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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | Number of Outputs | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG271BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg271bdy-datasheets-7712.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 7.5mA | 16 | 547.485991mg | 36V | 13V | 50Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Not Qualified | 65 ns | 65 ns | 22V | 15V | Dual | 7V | -15V | 4 | 50Ohm | 85 dB | 1:1 | SPST - NC | ±15V | 1nA | 8pF 8pF | 65ns, 65ns | -5pC | -100dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP22N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp22n50apbf-datasheets-4479.pdf | 500V | 22A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 230mOhm | 3 | No | 1 | Single | 277W | 1 | TO-247-3 | 3.45nF | 26 ns | 94ns | 47 ns | 47 ns | 22A | 30V | 500V | 4V | 277W Tc | 850 ns | 230mOhm | 500V | N-Channel | 3450pF @ 25V | 2 V | 230mOhm @ 13A, 10V | 4V @ 250μA | 22A Tc | 120nC @ 10V | 230 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG306AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg307aak883-datasheets-7709.pdf | 14-CDIP (0.300, 7.62mm) | 14 | 18 Weeks | 36V | 13V | 50Ohm | 14 | no | No | 2 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | 14 | Multiplexer or Switches | +-15V | 2 | 38535Q/M;38534H;883B | 22V | 7V | -15V | SEPARATE OUTPUT | 50Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 250ns, 150ns | 30pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 600mOhm | 3 | No | 56A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 390pF | 9.5 ns | 29ns | 25 ns | 21 ns | 5.6A | 20V | 100V | -2V | 2.5W Ta 42W Tc | 600mOhm | P-Channel | 390pF @ 25V | -2 V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 1μA | 16 | 8 Weeks | 44V | 4V | 85Ohm | no | unknown | 4 | e0 | TIN LEAD | YES | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | +-15/12V | 4 | Not Qualified | R-PDSO-G16 | 300 ns | 200 ns | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | 150ns | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7106DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7106dnt1e3-datasheets-6905.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 14 Weeks | Unknown | 6.2mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 25 ns | 15ns | 15 ns | 50 ns | 19.5A | 12V | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 60A | 45 mJ | 20V | N-Channel | 6.2m Ω @ 19.5A, 4.5V | 1.5V @ 250μA | 12.5A Ta | 27nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406BDN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 12V | 500μA | 28 | 1.182714g | 36V | 7.5V | 60Ohm | 28 | no | unknown | 1 | e0 | TIN LEAD | 450mW | QUAD | J BEND | 240 | 15V | 28 | 16 | SINGLE-ENDED MULTIPLEXER | 30 | 450mW | Multiplexer or Switches | 1 | Not Qualified | 125 ns | 94 ns | 20V | 148 ns | Dual, Single | 5V | -15V | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 0.03A | 16:1 | ±5V~20V | 500pA | 6pF 108pF | 107ns, 88ns | 11pC | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irfd9014pbf-datasheets-8922.pdf | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | No SVHC | 500mOhm | 4 | 2.54mm | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 270pF | 11 ns | 63ns | 63 ns | 10 ns | 1.1A | 20V | -60V | 60V | 7.62 mm | -4V | 1.3W Ta | 500mOhm | 60V | P-Channel | 270pF @ 25V | -4 V | 500mOhm @ 660mA, 10V | 4V @ 250μA | 1.1A Ta | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407BDN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 1.182714g | 36V | 7.5V | 60Ohm | 28 | no | unknown | 1 | e0 | TIN LEAD | 450mW | QUAD | J BEND | 240 | 15V | 28 | 8 | DIFFERENTIAL MULTIPLEXER | 30 | 450mW | Multiplexer or Switches | 2 | Not Qualified | 125 ns | 94 ns | 20V | 148 ns | Dual, Single | 5V | -15V | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 6pF 54pF | 107ns, 88ns | 11pC | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFRC20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 4.4Ohm | 3 | Tin | No | 1 | Single | 2.5W | 1 | D-Pak | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | 600V | 4V | 2.5W Ta 42W Tc | 580 ns | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 4 V | 4.4Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg409dj-datasheets-7506.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500μA | 16 | 6 Weeks | 547.485991mg | 36V | 5V | 100Ohm | 16 | no | No | 2 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 16 | 4 | DIFFERENTIAL MULTIPLEXER | 30 | 600mW | Multiplexer or Switches | 2 | 150 ns | 150 ns | 20V | 15V | Dual, Single | 5V | -15V | 8 | 100Ohm | 75 dB | 15Ohm | BREAK-BEFORE-MAKE | 5V~36V ±5V~20V | 4:1 | SP4T | 500pA | 14pF 25pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF630PBF | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf630pbf-datasheets-0717.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 400mOhm | 3 | No | 1 | Single | 74W | 1 | TO-220AB | 800pF | 9.4 ns | 28ns | 20 ns | 39 ns | 9A | 20V | 200V | 4V | 74W Tc | 400mOhm | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407DW | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-SOIC (0.295, 7.50mm Width) | 17.91mm | 2.34mm | 7.49mm | 15V | 500μA | 8 Weeks | 792.000628mg | Unknown | 44V | 7.5V | 100Ohm | 28 | No | 50μA | 450mW | 2 | 450mW | 2 | 28-SOIC | 600 ns | 300 ns | 20V | 350 ns | Dual, Single | 5V | 2 | 16 | 100Ohm | 100Ohm | 12V ±5V~20V | 8:1 | 500pA | 8pF 65pF | 200ns, 150ns | 15pC | 5Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3469DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3469dvt1e3-datasheets-3277.