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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Number of Receivers | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Packing Method | Number of Functions | Voltage - Input (Max) | Max Input Voltage | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Applications | Polarity | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Accuracy | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Max Output Voltage | Min Input Voltage | Min Output Voltage | Output Voltage | Output Current | Dropout Voltage | Output Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Voltage - Output 1 | Current - Output 1 | Threshold Voltage | Number of Transmitters | Output Configuration | Power - Max | Output Voltage 1 | Input Voltage-Nom | Input Voltage (Min) | Power Dissipation-Max | JEDEC-95 Code | Topology | Max Duty Cycle | Number of Inputs | Voltage - Output 2 | Current - Output 2 | Protocol | Current - Supply (Max) | Control Mode | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | On-state Resistance Match-Nom | Switching | Current - Quiescent (Iq) | Internal Switch(s) | Dropout Voltage1-Nom | Avalanche Energy Rating (Eas) | Control Features | Current - Output | Voltage - Output (Min/Fixed) | Dropout Voltage1-Max | Voltage Tolerance-Max | Input Voltage Absolute-Max | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | Min Current Limit | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Number of Regulators | Protection Features | Voltage Dropout (Max) | PSRR | Frequency - Switching | Signal Current-Max | Nominal Vgs | Output Isolation | Number of Drivers/Receivers | Duplex | w/Sequencer | Voltage/Current - Output 1 | Voltage/Current - Output 2 | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHF18N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf18n50ce3-datasheets-4486.pdf | TO-220-3 | 3 | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 38W | 1 | FET General Purpose Power | 22 ns | 60ns | 30 ns | 45 ns | 18A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 38W Tc | TO-220AB | 72A | 0.27Ohm | N-Channel | 2942pF @ 25V | 270m Ω @ 10A, 10V | 5V @ 250μA | 18A Tc | 76nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9185DMP-18-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9185dmp12t1e3-datasheets-0783.pdf | 500mA | PowerPAK® MLP33-8 | 3mm | 900μm | 3mm | 8 | 6V | 6V | Positive | 2.5W | SI9185 | PowerPAK® MLP33-8 | 2V | 1.8V | 170mV | Fixed | 1 | Positive | 4mA | 1.5mA | Enable, Power On Reset | 500mA | 1.8V | 700mA | 1 | Over Temperature, Short Circuit | 0.825V @ 500mA | 60dB ~ 40dB (1kHz ~ 100kHz) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3442EV-T1-GE3 | Vishay Siliconix | $1.53 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq3442evt1ge3-datasheets-0160.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | EAR99 | No | 8541.21.00.95 | 1.7W | DUAL | GULL WING | 260 | 6 | Single | 40 | 1 | 5 ns | 15ns | 6 ns | 14 ns | 4.3A | 8V | 1V | 0.055Ohm | 20V | N-Channel | 405pF @ 10V | 1 V | 55m Ω @ 4A, 4.5V | 1.6V @ 250μA | 4.3A Tc | 5.5nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI91871DMP-33-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si91871dmp30e3-datasheets-0868.pdf | PowerPAK® MLP33-5 | 3.1mm | 1.15mm | 3.05mm | 6V | 6V | Positive | 2.3W | SI91871 | PowerPAK® MLP33-5 | 2V | 3.3V | 130mV | Fixed | 1 | Positive | 275μA | 150μA | Enable | 300mA | 3.3V | 500mA | 1 | Over Temperature, Reverse Polarity, Short Circuit | 0.415V @ 300mA | 60dB ~ 30dB (1kHz ~ 100kHz) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N06-07L-GE3 | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishay-sud50n0607lge3-datasheets-3011.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 3 | EAR99 | unknown | FET General Purpose Power | 96A | Single | 60V | 1V | 136W Tc | N-Channel | 5800pF @ 25V | 7.4m Ω @ 20A, 10V | 3V @ 250μA | 96A Tc | 144nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP21107DR-26-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip21106dr33e3-datasheets-7391.