Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF644SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf644spbf-datasheets-3712.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 280MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 4V | 3.1W Ta 125W Tc | 56A | 550 mJ | 250V | N-Channel | 1300pF @ 25V | 4 V | 280m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2037DS-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg2037dst1-datasheets-7724.pdf | SOT-23-8 | 1μA | 8 | 5.5V | 1.8V | 5Ohm | 8 | no | unknown | 2 | 20nA | e0 | TIN LEAD | YES | 515mW | DUAL | GULL WING | 240 | 3V | 0.635mm | 8 | 1 | 30 | Multiplexer or Switches | 3/5V | 2 | Not Qualified | 35 ns | 31 ns | Single | SEPARATE OUTPUT | 5Ohm | 0.3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 1.8V~5.5V | SPST - NO | 1nA | 15pF 17pF | 30ns, 22ns | 1pC | 200m Ω (Max) | -67dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3430DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3430dvt1e3-datasheets-4579.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 170mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.14W | 1 | FET General Purpose Power | 9 ns | 11ns | 11 ns | 16 ns | 1.8A | 20V | SILICON | 2V | 1.14W Ta | 100V | N-Channel | 2 V | 170m Ω @ 2.4A, 10V | 2V @ 250μA (Min) | 1.8A Ta | 6.6nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG304AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg304aak883-datasheets-7746.pdf | 14-CDIP (0.300, 7.62mm) | 14 | 36V | 13V | 50Ohm | 14 | no | No | 2 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 14 | 825mW | Multiplexer or Switches | +-15V | 38535Q/M;38534H;883B | 22V | 7V | -15V | 2 | SEPARATE OUTPUT | 50Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 1nA | 14pF 14pF | 250ns, 150ns | 30pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4464DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4464dyt1e3-datasheets-3300.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 240mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | 10 ns | 12ns | 15 ns | 15 ns | 1.7A | 20V | SILICON | SWITCHING | 200V | 200V | 1.5W Ta | N-Channel | 240m Ω @ 2.2A, 10V | 4V @ 250μA | 1.7A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG390BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg390bdje3-datasheets-5350.pdf | 16-DIP (0.300, 7.62mm) | 15V | 1mA | 8 Weeks | 36V | 13V | 50Ohm | 16 | no | unknown | 230μA | 470mW | 16 | 2 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 50Ohm | 50Ohm | 2:1 | SPDT | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 10pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD19P06-60L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqd19p0660lge3-datasheets-7043.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252, (D-Pak) | 60V | 46W Tc | 46mOhm | P-Channel | 1490pF @ 25V | 55mOhm @ 19A, 10V | 2.5V @ 250μA | 20A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 50μA | 16 | 8 Weeks | 665.986997mg | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | TIN LEAD | YES | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 12/+-15V | 4 | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ850EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqj850ept1ge3-datasheets-8440.pdf | PowerPAK® SO-8 | 1.267mm | Lead Free | 12 Weeks | 506.605978mg | Unknown | 23mOhm | 8 | No | 1 | Single | 45W | 1 | 175°C | PowerPAK® SO-8 | 1.225nF | 21 ns | 15ns | 8 ns | 22 ns | 24A | 20V | 60V | 2V | 45W Tc | 19mOhm | 60V | N-Channel | 1225pF @ 30V | 2 V | 23mOhm @ 10.3A, 10V | 2.5V @ 250μA | 24A Tc | 30nC @ 10V | 23 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407DN-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 8 Weeks | 1.182714g | 44V | 7.5V | 100Ohm | 28 | unknown | 1 | YES | 450mW | QUAD | J BEND | 8 | DPDT | Multiplexer or Switches | 2 | Not Qualified | 600 ns | 300 ns | 20V | 350 ns | Dual, Single | 5V | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 8pF 65pF | 200ns, 150ns | 15pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR870ADP-T1-RE3 | Vishay Siliconix | $28.21 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishay-sir870adpt1re3-datasheets-3418.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 104W Tc | 5.5mOhm | N-Channel | 2866pF @ 50V | 6.6mOhm @ 20A, 10V | 3V @ 250μA | 60A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 44V | 1μA | 35Ohm | 16 | 900mW | 4 | 16-CERDIP | 175 ns | 145 ns | 15V | Dual, Single | 35Ohm | 35Ohm | 5V~44V ±5V~20V | 1:1 | SPST - NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3493DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3493ddvt1ge3-datasheets-1115.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | 6 | 14 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 2W | 1 | 150°C | R-PDSO-G6 | 25 ns | 95 ns | -7.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 3.6W Tc | 8A | 0.024Ohm | -20V | P-Channel | 1825pF @ 10V | 24m Ω @ 7.5A, 4.5V | 1V @ 250μA | 8A Tc | 30nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | 16-CDIP (0.300, 7.62mm) | 19.305mm | 16 | 12 Weeks | 12V | 3V | 29Ohm | 16 | no | unknown | 1 | DUAL | NOT SPECIFIED | 5V | 16 | 4 | DIFFERENTIAL MULTIPLEXER | NOT SPECIFIED | 900mW | Multiplexer or Switches | 0.7mA | 2 | Not Qualified | 6V | 5V | 3V | -5V | 8 | 29Ohm | 70 dB | BREAK-BEFORE-MAKE | 40ns | 55ns | 2V~12V ±3V~6V | 0.03A | 4:1 | SP4T | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR122DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir122dpt1re3-datasheets-3093.