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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | Number of Functions | Voltage - Input (Max) | JESD-609 Code | Feature | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Voltage | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Input Voltage-Nom | Power Dissipation-Max | Recovery Time | Built-in Protections | Driver Number of Bits | Topology | Synchronous Rectifier | Voltage - Output (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Voltage - Input (Min) | Avalanche Energy Rating (Eas) | Current - Output | Voltage - Output (Min/Fixed) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Frequency - Switching | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIR662DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir662dpt1ge3-datasheets-0189.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.7mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 1V | 6.25W Ta 104W Tc | N-Channel | 4365pF @ 30V | 1 V | 2.7m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 96nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTXL02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLD024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irld024pbf-datasheets-1254.pdf | 60V | 2.5A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | Unknown | 100mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 870pF | 11 ns | 110ns | 110 ns | 23 ns | 2.5A | 10V | 60V | 2V | 1.3W Ta | 260 ns | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 1.5A, 5V | 2V @ 250μA | 2.5A Ta | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3N164 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-3n1632-datasheets-9363.pdf | TO-206AF, TO-72-4 Metal Can | 4 | no | Lead, Tin | unknown | e0 | Tin/Lead (Sn/Pb) | 8 | Single | 375mW | 1 | Other Transistors | 5 ns | 13ns | 25 ns | -50mA | 30V | 375mW Ta | 0.05A | -30V | P-Channel | 3.5pF @ 15V | 300 Ω @ 100μA, 20V | 5V @ 10μA | 50mA Ta | 20V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ469EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj469ept1ge3-datasheets-2127.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 100W | 1 | 175°C | PowerPAK® SO-8 | 5.1nF | 16 ns | 16ns | 40 ns | 150 ns | -32A | 20V | 80V | -2V | 100W Tc | 45mOhm | -80V | P-Channel | 5100pF @ 40V | -2 V | 25mOhm @ 10.2A, 10V | 2.5V @ 250μA | 32A Tc | 155nC @ 10V | 25 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP0808B | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | -280mA | TO-205AD, TO-39-3 Metal Can | 9 Weeks | 3 | No | e0 | Tin/Lead (Sn/Pb) | 2 | 1 | Single | 800mW | Other Transistors | 11 ns | 30ns | 20 ns | 20 ns | 880mA | 30V | 80V | 6.25W Ta | -80V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7460DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7460dpt1ge3-datasheets-4772.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 9.6MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 20 ns | 16ns | 16 ns | 75 ns | 11A | 20V | 60V | SILICON | DRAIN | SWITCHING | 1V | 1.9W Ta | 40A | 60V | N-Channel | 1 V | 9.6m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTVP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | 10 pF | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7465DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7465dpt1e3-datasheets-7224.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 64mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 8 ns | 9ns | 9 ns | 65 ns | -5A | 20V | SILICON | DRAIN | 60V | -3V | 1.5W Ta | 3.2A | 25A | 24.2 mJ | -60V | P-Channel | 64m Ω @ 5A, 10V | 3V @ 250μA | 3.2A Ta | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB408DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib408dkt1ge3-datasheets-9779.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | Lead Free | 3 | 15 Weeks | 95.991485mg | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | 40 | 2.4W | 1 | FET General Purpose Power | R-PDSO-N3 | 13 ns | 11ns | 9 ns | 13 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 6A | 20A | 0.04Ohm | 5 mJ | 30V | N-Channel | 350pF @ 15V | 40m Ω @ 6A, 10V | 2.5V @ 250μA | 7A Tc | 9.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS443DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis443dnt1ge3-datasheets-8385.pdf | PowerPAK® 1212-8 | 1.1684mm | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | C BEND | 1 | 3.7W | 1 | 150°C | S-PDSO-C5 | 12 ns | 10ns | 10 ns | 48 ns | -13.