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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Output Type | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Neg Supply Voltage-Max (Vsup) | Neg Supply Voltage-Min (Vsup) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG441LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | 5.08mm | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg441ldy-datasheets-2707.pdf | 16-CDIP (0.300, 7.62mm) | 19.305mm | 16 | 12V | 2.7V | 30Ohm | 16 | no | ALSO OPERATES WITH 2.7V TO 12V SINGLE SUPPLY | unknown | 4 | NO | DUAL | NOT SPECIFIED | 5V | 16 | 1 | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | 280MHz | 6V | 3V | -5V | SEPARATE OUTPUT | 30Ohm | 68 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 55ns | 83ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP21N80AE-GE3 | Vishay Siliconix | $4.13 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp21n80aege3-datasheets-6479.pdf | TO-220-3 | 14 Weeks | TO-220AB | 800V | 32W Tc | N-Channel | 1388pF @ 100V | 235mOhm @ 11A, 10V | 4V @ 250μA | 17.4A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9263DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg9263dy-datasheets-2747.pdf | 8-SOIC (0.154, 3.90mm Width) | no | unknown | 8 | 2 | 60Ohm | 1:1 | 2.7V~12V | SPST - NO | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP120N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp120n60ege3-datasheets-6775.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 179W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM184BEC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR210PBF | Vishay Siliconix | $1.95 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | 200V | 2.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | No | 1 | Single | 25W | 1 | D-Pak | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | 200V | 4V | 2.5W Ta 25W Tc | 310 ns | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM182BXC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 18 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irlu110pbf-datasheets-8636.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 540mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | 1 | Single | 2.5W | 1 | FET General Purpose Power | 9.3 ns | 47ns | 17 ns | 16 ns | 4.3A | 10V | SILICON | DRAIN | SWITCHING | 100V | 2V | 2.5W Ta 25W Tc | N-Channel | 250pF @ 25V | 540m Ω @ 2.6A, 5V | 2V @ 250μA | 4.3A Tc | 6.1nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM301BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | CDIP | 36V | 13V | 22V | 7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM60030E_GE3 | Vishay Siliconix | $2.06 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm60030ege3-datasheets-9119.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 80V | 80V | 375W Tc | 120A | 250A | 0.0032Ohm | 245 mJ | N-Channel | 12000pF @ 25V | 3.2m Ω @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9461DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg9461dvt1e3-datasheets-6647.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 60Ohm | 8 | no | unknown | 1 | e0 | TIN LEAD | 400mW | DUAL | GULL WING | 240 | 3V | 8 | 1 | 30 | 400mW | Multiplexer or Switches | 3/5V | Not Qualified | 75 ns | 50 ns | Single | 2 | 1 | 60Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG100N60E-GE3 | Vishay Siliconix | $8.06 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg100n60ege3-datasheets-9782.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 208W Tc | N-Channel | 1851pF @ 100V | 100mOhm @ 13A, 10V | 5V @ 250μA | 30A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM306BCC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2009 | 18 Weeks | 36V | 13V | 14 | 22V | 7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-2n7002t1e3-datasheets-0519.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 1.437803g | Unknown | 7.5Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | 15A | e3 | 60V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 200mW | 1 | FET General Purpose Powers | 150°C | 7 ns | 11 ns | 115mA | 20V | SILICON | SWITCHING | 2.1V | 200mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 2.1 V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 92042012A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | 2.54mm | Non-RoHS Compliant | 2016 | 20-LCC | 8.89mm | 8.89mm | 20 | 1 | YES | QUAD | NO LEAD | NOT SPECIFIED | 15V | 20 | 5V | 8 | SINGLE-ENDED MULTIPLEXER | NOT SPECIFIED | 1 | S-XQCC-N20 | -15V | 100Ohm | 75 dB | 15Ohm | -20V | -5V | 225ns | 8:1 | ±15V | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH20N50E-T1-GE3 | Vishay Siliconix | $3.93 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh20n50et1ge3-datasheets-1970.pdf | 8-PowerTDFN | 18 Weeks | 500V | 174W Tc | N-Channel | 2063pF @ 100V | 147m Ω @ 10A, 10V | 4V @ 250μA | 22A Tc | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8768901VA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | CMOS | Non-RoHS Compliant | CDIP | 18 | 36V | 13V | No | 1 | e0 | Tin/Lead (Sn/Pb) - hot dipped | NO | DUAL | THROUGH-HOLE | 15V | 2.54mm | 18 | MILITARY | 125°C | -55°C | 8 | SINGLE-ENDED MULTIPLEXER | Multiplexer or Switches | +-15V | 8mA | R-XDIP-T18 | 38535Q/M;38534H;883B | 22V | 7V | -15V | 500Ohm | BREAK-BEFORE-MAKE | 0.02A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2334DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2334dst1ge3-datasheets-1710.