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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Manufacturer Package Identifier | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Switch-on Time-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7234DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7234dpt1ge3-datasheets-7285.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | 3.4mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7234 | 8 | 2 | 30 | 3.5W | 2 | FET General Purpose Powers | R-XDSO-C6 | 30 ns | 15ns | 25 ns | 90 ns | 60A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 46W | 2 N-Channel (Dual) | 5000pF @ 6V | 3.4m Ω @ 20A, 4.5V | 1.5V @ 250μA | 120nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9424BDY-T1-GE3 | Vishay Siliconix | $3.91 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9424bdyt1e3-datasheets-6263.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.25W | 1 | Other Transistors | 30 ns | 40ns | 70 ns | 130 ns | -7.1A | 9V | SILICON | 20V | -450mV | 1.25W Ta | 5.6A | 0.025Ohm | -20V | P-Channel | 25m Ω @ 7.1A, 4.5V | 850mV @ 250μA | 5.6A Ta | 40nC @ 4.5V | 2.5V 4.5V | ±9V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM90N10-8M2P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sum90n108m2pe3-datasheets-9746.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.826mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 8.2mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 3 | 1 | Single | 40 | 300W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 23 ns | 17ns | 9 ns | 34 ns | 90A | 20V | SILICON | SWITCHING | 2.5V | 3.75W Ta 300W Tc | 240A | 100V | N-Channel | 6290pF @ 50V | 8.2m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P04-40P-T4-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p0440pt4e3-datasheets-3311.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 40mOhm | 1 | Single | 6A | 20V | 40V | 2.4W Ta 24W Tc | P-Channel | 1555pF @ 20V | 40m Ω @ 5A, 10V | 2.7V @ 250μA | 6A Ta 8A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5902BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5902bdct1e3-datasheets-1153.pdf | 8-SMD, Flat Lead | 1.1mm | Lead Free | 14 Weeks | 84.99187mg | No SVHC | 65mOhm | 8 | No | 3.12W | SI5902 | 2 | Dual | 1.5W | 2 | 150°C | 1206-8 ChipFET™ | 220pF | 4 ns | 10 ns | 3.7A | 20V | 30V | 1.5V | 3.12W | 53mOhm | 30V | 2 N-Channel (Dual) | 220pF @ 15V | 1.5 V | 65mOhm @ 3.1A, 10V | 3V @ 250μA | 4A | 7nC @ 10V | Logic Level Gate | 65 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP36N20-54P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup36n2054pe3-datasheets-3416.pdf | TO-220-3 | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.12W | 1 | FET General Purpose Power | 16 ns | 170ns | 9 ns | 27 ns | 36A | 25V | 200V | SILICON | SWITCHING | 4.5V | 3.12W Ta 166W Tc | TO-220AB | 80A | 20 mJ | 200V | N-Channel | 3100pF @ 25V | 4.5 V | 53m Ω @ 20A, 15V | 4.5V @ 250μA | 36A Tc | 127nC @ 15V | 10V 15V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ910EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqjq910elt1ge3-datasheets-5218.pdf | PowerPAK® 8 x 8 Dual | 12 Weeks | 4 | PowerPAK® 8 x 8 Dual | 100V | 187W | 2 N-Channel (Dual) | 2832pF @ 50V | 8.6mOhm @ 10A, 10V | 2.5V @ 250μA | 70A Tc | 58nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P08-26-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50p0826e3-datasheets-4091.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Single | 8.3W | 1 | TO-252, (D-Pak) | 5.16nF | 50ns | 65 ns | 90 ns | 12.9A | 20V | 80V | 8.3W Ta 136W Tc | 26mOhm | -80V | P-Channel | 5160pF @ 40V | 26mOhm @ 12.9A, 10V | 4V @ 250μA | 50A Tc | 155nC @ 10V | 26 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1022R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1022rt1ge3-datasheets-7035.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | No SVHC | 3Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 250mW | 1 | 330mA | 20V | SILICON | SWITCHING | 60V | 60V | 2.5V | 250mW Ta | N-Channel | 30pF @ 25V | 1.25 Ω @ 500mA, 10V | 2.5V @ 250μA | 330mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR640DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir640dpt1ge3-datasheets-2960.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | YES | DUAL | C BEND | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 6.25W Ta 104W Tc | 60A | 100A | 0.0022Ohm | 80 mJ | N-Channel | 4930pF @ 20V | 1.7m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 113nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2314EDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2314edst1e3-datasheets-8750.