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 1mm | 1.25mm | 5 | 19.986414mg | yes | EAR99 | No | TAPE AND REEL | 1 | 6V | e3 | Matte Tin (Sn) | 187mW | DUAL | GULL WING | 260 | 0.65mm | SIP21107-26 | 5 | 1 % | 10 | Other Regulators | R-PDSO-G5 | 150mA | 2.2V | 2.6V | 160mV | Fixed | 1 | Positive | 2.6V | 85μA | 0.16V | Enable, Power Good | 4% | 6.5V | 170mA | 1 | Over Temperature, Short Circuit | 0.22V @ 150mA | 72dB ~ 38dB (1kHz ~ 100kHz) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1046R-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1046rt1ge3-datasheets-0104.pdf | SC-75A | 1.6mm | 700μm | 760μm | 3 | 1 | Single | 250mW | 1 | SC-75A | 66pF | 17 ns | 19ns | 19 ns | 76 ns | 606mA | 8V | 20V | 250mW Ta | 420mOhm | N-Channel | 66pF @ 10V | 420mOhm @ 606mA, 4.5V | 950mV @ 250μA | 1.49nC @ 5V | 420 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP21107DT-12-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip21106dr33e3-datasheets-7391.pdf | SOT-23-5 Thin, TSOT-23-5 | 3.05mm | 950μm | 1.65mm | 5 | 6.293594mg | yes | EAR99 | unknown | TAPE AND REEL | 1 | 6V | e3 | Matte Tin (Sn) | 305mW | DUAL | GULL WING | 260 | 0.95mm | SIP21107-12 | 5 | 1.5 % | 10 | Other Regulators | Not Qualified | R-PDSO-G5 | 150mA | 2.2V | 1.2V | Fixed | 1 | Positive | 1.2V | 85μA | 0.16V | Enable, Power Good | 0.3V | 4% | 6.5V | 170mA | 1 | Over Temperature, Short Circuit | 72dB ~ 38dB (1kHz ~ 100kHz) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3433BDV-T1-GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3433bdvt1e3-datasheets-8123.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | Single | 30 | 1 | Other Transistors | 15 ns | 45ns | 60 ns | 80 ns | -4.3A | 8V | SILICON | 20V | -450mV | 1.1W Ta | 0.042Ohm | -20V | P-Channel | -450 mV | 42m Ω @ 5.6A, 4.5V | 850mV @ 250μA | 4.3A Ta | 18nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP21106DVP-33-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip21106dr33e3-datasheets-7391.pdf | PowerPAK® TSC-75-6 | 1.6mm | 600μm | 1.6mm | 6 | 6 | yes | EAR99 | No | TAPE AND REEL | 1 | 6V | e3 | Matte Tin (Sn) | 420mW | DUAL | 260 | 0.5mm | SIP21106-33 | 6 | 1 % | 40 | Other Regulators | 150mA | 2.2V | 3.3V | 160mV | Fixed | 1 | Positive | 3.3V | 85μA | 0.16V | Enable | 4% | 170mA | 1 | Over Temperature, Short Circuit | 0.22V @ 150mA | 75dB ~ 40dB (1kHz ~ 100kHz) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2321DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2321dst1ge3-datasheets-6173.pdf | TO-236-3, SC-59, SOT-23-3 | No | Single | 710mW | SOT-23-3 (TO-236) | 715pF | 15 ns | 35ns | 40 ns | 60 ns | 2.9A | 8V | 20V | 710mW Ta | 57mOhm | 20V | P-Channel | 715pF @ 6V | 57mOhm @ 3.3A, 4.5V | 900mV @ 250μA | 2.9A Ta | 13nC @ 4.5V | 57 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP21107DVP-285-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip21106dr33e3-datasheets-7391.pdf | PowerPAK® TSC-75-6 | 1.6mm | 600μm | 1.6mm | 6 | 6 | yes | EAR99 | No | TAPE AND REEL | 1 | 6V | e3 | Matte Tin (Sn) | 420mW | DUAL | 260 | 0.5mm | SIP21107-285 | 6 | 1 % | 40 | Other Regulators | 150mA | 2.2V | 2.85V | 160mV | Fixed | 1 | Positive | 2.85V | 85μA | 0.16V | Enable, Power Good | 4% | 170mA | 1 | Over Temperature, Short Circuit | 0.22V @ 150mA | 72dB ~ 38dB (1kHz ~ 100kHz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3812DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3812dvt1e3-datasheets-8226.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 30 | 830mW | 1 | FET General Purpose Power | 10 ns | 30ns | 6 ns | 14 ns | 2.4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 600mV | 830mW Ta | 2A | 0.125Ohm | 20V | N-Channel | 600 mV | 125m Ω @ 2.4A, 4.5V | 600mV @ 250μA (Min) | 2A Ta | 4nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9120DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Through Hole | -40°C~85°C TA | Bulk | 1 (Unlimited) | BCDMOS | 1MHz | 1.5mA | ROHS3 Compliant | /files/vishaysiliconix-si9120dje3-datasheets-5329.