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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG202BDK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 16-CDIP (0.300, 7.62mm) | 16 | 14 Weeks | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 16 | Multiplexer or Switches | 12/+-15V | 4 | 22V | 4.5V | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | 300ns | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ24PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irlz24pbf-datasheets-1461.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 100mOhm | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 3 | 1 | Single | 60W | 1 | FET General Purpose Power | 11 ns | 110ns | 41 ns | 23 ns | 17A | 10V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2V | 60W Tc | TO-220AB | 68A | N-Channel | 870pF @ 25V | 2 V | 100m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 18nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG212BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | /files/vishaysiliconix-dg212bdyt1-datasheets-7664.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 10μA | 16 | 1.627801g | No SVHC | 25V | 4.5V | 85Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 16 | 470mW | Multiplexer or Switches | 512/+-15V | Not Qualified | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL620PBF | Vishay Siliconix | $6.45 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl620pbf-datasheets-2361.pdf | 200V | 5.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 800mOhm | 3 | Tin | No | 1 | Single | 50W | 1 | TO-220AB | 360pF | 4.2 ns | 31ns | 17 ns | 18 ns | 5.2A | 10V | 200V | 2V | 50W Tc | 800mOhm | 200V | N-Channel | 360pF @ 25V | 2 V | 800mOhm @ 3.1A, 5V | 2V @ 250μA | 5.2A Tc | 16nC @ 5V | 800 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg445dy-datasheets-7564.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 1μA | 16 | 8 Weeks | 1.627801g | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | 1μA | e0 | Tin/Lead (Sn/Pb) | 450mW | 16 | 4 | 450mW | Multiplexer or Switches | 512/+-15V | Not Qualified | SPST | 250 ns | 140 ns | 22V | 20V | Dual, Single | 7V | SEPARATE OUTPUT | 85Ohm | 50Ohm | BREAK-BEFORE-MAKE | NC | 5V~36V ±5V~20V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 250ns, 140ns | -1pC | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP25N40D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp25n40dge3-datasheets-3763.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 278W | 1 | FET General Purpose Powers | 21 ns | 57ns | 37 ns | 40 ns | 25A | 30V | SILICON | SWITCHING | 3V | 278W Tc | TO-220AB | 78A | 556 mJ | 400V | N-Channel | 1707pF @ 100V | 170m Ω @ 13A, 10V | 5V @ 250μA | 25A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG307AAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg307aak883-datasheets-7709.pdf | 14-CDIP (0.300, 7.62mm) | 15V | 10μA | 14 | 14 Weeks | 36V | 13V | 50Ohm | 14 | no | No | 2 | 1nA | e0 | Tin/Lead (Sn/Pb) | 825mW | 15V | 14 | 825mW | Multiplexer or Switches | 2 | 250 ns | 150 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 50Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 14pF 14pF | 250ns, 150ns | 30pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA421DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia421djt1ge3-datasheets-4610.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 83MOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N3 | 40 ns | 110ns | 12 ns | 30 ns | -12A | 20V | SILICON | DRAIN | SWITCHING | 30V | -3V | 3.5W Ta 19W Tc | 7.9A | 35A | -30V | P-Channel | 950pF @ 15V | -3 V | 35m Ω @ 5.3A, 10V | 3V @ 250μA | 12A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BDQ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-TSSOP (0.173, 4.40mm Width) | 16 | 44V | 4V | 85Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 15V | 0.635mm | 16 | Multiplexer or Switches | +-15V | 4 | Not Qualified | 22V | 4V | -15V | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | 200ns | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4686DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4686dyt1e3-datasheets-5730.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 9.5mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3W | 1 | FET General Purpose Power | 20 ns | 20ns | 8 ns | 20 ns | 18.2A | 20V | SILICON | SWITCHING | 1V | 3W Ta 5.2W Tc | 30V | N-Channel | 1220pF @ 15V | 9.5m Ω @ 13.8A, 10V | 3V @ 250μA | 18.2A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg401ak-datasheets-7781.pdf | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 15V | 1μA | 14 Weeks | 35Ohm | 16 | 900mW | 2 | 16-CERDIP | 150 ns | 100 ns | 15V | Dual, Single | 35Ohm | 35Ohm | 1:1 | SPST - NO | ±15V | 250pA | 12pF 12pF | 150ns, 100ns | 60pC | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR696DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sir696dpt1ge3-datasheets-6807.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 125V | 104W Tc | N-Channel | 1410pF @ 75V | 11.5m Ω @ 20A, 10V | 4.5V @ 250μA | 60A Tc | 38nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 15V | 10μA | 16 | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | 1nA | e3 | Matte Tin (Sn) | 600mW | GULL WING | NOT SPECIFIED | 15V | 1.27mm | 16 | 1 | NOT SPECIFIED | 600mW | Multiplexer or Switches | Not Qualified | 200 ns | 150 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 78 dB | BREAK-BEFORE-MAKE | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7114DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7114dnt1e3-datasheets-7743.