Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Max Supply Current | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | Capacitance @ Frequency | Applications | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Logic IC Type | Supplier Device Package | -3db Bandwidth | Input Capacitance | Memory Size | Number of Bits | Turn On Delay Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Logic Function | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Diode Element Material | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Reverse Standoff Voltage | Reference Voltage | Voltage Tol-Max | Working Test Current | Collector Emitter Voltage (VCEO) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Collector Base Voltage (VCBO) | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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2SA1972,T6WNLF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1972fj-datasheets-1044.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 400V | 500mA | 10μA ICBO | PNP | 140 @ 20mA 5V | 35MHz | 1V @ 10mA, 100mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1428-Y,T2F(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1428ot2clafm-datasheets-1005.pdf | SC-71 | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SB1457(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sb1457t6cnoaf-datasheets-1081.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 100V | 2A | 10μA ICBO | PNP | 2000 @ 1A 2V | 50MHz | 1.5V @ 1mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SB1375,CLARIONF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sb1375clarionfm-datasheets-1110.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 60V | 3A | 10μA ICBO | PNP | 100 @ 500mA 5V | 9MHz | 1.5V @ 200mA, 2A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2235-Y(T6CN,A,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2655-Y(T6CN,A,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3225,T6ALPSF(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3225t6alpsfm-datasheets-1160.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 40V | 2A | 10μA ICBO | NPN | 500 @ 400mA 1V | 220MHz | 500mV @ 1mA, 300mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC2482(T6TOJS,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2482fjtnfm-datasheets-1138.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 300V | 100mA | 1μA ICBO | NPN | 30 @ 20mA 10V | 50MHz | 1V @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC6040,T2Q(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc6040t2qj-datasheets-1199.pdf | SC-71 | 1W | 800V | 1A | 100μA ICBO | NPN | 60 @ 100mA 5V | 1V @ 100mA, 800mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC4604,T6F(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4604fj-datasheets-1200.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 3A | 100nA ICBO | NPN | 120 @ 100mA 2V | 100MHz | 500mV @ 75mA, 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5172(YAZK,Q,M) | Toshiba Semiconductor and Storage | $0.16 |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5172yazkqm-datasheets-1246.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 400V | 5A | 20μA ICBO | NPN | 20 @ 500mA 5V | 1V @ 250mA, 2A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC3328-Y,T6CKF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc3328ot6kehfm-datasheets-1163.pdf | TO-226-3, TO-92-3 Long Body | LSTM | 900mW | 80V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TC7PCI3215MT,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 200μA | RoHS Compliant | 2013 | 20-UFQFN Exposed Pad | 20 | 12 Weeks | 11.5Ohm | PCI Express® | QUAD | NO LEAD | 3.3V | 0.5mm | 4 | Bus Driver/Transceivers | 3.3V | Not Qualified | R-PQCC-N20 | BUS DRIVER | 11.5GHz | Demultiplexer, Multiplexer | Single | 13.5Ohm | 2:1 | 3V~3.6V | SPDT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TC7WB67CL8X,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 2013 | 8-UFLGA | 1.6mm | 500μm | 1.6mm | 10μA | 12 Weeks | 5.5V | 1.65V | 30Ohm | 8 | 300mW | 2 | MP8 | 2 | 10Ohm | 1:1 | 1.65V~5.5V | SPST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SD2206(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2206t6cnoaf-datasheets-6695.pdf | TO-226-3, TO-92-3 Long Body | 3 | No | Single | 900mW | 100V | 2A | 100V | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TC7W53FU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 8-TSSOP, 8-MSOP (0.110, 2.80mm Width) | 12 Weeks | unknown | 2 | SINGLE-ENDED MULTIPLEXER | 100Ohm | 2V~6V ±2V~6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HDEPV21GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG06ACA | 5°C~55°C | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 8TB | 3.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N44FU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | YES | GULL WING | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 200mW Ta | 0.1A | 7Ohm | 2 N-Channel (Dual) | 8.5pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N7002BFE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 1.6mm | 550μm | 1.2mm | 16 Weeks | 150mW | 2 | 200mA | 10V | 60V | 60V | 2 N-Channel (Dual) | 17pF @ 25V | 2.1 Ω @ 500mA, 10V | 3.1V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/toshibasemiconductorandstorage-ssm6n7002kfulf-datasheets-7489.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | yes | AEC-Q101 | 285mW | GULL WING | 2 | R-PDSO-G6 | 300mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 285mW | 0.3A | 1.75Ohm | 2 N-Channel (Dual) | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 0.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPHR6503PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | 175°C | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 1mm | 12 Weeks | 8 | 1 | 960mW | 175°C | 8-SOP Advance (5x5) | 10nF | 36 ns | 100 ns | 150A | 20V | 30V | 1.1V | 960mW Ta 170W Tc | 410μOhm | 30V | N-Channel | 10000pF @ 15V | 0.65mOhm @ 50A, 10V | 2.1V @ 1mA | 150A Tc | 110nC @ 10V | 650 μΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K333R,LF | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | SOT-23-3 Flat Leads | 3 | 16 Weeks | unknown | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1W | 1 | R-PDSO-F3 | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 6A | 0.028Ohm | 30V | N-Channel | 436pF @ 15V | 28m Ω @ 5A, 10V | 2.5V @ 100μA | 6A Ta | 3.4nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J15FU,LF | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SC-70, SOT-323 | 12 Weeks | unknown | 100mA | 30V | 150mW Ta | P-Channel | 9.1pF @ 3V | 12 Ω @ 10mA, 4V | 1.7V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF2S30FS,L3M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s30fsl3m-datasheets-2654.pdf | SOD-923 | 12 Weeks | EAR99 | 7pF @ 1MHz | General Purpose | No | 28V | 23V Max | 1 | 23V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N48FU,LF | Toshiba Semiconductor and Storage | $0.58 |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | 6 | No | GULL WING | 2 | 2 | 35 ns | 180 ns | 100mA | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 300mW | 0.1A | 5.4Ohm | 2 N-Channel (Dual) | 15.1pF @ 3V | 3.2 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF5A5.6CJE,LM | Toshiba Semiconductor and Storage | $0.27 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5a56cjelm-datasheets-4312.pdf | SOT-553 | 12 Weeks | EAR99 | 29pF @ 1MHz | General Purpose | No | 5.3V | 4 | 3.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8401(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2006 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 20V 12V | 1W | N and P-Channel | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA 5.5A | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF2S8.2FS,L3M | Toshiba Semiconductor and Storage | $0.15 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s82fsl3m-datasheets-8306.pdf | SOD-923 | 2 | 12 Weeks | EAR99 | 20pF @ 1MHz | General Purpose | UNIDIRECTIONAL | YES | DUAL | FLAT | 1 | R-PDSO-F2 | SINGLE | SILICON | No | 7.7V | 6.5V Max | 1 | 8.2V | 6.09% | 5mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N48FU,RF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 6 | unknown | 300mW | GULL WING | 300mW | 2 | R-PDSO-G6 | 100mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 5.4Ohm | 30V | 2 N-Channel (Dual) | 15.1pF @ 3V | 3.2 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF3A3.3FV,L3F | Toshiba Semiconductor and Storage | $0.23 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3a33fvl3f-datasheets-5710.pdf | SOT-723 | 12 Weeks | 115pF @ 1MHz | General Purpose | No | 3.1V | 2 |
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