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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | Number of Functions | Power Rating | JESD-609 Code | Feature | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching | Feedback Cap-Max (Crss) | Switch-on Time-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHG20N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg20n50ce3-datasheets-1322.pdf | TO-247-3 | 3 | 38.000013g | Unknown | 3 | yes | No | SINGLE | 260 | 3 | 1 | 40 | 292W | 1 | FET General Purpose Power | 80 ns | 27ns | 44 ns | 32 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 5V | 250W Tc | TO-247AC | 80A | 0.27Ohm | 500V | N-Channel | 2942pF @ 25V | 5 V | 270m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 76nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP60N02-4M5P-E3 | Vishay Siliconix | $4.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60n024m5pe3-datasheets-3356.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | TO-220AB | 5.95nF | 15 ns | 7ns | 8 ns | 35 ns | 60A | 20V | 20V | 3.75W Ta 120W Tc | 4.5mOhm | 20V | N-Channel | 5950pF @ 10V | 4.5mOhm @ 20A, 10V | 3V @ 250μA | 60A Tc | 50nC @ 4.5V | 4.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF920DT-T1-GE3 | Vishay Siliconix | $1.25 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf920dtt1ge3-datasheets-5085.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.9W Ta 28W Tc 4.5W Ta 74W Tc | 2 N-Channel (Dual), Schottky | 1300pF @ 15V 5230pF @ 15V | 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 28A Ta 76A Tc 49A Ta 197A Tc | 29nC @ 10V, 125nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7860DP-T1-GE3 | Vishay Siliconix | $0.86 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7860dpt1ge3-datasheets-3692.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Powers | R-XDSO-C5 | 18 ns | 12ns | 19 ns | 46 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 50A | 45 mJ | 30V | N-Channel | 8m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5513CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5513cdct1ge3-datasheets-6399.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5513 | 8 | 30 | 1.7W | 2 | 19 ns | 40ns | 40 ns | 15 ns | 3.7A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.055Ohm | N and P-Channel | 285pF @ 10V | 55m Ω @ 4.3A, 4.5V | 1.5V @ 250μA | 4A 3.7A | 4.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1315DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1315dlt1ge3-datasheets-8442.pdf | SC-70, SOT-323 | Lead Free | 3 | 15 Weeks | 124.596154mg | No SVHC | 336mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | Single | 300mW | 1 | Other Transistors | 10 ns | 15ns | 8 ns | 14 ns | -900mA | 8V | SILICON | SWITCHING | -400mV | 300mW Ta 400mW Tc | 0.9A | -8V | P-Channel | 112pF @ 4V | 336m Ω @ 800mA, 4.5V | 800mV @ 250μA | 900mA Tc | 3.4nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5457DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5457dct1ge3-datasheets-7495.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | 36mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 2.3W | 1 | 25 ns | 20ns | 12 ns | 30 ns | 6A | 12V | SILICON | SWITCHING | 20V | 5.7W Tc | 6A | -20V | P-Channel | 1000pF @ 10V | 36m Ω @ 4.9A, 4.5V | 1.4V @ 250μA | 6A Tc | 38nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4404DY-T1-E3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4404dyt1ge3-datasheets-6289.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 6.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | 2nF | 20 ns | 15ns | 40 ns | 105 ns | 23A | 20V | SILICON | 1.6W Ta | 30V | N-Channel | 1 V | 6.5m Ω @ 23A, 10V | 3V @ 250μA | 15A Ta | 55nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2323CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2323cdst1ge3-datasheets-9133.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 39mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 150°C | 15 ns | 23ns | 12 ns | 40 ns | -4.6A | 8V | SILICON | SWITCHING | 20V | -400mV | 1.25W Ta 2.5W Tc | 6A | -20V | P-Channel | 1090pF @ 10V | -400 mV | 39m Ω @ 4.6A, 4.5V | 1V @ 250μA | 6A Tc | 25nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N06-07L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0607lge3-datasheets-4822.