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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFU9220PBF | Vishay Siliconix | $5.57 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | 1.5Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | SILICON | DRAIN | SWITCHING | 200V | 2.5W Ta 42W Tc | -200V | P-Channel | 340pF @ 25V | 1.5 Ω @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SQM30010EL_GE3 | Vishay Siliconix | $2.53 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm30010elge3-datasheets-4472.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 30V | 375W Tc | N-Channel | 28000pF @ 15V | 1.35mOhm @ 40A, 10V | 2.5V @ 250μA | 120A Tc | 450nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP25N15-52_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp25n1552ge3-datasheets-4940.pdf | TO-220-3 | 12 Weeks | TO-220AB | 150V | 107W Tc | N-Channel | 2360pF @ 25V | 52mOhm @ 15A, 10V | 4V @ 250μA | 25A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA240N60E-GE3 | Vishay Siliconix | $0.60 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha240n60ege3-datasheets-5258.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 600V | 31W Tc | N-Channel | 783pF @ 100V | 240mOhm @ 5.5A, 10V | 5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5499DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5499dct1ge3-datasheets-5811.pdf | 8-SMD, Flat Lead | 8 | Single | 2.5W | 1206-8 ChipFET™ | 1.29nF | -6A | 5V | 8V | 2.5W Ta 6.2W Tc | 36mOhm | 8V | P-Channel | 1290pF @ 4V | 36mOhm @ 5.1A, 4.5V | 800mV @ 250μA | 6A Tc | 35nC @ 8V | 36 mΩ | 1.5V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR882ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir882adpt1ge3-datasheets-8411.pdf | PowerPAK® SO-8 | Lead Free | 14 Weeks | 506.605978mg | Unknown | 8.7mOhm | 8 | No | 1 | Single | 5.4W | 1 | PowerPAK® SO-8 | 1.975nF | 11 ns | 12ns | 9 ns | 34 ns | 60A | 20V | 100V | 1.2V | 5.4W Ta 83W Tc | 7.2mOhm | N-Channel | 1975pF @ 50V | 8.7mOhm @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 60nC @ 10V | 8.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIR818DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sir818dpt1ge3-datasheets-0329.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | 2.8mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.2W | 1 | FET General Purpose Power | R-PDSO-C5 | 14 ns | 15ns | 10 ns | 36 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 69W Tc | 30V | N-Channel | 3660pF @ 15V | 2.8m Ω @ 20A, 10V | 2.4V @ 250μA | 50A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIHA11N80AE-GE3 | Vishay Siliconix | $1.74 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha11n80aege3-datasheets-1156.pdf | TO-220-3 Full Pack | TO-220 Full Pack | 800V | 31W Tc | N-Channel | 804pF @ 100V | 450mOhm @ 5.5A, 10V | 4V @ 250μA | 8A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH186N60EF-T1GE3 | Vishay Siliconix | $4.07 |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh186n60eft1ge3-datasheets-1744.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 114W Tc | N-Channel | 1081pF @ 100V | 193mOhm @ 9.5A, 10V | 5V @ 250μA | 16A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG052N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg052n60efge3-datasheets-2023.pdf | TO-247-3 | TO-247AC | 600V | 278W Tc | N-Channel | 3380pF @ 100V | 52mOhm @ 23A, 10V | 5V @ 250μA | 48A Tc | 101nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA24DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sira24dpt1ge3-datasheets-3329.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 5W | 150°C | 12 ns | 18 ns | 44.5A | 62.5W Tc | 25V | N-Channel | 2650pF @ 10V | 1.4m Ω @ 15A, 10V | 2.1V @ 250μA | 60A Tc | 26nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4835DDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4835ddyt1ge3-datasheets-7773.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 18MOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | 44 ns | 100ns | 15 ns | 28 ns | -13A | 25V | SILICON | SWITCHING | 30V | -3V | 2.5W Ta 5.6W Tc | -30V | P-Channel | 1960pF @ 15V | 18m Ω @ 10A, 10V | 3V @ 250μA | 13A Tc | 65nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||
| SQJA90EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja90ept1ge3-datasheets-4914.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 68W | 1 | 175°C | R-PSSO-G4 | 16 ns | 26 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 0.0076Ohm | 57 mJ | 80V | N-Channel | 3500pF @ 25V | 7.6m Ω @ 10A, 10V | 3.5V @ 250μA | 60A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR1N60ATRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 7Ohm | 3 | Tin | No | 1 | Single | 36W | 1 | D-Pak | 229pF | 9.8 ns | 14ns | 20 ns | 18 ns | 1.4A | 30V | 600V | 36W Tc | 7Ohm | N-Channel | 229pF @ 25V | 7Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 7 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SQD10N30-330H_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqd10n30330hge3-datasheets-5998.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 107W | 175°C | 10 ns | 20 ns | 10A | 30V | 107W Tc | 300V | N-Channel | 2190pF @ 25V | 330m Ω @ 14A, 10V | 4.4V @ 250μA | 10A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF710STRLPBF | Vishay Siliconix | $3.60 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf710strlpbf-datasheets-8568.