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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Max Frequency | Nominal Input Voltage | Current | Manufacturer Package Identifier | Number of Functions | Power Rating | Voltage - Input (Max) | Max Input Voltage | JESD-609 Code | Feature | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Min Input Voltage | Output Voltage | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Function | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Max Output Power | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Input Voltage-Nom | Input Voltage (Min) | Input Voltage (Max) | Power Dissipation-Max | JEDEC-95 Code | Topology | Synchronous Rectifier | Max Duty Cycle | Clock Sync | Duty Cycle | Efficiency | Control Mode | Control Technique | Switcher Configuration | Voltage - Output (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Voltage - Input (Min) | Avalanche Energy Rating (Eas) | Control Features | Current - Output | Voltage - Output (Min/Fixed) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Frequency - Switching | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHW23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw23n60ege3-datasheets-0102.pdf | TO-247-3 | 3 | 19 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 227W Tc | TO-247AD | 650V | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4427BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4427bdyt1e3-datasheets-7261.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 10.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 12 ns | 15ns | 15 ns | 242 ns | -12.6A | 12V | SILICON | 30V | -1.4V | 1.5W Ta | 9.7A | -30V | P-Channel | 10.5m Ω @ 12.6A, 10V | 1.4V @ 250μA | 9.7A Ta | 70nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5429DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5429dut1ge3-datasheets-8656.pdf | PowerPAK® ChipFET™ Dual | 3.08mm | 850μm | 1.98mm | No SVHC | 8 | EAR99 | No | 31W | Single | 31W | 1 | 35 ns | 50ns | 20 ns | 60 ns | 12A | 20V | 30V | -1V | -30V | P-Channel | 2320pF @ 15V | 15m Ω @ 7A, 10V | 2.2V @ 250μA | 12A Tc | 63nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ422EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj422ept1ge3-datasheets-8138.pdf | PowerPAK® SO-8 | Lead Free | 12 Weeks | Unknown | 6 | EAR99 | No | 1 | Single | 83W | 13 ns | 10ns | 8 ns | 29 ns | 75A | 20V | 40V | 2V | 83W Tc | N-Channel | 4660pF @ 20V | 3.4m Ω @ 18A, 10V | 2.5V @ 250μA | 74A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS436DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis436dnt1ge3-datasheets-9936.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 13 Weeks | 4.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 15 ns | 12ns | 10 ns | 15 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 3.5W Ta 27.7W Tc | 32A | N-Channel | 855pF @ 10V | 10.5m Ω @ 10A, 10V | 2.3V @ 250μA | 16A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR876ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir876adpt1ge3-datasheets-8974.pdf | PowerPAK® SO-8 | 1.17mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14.5MOhm | 8 | EAR99 | No | S17-0173-Single | DUAL | C BEND | 8 | 1 | Single | 5W | 1 | FET General Purpose Power | 150°C | R-PDSO-C5 | 11 ns | 16ns | 16 ns | 28 ns | 15.2A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 5W Ta 62.5W Tc | 40A | 100V | N-Channel | 1630pF @ 50V | 10.8m Ω @ 20A, 10V | 2.8V @ 250μA | 40A Tc | 49nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA444DJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sia444djtt1ge3-datasheets-2722.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 15 Weeks | Unknown | 6 | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | FET General Purpose Power | S-PDSO-N3 | 12 ns | 12ns | 10 ns | 15 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1V | 3.5W Ta 19W Tc | 40A | N-Channel | 560pF @ 15V | 17m Ω @ 7.4A, 10V | 2.2V @ 250μA | 12A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD23N06-31-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud23n0631ge3-datasheets-2119.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 31mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | 4 | 1 | Single | 30 | 5.7W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 250ns | 68 ns | 35 ns | 9.1A | 20V | SILICON | DRAIN | SWITCHING | 3V | 5.7W Ta 31.25W Tc | 50A | 20 mJ | 60V | N-Channel | 670pF @ 25V | 31m Ω @ 15A, 10V | 3V @ 250μA | 21.4A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR798DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/vishaysiliconix-sir798dpt1ge3-datasheets-4673.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | EAR99 | Tin | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-C5 | 17 ns | 11ns | 9 ns | 43 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1V | 83W Tc | 0.00205Ohm | N-Channel | 5050pF @ 15V | 2.05 Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 130nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2365EDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2365edst1ge3-datasheets-4458.