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 30 | 136W | 1 | FET General Purpose Powers | 15 ns | 13ns | 14 ns | 62 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 136W Tc | 50A | 60V | N-Channel | 5800pF @ 25V | 7.4m Ω @ 20A, 10V | 3V @ 250μA | 96A Tc | 144nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P06-15-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50p0615ge3-datasheets-0843.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 2 | 14 Weeks | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 1 | 30 | 2.5W | 1 | Other Transistors | Not Qualified | 150°C | R-PSSO-G2 | 15 ns | 175 ns | -50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 2.5W Ta 113W Tc | 80A | -60V | P-Channel | 4950pF @ 25V | 15m Ω @ 17A, 10V | 3V @ 250μA | 50A Tc | 165nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JAN02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 860mA | 20V | 90V | 725mW Ta 6.25W Tc | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7489DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7489dpt1ge3-datasheets-1663.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 41mOhm | 8 | yes | EAR99 | S17-0173-Single | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 5.2W | 1 | Not Qualified | 150°C | R-PDSO-F5 | 15 ns | 160ns | 100 ns | 110 ns | -28A | 20V | SILICON | DRAIN | SWITCHING | 100V | -3V | 5.2W Ta 83W Tc | 40A | -100V | P-Channel | 4600pF @ 50V | 55ns | 41m Ω @ 7.8A, 10V | 3V @ 250μA | 28A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD113 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd113pbf-datasheets-5477.pdf | 4-DIP (0.300, 7.62mm) | 2 | 4 | EAR99 | unknown | DUAL | NOT SPECIFIED | 2 | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDIP-T2 | 800mA | SILICON | DRAIN | SWITCHING | 60V | 60V | 1W Tc | 0.8A | 0.8Ohm | 25 pF | N-Channel | 200pF @ 25V | 800m Ω @ 800mA, 10V | 4V @ 250μA | 800mA Tc | 7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD09P10-195-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sud09p10195ge3-datasheets-4235.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | Lead Free | 2 | 14 Weeks | No SVHC | 195mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | 2.5W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 7 ns | 12ns | 9 ns | 33 ns | -8.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | -1V | 2.5W Ta 32.1W Tc | -100V | P-Channel | 1055pF @ 50V | 195m Ω @ 3.6A, 10V | 2.5V @ 250μA | 8.8A Tc | 34.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP0808B-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | EAR99 | No | 8541.29.00.75 | BOTTOM | WIRE | 1 | 11 ns | 30ns | 20 ns | 20 ns | 880mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 6.25W Ta | 0.88A | 3A | 5Ohm | 25 pF | P-Channel | 150pF @ 25V | 60ns | 55ns | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7850DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7850dpt1ge3-datasheets-4691.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 22mOhm | 8 | yes | EAR99 | Tin | No | S17-0173_SINGLE | e3 | DUAL | FLAT | 8 | 1 | Single | 1.8W | 1 | 150°C | R-PDSO-F5 | 10 ns | 10ns | 10 ns | 25 ns | 6.2A | 20V | SILICON | DRAIN | SWITCHING | 3V | 1.8W Ta | 40A | 60V | N-Channel | 74ns | 40ns | 22m Ω @ 10.3A, 10V | 3V @ 250μA | 6.2A Ta | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA467EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia467edjt1ge3-datasheets-1496.pdf | PowerPAK® SC-70-6 | 3 | 15 Weeks | yes | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 19W | 1 | S-PDSO-N3 | 25ns | 50 ns | 90 ns | 31A | 8V | SILICON | DRAIN | SWITCHING | 12V | 3.5W Ta 19W Tc | 60A | 0.0145Ohm | 5.8 mJ | -12V | P-Channel | 2520pF @ 6V | 13m Ω @ 5A, 4.5V | 1V @ 250μA | 31A Tc | 72nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7415DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7415dnt1e3-datasheets-7720.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | 14 Weeks | No SVHC | 65mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | SI7415DN-T1-GE3 | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 12 ns | 12ns | 12 ns | 22 ns | -5.7A | 20V | -60V | SILICON | DRAIN | SWITCHING | 60V | 1V | 1.5W Ta | 3.6A | 30A | -60V | P-Channel | -3 V | 65m Ω @ 5.7A, 10V | 3V @ 250μA | 3.6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD45P03-10-E3 | Vishay Siliconix | $1.12 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud45p0310e3-datasheets-9915.