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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | Number of Functions | Voltage - Input (Max) | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Output Power | Output Voltage | Output Current | Output Type | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | FET Technology | Number of Outputs | Max Output Power | High Level Output Current | Threshold Voltage | Output Configuration | Power - Max | Input Voltage-Nom | Topology | Synchronous Rectifier | Max Duty Cycle | Clock Sync | Number of Inputs | Output | Efficiency | Control Mode | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Voltage - Input (Min) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Control Features | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Frequency - Switching | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Duty Cycle (Max) | Output Phases | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIP12504DMP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerPAK® MLP33-6 | 14 Weeks | SIP12504 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4973DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4973dyt1e3-datasheets-4561.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | Unknown | 23mOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4973 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | Not Qualified | 10 ns | 15ns | 90 ns | 115 ns | 7.6A | 25V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30V | 2 P-Channel (Dual) | -3 V | 23m Ω @ 7.6A, 10V | 3V @ 250μA | 5.8A | 56nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9102DN02-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BCDMOS | 4.57mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9102dn02t1e3-datasheets-5233.pdf | 20-LCC (J-Lead) | 8.9662mm | 8.9662mm | 13.5V | Lead Free | 20 | 722.005655mg | 20 | yes | EAR99 | 120V | e3 | Matte Tin (Sn) | QUAD | J BEND | 250 | SI9102 | SWITCHING REGULATOR | 40 | Switching Regulator or Controllers | 3W | 4V | 150μA | Fixed | Step-Up/Step-Down | 1 | 3W | Positive, Isolation Capable | 10V | Flyback, Forward Converter | No | 80 % | CURRENT-MODE | SINGLE | 10V | 40kHz~1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5513DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5513dct1e3-datasheets-4604.pdf | 8-SMD, Flat Lead | 3.0988mm | 1.0922mm | 1.7018mm | Lead Free | No SVHC | 155mOhm | 8 | No | 1.1W | SI5513 | Dual | 1.1W | 2 | 1206-8 ChipFET™ | 13 ns | 35ns | 35 ns | 25 ns | 4.2A | 12V | 20V | 20V | 1.5V | 1.1W | 130mOhm | 20V | N and P-Channel | 1.5 V | 75mOhm @ 3.1A, 4.5V | 1.5V @ 250μA | 3.1A 2.1A | 6nC @ 4.5V | Logic Level Gate | 75 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9145BY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -25°C~85°C TA | Bulk | 1 (Unlimited) | 85°C | -25°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si9145bqt1e3-datasheets-9816.pdf | 16-SOIC (0.154, 3.90mm Width) | 665.986997mg | 7V | 16 | No | 2MHz | SI9145 | 16-SOIC | 2.6V | 200mA | Transistor Driver | Step-Up/Step-Down | 1 | Positive | Buck, Boost | Yes | 100 % | No | Enable, Frequency Control, Soft Start | 2.7V~7V | 2kHz~2MHz | 100% | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7214DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7214dnt1e3-datasheets-4713.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | Unknown | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7214 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Powers | R-XDSO-C6 | 7 ns | 10ns | 10 ns | 19 ns | 6.4A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 2.1V | 4.6A | 30V | 2 N-Channel (Dual) | 40m Ω @ 6.4A, 10V | 3V @ 250μA | 4.6A | 6.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG452EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg452eqt1e3-datasheets-7713.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 500nA | 16 | 15 Weeks | 172.98879mg | No SVHC | 36V | 12V | 7.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | Tin | No | 4 | 500nA | e3 | Non-Inverting | 450mW | GULL WING | 260 | 5V | 0.65mm | DG452 | 16 | 1 | 40 | 450mW | Multiplexer or Switches | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 100mA | 4 | 5.3Ohm | 4Ohm | 0.13Ohm | BREAK-BEFORE-MAKE | 113ns | 256ns | NO | 1:1 | SPST - NO | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7964DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7964dpt1e3-datasheets-4803.pdf | PowerPAK® SO-8 Dual | 6 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7964 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 20 ns | 15ns | 15 ns | 50 ns | 9.6A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 4.5V | 6.1A | 40A | 31 mJ | 60V | 2 N-Channel (Dual) | 23m Ω @ 9.6A, 10V | 4.5V @ 250μA | 6.1A | 65nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG271BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5.5mA | ROHS3 Compliant | /files/vishaysiliconix-dg271bdye3-datasheets-5527.