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 33mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 530 ns | 1.4μs | 1.4 μs | 13.5 μs | 4.9A | 12V | SILICON | SWITCHING | 950mV | 750mW Ta | 20V | N-Channel | 950 mV | 33m Ω @ 5A, 4.5V | 950mV @ 250μA | 3.77A Ta | 14nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4888DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4888dyt1ge3-datasheets-6431.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | Unknown | 7mOhm | 8 | No | Single | 1.6W | 1 | 8-SO | 14 ns | 10ns | 10 ns | 44 ns | 16A | 20V | 30V | 1.6W Ta | 7mOhm | 30V | N-Channel | 800 mV | 7mOhm @ 16A, 10V | 1.6V @ 250μA | 11A Ta | 24nC @ 5V | 7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7461DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7461dpt1e3-datasheets-0011.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 6.25mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Powers | 150°C | R-XDSO-C5 | 20 ns | 20ns | 20 ns | 205 ns | -14.4A | 20V | SILICON | DRAIN | 60V | 60V | -3V | 1.9W Ta | 60A | P-Channel | 14.5m Ω @ 14.4A, 10V | 3V @ 250μA | 8.6A Ta | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB410DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sib410dkt1ge3-datasheets-9115.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 15 Weeks | 95.991485mg | Unknown | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 6 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | S-XDSO-C3 | 6 ns | 10ns | 10 ns | 20 ns | 9A | 8V | SILICON | DRAIN | SWITCHING | 400mV | 2.5W Ta 13W Tc | 9A | 20A | 0.042Ohm | 30V | N-Channel | 560pF @ 15V | 42m Ω @ 3.8A, 4.5V | 1V @ 250μA | 9A Tc | 15nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7450DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7450dpt1e3-datasheets-1059.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 80mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 14 ns | 20ns | 20 ns | 32 ns | 3.2A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 1.9W Ta | 40A | 200V | N-Channel | 80m Ω @ 4A, 10V | 4.5V @ 250μA | 3.2A Ta | 42nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | Lead Free | 3 | Tin | No | 1 | Single | 725mW | 1 | TO-39 | 50pF | 860mA | 20V | 90V | 725mW Ta 6.25W Tc | 4Ohm | 90V | N-Channel | 50pF @ 25V | 4Ohm @ 1A, 10V | 2V @ 1mA | 860mA Tc | 4 Ω | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7463DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7463dpt1ge3-datasheets-1824.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 9.2MOhm | 8 | yes | EAR99 | No | S17-0173-Single | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 20 ns | 25ns | 25 ns | 200 ns | -18.6A | 20V | SILICON | DRAIN | 40V | -3V | 1.9W Ta | 60A | -40V | P-Channel | -3 V | 9.2m Ω @ 18.6A, 10V | 3V @ 250μA | 11A Ta | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP1008B | Vishay Siliconix | $43.72 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | Contains Lead | 3 | 51 Weeks | 3 | EAR99 | No | e0 | TIN LEAD | BOTTOM | WIRE | 225 | 2 | 1 | Single | 30 | 1 | 11 ns | 30ns | 20 ns | 20 ns | 790mA | 20V | SILICON | DRAIN | SWITCHING | 6.25W Ta | 0.79A | 5Ohm | 25 pF | 100V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 790mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002E-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-2n7002et1e3-datasheets-4071.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 12 Weeks | 1.437803g | Unknown | 3Ohm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 350mW | 1 | FET General Purpose Powers | 150°C | 13 ns | 18 ns | 240mA | 20V | SILICON | SWITCHING | 60V | 2V | 350mW Ta | 0.24A | 70V | N-Channel | 21pF @ 5V | 2 V | 3 Ω @ 250mA, 10V | 2.5V @ 250μA | 240mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP50N10-21P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf830bpbf-datasheets-8569.pdf | TO-220-3 | Lead Free | 3 | 15 Weeks | 6.000006g | 21mOhm | yes | EAR99 | No | e3 | PURE MATTE TIN | 260 | 1 | Single | 30 | 1 | R-PSFM-T3 | 10 ns | 20ns | 14 ns | 22 ns | 50A | 20V | SILICON | SWITCHING | 3.1W Ta 125W Tc | TO-220AB | 60A | 80 mJ | 100V | N-Channel | 2055pF @ 50V | 21m Ω @ 10A, 10V | 4V @ 250μA | 50A Tc | 68nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7414DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7414dnt1e3-datasheets-7511.