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 10mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 20 | 4W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 15 ns | 375ns | 140 ns | 100 ns | -15A | 20V | -30V | SILICON | DRAIN | 30V | -3V | 4W Ta 70W Tc | P-Channel | 6000pF @ 25V | -1 V | 10m Ω @ 15A, 10V | 3V @ 250μA | 150nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4401BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4401bdyt1e3-datasheets-8750.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 14mOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | 150°C | 16 ns | 15ns | 15 ns | 97 ns | -8.7A | 20V | SILICON | SWITCHING | 40V | -3V | 1.5W Ta | -40V | P-Channel | 14m Ω @ 10.5A, 10V | 3V @ 250μA | 8.7A Ta | 55nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N04-2M1P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sum110n042m1pe3-datasheets-2490.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 1.437803g | No SVHC | 2.1mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 312W | 1 | FET General Purpose Power | R-PSSO-G2 | 102 ns | 62ns | 60 ns | 180 ns | 11A | 20V | SILICON | SWITCHING | 1.2V | 3.13W Ta 312W Tc | 250A | 40V | N-Channel | 18800pF @ 20V | 2.1m Ω @ 30A, 10V | 2.5V @ 250μA | 29A Ta 110A Tc | 360nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4425DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4425ddyt1ge3-datasheets-0794.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 9.8MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 5.7W | 1 | Other Transistors | 150°C | 12 ns | 9ns | 9 ns | 42 ns | -13A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1.2V | 2.5W Ta 5.7W Tc | -30V | P-Channel | 2610pF @ 15V | -1.2 V | 9.8m Ω @ 13A, 10V | 2.5V @ 250μA | 19.7A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP45P03-09-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup45p0309ge3-datasheets-3613.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 73.5W Tc | TO-220AB | 45A | 100A | 0.0087Ohm | 61 mJ | P-Channel | 2700pF @ 15V | 8.7m Ω @ 20A, 10V | 2.5V @ 250μA | 45A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4386DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4386dyt1e3-datasheets-3241.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 7mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.47W | 1 | FET General Purpose Power | 12 ns | 9ns | 9 ns | 35 ns | 16A | 20V | SILICON | SWITCHING | 1.47W Ta | 30V | N-Channel | 2 V | 7m Ω @ 16A, 10V | 2.5V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32402ADNP-T1GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Digi-Reel® | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sip32401adnpt1ge4-datasheets-2790.pdf | 4-UFDFN Exposed Pad | 1.25mm | 600μm | 1.65mm | 4 | 16 Weeks | 50.008559mg | Unknown | 72mOhm | 4 | On/Off | No | 5.5V | 2.4A | 1 | 324mW | Load Discharge, Slew Rate Controlled | 5.5V | 324mW | DUAL | 0.5mm | SIP3240*A | 1 | AUDIO/VIDEO SWITCH | 324mW | 2.4A | 2.4A | N-Channel | 1.1V~5.5V | 3.8 ms | 1 μs | 1 | General Purpose | High Side | Reverse Current | BREAK-BEFORE-MAKE | 3800000ns | Not Required | 62m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1012R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1012rt1ge3-datasheets-5803.pdf | SC-75A | 1.58mm | 800μm | 760μm | Lead Free | 3 | 14 Weeks | No SVHC | 700MOhm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 150mW | 1 | FET General Purpose Power | 150°C | 5 ns | 5ns | 5 ns | 25 ns | 600mA | 6V | SILICON | SWITCHING | 800mV | 150mW Ta | 0.5A | 20V | N-Channel | 700m Ω @ 600mA, 4.5V | 900mV @ 250μA | 500mA Ta | 0.75nC @ 4.5V | 1.8V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1040X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 32.006612mg | 6 | On/Off | Slew Rate Controlled | 174mW | SI1040 | 2 | SC-89-6 | P-Channel | 1.8V~8V | 430mA | 8V | 1 | General Purpose | High Side | 430mA | 625mOhm | 500mOhm | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2333CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si2333cdst1e3-datasheets-6790.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 1.437803g | No SVHC | 35mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 13 ns | 35ns | 35 ns | 45 ns | 5.1A | 8V | SILICON | SWITCHING | 12V | -400mV | 1.25W Ta 2.5W Tc | -12V | P-Channel | 1225pF @ 6V | 35m Ω @ 5.1A, 4.5V | 1V @ 250μA | 7.1A Tc | 25nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32448DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sip32448dnpt1ge4-datasheets-9113.pdf | 4-UFDFN Exposed Pad | 16 Weeks | On/Off | Slew Rate Controlled | 4-TDFN (1.2x1.6) | N-Channel | 1.7V~5.5V | 1 | General Purpose | High Side | 3A | Not Required | 38mOhm | 1:1 |
