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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI4544DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4544dyt1ge3-datasheets-2234.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No | 2.4W | GULL WING | Dual | 2.4W | 2 | R-PDSO-G8 | 13 ns | 6.5A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 20A | 0.035Ohm | 30V | N and P-Channel, Common Drain | 35m Ω @ 6.5A, 10V | 1V @ 250μA (Min) | 35nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg442bdyt1e3-datasheets-1247.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 13 Weeks | 665.986997mg | No SVHC | 25V | 13V | 80Ohm | 16 | yes | No | 4 | 1μA | e3 | Matte Tin (Sn) | 900mW | GULL WING | 260 | 15V | 1.27mm | DG441 | 16 | 1 | 40 | 900mW | Multiplexer or Switches | SPST | 220 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4818DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4818dyt1e3-datasheets-2252.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | unknown | 1.25W | NOT SPECIFIED | NOT SPECIFIED | 1.25W | 5ns | 7A | 20V | 1W 1.25W | 30V | 2 N-Channel (Dual) | 22m Ω @ 6.3A, 10V | 800mV @ 250μA (Min) | 5.3A 7A | 12nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4052EEY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4053eeqt1ge3-datasheets-7535.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 16 | 18 Weeks | 78Ohm | 16 | unknown | 1 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 2 | 353MHz | -5V | 78Ohm | 49 dB | 0.91Ohm | 97ns | 86ns | 3V~16V ±3V~8V | 4:1 | SP4T | 1nA | 2.2pF 4.8pF | 75ns, 88ns | 0.3pC | 910m Ω | -105dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4562DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4562dyt1ge3-datasheets-2293.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2W | DUAL | GULL WING | 260 | SI4562 | 8 | 2 | 30 | 1 | Other Transistors | 27 ns | 32ns | 45 ns | 95 ns | 7.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 40A | N and P-Channel | 25m Ω @ 7.1A, 4.5V | 1.6V @ 250μA | 50nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2519EDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg2519ednt1ge4-datasheets-6196.pdf | 10-VFDFN Exposed Pad | 18 Weeks | unknown | 2 | 217MHz | 4Ohm | 2:1 | 1.8V~5.5V | SPDT | 40ns, 33ns | 14pC | 500m Ω | -61dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4973DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4973dyt1e3-datasheets-4561.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 23MOhm | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4973 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | R-PDSO-G8 | 10 ns | 15ns | 90 ns | 115 ns | 5.8A | 25V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 30V | 2 P-Channel (Dual) | 23m Ω @ 7.6A, 10V | 3V @ 250μA | 56nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3538DB-T5-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg3540dbt1e1-datasheets-7855.pdf | 8-WFBGA | 1μA | 21 Weeks | 5.5V | 1.8V | 4Ohm | 8 | No | 1nA | 400mW | DG3538 | 2 | 8-MicroFoot™ (1.5x1.5) | 360MHz | SPST | 46 ns | 37 ns | Single | 3.5Ohm | 1:1 | 1.8V~5.5V | SPST - NO/NC | 2nA | 8pF | 41ns, 37ns | 1pC | 200mOhm (Max) | -66dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6966DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6966dqt1ge3-datasheets-2331.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 8 | EAR99 | No | e3 | MATTE TIN | 830mW | GULL WING | 260 | SI6966 | 8 | Dual | 40 | 830mW | 2 | 11 ns | 9ns | 9 ns | 36 ns | 4.5A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 4A | 0.03Ohm | 20V | 2 N-Channel (Dual) | 30m Ω @ 4.5A, 4.5V | 1.4V @ 250μA | 4A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG721DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Digi-Reel® | 1 (Unlimited) | CMOS | 2μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg723dqt1ge3-datasheets-5589.