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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SQP120N10-3M8_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp120n103m8ge3-datasheets-5976.pdf | TO-220-3 | 12 Weeks | TO-220AB | 100V | 250W Tc | N-Channel | 7230pF @ 25V | 3.8mOhm @ 20A, 10V | 3.5V @ 250μA | 120A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG506AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | 5.92mm | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg506aak883-datasheets-2716.pdf | 16-CDIP (0.300, 7.62mm) | 36.83mm | 28 | 400Ohm | 28 | No | 1 | e0 | TIN LEAD | DUAL | 225 | 15V | 2.54mm | 28 | 16 | SINGLE-ENDED MULTIPLEXER | 30 | 1.2W | 1 | MIL-STD-883 | 22V | -15V | 16 | 400Ohm | 68 dB | 14.4Ohm | 16:1 | ±15V | 1nA | 6pF 45pF | 1.5μs, 1μs | 6pC | 24 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG25N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihg25n50ege3-datasheets-6287.pdf | TO-247-3 | 3 | 18 Weeks | 145mOhm | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 19 ns | 36ns | 29 ns | 57 ns | 26A | 20V | SILICON | SWITCHING | 250W Tc | TO-247AC | 50A | 273 mJ | 500V | N-Channel | 1980pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG509AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg509aak883-datasheets-2733.pdf | 16-CDIP (0.300, 7.62mm) | 31 Weeks | 25V | 16 | No | 1.3mA | 2 | 16-CERDIP | 22V | 400Ohm | 4:1 | SP4T | ±15V | 1nA | 6pF 12pF | 1.5μs, 1μs | 6pC | 24Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB21N65EF-GE3 | Vishay Siliconix | $21.50 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp21n65efge3-datasheets-6506.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 21 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 21A | 650V | 208W Tc | N-Channel | 2322pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 106nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9262DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.75mm | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg9263dy-datasheets-2747.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.9mm | 8 | no | unknown | 2 | e0 | TIN LEAD | YES | DUAL | GULL WING | 240 | 3V | 8 | 1 | 30 | Multiplexer or Switches | 3/5V | 2 | Not Qualified | R-PDSO-G8 | SEPARATE OUTPUT | 60Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | 2.7V~12V | SPST - NC | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7110DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7110dnt1e3-datasheets-6972.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 4.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 12 ns | 10ns | 10 ns | 36 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 1.5W Ta | 60A | 20V | N-Channel | 5.3m Ω @ 21.1A, 10V | 2.5V @ 250μA | 13.5A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9431DV-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg9431edyge3-datasheets-8821.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 1μA | 6 | 19.986414mg | 12V | 2.7V | 30Ohm | 6 | no | No | 1 | e0 | TIN LEAD | 400mW | DUAL | GULL WING | 240 | 3V | 0.95mm | 6 | 1 | 30 | Multiplexer or Switches | 3/5V | 75 ns | 50 ns | Single | 2 | 1 | 30Ohm | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR420PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr420pbf-datasheets-7930.pdf | 500V | 2.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 12 Weeks | 1.437803g | Unknown | 3Ohm | 3 | No | 24A | 500V | 1 | Single | 42W | 1 | D-Pak | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.4A | 20V | 500V | 4V | 2.5W Ta 42W Tc | 520 ns | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM190BEC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | Lead Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9214PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9214trpbf-datasheets-8548.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3Ohm | 3 | No | 1 | Single | 50W | 1 | D-Pak | 220pF | 11 ns | 14ns | 17 ns | 20 ns | 2.7A | 20V | 250V | -4V | 50W Tc | 220 ns | 3Ohm | -250V | P-Channel | 220pF @ 25V | -4 V | 3Ohm @ 1.7A, 10V | 4V @ 250μA | 2.7A Tc | 14nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM187BCC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP30N60E-E3 | Vishay Siliconix | $5.02 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp30n60ee3-datasheets-9594.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 17 Weeks | 6.000006g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-220AB | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | 600V | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM306BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2009 | CDIP | 36V | 13V | 22V | 7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB065N60E-GE3 | Vishay Siliconix | $6.50 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb065n60ege3-datasheets-9834.