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | -1V | 3.7W Ta 52W Tc | 0.035A | -40V | P-Channel | 4370pF @ 20V | 11.7m Ω @ 15A, 10V | 2.3V @ 250μA | 35A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM120N04-1M7L-GE3 | Vishay Siliconix | $1.51 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum120n041m7lge3-datasheets-2065.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | EAR99 | unknown | SINGLE | GULL WING | 1 | R-PSSO-G2 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 375W Tc | 480A | 0.0017Ohm | 423 mJ | N-Channel | 11685pF @ 20V | 17m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 285nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7852ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7852adpt1ge3-datasheets-9431.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 17MOhm | 8 | yes | EAR99 | No | S17-0173_SINGLE | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 16 ns | 9ns | 9 ns | 26 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 5W Ta 62.5W Tc | 60A | 45 mJ | 80V | N-Channel | 1825pF @ 40V | 17m Ω @ 10A, 10V | 4.5V @ 250μA | 30A Tc | 45nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4010DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4010dyt1ge3-datasheets-3123.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 3.4mOhm | 8-SO | 30V | 6W Tc | N-Channel | 3595pF @ 15V | 3.4mOhm @ 15A, 10V | 2.3V @ 250μA | 31.3A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS410DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis410dnt1ge3-datasheets-2517.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 4.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 8 | Single | 5.2W | 1 | FET General Purpose Power | S-PDSO-C5 | 25 ns | 15ns | 15 ns | 30 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.8W Ta 52W Tc | 22A | 60A | N-Channel | 1600pF @ 10V | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7794DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® Gen III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7794dpt1ge3-datasheets-5030.pdf | PowerPAK® SO-8 | 5 | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 5W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 10ns | 10 ns | 30 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 5W Ta 48W Tc | 0.0034Ohm | N-Channel | 2.52nF @ 15V | 3.4m Ω @ 20A, 10V | 2.5V @ 250μA | 28.6A Ta 60A Tc | 72nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1012CR-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1012crt1ge3-datasheets-5114.pdf | SC-75, SOT-416 | 1.68mm | 800μm | 860μm | Lead Free | 3 | 14 Weeks | 2.012816mg | No SVHC | 396mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 240mW | 1 | 150°C | 11 ns | 16ns | 11 ns | 26 ns | 630mA | 8V | SILICON | SWITCHING | 400mV | 240mW Ta | 20V | N-Channel | 43pF @ 10V | 396m Ω @ 600mA, 4.5V | 1V @ 250μA | 2nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32416DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Digi-Reel® | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sip32416dnpt1ge4-datasheets-6370.pdf | 8-UFDFN Exposed Pad | 8 | 14 Weeks | 50.008559mg | Unknown | 76mOhm | 8 | On/Off | EAR99 | 5.5V | 1 | Load Discharge, Slew Rate Controlled | 580mW | DUAL | NO LEAD | NOT SPECIFIED | 0.5mm | SIP32416 | 8 | DUAL SWITCHING CONTROLLER | NOT SPECIFIED | 580mW | 2.4A | 5V | 2A | N-Channel | 1.1V~5.5V | 3.8 ms | 1 μs | 2 | General Purpose | High Side | Reverse Current | 5V | Not Required | 62m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2312BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2312bdst1e3-datasheets-6507.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 31mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 9 ns | 30ns | 10 ns | 35 ns | 5A | 8V | 20V | SILICON | SWITCHING | 850mV | 750mW Ta | 20V | N-Channel | 450 mV | 31m Ω @ 5A, 4.5V | 850mV @ 250μA | 3.9A Ta | 12nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32441DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | Non-RoHS Compliant | /files/vishaysiliconix-sip32441dnpt1ge4-datasheets-4020.pdf | 4-UDFN Exposed Pad | 16 Weeks | On/Off | EAR99 | unknown | e4 | Slew Rate Controlled | Palladium/Gold (Pd/Au) | 260 | 30 | N-Channel | 1.7V~5.5V | 1 | General Purpose | High Side | Reverse Current, UVLO | 3A | Not Required | 38m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP0610K-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-tp0610kt1e3-datasheets-5432.