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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Row Spacing | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG445BDN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg444bdnt1e4-datasheets-2687.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 12 Weeks | 57.09594mg | 36V | 13V | 160Ohm | 16 | yes | unknown | 4 | e4 | PALLADIUM GOLD OVER NICKEL | 850mW | QUAD | NO LEAD | 260 | 15V | 0.65mm | DG445 | 16 | 1 | 30 | Multiplexer or Switches | 4 | Not Qualified | SPST | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3442BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3442bdvt1e3-datasheets-3334.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 57mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 20mW | 1 | FET General Purpose Power | 35 ns | 50ns | 15 ns | 20 ns | 3A | 12V | SILICON | 1.8V | 860mW Ta | 3A | 20V | N-Channel | 295pF @ 10V | 1.8 V | 57m Ω @ 4A, 4.5V | 1.8V @ 250μA | 3A Ta | 5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 50μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 50μA | 16 | 12 Weeks | 1.627801g | Unknown | 25V | 4.5V | 160Ohm | 16 | yes | No | 4 | 50μA | e3 | Matte Tin (Sn) | 470mW | 15V | DG202 | 16 | 1 | 470mW | Multiplexer or Switches | 12/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2303CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2303cdst1ge3-datasheets-4410.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 190mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1W | 1 | Other Transistors | Not Qualified | 150°C | 4 ns | 37ns | 37 ns | 11 ns | -2.7A | 20V | SILICON | SWITCHING | 30V | -3V | 1W Ta 2.3W Tc | -30V | P-Channel | 155pF @ 15V | -3 V | 190m Ω @ 1.9A, 10V | 3V @ 250μA | 2.7A Tc | 8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411HSDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 13 Weeks | 547.485991mg | 44V | 13V | 80Ohm | 16 | yes | unknown | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 15V | 1.27mm | DG411 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NC | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9936BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si9936bdyt1ge3-datasheets-2479.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 186.993455mg | 35mOhm | 8 | No | 1.1W | SI9936 | 2 | Dual | 1.1W | 2 | 8-SO | 10 ns | 15ns | 15 ns | 25 ns | 6A | 20V | 30V | 1.1W | 35mOhm | 30V | 2 N-Channel (Dual) | 35mOhm @ 6A, 10V | 3V @ 250μA | 4.5A | 13nC @ 10V | Logic Level Gate | 35 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407BDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 12 Weeks | 1.182714g | 36V | 7.5V | 100Ohm | 28 | yes | unknown | 1 | e3 | Matte Tin (Sn) | 450mW | QUAD | J BEND | 260 | 15V | DG407 | 28 | 8 | 40 | 450mW | 2 | Not Qualified | 125 ns | 94 ns | 20V | Multiplexer | 148 ns | Dual, Single | 5V | -15V | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 6pF 54pF | 107ns, 88ns | 11pC | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | Lead Free | 14 | No | 2W | 2W | 4 | 14-DIP | 110pF | 830mA | 20V | 30V | 2W | 1.75Ohm | 4 N-Channel | 110pF @ 15V | 1.75Ohm @ 200mA, 5V | 2.5V @ 1mA | 830mA | Logic Level Gate | 1.75 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2012DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 1μA | 6 | No SVHC | 5.5V | 1.8V | 1.8Ohm | 6 | yes | Tin | No | 1 | 10nA | e3 | Non-Inverting | 250mW | DUAL | GULL WING | 260 | 2V | DG2012 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 63 ns | 45 ns | Single | 2 | 100mA | 1 | 1.8Ohm | 1Ohm | 63 dB | 0.25Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.8V~5.5V | SPDT | 500pA | 20pF | 38ns, 32ns | 20pC | 250m Ω (Max) | -64dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3483DDV-T1-GE3 | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3483ddvt1ge3-datasheets-6957.pdf | SOT-23-6 Thin, TSOT-23-6 | 14 Weeks | 6-TSOP | 30V | 2W Ta 3W Tc | P-Channel | 580pF @ 15V | 31.2mOhm @ 5A, 10V | 2.2V @ 250μA | 6.4A Ta 8A Tc | 14.5nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407DN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 1.182714g | Unknown | 44V | 7.5V | 50Ohm | 28 | no | 1 | 50μA | e0 | Tin/Lead (Sn/Pb) | 450mW | QUAD | J BEND | 28 | 8 | DIFFERENTIAL MULTIPLEXER | 450mW | Multiplexer or Switches | 2 | Not Qualified | 600 ns | 300 ns | 20V | 350 ns | Dual, Single | 5V | 16 | 100Ohm | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 8:1 | 500pA | 8pF 65pF | 200ns, 150ns | 15pC | 5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4103DY-T1-GE3 | Vishay Siliconix | $0.62 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4103dyt1ge3-datasheets-7798.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 30V | 2.5W Ta 5.2W Tc | P-Channel | 5200pF @ 15V | 7.9mOhm @ 10A, 10V | 2V @ 250μA | 14A Ta 16A Tc | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 1μA | 8 | 8 Weeks | 930.006106mg | 36V | 13V | 35Ohm | 8 | no | unknown | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | 2.54mm | 8 | 400mW | Multiplexer or Switches | Not Qualified | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 1 | 35Ohm | 20mOhm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA64DP-T1-RE3 | Vishay Siliconix | $0.75 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira64dpt1re3-datasheets-8296.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 27.8W Tc | N-Channel | 3420pF @ 15V | 2.1mOhm @ 10A, 10V | 2.2V @ 250μA | 60A Tc | 65nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG181AA/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg180aa-datasheets-7546.pdf | TO-100-10 Metal Can | 30Ohm | 10 | Yes | 2 | 450mW | 2 | TO-100-10 | 18V | 10V | 2 | 2 | 30Ohm | 1:1 | SPST - NC | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3458BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si3458bdvt1e3-datasheets-9757.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 5 ns | 12ns | 10 ns | 18 ns | 4.1A | 20V | SILICON | SWITCHING | 3V | 2W Ta 3.3W Tc | 3.2A | 60V | N-Channel | 350pF @ 30V | 3 V | 100m Ω @ 3.2A, 10V | 3V @ 250μA | 4.1A Tc | 11nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200ABK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2003 | 14-CDIP (0.300, 7.62mm) | 14 Weeks | 70Ohm | 2 | 14-CERDIP | 70Ohm | 1:1 | SPST - NC | ±15V | 2nA | 9pF 9pF | 440ns, 340ns | -10pC | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9630PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irf9630pbf-datasheets-1286.pdf | -200V | -6.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 800MOhm | 3 | 1 | Single | 74W | 1 | TO-220AB | 700pF | 12 ns | 27ns | 24 ns | 28 ns | -6.5A | 20V | 200V | 4V | 74W Tc | 300 ns | 800mOhm | -200V | P-Channel | 700pF @ 25V | -4 V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | 5.08mm | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg201bdy-datasheets-7652.pdf | 16-CDIP (0.300, 7.62mm) | 19.305mm | 7.62mm | 16 | 14 Weeks | 85Ohm | unknown | 4 | e0 | NO | DUAL | 15V | 16 | 1 | Multiplexer or Switches | 12/+-15V | 4 | Not Qualified | R-CDIP-T16 | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | 200ns | 300ns | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfz44pbf-datasheets-2178.pdf | 60V | 50A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 28mOhm | 3 | Tin | No | 1 | Single | 150W | 1 | TO-220AB | 1.9nF | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | 60V | 60V | 4V | 150W Tc | 28mOhm | 60V | N-Channel | 1900pF @ 25V | 4 V | 28mOhm @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 28 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301AAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg300aak883-datasheets-7683.pdf | 14-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 15V | 500μA | 14 | 15 Weeks | 1.200007g | 36V | 13V | 50Ohm | 14 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 825mW | 15V | 14 | 825mW | Multiplexer or Switches | 1 | 300 ns | 250 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | 50Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLIZ34GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irliz34gpbf-datasheets-3432.