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ContactToshiba Semiconductor and Storage(13104)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Capacitance @ Frequency | Applications | Polarity | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Memory Size | Rise Time | Fall Time (Typ) | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Working Voltage | Gain Bandwidth Product | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Breakdown Voltage | Power - Max | Diode Element Material | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Peak Pulse Power | Max Breakdown Voltage | Direction | Number of Unidirectional Channels | Power - Peak Pulse | Bidirectional Channels | Reference Voltage | Working Test Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Voltage - Supply, Single (V+) | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2SC2229-Y,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2229omitifm-datasheets-1094.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 800mW | 150V | 50mA | 100nA ICBO | NPN | 70 @ 10mA 5V | 120MHz | 500mV @ 1mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SA1020-Y(T6OMI,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sa1020ofj-datasheets-0961.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 50V | 2A | 1μA ICBO | PNP | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2235-Y(T6ND,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2235ot6asnfm-datasheets-1115.pdf | TO-226-3, TO-92-3 Long Body | TO-92MOD | 900mW | 120V | 800mA | 100nA ICBO | NPN | 80 @ 100mA 5V | 120MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2655-Y(T6ND1,AF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2655yt6canofm-datasheets-1130.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 50V | 2A | 1μA ICBO | NPN | 70 @ 500mA 2V | 100MHz | 500mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4793,WNLF(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc4793fm-datasheets-6713.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 230V | 1A | 1μA ICBO | NPN | 100 @ 100mA 5V | 100MHz | 1.5V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5171,MATUDQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5171qj-datasheets-1207.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 180V | 2A | 5μA ICBO | NPN | 100 @ 100mA 5V | 200MHz | 1V @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5930(TPF2,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5930t2mitumfm-datasheets-1208.pdf | SC-71 | 1W | 600V | 1A | 100μA ICBO | NPN | 40 @ 200mA 5V | 1V @ 75mA, 600mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC5201,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc5201t6murafj-datasheets-1204.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 600V | 50mA | 1μA ICBO | NPN | 100 @ 20mA 5V | 1V @ 500mA, 20mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC4116SU-Y,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | SC-70, SOT-323 | 100mW | 2SC4116 | 80MHz | 100mW | 50V | 50V | 250mV | 150mA | 5V | 70 | 100nA ICBO | NPN | 70 @ 2mA 6V | 250mV @ 10mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2705-Y(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 150°C TJ | Tape & Box (TB) | 1 (Unlimited) | 200MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sc2705yte6fm-datasheets-0730.pdf | TO-226-3, TO-92-3 Long Body | 3 | unknown | 800mW | 800mW | 1 | 150V | 1V | 50mA | 50mA | 150V | 5V | 100nA ICBO | NPN | 120 @ 10mA 5V | 1V @ 1mA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2257,NIKKIQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2257kehinqj-datasheets-6764.pdf | TO-220-3 Full Pack | 2W | 100V | 3A | 10μA ICBO | NPN | 2000 @ 2A 2V | 1.5V @ 1.5mA, 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC4W53FU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 8-TSSOP, 8-MSOP (0.110, 2.80mm Width) | 12 Weeks | 2 | 160Ohm | 3V~18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HDEPV11GEA51F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | SATA III | MG06ACA | 5°C~55°C | 1 (Unlimited) | RoHS Compliant | 6 Weeks | 5V 12V | 8TB | 3.5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P47NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 16 Weeks | 6 | 1W | 1W | 4A | 8V | 20V | -20V | 2 P-Channel (Dual) | 290pF @ 10V | 95m Ω @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L14FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | EAR99 | YES | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.15W | 20V | METAL-OXIDE SEMICONDUCTOR | 150mW Ta | 0.8A | N and P-Channel | 90pF 110pF @ 10V | 240m Ω @ 500mA, 4.5V, 300m Ω @ 400mA, 4.5V | 1V @ 1mA | 800mA Ta 720mA Ta | 2nC, 1.76nC @ 4.5V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L61NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Base | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2015 | 6-WDFN Exposed Pad | 6 | 12 Weeks | unknown | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 4A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.033Ohm | N and P-Channel | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH5200FNH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 12 Weeks | 8 | 8-SOP Advance (5x5) | 2.2nF | 26A | 250V | 78W Tc | N-Channel | 2200pF @ 100V | 52mOhm @ 13A, 10V | 4V @ 1mA | 26A Tc | 22nC @ 10V | 52 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K341R,LF | Toshiba Semiconductor and Storage | $0.26 |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | DUAL | 1 | R-PDSO-F3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.2W Ta | 6A | 24A | 0.036Ohm | 28.9 mJ | N-Channel | 550pF @ 10V | 36m Ω @ 5A, 10V | 2.5V @ 100μA | 6A Ta | 9.3nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K15AMFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SOT-723 | 3 | 18 Weeks | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | 100mA | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | 150mW Ta | 0.1A | 6Ohm | N-Channel | 13.5pF @ 3V | 3.6 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S5.1FS,L3M | Toshiba Semiconductor and Storage | $0.15 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s51fsl3m-datasheets-2687.pdf | SOD-923 | 12 Weeks | EAR99 | 45pF @ 1MHz | General Purpose | No | 4.8V | 1.5V Max | 1 | 1.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8201(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 2003 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 20V | 330mW | 2 N-Channel (Dual) | 590pF @ 10V | 49m Ω @ 1.5A, 4.5V | 1.2V @ 200μA | 3A | 7.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2B6M4SL,L3F | Toshiba Semiconductor and Storage | $0.06 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | AVALANCHE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2b6m4sll3f-datasheets-3741.pdf | 0201 (0603 Metric) | 300FF | 2 | 12 Weeks | 2 | yes | LOW CAPACITANCE | 0.2pF @ 1MHz | General Purpose | DUAL | Single | 1 | 5.5V | SILICON | No | 5.6V | 2A 8/20μs | 5.5V Max | 25V | 2A | 5.5V | 30W | Bidirectional | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8212-H(TE12LQ,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2006 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-SOP (5.5x6.0) | 30V | 450mW | 2 N-Channel (Dual) | 840pF @ 10V | 21mOhm @ 3A, 10V | 2.3V @ 1mA | 6A | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF5A5.6FUTE85LF | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 125°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5a56fute85lf-datasheets-9089.pdf | 5-TSSOP, SC-70-5, SOT-353 | 12 Weeks | EAR99 | 65pF @ 1MHz | General Purpose | Unidirectional | 200mW | 4 | Voltage Reference Diodes | 2.5V | 5.3V | No | 2.5V | 4 | 5.6V | 5mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCL4203(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 4-XFLGA | 4 | No | 500mW | 85ns | 210 ns | 12V | 2 N-Channel (Half Bridge) | 685pF @ 10V | 1.2V @ 200μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF5G6M4N,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df5g6m4nlf-datasheets-1364.pdf | 5-XFDFN | 12 Weeks | 0.2pF @ 1MHz | General Purpose | No | 5.6V | 2A 8/20μs | 15V | 5.5V Max | 5 | 30W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8052-H(T2L1,VM | Toshiba Semiconductor and Storage | $0.90 |
Min: 1 Mult: 1 |
download | U-MOSVI-H | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-PowerVDFN | 12 Weeks | EAR99 | 40V | 1.6W Ta 30W Tc | N-Channel | 2110pF @ 10V | 11.3m Ω @ 10A, 10V | 2.3V @ 200μA | 20A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S8.2ASL,L3F | Toshiba Semiconductor and Storage | $0.17 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s56asll3f-datasheets-2826.pdf | 0201 (0603 Metric) | 12 Weeks | 20pF @ 1MHz | General Purpose | No | 7.7V | 6.5V Max | 1 | 6.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J325F,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 270pF | 12 Weeks | Single | 2A | 8V | 20V | 600mW Ta | -20V | P-Channel | 270pF @ 10V | 150m Ω @ 1A, 4.5V | 2A Ta | 4.6nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF2S6M4SL,L3F | Toshiba Semiconductor and Storage | $0.26 |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df2s6m4sll3f-datasheets-5447.pdf | 0201 (0603 Metric) | 12 Weeks | 0.35pF @ 1MHz | General Purpose | No | 5.6V | 2A | 15V | 5.5V Max | 1 | 30W |