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 950μm | 3.1mm | 2μA | 8 | 12 Weeks | 139.989945mg | No SVHC | 5.5V | 1.8V | 4.5Ohm | 8 | VIDEO APPLICATION | No | 2 | e4 | 320mW | DUAL | GULL WING | 3V | 0.65mm | DG721 | 8 | 1 | 320mW | Multiplexer or Switches | 3/5V | 366MHz | SPST | 30 ns | 35 ns | Single | 2 | SEPARATE OUTPUT | 4.5Ohm | 47 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 40ns | 55ns | NO | 1:1 | 1.8V~5.5V | SPST - NO | 250pA | 8pF 9pF | 30ns, 35ns | 2.2pC | 200m Ω | -90dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7872DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7872dpt1e3-datasheets-4752.pdf | PowerPAK® SO-8 Dual | 6 | 15 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7872 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 9 ns | 10ns | 9 ns | 10A | 12V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6.4A | 30A | 2 N-Channel (Half Bridge) | 22m Ω @ 7.5A, 10V | 3V @ 250μA | 6.4A | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg442bdyt1e3-datasheets-1247.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 13 Weeks | 665.986997mg | 25V | 13V | 90Ohm | 16 | yes | No | 4 | e3 | Matte Tin (Sn) | 900mW | GULL WING | 260 | 15V | 1.27mm | DG442 | 16 | 1 | 40 | 900mW | Multiplexer or Switches | SPST | 220 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7983DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7983dpt1e3-datasheets-4787.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 17mOhm | 1.4W | SI7983 | 2 | Dual | PowerPAK® SO-8 Dual | 35 ns | 60ns | 190 ns | 390 ns | 7.7A | 8V | 20V | 1.4W | 17mOhm | 2 P-Channel (Dual) | 17mOhm @ 12A, 4.5V | 1V @ 600μA | 7.7A | 74nC @ 4.5V | Logic Level Gate | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1mA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg403bdye3-datasheets-4860.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500μA | 16 | 10 Weeks | 1.627801g | 36V | 13V | 55Ohm | 16 | yes | No | 2 | e3 | Matte Tin (Sn) | 450mW | 15V | DG401 | 16 | 1 | 450mW | Multiplexer or Switches | SPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4310BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4310bdyt1e3-datasheets-2886.pdf | 14-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1.47W | 2 | Dual | 2 | 14-SOIC | 2.37nF | 17 ns | 12ns | 12 ns | 53 ns | 9.8A | 20V | 30V | 1.14W 1.47W | 8.5mOhm | 30V | 2 N-Channel (Dual) | 2370pF @ 15V | 11mOhm @ 10A, 10V | 3V @ 250μA | 7.5A 9.8A | 18nC @ 4.5V | Logic Level Gate | 11 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg408dye3-datasheets-7678.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 36V | Lead Free | 500μA | 16 | 13 Weeks | 665.986997mg | Unknown | 44V | 13V | 100Ohm | 16 | yes | Tin | No | 1 | 10μA | e3 | 600mW | GULL WING | 260 | 15V | DG408 | 16 | 8 | 30 | 600mW | 1 | 150 ns | 150 ns | 20V | 15V | Multiplexer | Dual, Single | 5V | -15V | 30mA | 100Ohm | 100Ohm | 75 dB | 15Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 8:1 | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4447ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4447adyt1ge3-datasheets-3889.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 8 | No | 1 | Single | 2.5W | 2 | 8-SO | 970pF | 7 ns | 12ns | 9 ns | 30 ns | 7.2A | 20V | 40V | -1.2V | 4.2W Tc | 45mOhm | -40V | P-Channel | 970pF @ 20V | 45mOhm @ 5A, 10V | 2.5V @ 250μA | 7.2A Tc | 38nC @ 10V | 45 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG221BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 800μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg221bdyt1e3-datasheets-0185.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 1.5mA | 16 | 13 Weeks | 547.485991mg | 18V | 13V | 90Ohm | 16 | unknown | 4 | 600mW | GULL WING | 15V | 1.27mm | DG221 | DPDT | 600mW | Multiplexer or Switches | Not Qualified | SPST | 550 ns | 340 ns | 18V | 15V | Dual | 7V | -15V | 4 | SEPARATE OUTPUT | 90Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 5nA | 8pF 9pF | 550ns, 340ns | 20pC | -90dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ790DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz790dtt1ge3-datasheets-5709.