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | D2PAK (TO-263) | 600V | 250W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM307BCC01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishay-sjm307bcc01-datasheets-0217.pdf | 36V | 13V | 14 | 2 | 22V | 7V | 4 | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihg22n50de3-datasheets-1811.pdf | TO-247-3 | Lead Free | 3 | 13 Weeks | 38.000013g | 3 | No | SINGLE | 1 | 312W | 1 | 21 ns | 42ns | 40 ns | 47 ns | 22A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 312W Tc | TO-247AC | 67A | N-Channel | 1938pF @ 100V | 230m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 86716012A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | CMOS | Non-RoHS Compliant | SMD/SMT | 20 | 4 | YES | QUAD | NO LEAD | 15V | 1.27mm | 20 | MILITARY | 125°C | -55°C | SPST | Multiplexer or Switches | +-15V | Not Qualified | S-XQCC-N20 | 38535Q/M;38534H;883B | -15V | SEPARATE OUTPUT | 75Ohm | BREAK-BEFORE-MAKE | 50ns | NC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUG90090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sug90090ege3-datasheets-2051.pdf | TO-247-3 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 200V | 395W Tc | N-Channel | 5220pF @ 100V | 9.5m Ω @ 20A, 10V | 4V @ 250μA | 100A Tc | 129nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM188BXA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP33N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp33n60efge3-datasheets-2335.pdf | TO-220-3 | 3 | 14 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 28 ns | 43ns | 48 ns | 161 ns | 33A | 20V | SILICON | SWITCHING | 600V | 600V | 4V | 278W Tc | TO-220AB | 0.098Ohm | N-Channel | 3454pF @ 100V | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 155nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8976001XA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA445EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sia445edjtt1ge3-datasheets-3296.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 19W Tc | 12A | 50A | 0.0167Ohm | P-Channel | 2180pF @ 10V | 16.7m Ω @ 7A, 4.5V | 1.2V @ 250μA | 12A Tc | 69nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2731DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2731dqt1e3-datasheets-4047.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 1mA | 10 | No SVHC | 4.3V | 1.6V | 400mOhm | 10 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2731 | 10 | 1 | 40 | 320mW | Multiplexer or Switches | Not Qualified | 110 ns | 30 ns | Single | 4 | 2 | 450mOhm | 300mOhm | 75 dB | 0.03Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.65V~4.3V | SPDT | 1nA | 104pF | 110ns, 30ns | 9pC | 30m Ω | -75dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG15N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg15n60ege3-datasheets-3891.pdf | TO-247-3 | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 180W Tc | TO-247AC | 15A | 39A | 0.28Ohm | 102 mJ | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG611DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500MHz | Lead Free | 1μA | 16 | 665.986997mg | No SVHC | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | No | 4 | 5nA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 1.27mm | DG611 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 515-3V | SPST | 35 ns | 25 ns | 15V | 12V | Dual, Single | 10V | -3V | 4 | SEPARATE OUTPUT | 45Ohm | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | 50ns | NC | 10V~18V ±10V~15V | 1:1 | SPST - NC | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg30n60ege3-datasheets-4581.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | 600V | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4157DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 50nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4157dnt1e4-datasheets-4690.pdf | 6-UFDFN | 500nA | 12 Weeks | 5.5V | 1.65V | 1.2Ohm | 6 | yes | No | 160mW | DG4157 | 6 | 1 | 117MHz | 55 ns | 27 ns | Single | 1.2Ohm | 2:1 | 1.65V~5.5V | SPDT | 2nA | 20pF | 37ns, 23ns | 50pC | 120m Ω (Max) | -63dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR420APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irfr420apbf-datasheets-7258.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 12 Weeks | 1.437803g | Unknown | 300mOhm | 3 | AVALANCHE RATED | No | e3 | MATTE TIN | GULL WING | 260 | 3 | 1 | Single | 40 | 83W | 1 | R-PSSO-G2 | 8.1 ns | 12ns | 13 ns | 16 ns | 3.3A | 30V | SILICON | DRAIN | SWITCHING | 4.5V | 83W Tc | 500V | N-Channel | 340pF @ 25V | 3 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3.3A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2005DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 20nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2005dqt1e3-datasheets-5288.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | Lead Free | 1μA | 8 | 139.989945mg | 5.5V | 1.8V | 2.5Ohm | 8 | yes | unknown | 2 | 20nA | e3 | MATTE TIN | 320mW | DUAL | GULL WING | 260 | 2V | 0.65mm | DG2005 | 8 | 1 | 40 | 320mW | Not Qualified | SPST | 28 ns | 22 ns | Single | 2 | 2.5Ohm | 61 dB | 37ns | 47ns | 1:1 | 1.8V~5.5V | SPST - NO/NC | 1nA | 51pF | 28ns, 22ns | 1pC | -67dB @ 1MHz |
