5V | 1V @ 250μA | 12A Tc | 35nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| SI2323DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2323dst1e3-datasheets-7974.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 15 Weeks | 1.437803g | Unknown | 39mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 25 ns | 43ns | 43 ns | 71 ns | -4.7A | 8V | SILICON | SWITCHING | 20V | -1V | 750mW Ta | -20V | P-Channel | 1020pF @ 10V | -1 V | 39m Ω @ 4.7A, 4.5V | 1V @ 250μA | 3.7A Ta | 19nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI2305ADS-T1-E3 | Vishay Siliconix | $1.28 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2305adst1ge3-datasheets-0154.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 40mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3 | Single | 30 | 1 | Other Transistors | 11ns | 11 ns | 22 ns | 4.1A | 8V | SILICON | SWITCHING | 960mW Ta 1.7W Tc | 5.4A | -8V | P-Channel | 740pF @ 4V | 40m Ω @ 4.1A, 4.5V | 800mV @ 250μA | 5.4A Tc | 15nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| SI9433BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si9433bdyt1e3-datasheets-9829.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 40 ns | 55ns | 55 ns | 65 ns | -6.2A | 12V | SILICON | 20V | -600mV | 1.3W Ta | 4.5A | -20V | P-Channel | 40m Ω @ 6.2A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 14nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| SIA453EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia453edjt1ge3-datasheets-8760.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 15 Weeks | 23.5mOhm | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | DUAL | NO LEAD | 1 | Single | 1 | S-PDSO-N3 | 25 ns | 45ns | 28 ns | 65 ns | 24A | 12V | SILICON | DRAIN | SWITCHING | 30V | 3.5W Ta 19W Tc | 80A | 5 mJ | -30V | P-Channel | 1900pF @ 15V | 18.5m Ω @ 5A, 10V | 1.4V @ 250μA | 24A Tc | 66nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SI7478DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7478dpt1e3-datasheets-0846.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 20ns | 20 ns | 115 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3V | 1.9W Ta | 60A | 60V | N-Channel | 7.5m Ω @ 20A, 10V | 3V @ 250μA | 15A Ta | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| 2N6660JTXV02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | EAR99 | No | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7489DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7489dpt1ge3-datasheets-1663.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 5.2W | 1 | 150°C | R-PDSO-F5 | 15 ns | 160ns | 100 ns | 110 ns | -28A | 20V | SILICON | DRAIN | SWITCHING | 100V | -3V | 5.2W Ta 83W Tc | 40A | -100V | P-Channel | 4600pF @ 50V | 55ns | -3 V | 41m Ω @ 7.8A, 10V | 3V @ 250μA | 28A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| VQ1004P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 15 Weeks | 14 | No | 2W | 4 | 460mA | 20V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7119DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7119dnt1ge3-datasheets-4330.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | -3.8A | 20V | SILICON | DRAIN | SWITCHING | 200V | -4V | 3.7W Ta 52W Tc | 5A | -200V | P-Channel | 666pF @ 50V | -4 V | 1.05 Ω @ 1A, 10V | 4V @ 250μA | 3.8A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIS330DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis330dnt1ge3-datasheets-9599.pdf | PowerPAK® 1212-8 | 3.15mm | 1.12mm | 3.15mm | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PDSO-C5 | 16 ns | 19 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.7W Ta 52W Tc | 70A | 0.0056Ohm | 20 mJ | 30V | N-Channel | 1300pF @ 15V | 5.6m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| 2N7002K-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-2n7002kt1ge3-datasheets-5738.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 19 Weeks | 1.437803g | Unknown | 2Ohm | 3 | yes | EAR99 | LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING | Tin | No | 3A | e3 | 60V | DUAL | GULL WING | 3 | 1 | Single | 350mW | 1 | 150°C | 25 ns | 35 ns | 190mA | 20V | SILICON | SWITCHING | 2V | 350mW Ta | 60V | N-Channel | 30pF @ 25V | 2 V | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | 300mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIA439EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia439edjt1ge3-datasheets-1696.pdf | PowerPAK® SC-70-6 | 3 | 25 Weeks | yes | EAR99 | No | DUAL | Single | 19W | 1 | S-PDSO-N3 | 20ns | 25 ns | 95 ns | 28A | 8V | SILICON | DRAIN | SWITCHING | 20V | 3.5W Ta 19W Tc | 60A | 0.018Ohm | 5.8 mJ | -20V | P-Channel | 2410pF @ 10V | 16.5m Ω @ 5A, 4.5V | 1V @ 250μA | 28A Tc | 69nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4848DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4848dyt1e3-datasheets-7754.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 85mOhm | 8 | yes | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | Not Qualified | 150°C | 9 ns | 10ns | 10 ns | 24 ns | 3.7A | 20V | SILICON | 2V | 1.5W Ta | 2.7A | 150V | N-Channel | 2 V | 85m Ω @ 3.5A, 10V | 2V @ 250μA (Min) | 2.7A Ta | 21nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| SUM110N03-04P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0304pe3-datasheets-9890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 12ns | 10 ns | 40 ns | 110A | 20V | SILICON | SWITCHING | 1V | 3.75W Ta 120W Tc | 0.0042Ohm | 30V | N-Channel | 5100pF @ 25V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 110A Tc | 60nC @ 4.5V | 4.5V 10V | ±20V |