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 6 | 15 Weeks | Unknown | 6 | EAR99 | No | 48W | DUAL | C BEND | SIZ790 | 6 | 2 | 2 | FET General Purpose Power | 15ns | 10 ns | 35A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.1V | 27W 48W | 70A | 0.0093Ohm | 13 mJ | 30V | 2 N-Channel (Half Bridge) | 830pF @ 15V | 9.3m Ω @ 15A, 10V | 2.2V @ 250μA | 16A 35A | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG384BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 230μA | 5.08mm | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg390bdje3-datasheets-5350.pdf | 16-DIP (0.300, 7.62mm) | 15V | 1mA | 16 | 10 Weeks | 36V | 13V | 50Ohm | 14 | yes | No | 2 | 230μA | e3 | MATTE TIN | 470mW | 15V | DG384 | 16 | 1 | Multiplexer or Switches | 2 | R-PDIP-T16 | DPST | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | 62 dB | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 10pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA914ADJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia914adjt1ge3-datasheets-5983.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 15 Weeks | 28.009329mg | Unknown | 6 | EAR99 | No | 7.8W | Dual | 1.9W | 2 | 7 ns | 20ns | 5 ns | 25 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.043Ohm | 20V | 2 N-Channel (Dual) | 470pF @ 10V | 43m Ω @ 3.7A, 4.5V | 900mV @ 250μA | 12.5nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9431DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9431edyge3-datasheets-8821.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 1μA | 6 | 19.986414mg | No SVHC | 12V | 2.7V | 30Ohm | 6 | yes | No | 1 | 1μA | e3 | Matte Tin (Sn) | 400mW | DUAL | GULL WING | 260 | 3V | 0.95mm | DG9431 | 6 | 1 | 40 | Multiplexer or Switches | 3/5V | 75 ns | 50 ns | Single | 2 | 1 | 30Ohm | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA936EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia936edjt1ge3-datasheets-6242.pdf | PowerPAK® SC-70-6 Dual | 28.009329mg | Unknown | 27mOhm | 6 | EAR99 | 7.8W | NOT SPECIFIED | SIA936ED | 2 | Dual | NOT SPECIFIED | 20 ns | 20ns | 20 ns | 45 ns | 4.5A | 1.3V | 20V | 1.3V | 20V | 2 N-Channel (Dual) | 34m Ω @ 4A, 4.5V | 1.3V @ 250μA | 17nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg405dy-datasheets-7457.pdf | 16-SOIC (0.154, 3.90mm Width) | Lead Free | 111 Weeks | 36V | 13V | 45Ohm | no | unknown | 16 | 2 | SPST | 22V | 7V | 45Ohm | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIAA40DJ-T1-GE3 | Vishay Siliconix | $0.48 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siaa40djt1ge3-datasheets-7512.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 19.2W Tc | 30A | 60A | 0.016Ohm | 5 mJ | N-Channel | 1200pF @ 20V | 12.5m Ω @ 5A, 10V | 2.4V @ 250μA | 30A Tc | 12nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 1μA | 8 | 930.006106mg | 36V | 13V | 35Ohm | 8 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | 2.54mm | 8 | 400mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 1 | 35Ohm | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS862ADN-T1-GE3 | Vishay Siliconix | $0.76 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis862adnt1ge3-datasheets-8231.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 60V | 3.6W Ta 39W Tc | N-Channel | 1235pF @ 30V | 7.2mOhm @ 10A, 10V | 2.5V @ 250μA | 15.8A Ta 52A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG180AP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg180aa-datasheets-7546.pdf | 14-DIP (0.300, 7.62mm) | 19.56mm | 3.05mm | 7.87mm | 15V | 1.5mA | 1.620005g | 10Ohm | 14 | 825mW | 2 | 14-DIP | 400 ns | 200 ns | 15V | Dual | 10Ohm | 10Ohm | 1:1 | SPST - NC | ±15V | 10nA | 21pF 17pF | 400ns, 200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9433BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si9433bdyt1e3-datasheets-9829.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 40 ns | 55ns | 30 ns | 65 ns | 4.5A | 12V | SILICON | 20V | -1.5V | 1.3W Ta | 0.04Ohm | -20V | P-Channel | 40m Ω @ 6.2A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 14nC @ 4.5V | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200AAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg200aaa883-datasheets-7600.pdf | 14-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 15V | 2mA | 16 Weeks | 1.200007g | 36V | 13V | 70Ohm | 14 | 825mW | 2 | 825mW | 2 | 14-CERDIP | 1 μs | 425 ns | 22V | 15V | Dual | 7V | 2 | 2 | 70Ohm | 1:1 | SPST - NC | ±15V | 2nA | 9pF 9pF | 440ns, 340ns | -10pC | -90dB @ 1MHz |