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 16 | 1.627801g | Unknown | 16 | yes | EAR99 | 1 | e3 | Matte Tin (Sn) | 750mW | DUAL | 2.54mm | SI9120 | 16 | SWITCHING CONTROLLER | 750mW | Switching Regulator or Controllers | 9.7V | 125mA | 40ns | 75 ns | 1 | 10V | 9.5V | Flyback, Forward | 50 % | CURRENT-MODE | PULSE WIDTH MODULATION | SINGLE | 20Ohm | No | 9.5V~13.5V | 40kHz~1MHz | Isolated | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4451DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4451dyt1e3-datasheets-9087.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 32 Weeks | 186.993455mg | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | Other Transistors | Not Qualified | 55 ns | 235 ns | 315 ns | 10A | 8V | SILICON | SWITCHING | 12V | 1.5W Ta | -12V | P-Channel | 8.25m Ω @ 14A, 4.5V | 800mV @ 850μA | 10A Ta | 120nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9241AEY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Transceiver | Surface Mount | Surface Mount | -40°C~125°C | Bulk | 1 (Unlimited) | SMD/SMT | 125°C | -40°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9241aeyt1e3-datasheets-6015.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 5.5V | 4.5V | 8 | 1 | No | 1.4mA | 4.5V~5.5V | SI9241 | 1 | 8-SOIC | 1 | ISO 9141 | 1/1 | Half | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4390DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4390dyt1ge3-datasheets-6295.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 12 Weeks | 186.993455mg | 9.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.4W | 1 | 16 ns | 6ns | 6 ns | 43 ns | 8.5A | 20V | SILICON | SWITCHING | 1.4W Ta | 30V | N-Channel | 9.5m Ω @ 12.5A, 10V | 2.8V @ 250μA | 8.5A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC401ACD-T1-GE3 | Vishay Siliconix | $1.80 |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | Surface Mount | -40°C~85°C | Digi-Reel® | 1 (Unlimited) | 130μA | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic401bcdt1ge3-datasheets-8994.pdf | 32-PowerVFQFN | 5mm | 850μm | 5mm | 17V | Lead Free | 19 Weeks | No SVHC | 32 | EAR99 | 17V | 3V~17V | SIC401 | SWITCHING REGULATOR | 15A | 5.5V | 3V | 600mV | 5.5V | 15A | Adjustable | 2 | 5.5V | 15A | Step-Down (Buck) Synchronous (1), Linear (LDO) (1) | 750mV | 200mA | 200kHz~1MHz | No | 0.6V~5.5V 15A | Adj to 0.75V 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4833ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4833adyt1e3-datasheets-8435.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1 | 7 ns | 11ns | 8 ns | 19 ns | -4.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 1.93W Ta 2.75W Tc | 20A | 0.072Ohm | -30V | P-Channel | 750pF @ 15V | 72m Ω @ 3.6A, 10V | 2.5V @ 250μA | 4.6A Tc | 15nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG536DN-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg535dje3-datasheets-2519.pdf | 44-LCC (J-Lead) | 16.66mm | 3.69mm | 16.66mm | 15V | 500MHz | Lead Free | 50μA | 44 | 2.386605g | 16.5V | 10V | 90Ohm | 44 | yes | unknown | 1 | e3 | T-Switch Configuration | Matte Tin (Sn) | Video | 450mW | QUAD | J BEND | 260 | 15V | DG536 | 44 | 1 | 40 | 450mW | Not Qualified | 300 ns | 150 ns | Multiplexer | 300 ns | Single | 16 | 90Ohm | 90Ohm | 9Ohm | BREAK-BEFORE-MAKE | 0.02A | 16:1 | 10V~16.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5445BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5445bdct1e3-datasheets-8498.