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 1.437803g | Unknown | 3 | No | 1 | Single | 350mW | 1 | SOT-23-3 (TO-236) | 155pF | 20 ns | 35 ns | -185mA | 20V | 60V | -2V | 350mW Ta | 10Ohm | -60V | P-Channel | 23pF @ 25V | -1 V | 6Ohm @ 500mA, 10V | 3V @ 250μA | 185mA Ta | 1.7nC @ 15V | 190 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32431DNP3-T1GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32431dr3t1ge3-datasheets-2669.pdf | 4-UFDFN Exposed Pad | 600μm | Lead Free | 4 | 16 Weeks | 50.008559mg | 520mOhm | 4 | On/Off | EAR99 | No | 5.5V | 1 | Slew Rate Controlled | 324mW | DUAL | 5V | 0.5mm | SIP32431 | 4 | 324mW | Peripheral Drivers | 2/5V | 125°C | 1.4A | 1A | P-Channel | 1.5V~5.5V | 20 μs | 140μs | 4 μs | 1 | General Purpose | High Side | Reverse Current | TRANSIENT; THERMAL | 1 | Not Required | 105m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISF04DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf04dnt1ge3-datasheets-1910.pdf | PowerPAK® 1212-8SCD | PowerPAK® 1212-8SCD | 30V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2600pF @ 15V | 4mOhm @ 7A, 10V | 2.3V @ 250μA | 30A Ta 108A Tc | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3865CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3865cdvt1ge3-datasheets-0081.pdf | SOT-23-6 Thin, TSOT-23-6 | 15 Weeks | Unknown | 6 | On/Off | No | Slew Rate Controlled | 830mW | SI3865 | Dual | 830mW | 6-TSOP | 1A | P-Channel | 1.8V~12V | 2.8A | 12V | 1 | General Purpose | High Side | 2.8A | 60mOhm | 8V | 50mOhm | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1026X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1026xt1ge3-datasheets-4252.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 32.006612mg | 3Ohm | 6 | 250mW | SI1026 | 2 | Dual | 250mW | 2 | SC-89-6 | 30pF | 500mA | 20V | 60V | 250mW | 3Ohm | 60V | 2 N-Channel (Dual) | 30pF @ 25V | 1.4Ohm @ 500mA, 10V | 2.5V @ 250μA | 305mA | 0.6nC @ 4.5V | Logic Level Gate | 1.4 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32413DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sip32416dnpt1ge4-datasheets-6370.pdf | 8-UFDFN Exposed Pad | 8 | 14 Weeks | 50.008559mg | Unknown | 76mOhm | 8 | On/Off | yes | EAR99 | No | 5.5V | 1 | e4 | Slew Rate Controlled | PALLADIUM GOLD OVER NICKEL | 580mW | DUAL | 260 | 0.5mm | SIP32413 | 8 | DUAL SWITCHING CONTROLLER | 30 | 580mW | 2.4A | 5V | 2A | N-Channel | 1.1V~5.5V | 210 μs | 1 μs | 2 | General Purpose | High Side | Reverse Current | 5V | Not Required | 62m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1905DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1905dlt1e3-datasheets-4352.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | Unknown | 600mOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | 270mW | GULL WING | 260 | SI1905 | 6 | Dual | 20 | 270mW | 2 | 6 ns | 25ns | 25 ns | 10 ns | 570mA | 8V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.57A | 8V | 2 P-Channel (Dual) | -450 mV | 600m Ω @ 570mA, 4.5V | 450mV @ 250μA (Min) | 2.3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC472ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic473edt1ge3-datasheets-5997.pdf | PowerPAK® MLP55-27 | 16 Weeks | 55V | PowerPAK® MLP55-27 | 50.6V | Adjustable | Step-Down | 1 | Positive | Buck | Yes | 50.6V | 4.5V | 8A | 0.8V | 20kHz~2MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4563DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4563dyt1e3-datasheets-4444.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | Unknown | 25mOhm | 8 | EAR99 | Tin | e3 | 2W | DUAL | GULL WING | 260 | SI4563 | 8 | 2 | 40 | 2W | 2 | Not Qualified | 33 ns | 93ns | 69 ns | 80 ns | 8A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 2V | 3.25W | 8A | N and P-Channel | 2390pF @ 20V | 16m Ω @ 5A, 10V | 2V @ 250μA | 85nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP12110DMP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip12110dmpt1ge4-datasheets-9107.pdf | 16-VFQFN Exposed Pad | 16 Weeks | EAR99 | unknown | 15V | NOT SPECIFIED | SWITCHING REGULATOR | NOT SPECIFIED | Adjustable | Step-Down | 1 | Positive | Buck | Yes | 5.5V | 4.5V | 6A | 0.6V | 400kHz~1MHz |
