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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Number of Receivers | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Max Input Voltage | JESD-609 Code | Feature | Terminal Finish | Applications | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Min Input Voltage | Output Current | Output Type | Voltage - Input | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switching Frequency | Number of Transmitters | Power - Max | Input Voltage-Nom | Power Dissipation-Max | Number of Inputs | Protocol | Efficiency | Control Mode | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | On-state Resistance Match-Nom | Switching | Voltage - Output | Switch-on Time-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Number of Drivers/Receivers | Duplex | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI3424BDV-T1-E3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3424bdvt1ge3-datasheets-2612.pdf | SOT-23-6 Thin, TSOT-23-6 | Unknown | 6 | No | Single | 2.1W | 1 | 6-TSOP | 735pF | 18 ns | 85ns | 12 ns | 17 ns | 8A | 20V | 30V | 3V | 2.1W Ta 2.98W Tc | 28mOhm | 30V | N-Channel | 735pF @ 15V | 3 V | 28mOhm @ 7A, 10V | 3V @ 250μA | 8A Tc | 19.6nC @ 10V | 28 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9169BQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -25°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9169bqt1e3-datasheets-7751.pdf | 20-TSSOP (0.173, 4.40mm Width) | 6.5mm | 4.4mm | 6V | 20 | 190.990737mg | 20 | yes | EAR99 | CAN ALSO BE CONFIGURED AS BUCK CONVERTER | No | 1 | 6V | e3 | MATTE TIN | Converter, 1-Cell Lithium Ion Portable Communication Devices | DUAL | GULL WING | 250 | 0.65mm | SI9169 | 20 | SWITCHING REGULATOR | 40 | 2.7V | 1A | Fixed | 2.7V~6V | 1 | 2MHz | 3.3V | 95 % | VOLTAGE-MODE | PULSE WIDTH MODULATION | BOOST | Adj to 1.3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4438DY-T1-GE3 | Vishay Siliconix | $0.97 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4438dyt1e3-datasheets-6261.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 17 ns | 86ns | 10 ns | 47 ns | 36A | 20V | SILICON | SWITCHING | 30V | 30V | 3.5W Ta 7.8W Tc | 24A | 70A | 0.0027Ohm | N-Channel | 4645pF @ 15V | 2.7m Ω @ 20A, 10V | 2.6V @ 250μA | 36A Tc | 126nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9243AEY | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
download | Transceiver | Surface Mount | Surface Mount | -40°C~125°C | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishay-si9243aey-datasheets-2361.pdf | 8-SOIC (0.154, 3.90mm Width) | 3mA | 506.605978mg | No SVHC | 36V | 6V | 8 | 2 | No | 4.5V~5.5V | SI9243 | 1 | 8-SOIC | 1 | ISO 9141 | 1/2 | Half | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4354DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4354dyt1ge3-datasheets-6331.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | R-PDSO-G8 | 8 ns | 10ns | 9 ns | 28 ns | 9.5A | 12V | SILICON | SWITCHING | 2.5W Ta | 0.0165Ohm | 30V | N-Channel | 16.5m Ω @ 9.5A, 10V | 1.6V @ 250μA | 9.5A Ta | 10.5nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG534ADN-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 600μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg534adne3-datasheets-2500.pdf | 20-LCC (J-Lead) | 9.04mm | 3.69mm | 9.04mm | 500MHz | Lead Free | 2mA | 20 | 722.005655mg | 18V | 10V | 90Ohm | 20 | yes | unknown | 1 | e3 | T-Switch Configuration | Matte Tin (Sn) | Ultrasound, Video | 450mW | QUAD | J BEND | 260 | 15V | DG534 | 20 | 2 | 40 | 450mW | 515-3V | Not Qualified | 300 ns | 175 ns | 15V | 12V | Multiplexer | 300 ns | Dual, Single | 10V | -3V | 4 | 90Ohm | 90Ohm | 9Ohm | BREAK-BEFORE-MAKE | 500ns | 2:1 | 10V~21V | SPDT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4886DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4886dyt1e3-datasheets-6381.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 14 ns | 5ns | 5 ns | 42 ns | 13A | 20V | SILICON | SWITCHING | 30V | 30V | 1.56W Ta | 9.5A | N-Channel | 800 mV | 10m Ω @ 13A, 10V | 800mV @ 250μA (Min) | 9.5A Ta | 20nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG535DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 5μA | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg535dje3-datasheets-2519.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 15V | 500MHz | 50μA | 28 | 4.190003g | 16.5V | 10V | 90Ohm | 28 | no | No | 1 | e0 | T-Switch Configuration | Tin/Lead (Sn/Pb) | Video | 625mW | DUAL | 15V | 2.54mm | 28 | 1 | 300 ns | 150 ns | Multiplexer | 300 ns | Single | 90Ohm | BREAK-BEFORE-MAKE | 0.02A | 16:1 | 10V~16.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4823DY-T1-E3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4823dyt1ge3-datasheets-0720.