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 45 ns | 18.3A | 20V | SILICON | DRAIN | SWITCHING | 30V | 1V | 1V | 1.5W Ta | 60A | 42 mJ | N-Channel | 1 V | 7.5m Ω @ 18.3A, 10V | 3V @ 250μA | 11.7A Ta | 19nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ADJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-DIP (0.300, 7.62mm) | 26.92mm | 3.81mm | 7.11mm | 200μA | 20 | 8 Weeks | 2.508989g | Unknown | 40V | 5V | 45Ohm | 20 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | NO | 890mW | 20 | 4 | Multiplexer or Switches | 1 | 175 ns | 145 ns | 22V | Dual, Single | 4V | SEPARATE OUTPUT | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR870ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sidr870adpt1ge3-datasheets-9417.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 100V | 125W Tc | N-Channel | 2866pF @ 50V | 6.6m Ω @ 20A, 10V | 3V @ 250μA | 95A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407BDW | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-SOIC (0.295, 7.50mm Width) | 17.91mm | 2.34mm | 7.49mm | 15V | 500μA | 8 Weeks | 792.000628mg | 36V | 7.5V | 60Ohm | 28 | 450mW | 2 | 450mW | 2 | 28-SOIC | 125 ns | 94 ns | 20V | 148 ns | Dual, Single | 5V | 2 | 16 | 60Ohm | 12V ±5V~20V | 8:1 | 500pA | 6pF 54pF | 107ns, 88ns | 11pC | 3Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3453DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3453dvt1ge3-datasheets-1121.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | 1 | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-G6 | 4 ns | 9ns | 7 ns | 11 ns | -3.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3W Tc | P-Channel | 155pF @ 15V | 165m Ω @ 2.5A, 10V | 2.5V @ 250μA | 3.4A Tc | 6.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412HSDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 547.485991mg | 44V | 13V | 35Ohm | 16 | no | No | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NO | 12V ±5V~20V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR124DP-T1-RE3 | Vishay Siliconix | $0.86 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir124dpt1re3-datasheets-3182.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5W Ta 62.5W Tc | N-Channel | 1666pF @ 40V | 8.4mOhm @ 10A, 10V | 3.8V @ 250μA | 16.1A Ta 56.8A Tc | 40nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDQ-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 172.98879mg | 12V | 2.7V | 17Ohm | 16 | no | No | 4 | e0 | TIN LEAD | 450mW | GULL WING | 240 | 5V | 0.65mm | 16 | 1 | 30 | 450mW | Multiplexer or Switches | 3/12/+-5V | 280MHz | 50 ns | 35 ns | 6V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ403EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqj403ept1ge3-datasheets-3682.pdf | PowerPAK® SO-8 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 68W Tc | P-Channel | 4500pF @ 15V | 8.5m Ω @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 109nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406DN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | Lead Free | 500μA | 28 | 10 Weeks | 1.182714g | 44V | 7.5V | 100Ohm | 28 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 450mW | QUAD | J BEND | 28 | 16 | SINGLE-ENDED MULTIPLEXER | 450mW | Multiplexer or Switches | 1 | 600 ns | 300 ns | 20V | 350 ns | Dual, Single | 5V | 16 | 100Ohm | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 16:1 | 500pA | 8pF 130pF | 200ns, 150ns | 15pC | 5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH110DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen II | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sish110dnt1ge3-datasheets-3892.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 20V | 1.5W Ta | N-Channel | 5.3mOhm @ 21.1A, 10V | 2.5V @ 250μA | 13.5A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2032EDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg2032ednt1ge4-datasheets-8934.pdf | 12-VFQFN Exposed Pad | 19 Weeks | unknown | 2 | 221MHz | 3.1Ohm | 2:1 | 1.8V~5.5V | SPDT | 40ns, 33ns | -19.4pC | 10m Ω | -62dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4425BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4425bdyt1e3-datasheets-2582.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | Other Transistors | 15 ns | 13ns | 13 ns | 100 ns | -11.4A | 20V | SILICON | SWITCHING | 30V | 30V | -400mV | 1.5W Ta | P-Channel | 12m Ω @ 11.4A, 10V | 3V @ 250μA | 8.8A Ta | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG604EEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg604eeqt1ge4-datasheets-3696.pdf | 16-UFQFN | 16 Weeks | 2 | 16-miniQFN (1.8x2.6) | 414MHz | 101Ohm | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 4.2pF 6.8pF | 54ns, 52ns | -0.3pC | 5Ohm | -65dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD2N80AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd2n80aege3-datasheets-4876.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252) | 800V | 62.5W Tc | N-Channel | 180pF @ 100V | 2.9Ohm @ 500mA, 10V | 4V @ 250μA | 2.9A Tc | 10.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9232EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.1mm | RoHS Compliant | /files/vishaysiliconix-dg9233edyge3-datasheets-1801.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 3mm | 8 | 19 Weeks | 2 | YES | DUAL | GULL WING | NOT SPECIFIED | 3V | 0.65mm | 5.5V | 1 | NOT SPECIFIED | 2 | S-PDSO-G8 | 25Ohm | 1:1 | 2.7V~5.5V | SPST - NC | 100pA | 3.8pF | 75ns, 50ns | -0.78pC | 400m Ω | -108dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD6N65E-GE3 | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n65ege3-datasheets-5134.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | Unknown | 3 | yes | No | GULL WING | Single | 78W | 1 | R-PSSO-G2 | 14 ns | 12ns | 20 ns | 30 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 2V | 78W Tc | TO-252AA | 7A | 0.6Ohm | 56 mJ | 650V | N-Channel | 820pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V |