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | Lead Free | 7.5mA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 50Ohm | 16 | yes | No | 4 | 5.5mA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG271 | 16 | 1 | 30 | 600mW | Multiplexer or Switches | SPST | 65 ns | 65 ns | 22V | 15V | Dual | 7V | -15V | 4 | 50Ohm | 85 dB | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 1nA | 8pF 8pF | 65ns, 65ns | -5pC | -100dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7905DN-T1-GE3 | Vishay Siliconix | $5.01 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7905dnt1ge3-datasheets-5421.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 15 Weeks | Unknown | 60mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.5W | C BEND | 260 | SI7905 | 8 | 2 | Dual | 40 | 2.5W | 2 | Other Transistors | R-XDSO-C6 | 6 ns | 13ns | 10 ns | 26 ns | -6A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | -1V | 20.8W | 5A | -40V | 2 P-Channel (Dual) | 880pF @ 20V | 60m Ω @ 5A, 10V | 3V @ 250μA | 6A | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409LEDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg409ledyt1ge3-datasheets-1177.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 16 | 18 Weeks | 23Ohm | 16 | 1 | e3 | PURE MATTE TIN | YES | DUAL | GULL WING | 260 | 5V | 4 | DIFFERENTIAL MULTIPLEXER | 30 | 2 | -5V | 23Ohm | 51ns | 80ns | 3V~16V ±3.3V~8V | 4:1 | SP4T | 1nA | 5.5pF 13.5pF | 72ns, 47ns | -10pC | 1 Ω | -109dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7842DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7842dpt1e3-datasheets-4743.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7842 | 8 | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 8 ns | 10ns | 10 ns | 21 ns | 10A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3A | 30A | 0.022Ohm | 30V | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 2.4V @ 250μA | 6.3A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2723DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | 0.6mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2723dnt1e4-datasheets-7578.pdf | 10-UFQFN | 1.8mm | 3V | 10 | 14 Weeks | 4.3V | 2.6V | 8Ohm | 10 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | QUAD | NO LEAD | 260 | 3V | DG2723 | 10 | 1 | 40 | 208mW | Multiplexer or Switches | 3V | Not Qualified | 700MHz | Single | 4 | 2 | 8Ohm | 30 dB | 0.8Ohm | BREAK-BEFORE-MAKE | 30ns | 2:1 | 2.6V~5.5V | SPDT | 100nA | 2.5pF | 30ns, 25ns | 3pC | 800m Ω | -36dB @ 240MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4214DDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4214ddyt1ge3-datasheets-6200.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 19.5mOhm | 3.1W | 8-SO | 660pF | 8.5A | 30V | 3.1W | 2 N-Channel (Dual) | 660pF @ 15V | 19.5mOhm @ 8A, 10V | 2.5V @ 250μA | 8.5A | 22nC @ 10V | Logic Level Gate | 19.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3157EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg3157edlt1ge3-datasheets-5260.pdf | 6-TSSOP, SC-88, SOT-363 | 17 Weeks | 1 | SC-70-6 | 580MHz | 9Ohm | 2:1 | 1.65V~5.5V | SPDT | 100nA | 1.3pC | 90mOhm | -61dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4808DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4808dyt1e3-datasheets-9830.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 6 Weeks | 22mOhm | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 5.7A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 800mV @ 250μA (Min) | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | 15V | Lead Free | 1μA | 12 Weeks | 139.989945mg | No SVHC | 36V | 13V | 35Ohm | 8 | Tin | No | 1μA | Non-Inverting | 400mW | DG419 | 1 | 400mW | 1 | 8-MSOP | SPDT | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | 2 | 30mA | 2 | 25Ohm | 35Ohm | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1539DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1539dlt1e3-datasheets-4294.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 7.512624mg | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | DUAL | GULL WING | 260 | SI1539 | 6 | 30 | 270mW | 2 | Other Transistors | 420mA | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.48Ohm | 30V | N and P-Channel | 480m Ω @ 590mA, 10V | 2.6V @ 250μA | 540mA 420mA | 1.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201HSDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg201hsdqt1e3-datasheets-3678.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 16.5V | Lead Free | 10mA | 16 | 15 Weeks | 172.98879mg | 25V | 13V | 90Ohm | 16 | yes | unknown | 4 | 4.5mA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 0.65mm | DG201 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 60 ns | 50 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | 85 dB | 0.75Ohm | BREAK-BEFORE-MAKE | NC | 10.8V~16.5V ±15V | 1:1 | SPST - NC | 1nA | 5pF | 60ns, 50ns | -5pC | 1.5 Ω | -100dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4650DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4650dyt1e3-datasheets-1927.