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 3.1W Ta 36W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQM40N10-30_GE3 | Vishay Siliconix | $1.87 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40n1030ge3-datasheets-9456.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | 107W | 1 | TO-263 (D2Pak) | 3.345nF | 12 ns | 5ns | 5 ns | 23 ns | 40A | 20V | 100V | 3V | 107W Tc | 30mOhm | N-Channel | 3345pF @ 25V | 30mOhm @ 15A, 10V | 3.5V @ 250μA | 40A Tc | 62nC @ 10V | 30 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIHFU9220-GE3 | Vishay Siliconix | $0.65 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 8 Weeks | 3 | No | TO-251AA | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | 200V | 2.5W Ta 42W Tc | P-Channel | 3400pF @ 25V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4431BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4431bdyt1e3-datasheets-6831.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 10 ns | 10ns | 10 ns | 70 ns | -5.7A | 20V | SILICON | 30V | 30V | -3V | 1.5W Ta | 0.03Ohm | P-Channel | 30m Ω @ 7.5A, 10V | 3V @ 250μA | 5.7A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI2301CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2301cdst1ge3-datasheets-6412.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 860mW | 1 | Other Transistors | 150°C | 11 ns | 35ns | 35 ns | 30 ns | -2.3A | 8V | SILICON | SWITCHING | 20V | -1V | 860mW Ta 1.6W Tc | -20V | P-Channel | 405pF @ 10V | 112m Ω @ 2.8A, 4.5V | 1V @ 250μA | 3.1A Tc | 10nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||
| SISA72ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa72adnt1ge3-datasheets-8158.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 40V | 3.7W Ta 52W Tc | N-Channel | 2530pF @ 20V | 3.25mOhm @ 10A, 10V | 2.4V @ 250μA | 25.4A Ta 94A Tc | 50nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS70DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss70dnt1ge3-datasheets-8710.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 125V | 5.1W Ta 65.8W Tc | N-Channel | 535pF @ 62.5V | 29.8mOhm @ 8.5A, 10V | 4.5V @ 250μA | 8.5A Ta 31A Tc | 15.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS32LDN-T1-GE3 | Vishay Siliconix | $0.97 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss32ldnt1ge3-datasheets-8645.pdf | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 80V | 5W Ta 65.7W Tc | N-Channel | 2550pF @ 40V | 7.2mOhm @ 15A, 10V | 2.5V @ 250μA | 17.4A Ta 63A Tc | 57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N024-09P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n02409pe3-datasheets-9627.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 2 | yes | EAR99 | e3 | MATTE TIN OVER NICKEL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 6.5W | 1 | FET General Purpose Power | Not Qualified | 10ns | 12 ns | 25 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 6.5W Ta 39.5W Tc | 100A | 0.017Ohm | 22V | N-Channel | 1300pF @ 10V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 49A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SQD45P03-12-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd45p0312ge3-datasheets-8650.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 30V | 71W Tc | P-Channel | 3495pF @ 15V | 10mOhm @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 83nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHLZ34S-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz34spbf-datasheets-5430.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | D2PAK (TO-263) | 60V | 3.7W Ta 88W Tc | N-Channel | 1600pF @ 25V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9610SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf9610spbf-datasheets-1353.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3W | 1 | D2PAK | 170pF | 8 ns | 15ns | 8 ns | 1 ns | -1.8A | 20V | 200V | -4V | 3W Ta 20W Tc | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3Ohm @ 900mA, 10V | 4V @ 250μA | 1.8A Tc | 11nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHP12N65E-GE3 | Vishay Siliconix |
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download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp12n65ege3-datasheets-2547.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 6.000006g | 3 | No | 1 | Single | 156W | 1 | 16 ns | 19ns | 18 ns | 35 ns | 12A | 20V | SILICON | SWITCHING | 650V | 156W Tc | TO-220AB | 28A | 226 mJ | 700V | N-Channel | 1224pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHW61N65EF-GE3 | Vishay Siliconix | $11.41 |
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download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw61n65efge3-datasheets-2858.pdf | TO-247-3 | 17 Weeks | 650V | 520W Tc | N-Channel | 7407pF @ 100V | 47m Ω @ 30.5A, 10V | 4V @ 250μA | 64A Tc | 371nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4420BDY-T1-GE3 | Vishay Siliconix |
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download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4420bdyt1e3-datasheets-8758.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.4W | 1 | FET General Purpose Power | 15 ns | 11ns | 11 ns | 40 ns | 13.5A | 20V | SILICON | 1.4W Ta | 9.5A | 30V | N-Channel | 8.5m Ω @ 13.5A, 10V | 3V @ 250μA | 9.5A Ta | 50nC @ 10V | 4.5V 10V | ±20V |