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1W | 1 | Other Transistors | 150°C | 9 ns | 32μs | 21 μs | 65 ns | -4.5A | 8V | SILICON | SWITCHING | 20V | -1V | 1W Ta 1.7W Tc | 5.9A | -20V | P-Channel | 32m Ω @ 4A, 4.5V | 1V @ 250μA | 5.9A Tc | 36nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32509DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32509dtt1ge3-datasheets-8606.pdf | SOT-23-6 Thin, TSOT-23-6 | 20 Weeks | Unknown | 54mOhm | 6 | On/Off | No | 5.5V | Slew Rate Controlled | 833mW | SPST | 3A | N-Channel | 1.1V~5.5V | 1.8 ms | 1 μs | 1 | General Purpose | High Side | Reverse Current | Not Required | 46m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2315BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si2315bdst1e3-datasheets-6333.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 50mOhm | 3 | yes | EAR99 | No | 3A | e3 | Matte Tin (Sn) | 12V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 150°C | 15 ns | 35ns | 35 ns | 50 ns | -3A | 8V | -12V | SILICON | -900mV | 750mW Ta | -12V | P-Channel | 715pF @ 6V | -900 mV | 50m Ω @ 3.85A, 4.5V | 900mV @ 250μA | 3A Ta | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32462DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32462dbt2ge1-datasheets-3105.pdf | 4-UFBGA, CSPBGA | 20 Weeks | Unknown | 150mOhm | 4 | On/Off | No | 5.5V | Slew Rate Controlled | 300mW | SIP32462 | SPST | 1.2A | N-Channel | 1.2V~5.5V | 20 μs | 2 μs | 1 | General Purpose | High Side | Reverse Current | Not Required | 50m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2374DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si2374dst1ge3-datasheets-0206.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | 30 | 960mW | 1 | 150°C | 10 ns | 22ns | 9 ns | 16 ns | 4.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 960mW Ta 1.7W Tc | 5.9A | 20V | N-Channel | 735pF @ 10V | 30m Ω @ 4A, 4.5V | 1V @ 250μA | 4.5A Ta 5.9A Tc | 20nC @ 10V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32454DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | MICRO FOOT® | Surface Mount | Surface Mount | -40°C~125°C TJ | Digi-Reel® | 1 (Unlimited) | 85°C | -40°C | Non-Inverting | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sip32454dbt2ge1-datasheets-4013.pdf | 4-UFBGA, CSPBGA | 800μm | 545μm | 800μm | 20 Weeks | Unknown | 2.5V | 800mV | 35mOhm | 4 | On/Off | 2.5V | 1.2A | 196mW | Load Discharge, Slew Rate Controlled | 2.5V | 196mW | SIP32454 | 4-WCSP (0.76x0.76) | 1.2A | N-Channel | 0.8V~2.5V | 1.2 ms | 1 μs | 1 | General Purpose | High Side | Reverse Current | 1.2A | Not Required | 28mOhm | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ208EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj208ept1ge3-datasheets-1883.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual Asymmetric | 40V | 27W Tc 48W Tc | 2 N-Channel (Dual) | 1700pF 3900pF @ 25V | 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V | 2.3V @ 250μA, 2.4V @ 250μA | 20A Tc 60A Tc | 33nC, 75nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9706DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si9706dye3-datasheets-0073.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.9mm | Lead Free | 8 | 142.994995mg | yes | No | 1 | e3 | Slew Rate Controlled | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3.3V | SI9706 | 8 | 3.6V | 3V | ANALOG CIRCUIT | 40 | Power Management Circuits | 3.3/5V | R-PDSO-G8 | 3.3V 5V | 1 | PCMCIA Switch | High Side | 2A | 70MOhm | Not Required | 2:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3951DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3951dvt1ge3-datasheets-3040.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 21 Weeks | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.14W | GULL WING | 260 | SI3951 | 6 | Dual | 30 | 2 | Other Transistors | 9 ns | 30ns | 16 ns | 32 ns | -2.7A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | -1.5V | 2W | 10A | 0.115Ohm | -20V | 2 P-Channel (Dual) | 250pF @ 10V | 115m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 2.7A | 5.1nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32401DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | Non-Inverting | ROHS3 Compliant | 2017 | 4-UFDFN Exposed Pad | 12 Weeks | 4 | On/Off | No | Slew Rate Controlled | 324mW | 4-TDFN (1.2x1.6) | 2.4A | N-Channel | 1.1V~5.5V | 1 | General Purpose | High Side | 2.4A | Not Required | 62mOhm | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3911DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3911dvt1e3-datasheets-4367.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 145mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | 260 | SI3911 | 6 | Dual | 40 | 830mW | 2 | Other Transistors | 12 ns | 29ns | 29 ns | 24 ns | -2.2A | 8V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.8A | 2 P-Channel (Dual) | 145m Ω @ 2.2A, 4.5V | 450mV @ 250μA (Min) | 1.8A | 7.