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.14W | 1 | Other Transistors | 10 ns | 12ns | 35 ns | 50 ns | -6.7A | 20V | SILICON | SWITCHING | -1V | 1.14W Ta | 5A | 0.03Ohm | -20V | P-Channel | -1 V | 30m Ω @ 6.7A, 10V | 3V @ 250μA | 5A Ta | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2005 | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 1.627801g | 12V | 2.7V | 17Ohm | 16 | 900mW | 4 | 16-DIP | 280MHz | 85 ns | 60 ns | 6V | Dual, Single | 3V | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA52DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira52dpt1ge3-datasheets-3644.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60A | 40V | 48W Tc | N-Channel | 7150pF @ 20V | 1.7m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 150nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 547.485991mg | 44V | 13V | 35Ohm | 16 | no | No | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS02DN-T1-GE3 | Vishay Siliconix | $1.07 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss02dnt1ge3-datasheets-3812.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 25V | 5W Ta 65.7W Tc | N-Channel | 4450pF @ 10V | 1.2mOhm @ 15A, 10V | 2.2V @ 250μA | 51A Ta 80A Tc | 83nC @ 10V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG611EEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg612eent1ge4-datasheets-7435.pdf | 16-UFQFN | 16 Weeks | 4 | 16-miniQFN (1.8x2.6) | 1GHz | 115Ohm | 3V~12V ±3V~5V | 1:1 | SPST - NC | 100pA | 3pF 3pF | 50ns, 35ns | 1.4pC | 2.5Ohm | -74dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7190ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7190adpt1re3-datasheets-4301.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 250V | 5W Ta 56.8W Tc | N-Channel | 860pF @ 100V | 102mOhm @ 4.3A, 10V | 4V @ 250μA | 4.3A Ta 14.4A Tc | 22.4nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG636EEQ-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg636eeqt1ge4-datasheets-9176.pdf | 14-TSSOP (0.173, 4.40mm Width) | 5mm | 14 | 16 Weeks | 2 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 0.65mm | 1 | NOT SPECIFIED | 2 | R-PDSO-G14 | 700MHz | -5V | 96Ohm | 63 dB | 0.3Ohm | 61ns | 58ns | 3V~16V ±3V~8V | 2:1 | SPDT | 500pA | 3.7pF 4.4pF | 56ns, 61ns | -0.33pC | 2 Ω | -62dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR104DP-T1-RE3 | Vishay Siliconix | $1.77 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir104dpt1re3-datasheets-4763.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 5.4W Ta 100W Tc | N-Channel | 4230pF @ 50V | 6.4mOhm @ 15A, 10V | 3.5V @ 250μA | 18.3A Ta 79A Tc | 84nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9234EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.1mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9233edyge3-datasheets-1801.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 3mm | 8 | 19 Weeks | 2 | YES | DUAL | GULL WING | NOT SPECIFIED | 3V | 0.65mm | 5.5V | 1 | NOT SPECIFIED | 2 | S-PDSO-G8 | 25Ohm | 1:1 | 2.7V~5.5V | SPST - NO/NC | 100pA | 3.8pF | 75ns, 50ns | -0.78pC | 400m Ω | -108dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9214PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9214trpbf-datasheets-8548.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 3Ohm | 3 | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 50W | 1 | 11 ns | 14ns | 17 ns | 20 ns | 2.7A | 20V | SILICON | DRAIN | SWITCHING | 250V | -4V | 50W Tc | -250V | P-Channel | 220pF @ 25V | -4 V | 3 Ω @ 1.7A, 10V | 4V @ 250μA | 2.7A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG300BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 230μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-DIP (0.300, 7.62mm) | 15V | Lead Free | 1mA | 10 Weeks | 1.620005g | Unknown | 36V | 13V | 30Ohm | 14 | yes | No | 230μA | 470mW | DG300 | 14 | 470mW | SPST | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 2 | 50Ohm | 50Ohm | 1:1 | SPST - NO | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | -60V | -8.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 280mOhm | 3 | No | 1 | Single | 42W | 1 | D-Pak | 570pF | 13 ns | 68ns | 29 ns | 15 ns | -8.8A | 20V | 60V | -4V | 2.5W Ta 42W Tc | 200 ns | 280mOhm | -60V | P-Channel | 570pF @ 25V | 280mOhm @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418BAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2014 | 8-CDIP (0.300, 7.62mm) | 25Ohm | 1 | 8-CERDIP | 25Ohm | 12V ±15V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfz48spbf-datasheets-5795.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | 3 | No | D2PAK | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | 60V | 3.7W Ta 190W Tc | N-Channel | 2400pF @ 25V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 20V | 1μA | 8 | 8 Weeks | 930.006106mg | 36V | 13V | 25Ohm | 8 | no | unknown | 4 | e0 | TIN LEAD | NO | 400mW | NOT SPECIFIED | 15V | 2.54mm | 8 | 1 | NOT SPECIFIED | Multiplexer or Switches | 1 | Not Qualified | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 25Ohm | 35Ohm | 82 dB | BREAK-BEFORE-MAKE | NO/NC | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp15n65ege3-datasheets-5997.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 34W | 1 | 24ns | 25 ns | 48 ns | 15A | 4V | SILICON | SWITCHING | 34W Tc | TO-220AB | 0.28Ohm | 286 mJ | 650V | N-Channel | 1640pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V |
