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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIHF35N60EF-GE3 | Vishay Siliconix | $5.24 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf35n60efge3-datasheets-9677.pdf | TO-220-3 Full Pack | 21 Weeks | TO-220 Full Pack | 600V | 39W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM201BEC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF065N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf065n60ege3-datasheets-9868.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 600V | 39W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM302BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb22n60ee3-datasheets-1845.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 19 Weeks | 1.437803g | 3 | AVALANCHE RATED | No | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 18 ns | 68ns | 54 ns | 66 ns | 21A | 20V | SILICON | SWITCHING | 600V | 600V | 227W Tc | 56A | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9678801EA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf35n60ege3-datasheets-2063.pdf | TO-220-3 Full Pack | 18 Weeks | 600V | 39W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 92042022A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | 20-LCC | 20 | 44V | 13V | 20 | 2 | 750mW | QUAD | NO LEAD | NOT SPECIFIED | 15V | 20 | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 750mW | 2 | 20V | 5V | -15V | 30mA | 8 | 100Ohm | 75 dB | 15Ohm | 150ns | 4:1 | SP4T | ±15V | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP065N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihp065n60ege3-datasheets-2394.pdf | TO-220-3 | 19.31mm | 14 Weeks | 1 | 250W | 150°C | 28 ns | 54 ns | 40A | 30V | 250W Tc | 600V | N-Channel | 2700pF @ 100V | 65m Ω @ 16A, 10V | 5V @ 250μA | 40A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9562901CA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | CDIP | 36V | 13V | 14 | 2 | 825mW | 22V | 7V | 2 | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS11N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | 1 | Single | 170W | 1 | D2PAK | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 4V | 170W Tc | 520mOhm | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM185BXA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 14 | 2 | 900mW | 18V | 10V | 4 | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB20N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihb20n50ege3-datasheets-3942.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | Unknown | 3 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 17 ns | 27ns | 25 ns | 48 ns | 19A | 20V | SILICON | SWITCHING | 4V | 179W Tc | 42A | 204 mJ | 500V | N-Channel | 1640pF @ 100V | 184m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2006 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 547.485991mg | No SVHC | 12V | 2.7V | 33Ohm | 16 | yes | No | 4 | e3 | MATTE TIN | 650mW | GULL WING | 260 | 5V | 1.27mm | DG413 | 16 | 1 | 40 | 650mW | Multiplexer or Switches | 280MHz | SPST | 50 ns | 35 ns | 6V | 5V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 30Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N10-10-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sup85n1010ge3-datasheets-2385.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 14 Weeks | 6.000006g | No SVHC | 10.5mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 3 | 1 | Single | 30 | 250W | 1 | FET General Purpose Powers | 12 ns | 90ns | 130 ns | 55 ns | 85A | 20V | SILICON | DRAIN | 3V | 3.75W Ta 250W Tc | TO-220AB | 240A | 280 mJ | 100V | N-Channel | 6550pF @ 25V | 3 V | 10.5m Ω @ 30A, 10V | 3V @ 250μA | 85A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG613DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 1μA | 16 | 665.986997mg | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | No | 4 | 5μA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG613 | 16 | 1 | 30 | 600mW | Multiplexer or Switches | 1 | 500MHz | DPDT, SPST | 35 ns | 25 ns | 15V | Dual, Single | 10V | -3V | 4 | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | 50ns | 10V~18V ±10V~15V | 2:2 | DPDT | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1N60APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 7Ohm | 3 | No | 18A | 650V | 1 | Single | 36W | 1 | D-Pak | 229pF | 9.8 ns | 14ns | 20 ns | 18 ns | 1.4A | 30V | 600V | 600V | 36W Tc | 440 ns | 7Ohm | 600V | N-Channel | 229pF @ 25V | 4 V | 7Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 7 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2002DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg2002dlt1ge3-datasheets-7638.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 1μA | 6 | 5.5V | 1.8V | 7.8Ohm | 6 | yes | No | 1 | 10nA | e3 | Matte Tin (Sn) | 250mW | DUAL | GULL WING | 260 | 2V | DG2002 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 31 ns | 17 ns | Single | 2 | 1 | 7.8Ohm | 67 dB | BREAK-BEFORE-MAKE | 2:1 | 1.8V~5.5V | SPDT | 1nA | 5pF | 8ns, 6ns | 5pC | -69dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP15N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp15n60ee3-datasheets-5933.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | Lead Free | 14 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 180W | 1 | TO-220AB | 1.35nF | 17 ns | 51ns | 33 ns | 35 ns | 15A | 20V | 600V | 2V | 180W Tc | 280mOhm | N-Channel | 1350pF @ 100V | 280mOhm @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 280 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2043DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2043dnt1e4-datasheets-5348.