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1 | 18 ns | 40ns | 40 ns | 18 ns | 3.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 1.7W Ta 2.8W Tc | -20V | P-Channel | 660pF @ 10V | 108m Ω @ 3.3A, 4.5V | 1.5V @ 250μA | 4.1A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG536DN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 5μA | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg535dje3-datasheets-2519.pdf | 44-LCC (J-Lead) | 16.66mm | 3.69mm | 16.66mm | 15V | 500MHz | 50μA | 44 | 2.386605g | 16.5V | 10V | 90Ohm | 44 | no | No | 1 | e0 | T-Switch Configuration | Tin/Lead (Sn/Pb) | Video | 450mW | QUAD | J BEND | 15V | 44 | 1 | 450mW | 300 ns | 150 ns | Multiplexer | 300 ns | Single | 16 | 90Ohm | BREAK-BEFORE-MAKE | 0.02A | 16:1 | 10V~16.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5449DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5449dct1e3-datasheets-6469.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 8 | 1 | Single | 1.3W | 1206-8 ChipFET™ | 13 ns | 14ns | 14 ns | 35 ns | -4.3A | 12V | 30V | 1.3W Ta | 85mOhm | P-Channel | 85mOhm @ 3.1A, 4.5V | 600mV @ 250μA (Min) | 3.1A Ta | 11nC @ 4.5V | 85 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5517DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5517dut1ge3-datasheets-1188.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | 8.3W | C BEND | 260 | SI5517 | 8 | 40 | 2.3W | 2 | Other Transistors | R-XDSO-C6 | 8 ns | 35ns | 55 ns | 40 ns | 7.2A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6A | 0.039Ohm | 20V | N and P-Channel | 520pF @ 10V | 39m Ω @ 4.4A, 4.5V | 1V @ 250μA | 6A | 16nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7368DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7368dpt1ge3-datasheets-6503.pdf | PowerPAK® SO-8 | 8 | EAR99 | No | e3 | Matte Tin (Sn) | Single | 1.7W | 1 | FET General Purpose Power | 22 ns | 20ns | 20 ns | 65 ns | 13A | 16V | 1.7W Ta | 20V | N-Channel | 5.5m Ω @ 20A, 10V | 1.8V @ 250μA | 13A Ta | 25nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7913DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7913dnt1ge3-datasheets-1906.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 37MOhm | 8 | yes | EAR99 | Tin | e3 | 1.3W | C BEND | 260 | SI7913 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | Not Qualified | S-XDSO-C6 | 20 ns | 70ns | 70 ns | 72 ns | -7.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 5A | -20V | 2 P-Channel (Dual) | 37m Ω @ 7.4A, 4.5V | 1V @ 250μA | 5A | 24nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7136DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7136dpt1e3-datasheets-6027.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 9 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1V | 5W Ta 39W Tc | 29.5A | 70A | 0.0032Ohm | 45 mJ | 20V | N-Channel | 3380pF @ 10V | 1 V | 3.2m Ω @ 20A, 10V | 3V @ 250μA | 30A Tc | 78nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4963BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4963bdyt1e3-datasheets-2990.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 32mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4963 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 30 ns | 40ns | 40 ns | 80 ns | 6.5A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | -600mV | 4.9A | -20V | 2 P-Channel (Dual) | 32m Ω @ 6.5A, 4.5V | 1.4V @ 250μA | 4.9A | 21nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7407DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7407dnt1ge3-datasheets-6592.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 8 | 1 | Single | 1.5W | 1 | PowerPAK® 1212-8 | 30 ns | 50ns | 50 ns | 200 ns | 9.9A | 8V | 12V | 1.5W Ta | 12mOhm | P-Channel | 12mOhm @ 15.6A, 4.5V | 1V @ 400μA | 9.9A Ta | 59nC @ 4.5V | 12 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7232DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7232dnt1ge3-datasheets-4961.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.17mm | 3.05mm | Lead Free | 6 | 14 Weeks | 8 | yes | EAR99 | Tin | No | e3 | 23W | C BEND | 260 | SI7232 | 8 | 30 | 2.6W | 2 | FET General Purpose Power | 150°C | S-XDSO-C6 | 10 ns | 10ns | 10 ns | 35 ns | 10A | 8V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 40A | 0.0164Ohm | 11 mJ | 20V | 2 N-Channel (Dual) | 1220pF @ 10V | 16.4m Ω @ 10A, 4.5V | 1V @ 250μA | 25A | 32nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7447ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7447adpt1e3-datasheets-6636.pdf | PowerPAK® 1212-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 5.4W | 1 | Other Transistors | R-XDSO-C5 | 20 ns | 25ns | 98 ns | 82 ns | 21.5A | 25V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83.3W Tc | 60A | 0.0065Ohm | 30V | P-Channel | 4650pF @ 15V | 6.5m Ω @ 24A, 10V | 3V @ 250μA | 35A Tc | 150nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA975DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia975djt1ge3-datasheets-5566.