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 50mOhm | 3 | No | 1 | Single | 42W | 1 | TO-220-3 | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 20A | 10V | 60V | 2V | 42W Tc | 50mOhm | N-Channel | 1600pF @ 25V | 2 V | 50mOhm @ 12A, 5V | 2V @ 250μA | 20A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201ACK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2002 | /files/vishay-dg201ack-datasheets-8408.pdf | 16-CDIP (0.300, 7.62mm) | 16 | 14 Weeks | 175Ohm | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | Multiplexer or Switches | +-15V | 4 | Not Qualified | R-XDIP-T16 | -15V | SEPARATE OUTPUT | 175Ohm | BREAK-BEFORE-MAKE | 600ns | NC | 1:1 | SPST - NC | ±15V | 1nA | 5pF 5pF | 600ns, 450ns | 20pC | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp460lcpbf-datasheets-4357.pdf | 500V | 20A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 270mOhm | 3 | 20A | 500V | 1 | Single | 280W | 1 | TO-247-3 | 3.6nF | 18 ns | 77ns | 43 ns | 40 ns | 20A | 30V | 500V | 4V | 280W Tc | 270mOhm | 500V | N-Channel | 3600pF @ 25V | 4 V | 270mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 120nC @ 10V | 270 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG304BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2007 | /files/vishaysiliconix-dg306bdj-datasheets-7728.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 100μA | 8 Weeks | 1.620005g | 36V | 13V | 50Ohm | 14 | no | No | 470mW | 14 | 2 | 110 ns | 70 ns | 22V | 15V | Dual, Single | 7V | 50Ohm | 50Ohm | 1:1 | SPST - NO | ±15V | 5nA | 14pF 14pF | 110ns, 70ns (Typ) | 30pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA82EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja82ept1ge3-datasheets-5098.pdf | PowerPAK® SO-8 | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 68W Tc | 60A | 120A | 0.0082Ohm | 62 mJ | N-Channel | 3000pF @ 25V | 8.2m Ω @ 10A, 10V | 2.5V @ 250μA | 60A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 547.485991mg | 44V | 4V | 85Ohm | 16 | No | 640mW | 4 | 640mW | 4 | 16-SOIC | 200 ns | 150 ns | 22V | Dual, Single | 4V | 4 | 4 | 85Ohm | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7Ohm | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD19P06-60L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud19p0660le3-datasheets-6610.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 14 Weeks | 1.437803g | 60mOhm | 3 | No | 1 | Single | 2.7W | 1 | TO-252, (D-Pak) | 2.7nF | 8 ns | 9ns | 30 ns | 65 ns | 19A | 20V | 60V | 2.7W Ta 46W Tc | 60mOhm | P-Channel | 1710pF @ 25V | 60mOhm @ 10A, 10V | 3V @ 250μA | 19A Tc | 40nC @ 10V | 8.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg403bdy-datasheets-7786.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 45Ohm | 16 | no | No | 2 | e0 | TIN LEAD | YES | 600mW | GULL WING | 240 | 15V | 16 | 1 | 30 | Multiplexer or Switches | 2 | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfd110pbf-datasheets-8803.pdf | 100V | 1A | 4-DIP (0.300, 7.62mm) | 5mm | 4.57mm | 6.29mm | Lead Free | 3 | 8 Weeks | Unknown | 540mOhm | 4 | 2.54mm | EAR99 | DUAL | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 1.3W | 1 | Not Qualified | 175°C | R-PDIP-T3 | 6.9 ns | 16ns | 16 ns | 15 ns | 1A | 20V | 100V | SILICON | DRAIN | SWITCHING | 7.62 mm | 4V | 1.3W Ta | 200 ns | 1A | 100V | N-Channel | 180pF @ 25V | 4 V | 540m Ω @ 600mA, 10V | 4V @ 250μA | 1A Ta | 8.3nC @ 10V | 10V | ±20V |