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | 3.1W | DUAL | GULL WING | 260 | SI4650 | 8 | 2 | 30 | 2 | 32 ns | 130ns | 34 ns | 19 ns | 7.8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30A | 30V | 2 N-Channel (Half Bridge) | 1550pF @ 15V | 18m Ω @ 8A, 10V | 3V @ 1mA | 8A | 40nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG211BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 10μA | ROHS3 Compliant | 2005 | /files/vishaysiliconix-dg211bdyt1e3-datasheets-9940.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 10μA | 16 | 12 Weeks | 1.627801g | Unknown | 25V | 4.5V | 160Ohm | 16 | yes | Tin | No | 4 | 50μA | e3 | Non-Inverting | 470mW | 260 | 15V | DG211 | 16 | 1 | 40 | 470mW | Multiplexer or Switches | 512/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 100mA | 4 | 85Ohm | 50Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7911DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7911dnt1e3-datasheets-4763.pdf | PowerPAK® 1212-8 Dual | Lead Free | 6 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.3W | C BEND | 260 | SI7911 | 8 | Dual | 30 | 2 | Other Transistors | S-XDSO-C6 | 20 ns | 35ns | 40 ns | 70 ns | 4.2A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 20A | 0.051Ohm | -20V | 2 P-Channel (Dual) | 51m Ω @ 5.7A, 4.5V | 1V @ 250μA | 15nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408DQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg408dye3-datasheets-7678.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.07mm | 920μm | 4.4mm | 36V | Lead Free | 500μA | 16 | 15 Weeks | 172.98879mg | 44V | 13V | 90Ohm | 16 | yes | No | 1 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 265 | 15V | 0.65mm | DG408 | 16 | 8 | 40 | 600mW | 1 | 150 ns | 150 ns | 20V | 15V | Multiplexer | 160 ns | Dual, Single | 5V | -15V | 100Ohm | 75 dB | 15Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 8:1 | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3993DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3993dvt1e3-datasheets-4452.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3993 | 6 | 2 | Dual | 30 | 830mW | 2 | Other Transistors | 10 ns | 16ns | 12 ns | 17 ns | -2.2A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -3V | 1.8A | 0.133Ohm | -30V | 2 P-Channel (Dual) | -3 V | 133m Ω @ 2.2A, 10V | 3V @ 250μA | 1.8A | 5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411DJ-E3 | Vishay Siliconix | $2.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg413dqt1e3-datasheets-3810.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | Lead Free | 1μA | 16 | 1.627801g | Unknown | 36V | 13V | 35Ohm | 16 | yes | Tin | No | 4 | 100pA | e3 | Non-Inverting | 470mW | 260 | 15V | DG411 | 16 | 1 | 30 | 470mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 30mA | 4 | 35Ohm | 25Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | NC | 5V~44V ±5V~20V | 1:1 | SPST - NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3905DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3905dvt1ge3-datasheets-2249.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 1.15W | Dual | 1.15W | 2 | 6-TSOP | 47ns | 47 ns | 28 ns | 2.5A | 8V | 8V | 1.15W | 125mOhm | 8V | 2 P-Channel (Dual) | 125mOhm @ 2.5A, 4.5V | 450mV @ 250μA (Min) | 6nC @ 4.5V | Logic Level Gate | 125 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG213DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg213dye3-datasheets-4404.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 1μA | 16 | 13 Weeks | 547.485991mg | 40V | 3V | 110Ohm | 16 | yes | No | 4 | 5μA | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 1.27mm | DG213 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 512/+-15V | SPST | 130 ns | 100 ns | 22V | Dual, Single | 3V | -15V | 4 | SEPARATE OUTPUT | 60Ohm | 90 dB | 1Ohm | BREAK-BEFORE-MAKE | 3V~40V ±3V~22V | 1:1 | SPST - NO/NC | 500pA | 5pF 5pF | 130ns, 100ns | 1pC | 1 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4914BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4914bdyt1ge3-datasheets-1944.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 15 Weeks | 506.605978mg | 8 | No | 3.1W | SI4914 | 2 | 2 | 8-SO | 10 ns | 9ns | 9 ns | 16 ns | 7.4A | 20V | 30V | 2.7W 3.1W | 23mOhm | 30V | 2 N-Channel (Half Bridge) | 21mOhm @ 8A, 10V | 2.7V @ 250μA | 8.4A 8A | 10.5nC @ 4.5V | Standard | 21 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG212BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 10μA | ROHS3 Compliant | /files/vishaysiliconix-dg211bdyt1e3-datasheets-9940.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 10μA | 15 Weeks | 172.98879mg | Unknown | 25V | 4.5V | 160Ohm | 16 | 50μA | 640mW | DG212 | 4 | 640mW | 4 | 16-TSSOP | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | 4 | 85Ohm | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2Ohm | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4967DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4967dyt1e3-datasheets-2305.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | 23mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | 8 | Dual | 40 | 2W | 2 | Other Transistors | 25 ns | 40ns | 95 ns | 210 ns | 7.5A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | 30A | -12V | 2 P-Channel (Dual) | 23m Ω @ 7.5A, 4.5V | 450mV @ 250μA (Min) | 55nC @ 10V | Logic Level Gate |