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 41mOhm | 6 | EAR99 | Tin | No | 7.8W | SIA975 | 6 | Dual | 1.9W | 2 | Other Transistors | 22 ns | 22ns | 15 ns | 32 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | -400mV | -12V | 2 P-Channel (Dual) | 1500pF @ 6V | 41m Ω @ 4.3A, 4.5V | 1V @ 250μA | 26nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7440DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7440dpt1ge3-datasheets-6684.pdf | PowerPAK® SO-8 | Lead Free | 5 | 6.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 30 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 16ns | 16 ns | 75 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 30V | N-Channel | 6.5m Ω @ 21A, 10V | 3V @ 250μA | 12A Ta | 35nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB70EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqjb70ept1ge3-datasheets-7304.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | 2 | 27W | 175°C | PowerPAK® SO-8 Dual | 9 ns | 13 ns | 11.3A | 20V | 100V | 27W Tc | 78mOhm | 100V | 2 N-Channel (Dual) | 220pF @ 25V | 95mOhm @ 4A, 10V | 3.5V @ 250μA | 11.3A Tc | 7nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7447ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7447adpt1e3-datasheets-6636.pdf | PowerPAK® 1212-8 | 5 | 8 | No | DUAL | C BEND | Single | 5.4W | 1 | R-PDSO-C5 | 20 ns | 25ns | 98 ns | 82 ns | 21.5A | 25V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83.3W Tc | 35A | 60A | 0.0065Ohm | 30V | P-Channel | 4650pF @ 15V | 6.5m Ω @ 24A, 10V | 3V @ 250μA | 35A Tc | 150nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7900AEDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7900aednt1e3-datasheets-8896.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | C BEND | 260 | SI7900 | 8 | Dual | 40 | 1.5W | 2 | FET General Purpose Power | S-XDSO-C5 | 850 ns | 1.3μs | 1.3 μs | 8.6 μs | 8.5A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6A | 30A | 20V | 2 N-Channel (Dual) Common Drain | 26m Ω @ 8.5A, 4.5V | 900mV @ 250μA | 6A | 16nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4104DY-T1-GE3 | Vishay Siliconix | $0.30 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4104dyt1e3-datasheets-6191.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | Unknown | 8 | EAR99 | No | DUAL | GULL WING | 8 | Single | 5W | 1 | 9 ns | 9ns | 8 ns | 10 ns | 3.2A | 20V | SILICON | SWITCHING | 2.5V | 2.5W Ta 5W Tc | 4.6A | 4 mJ | 100V | N-Channel | 446pF @ 50V | 105m Ω @ 5A, 10V | 4.5V @ 250μA | 4.6A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1912AEEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | /files/vishaysiliconix-sq1912aeeht1ge3-datasheets-9964.pdf | PowerPAK® SC-70-6 Dual | 12 Weeks | 6 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 66 ns | 108ns | 390 ns | 715 ns | 800mA | 12V | 20V | 1.5W | 2 N-Channel (Dual) | 27pF @ 10V | 280m Ω @ 1.2A, 4.5V | 1.5V @ 250μA | 800mA Tc | 1.25nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4829DY-T1-GE3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4829dyt1e3-datasheets-6923.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 30 | 1 | Not Qualified | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta 3.1W Tc | 2A | 0.215Ohm | P-Channel | 210pF @ 10V | 215m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 2A Tc | 8nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISF00DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf00dnt1ge3-datasheets-0434.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 30V | 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2700pF @ 15V | 5mOhm @ 10A, 10V | 2.1V @ 250μA | 60A Tc | 53nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8451DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si8451dbt2e1-datasheets-2412.pdf | 6-UFBGA | 6 | 80mOhm | yes | EAR99 | e3 | PURE MATTE TIN | BOTTOM | BALL | 260 | 8 | 30 | 2.77W | 1 | Other Transistors | Not Qualified | R-PBGA-B6 | 30ns | 30 ns | 45 ns | -10.8A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.77W Ta 13W Tc | 5A | 15A | -20V | P-Channel | 750pF @ 10V | 80m Ω @ 1A, 4.5V | 1V @ 250μA | 10.8A Tc | 24nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5935CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5935cdct1e3-datasheets-1877.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | C BEND | 260 | SI5935 | 8 | Dual | 30 | 1.3W | 2 | Other Transistors | 10 ns | 32ns | 32 ns | 25 ns | 3.1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.1Ohm | -20V | 2 P-Channel (Dual) | 455pF @ 10V | 100m Ω @ 3.1A, 4.5V | 1V @ 250μA | 4A | 11nC @ 5V | Standard |