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 15 Weeks | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 30 | 1.3W | 1 | FET General Purpose Powers | 10ns | 8 ns | 4.9A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 400mV | 1.3W Ta 1.7W Tc | 0.044Ohm | N-Channel | 634pF @ 15V | 400 mV | 44m Ω @ 4.2A, 4.5V | 1V @ 250μA | 4.9A Tc | 10nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 86716022A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 20 | 4 | YES | QUAD | NO LEAD | 15V | 1.27mm | 20 | MILITARY | 125°C | -55°C | SPST | Multiplexer or Switches | +-15V | Not Qualified | S-XQCC-N20 | 38535Q/M;38534H;883B | -15V | SEPARATE OUTPUT | 75Ohm | BREAK-BEFORE-MAKE | 65ns | NC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA483ADJ-T1-GE3 | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia483adjt1ge3-datasheets-3182.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 30V | 3.4W Ta 17.9W Tc | P-Channel | 950pF @ 15V | 20mOhm @ 5A, 10V | 2.5V @ 250μA | 10.6A Ta 12A Tc | 26nC @ 10V | 4.5V 10V | +16V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1408EN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.95mm | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg1408eent1ge4-datasheets-9160.pdf | 16-VQFN Exposed Pad | 4mm | Lead Free | 16 | 3.2Ohm | unknown | 1 | YES | QUAD | NO LEAD | 5V | 0.65mm | 8 | SINGLE-ENDED MULTIPLEXER | 1 | 46MHz | -5V | 4.7Ohm | 60 dB | 0.2Ohm | 340ns | 390ns | 4.5V~24V ±4.5V~16.5V | 8:1 | 200pA | 14pF 89pF | 150ns, 120ns | 100pC | 200m Ω | -64dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHJ10N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihj10n60et1ge3-datasheets-3641.pdf | 8-PowerTDFN | 1.267mm | 14 Weeks | 1 | 89W | 150°C | 16 ns | 31 ns | 10A | 30V | 89W Tc | 600V | N-Channel | 784pF @ 100V | 360m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | -1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 1.627801g | 18V | 10V | 45Ohm | 16 | No | 470mW | DG612 | 4 | 470mW | 4 | 16-PDIP | 500MHz | SPST | 50 ns | 35 ns | 15V | Dual, Single | 10V | 4 | 4 | 45Ohm | 10V~18V ±10V~15V | 1:1 | SPST - NO | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2Ohm | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfbc40lcpbf-datasheets-4396.pdf | 600V | 6.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | No SVHC | 1.2Ohm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 12 ns | 20ns | 17 ns | 27 ns | 6.2A | 30V | 600V | 600V | 4V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1100pF @ 25V | 4 V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 39nC @ 10V | 1.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG613DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500MHz | Lead Free | 1μA | 16 | 665.986997mg | No SVHC | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | No | 4 | 5μA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG613 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 1 | Digital | DPDT, SPST | 35 ns | 25 ns | 15V | 12V | Dual, Single | 10V | -3V | 4 | 45Ohm | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | 50ns | 10V~18V ±10V~15V | 2:2 | DPDT | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N04-5M6_T4GE3 | Vishay Siliconix | $1.58 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n045m6ge3-datasheets-3962.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 1 | Single | TO-252AA | 9 ns | 19ns | 5 ns | 13 ns | 50A | 20V | 40V | 71W Tc | 5.6mOhm | N-Channel | 4000pF @ 25V | 5.6mOhm @ 20A, 10V | 3.5V @ 250μA | 50A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 547.485991mg | 12V | 2.7V | 50Ohm | 16 | 650mW | DG413 | 4 | 650mW | 4 | 16-SOIC | 280MHz | SPST | 50 ns | 35 ns | 6V | Dual, Single | 3V | 4 | 4 | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD12N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TA | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd12n50ege3-datasheets-7651.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | 1.437803g | Unknown | 3 | YES | GULL WING | 1 | 1 | R-PSSO-G2 | 10.5A | SILICON | DRAIN | SWITCHING | 550V | 500V | 4V | 114W Tc | N-Channel | 886pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 10.5A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2018DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg2019dnt1e4-datasheets-5316.pdf | 16-VFQFN Exposed Pad | 3mm | 900μm | 3mm | 1μA | 16 | 57.09594mg | No SVHC | 5.5V | 1.8V | 8Ohm | 16 | yes | No | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 850mW | QUAD | 260 | 3V | 0.5mm | DG2018 | 16 | 2 | 40 | 850mW | Multiplexers or Switches | 3/5V | 2 | 180MHz | 48 ns | 33 ns | Single | 8 | 4 | 8Ohm | 54 dB | 3Ohm | BREAK-BEFORE-MAKE | 35ns | 65ns | 2:2 | 1.8V~5.5V | DPDT | 1nA | 7.5pF | 48ns, 33ns | -2.46pC | 600m Ω | -72dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIB5N65APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfib5n65apbf-datasheets-8166.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 60W | 1 | TO-220-3 | 1.417nF | 14 ns | 20ns | 18 ns | 34 ns | 5.1A | 30V | 650V | 4V | 60W Tc | 930mOhm | N-Channel | 1417pF @ 25V | 930mOhm @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 48nC @ 10V | 930 mΩ | 10V | ±30V |