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 25mOhm | 8 | yes | EAR99 | No | SI7414DN-T1-E3 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | 150°C | S-XDSO-C5 | 15 ns | 12ns | 12 ns | 30 ns | 5.6A | 20V | SILICON | DRAIN | SWITCHING | 3V | 1.5W Ta | 30A | 60V | N-Channel | 3 V | 25m Ω @ 8.7A, 10V | 3V @ 250μA | 5.6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD17N25-165-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud17n25165e3-datasheets-9722.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 16 Weeks | 1.437803g | 165mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 3W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 130ns | 100 ns | 30 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 3W Ta 136W Tc | 20A | N-Channel | 1950pF @ 25V | 165m Ω @ 14A, 10V | 4V @ 250μA | 17A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7454DDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7454ddpt1ge3-datasheets-8143.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 5 | 14 Weeks | Unknown | 33MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 29.7W | 1 | 150°C | R-PDSO-C5 | 10 ns | 13ns | 9 ns | 16 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 3V | 4.1W Ta 29.7W Tc | 40A | 7.2 mJ | 100V | N-Channel | 550pF @ 50V | 33m Ω @ 10A, 10V | 3V @ 250μA | 21A Tc | 19.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR808DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir808dpt1ge3-datasheets-2044.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | Unknown | 8 | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-C5 | 5 ns | 10ns | 7 ns | 14 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 1V | 29.8W Tc | 50A | 22 mJ | 25V | N-Channel | 815pF @ 12.5V | 8.9m Ω @ 17A, 10V | 2.5V @ 250μA | 20A Tc | 22.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD15N15-95-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sud15n1595e3-datasheets-9092.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 95mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 62W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 35ns | 30 ns | 17 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.7W Ta 62W Tc | 25A | 150V | N-Channel | 900pF @ 25V | 2 V | 95m Ω @ 15A, 10V | 2V @ 250μA (Min) | 15A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR774DP-T1-GE3 | Vishay Siliconix | $6.79 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir774dpt1ge3-datasheets-2880.pdf | 5 | EAR99 | YES | 62.5W | DUAL | C BEND | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 62.5W | 1 | FET General Purpose Power | R-XDSO-C5 | 10ns | 10 ns | 33 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 80A | 2.1mOhm | 45 mJ | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2337DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2337dst1e3-datasheets-2246.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 270mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 760mW | 1 | Other Transistors | 150°C | 10 ns | 15ns | 15 ns | 20 ns | -2.2A | 20V | SILICON | SWITCHING | 80V | -2V | 760mW Ta 2.5W Tc | -80V | P-Channel | 500pF @ 40V | 270m Ω @ 1.2A, 10V | 4V @ 250μA | 2.2A Tc | 17nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB437EDKT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sib437edktt1ge3-datasheets-4889.pdf | PowerPAK® TSC-75-6 | 3 | 15 Weeks | 95.991485mg | Unknown | 6 | EAR99 | No | DUAL | 6 | 1 | Single | 2.4W | 1 | Other Transistors | S-PDSO-N3 | 90 ns | 170ns | 630 ns | 690 ns | 7.5A | 5V | SILICON | DRAIN | SWITCHING | 8V | -350mV | 2.4W Ta 13W Tc | 9A | 25A | 0.034Ohm | -8V | P-Channel | 34m Ω @ 3A, 4.5V | 700mV @ 250μA | 9A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2301BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/vishaysiliconix-si2301bdst1e3-datasheets-4774.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 100MOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 700mW | 1 | Other Transistors | 150°C | 20 ns | 40ns | 40 ns | 30 ns | -2.2A | 8V | SILICON | 20V | -950mV | 700mW Ta | -20V | P-Channel | 375pF @ 6V | -950 mV | 100m Ω @ 2.8A, 4.5V | 950mV @ 250μA | 2.2A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32409DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32409dnpt1ge4-datasheets-0144.pdf | 4-UFDFN Exposed Pad | 4 | 16 Weeks | 50.008559mg | 52mOhm | 4 | On/Off | yes | No | 5.5V | 1 | Load Discharge, Slew Rate Controlled | Palladium/Gold (Pd/Au) - with Nickel (Ni) barrier | 735mW | DUAL | 5V | 0.5mm | 1 | SPST | 735mW | 3.5A | 3.5A | N-Channel | 1.1V~5.5V | 1.8 ms | 1 μs | 1 | General Purpose | High Side | Reverse Current | 3800000ns | Not Required | 44m Ω | 1:1 |