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 33MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | Other Transistors | 12 ns | 22ns | 50 ns | 75 ns | -71A | 8V | SILICON | 1.3W Ta | 5.2A | -8V | P-Channel | 33m Ω @ 5.2A, 4.5V | 1V @ 250μA | 5.2A Ta | 21nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG534ADJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 600μA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg534adne3-datasheets-2500.pdf | 20-DIP (0.300, 7.62mm) | 26.92mm | 3.81mm | 7.11mm | 500MHz | 2mA | 2.259996g | 18V | 10V | 90Ohm | 20 | no | No | T-Switch Configuration | Ultrasound, Video | 625mW | 20 | 2 | 625mW | 300 ns | 175 ns | 15V | 12V | Multiplexer | 300 ns | Dual, Single | 10V | 4 | 90Ohm | 2:1 | 10V~21V | SPDT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4858DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4858dyt1ge3-datasheets-6391.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 3.5W | 1 | FET General Purpose Power | 21 ns | 10ns | 10 ns | 83 ns | 20A | 20V | SILICON | SWITCHING | 30V | 30V | 1.6W Ta | 13A | 0.00525Ohm | N-Channel | 5.25m Ω @ 20A, 10V | 1V @ 250μA (Min) | 13A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ992EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqj992ept1ge3-datasheets-1026.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 47mOhm | 8 | EAR99 | 34W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 34W | 2 | R-PSSO-G4 | 15A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 60A | 2 N-Channel (Dual) | 446pF @ 30V | 56.2m Ω @ 3.7A, 10V | 2.5V @ 250μA | 12nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5404BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5404bdct1e3-datasheets-1082.pdf | 8-SMD, Flat Lead | 8 | 24 Weeks | 84.99187mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Powers | 12 ns | 12ns | 10 ns | 25 ns | 7.5A | 12V | SILICON | 20V | 20V | 1.5V | 1.3W Ta | 5.4A | 20A | N-Channel | 28m Ω @ 5.4A, 4.5V | 1.5V @ 250μA | 5.4A Ta | 11nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7216DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7216dnt1ge3-datasheets-1729.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 39mOhm | 8 | yes | EAR99 | Tin | No | e3 | 2.5W | C BEND | 260 | SI7216 | 8 | 2 | Dual | 30 | 2.5W | 2 | FET General Purpose Power | S-XDSO-C6 | 9 ns | 57ns | 5 ns | 19 ns | 5A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 3V | 20.8W | 5 mJ | 2 N-Channel (Dual) | 670pF @ 20V | 32m Ω @ 5A, 10V | 3V @ 250μA | 6A | 19nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6473DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6473dqt1e3-datasheets-6434.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 1 | Single | 8-TSSOP | 42 ns | 33ns | 95 ns | 220 ns | 6.2A | 8V | 20V | 1.08W Ta | 12.5mOhm | -20V | P-Channel | 12.5mOhm @ 9.5A, 4.5V | 450mV @ 250μA (Min) | 6.2A Ta | 70nC @ 5V | 12.5 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ906E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjq906et1ge3-datasheets-2145.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | 2 | 50W | 175°C | PowerPAK® 8 x 8 Dual | 14 ns | 26 ns | 95A | 20V | 40V | 50W | 2.7mOhm | 40V | 2 N-Channel (Dual) | 3600pF @ 20V | 3.3mOhm @ 5A, 10V | 3.5V @ 250μA | 95A Tc | 42nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5401DC-T1-GE3 | Vishay Siliconix | $0.13 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5401dct1e3-datasheets-8433.pdf | 8-SMD, Flat Lead | 32mOhm | Single | 1.3W | 1206-8 ChipFET™ | 115 ns | 5.2A | 8V | 20V | 1.3W Ta | 32mOhm | 20V | P-Channel | 32mOhm @ 5.2A, 4.5V | 1V @ 250μA | 5.2A Ta | 25nC @ 4.5V | 32 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1025X-T1-GE3 | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1025xt1ge3-datasheets-4065.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | Unknown | 4Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1025 | 3 | Dual | 40 | 250mW | 2 | Other Transistors | -500mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | -2V | 0.19A | -60V | 2 P-Channel (Dual) | 23pF @ 25V | 4 Ω @ 500mA, 10V | 3V @ 250μA | 190mA | 1.7nC @ 15V | Logic Level Gate |