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP12117DMP-T1-GE4 | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip12117dmpt1ge4-datasheets-7345.pdf | 10-VFDFN Exposed Pad | Lead Free | 15 Weeks | EAR99 | 15V | NOT SPECIFIED | SWITCHING REGULATOR | NOT SPECIFIED | Adjustable | Step-Down | 1 | Positive | Buck | Yes | 5.5V | 4.5V | 3A | 0.6V | 600kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4388DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4388dyt1e3-datasheets-4448.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.5W | DUAL | FLAT | 260 | SI4388 | 8 | 2 | 40 | 2 | FET General Purpose Power | 14 ns | 15ns | 15 ns | 40 ns | 8.1A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 3.3W 3.5W | 11.3A | 40A | 30V | 2 N-Channel (Half Bridge) | 946pF @ 15V | 16m Ω @ 8A, 10V | 3V @ 250μA | 10.7A 11.3A | 27nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC466ED-T1-GE3 | Vishay Siliconix | $4.91 |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic469edt1ge3-datasheets-4516.pdf | PowerPAK® MLP55-27 | 16 Weeks | 60V | PowerPAK® MLP55-27 | Adjustable | Step-Down | 1 | Positive | Buck | Yes | 55.2V | 4.5V | 10A | 0.8V | 100kHz~2MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1025X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1025xt1ge3-datasheets-4065.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 32.006612mg | No SVHC | 4Ohm | 6 | No | 250mW | SI1025 | 2 | Dual | 250mW | 2 | SC-89-6 | 23pF | 500mA | 20V | 60V | -3V | 250mW | 8Ohm | -60V | 2 P-Channel (Dual) | 23pF @ 25V | 4Ohm @ 500mA, 10V | 3V @ 250μA | 190mA | 1.7nC @ 15V | Logic Level Gate | 4 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9104DW-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9104dwt1e3-datasheets-5210.pdf | 16-SOIC (0.295, 7.50mm Width) | 13.5V | 473.692182mg | 16 | No | 120V | 120V | SI9104 | 16-SOIC | 10V | 4V | 150μA | Fixed | Step-Up/Step-Down | 1 | 3W | Positive, Isolation Capable | Flyback, Forward Converter | No | 80 % | 10V | 40kHz~1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5515DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5515dct1e3-datasheets-4608.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 84.99187mg | Unknown | 40mOhm | 8 | No | 1.1W | SI5515 | 2 | 1.1W | 2 | 1206-8 ChipFET™ | 18 ns | 32ns | 32 ns | 42 ns | 4.4A | 8V | 20V | 400mV | 1.1W | 69mOhm | N and P-Channel | 400 mV | 40mOhm @ 4.4A, 4.5V | 1V @ 250μA | 4.4A 3A | 7.5nC @ 4.5V | Logic Level Gate | 40 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9114ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BCDMOS | 3mA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si9114adyt1e3-datasheets-9826.pdf | 14-SOIC (0.154, 3.90mm Width) | 8.65mm | 3.9mm | Lead Free | 3mA | 14 | 240.999296mg | 14 | yes | EAR99 | 2MHz | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | SI9114 | SWITCHING CONTROLLER | 40 | Switching Regulator or Controllers | 10V | 700mA | Transistor Driver | 60ns | 40 ns | Step-Up/Step-Down | 1 | Positive, Isolation Capable | 48V | 200V | Flyback, Forward Converter | No | 50 % | Yes | CURRENT-MODE | PULSE WIDTH MODULATION | SINGLE | Enable, Soft Start | 9.5V~16.5V | 20kHz~2MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6993DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6993dqt1e3-datasheets-4694.pdf | 8-TSSOP (0.173, 4.40mm Width) | 4.4958mm | 1.0414mm | 3.0988mm | Lead Free | 8 | Unknown | 31mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | 260 | SI6993 | 8 | Dual | 40 | 830mW | 2 | Other Transistors | 13 ns | 14ns | 14 ns | 52 ns | -4.7A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1V | 3.6A | 30V | 2 P-Channel (Dual) | -1 V | 31m Ω @ 4.7A, 10V | 3V @ 250μA | 3.6A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9112DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BCDMOS | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si9112dyt1e3-datasheets-9812.pdf | 14-SOIC (0.154, 3.90mm Width) | 8.65mm | 3.9mm | Lead Free | 14 | 338.011364mg | 14 | yes | EAR99 | 3MHz | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | SI9112 | SWITCHING CONTROLLER | 40 | Switching Regulator or Controllers | 150μA | 8.7V | 10mA | Transistor Driver | 40ns | 40 ns | Step-Up/Step-Down | 1 | Positive | 12V | 9V | 80V | Cuk, Flyback, Forward Converter, Push-Pull | No | 50 % | 50 % | CURRENT-MODE | PULSE WIDTH MODULATION | SINGLE | Enable, Reset | 9V~13.5V | 40kHz~1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4916DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4916dyt1e3-datasheets-4536.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.5W | DUAL | FLAT | 260 | SI4916 | 8 | 2 | 30 | 2 | FET General Purpose Power | 9 ns | 13ns | 13 ns | 27 ns | 7.5A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 3.3W 3.5W | 10.5A | 40A | 30V | 2 N-Channel (Half Bridge) | 18m Ω @ 10A, 10V | 3V @ 250μA | 10A 10.5A | 10nC @ 4.5V | Logic Level Gate |