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 57.09594mg | 5.5V | 1.8V | 1.5Ohm | 16 | yes | 4 | e4 | PALLADIUM GOLD OVER NICKEL | 1.88W | QUAD | NO LEAD | 260 | 2V | 0.65mm | DG2043 | 16 | 1 | 30 | Multiplexer or Switches | 2/5V | 4 | Not Qualified | SPST | 42 ns | 32 ns | Single | SEPARATE OUTPUT | 1.5Ohm | 63 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 82ns | 1:1 | 1.8V~5.5V | SPST - NO/NC | 26pF | 42ns, 32ns | 3pC | 300m Ω (Max) | -93dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3443CDV-T1-E3 | Vishay Siliconix | $0.36 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3443cdvt1e3-datasheets-8804.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 60mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | 27 ns | 59ns | 11 ns | 30 ns | 3.9A | 12V | SILICON | SWITCHING | 20V | 20V | -600mV | 2W Ta 3.2W Tc | 4.7A | 20A | P-Channel | 610pF @ 10V | -600 mV | 60m Ω @ 4.7A, 4.5V | 1.5V @ 250μA | 5.97A Tc | 12.4nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2707DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2707dnt1e4-datasheets-5380.pdf | 16-WFQFN | 3V | 16 | 4.3V | 1.65V | 5.5Ohm | 16 | yes | Gold | No | 1 | e4 | 525mW | QUAD | 260 | 3.15V | 0.4mm | DG2707 | 16 | 4 | 40 | 525mW | 3.15V | 0.001mA | 2 | 120MHz | Multiplexer | Single | 300mA | 8 | 5.5Ohm | 70 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 45ns | 55ns | 0.3A | 4:1 | 1.65V~4.3V | SP4T | 5nA | 16pF 42pF | 45ns, 35ns | -14pC | 300m Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-2n7002et1e3-datasheets-4071.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 12 Weeks | 1.437803g | 3Ohm | 3 | yes | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | NOT SPECIFIED | 3 | 1 | Single | NOT SPECIFIED | 350mW | 1 | FET General Purpose Powers | Not Qualified | 150°C | 13 ns | 18 ns | 240mA | 20V | SILICON | SWITCHING | 60V | 2V | 350mW Ta | 0.24A | 68V | N-Channel | 21pF @ 5V | 3 Ω @ 250mA, 10V | 2.5V @ 250μA | 240mA Ta | 0.6nC @ 4.5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2520DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 22μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2521dvt1e3-datasheets-5374.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 22μA | 6 | 5.5V | 1.8V | 800mOhm | 6 | yes | ALSO OPERATES WITH 5V | unknown | 1 | e3 | MATTE TIN | 570mW | DUAL | GULL WING | 260 | 3V | 0.95mm | DG2520 | 6 | 1 | 40 | 570mW | Multiplexer or Switches | 3V | Not Qualified | 40MHz | 45 ns | 17 ns | Single | 2 | 1 | 800mOhm | 51 dB | BREAK-BEFORE-MAKE | 35ns | NC | 2:1 | 1.8V~5.5V | SPDT | 2nA | 50pF | 35ns, 15ns | 224pC | 60m Ω (Max) | -57dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1021R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1021rt1ge3-datasheets-2093.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | Unknown | 4Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 250mW | 1 | 20 ns | 35 ns | -190mA | 20V | SILICON | SWITCHING | 60V | -2V | 250mW Ta | -60V | P-Channel | 23pF @ 25V | 4 Ω @ 500mA, 10V | 3V @ 250μA | 190mA Ta | 1.7nC @ 15V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2753DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2753dnt1e4-datasheets-5435.pdf | 16-VFQFN Exposed Pad | 3mm | 900μm | 3mm | 1μA | 16 | 57.09594mg | 4.3V | 1.65V | 600mOhm | 16 | yes | 3 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.385W | QUAD | NO LEAD | 260 | 2.7V | 0.5mm | DG2753 | 16 | 1 | 40 | Multiplexer or Switches | 3 | Not Qualified | 60 ns | 30 ns | Single | SEPARATE OUTPUT | 1.2Ohm | 90 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.65V~4.3V | SPDT | 2nA | 35pF | 60ns, 30ns | -25pC | 600m Ω (Max) | -90dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2399DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2399dst1ge3-datasheets-3099.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | 30 | 2.5W | 1 | Other Transistors | 150°C | 22 ns | 20ns | 9 ns | 28 ns | -6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -600mV | 2.5W Tc | 6A | -20V | P-Channel | 835pF @ 10V | -600 mV | 34m Ω @ 5.1A, 10V | 1.5V @ 250μA | 6A Tc | 20nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3015DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.753mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg3015dbt2e1-datasheets-5466.pdf | 16-WFBGA | 1μA | 16 | 25 Weeks | 3.3V | 2.7V | 1.2Ohm | 16 | yes | unknown | 2 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 719mW | BOTTOM | BALL | 260 | 3V | 0.5mm | DG3015 | 16 | 2 | 40 | Multiplexer or Switches | 3V | 2 | Not Qualified | 65 ns | 60 ns | Single | SEPARATE OUTPUT | 1.2Ohm | 67 dB | 0.15Ohm | BREAK-BEFORE-MAKE | 2:2 | 2.7V~3.3V | DPDT | 2nA | 67pF | 65ns, 60ns | 7pC | 150m Ω | -70dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1499DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1499dht1e3-datasheets-4944.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 30 | 2.5W | 1 | Other Transistors | 8 ns | 40ns | 60 ns | 46 ns | 1.6A | 5V | SILICON | SWITCHING | 8V | 2.5W Ta 2.78W Tc | 0.078Ohm | -8V | P-Channel | 650pF @ 4V | 78m Ω @ 2A, 4.5V | 800mV @ 250μA | 1.6A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 700μA | ROHS3 Compliant | 2003 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 500μA | 16 | 665.986997mg | No SVHC | 12V | 2.7V | 17Ohm | 16 | yes | VIDEO APPLICATION | No | 1 | 200μA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 5V | DG408 | 16 | 8 | 40 | 600mW | 1 | 150 ns | 150 ns | 6V | 5V | Multiplexer | 65 ns | Dual, Single | 3V | -5V | 29Ohm | 30Ohm | 70 dB | BREAK-BEFORE-MAKE | 45ns | 60ns | 2.7V~12V ±3V~6V | 0.03A | 8:1 | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz |