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5.2W Ta 65.7W Tc | N-Channel | 1950pF @ 40V | 7.4mOhm @ 10A, 10V | 3.8V @ 250μA | 16.7A Ta 59.6A Tc | 44nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDQ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 172.98879mg | 12V | 2.7V | 17Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | YES | 450mW | GULL WING | 0.635mm | 16 | Multiplexer or Switches | 3/12/+-5V | 4 | 280MHz | 50 ns | 35 ns | 6V | Dual, Single | 3V | SEPARATE OUTPUT | 17Ohm | BREAK-BEFORE-MAKE | 85ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8413DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8413dbt1e1-datasheets-3663.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | 4 | 33 Weeks | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 4 | 1 | 40 | 1.47W | 1 | Other Transistors | 31 ns | 50ns | 50 ns | 105 ns | -6.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.47W Ta | 0.063Ohm | P-Channel | 48m Ω @ 1A, 4.5V | 1.4V @ 250μA | 4.8A Ta | 21nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417LEDY-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg419ledqt1ge3-datasheets-7465.pdf | 8-SOIC (0.154, 3.90mm Width) | 19 Weeks | 1 | 8-SO | 9Ohm | 3V~16V ±3V~8V | 1:1 | SPST | 10nA | 11pF 32pF | 40ns, 35ns | 26pC | -72dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR165DP-T1-GE3 | Vishay Siliconix | $1.34 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir165dpt1ge3-datasheets-3889.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 69.4W Tc | P-Channel | 4930pF @ 15V | 4.6mOhm @ 15A, 10V | 2.3V @ 250μA | 60A Tc | 138nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2535EDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg2733edqt1ge3-datasheets-3597.pdf | 10-VFDFN Exposed Pad | 3mm | 10 | 18 Weeks | 2 | YES | DUAL | NO LEAD | NOT SPECIFIED | 3V | 0.5mm | 5.5V | 1 | NOT SPECIFIED | 2 | S-PDSO-N10 | 120MHz | 500mOhm | 70 dB | 0.06Ohm | 60ns | 80ns | 2:1 | 1.65V~5.5V | SPDT | 78ns, 58ns | 60m Ω | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7434ADP-T1-RE3 | Vishay Siliconix | $22.56 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7434adpt1re3-datasheets-4338.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 250V | 5W Ta 54.3W Tc | N-Channel | 600pF @ 125V | 150mOhm @ 3.7A, 10V | 4V @ 250μA | 3.7A Ta 12.3A Tc | 16.5nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4053EEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.8mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4053eeqt1ge3-datasheets-7535.pdf | 16-WFQFN | 2.6mm | 16 | 16 Weeks | 78Ohm | unknown | 3 | YES | QUAD | NO LEAD | NOT SPECIFIED | 5V | 0.4mm | 1 | NOT SPECIFIED | 3 | R-XQCC-N16 | 930MHz | -5V | 78Ohm | 49 dB | 0.91Ohm | 97ns | 86ns | 3V~16V ±3V~8V | 2:1 | SPDT | 1nA | 2pF 3.1pF | 75ns, 88ns | 0.3pC | 910m Ω | -105dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9520STRLPBF | Vishay Siliconix | $2.87 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9520spbf-datasheets-1890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 600mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 390pF | 9.6 ns | 29ns | 25 ns | 21 ns | -6.8A | 20V | 100V | 100V | 3.7W Ta 60W Tc | 600mOhm | P-Channel | 390pF @ 25V | 4 V | 600mOhm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9233EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.1mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9233edyge3-datasheets-1801.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 3mm | 8 | 19 Weeks | 2 | YES | DUAL | GULL WING | NOT SPECIFIED | 3V | 0.65mm | 5.5V | 1 | NOT SPECIFIED | 2 | S-PDSO-G8 | 25Ohm | 1:1 | 2.7V~5.5V | SPST - NO | 100pA | 3.8pF | 75ns, 50ns | -0.78pC | 400m Ω | -108dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Not Qualified | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 56A | 60V | N-Channel | 870pF @ 25V | 100m Ω @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201HSDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 10mA | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg201hsdqt1e3-datasheets-3678.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 16.5V | Lead Free | 10mA | 16 | 12 Weeks | 1.627801g | 25V | 13V | 90Ohm | 16 | yes | No | 4 | 4.5mA | e3 | Matte Tin (Sn) | 470mW | 15V | DG201 | 16 | 1 | 470mW | Multiplexer or Switches | SPST | 60 ns | 50 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | 85 dB | 0.75Ohm | BREAK-BEFORE-MAKE | NC | 10.8V~16.5V ±15V | 1:1 | SPST - NC | 1nA | 5pF | 60ns, 50ns | -5pC | 1.5 Ω | -100dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFUC20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | No SVHC | 4.4Ohm | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 2A | 8A | 74 mJ | 600V | N-Channel | 350pF @ 25V | 4.4 Ω @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418AK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | 8-CDIP (0.300, 7.62mm) | 12 Weeks | 1 | 8-CERDIP | 35Ohm | 12V ±15V | 1:1 | SPST - NO | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP25N40D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp25n40dge3-datasheets-3763.pdf | TO-220-3 | 3 | 13 Weeks | 3 | AVALANCHE RATED | No | SINGLE | 3 | 1 | FET General Purpose Power | 21 ns | 57ns | 37 ns | 40 ns | 25A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 278W Tc | TO-220AB | 78A | 0.17Ohm | 556 mJ | N-Channel | 1707pF @ 100V | 170m Ω @ 13A, 10V | 5V @ 250μA | 25A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2002 | /files/vishaysiliconix-dg442dyt1-datasheets-7418.pdf | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 100μA | 36V | 13V | 85Ohm | 16 | 900mW | 4 | 16-CERDIP | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | 85Ohm | 85Ohm | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 250ns, 120ns | -1pC | 4Ohm (Max) | -100dB @ 1MHz |
