Toshiba Semiconductor and Storage(13104)

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Part Status Type Series Mount Mounting Type Operating Temperature Packaging Moisture Sensitivity Level (MSL) Termination Max Operating Temperature Min Operating Temperature Technology Operating Mode RoHS Status Published Datasheet Package / Case Capacitance Lead Free Number of Terminations Factory Lead Time Weight Approval Agency Number of Pins Pbfree Code ECCN Code Additional Feature Radiation Hardening Reach Compliance Code HTS Code Capacitance @ Frequency JESD-609 Code Terminal Finish Applications Polarity Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Operating Temperature (Max) Operating Temperature (Min) Supply Voltage-Min (Vsup) Number of Channels Element Configuration Time@Peak Reflow Temperature-Max (s) Power Dissipation Number of Elements Subcategory JESD-30 Code Supplier Device Package Input Capacitance Max Input Current Turn On Delay Time Optoelectronic Device Type Forward Current-Max On-State Current-Max Isolation Voltage-Max Rise Time Fall Time (Typ) Turn-Off Delay Time Continuous Drain Current (ID) Gate to Source Voltage (Vgs) Max Reverse Leakage Current Zener Voltage Working Voltage Transistor Element Material Configuration Case Connection Transistor Application Polarity/Channel Type Drain to Source Voltage (Vdss) DS Breakdown Voltage-Min FET Technology Breakdown Voltage Voltage - Isolation Power - Max Power Dissipation-Max Power Line Protection Voltage - Breakdown (Min) Current - Peak Pulse (10/1000μs) Voltage - Clamping (Max) @ Ipp Voltage - Reverse Standoff (Typ) Unidirectional Channels Clamping Voltage Peak Pulse Current Reverse Standoff Voltage Peak Pulse Power Direction Number of Unidirectional Channels Power - Peak Pulse Bidirectional Channels Reference Voltage Voltage Tolerance Voltage - Forward (Vf) (Typ) Current - Output High, Low Rise / Fall Time (Typ) Propagation Delay tpLH / tpHL (Max) Common Mode Transient Immunity (Min) Pulse Width Distortion (Max) Voltage - Output Supply Current - Peak Output Drain Current-Max (Abs) (ID) Pulsed Drain Current-Max (IDM) Drain-source On Resistance-Max Avalanche Energy Rating (Eas) FET Type Input Capacitance (Ciss) (Max) @ Vds Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs FET Feature Rds On Max Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
SSM6L35FU(TE85L,F) SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage
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download Surface Mount Surface Mount -55°C~150°C TJ Cut Tape (CT) 1 (Unlimited) ENHANCEMENT MODE RoHS Compliant 2015 6-TSSOP, SC-88, SOT-363 12 Weeks EAR99 200mW 2 Dual Other Transistors 175 ns 251 ns 100mA -1V N-CHANNEL AND P-CHANNEL 20V METAL-OXIDE SEMICONDUCTOR 0.18A N and P-Channel 9.5pF @ 3V 3 Ω @ 50mA, 4V 1V @ 1mA 180mA 100mA Logic Level Gate, 1.2V Drive
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TPC8221-H,LQ(S TPC8221-H,LQ(S Toshiba Semiconductor and Storage
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download DTMOSIV-H Through Hole Through Hole 150°C TJ Tube 1 (Unlimited) MOSFET (Metal Oxide) RoHS Compliant 2014 TO-247-3 16 Weeks 25A 600V 180W Tc N-Channel 2400pF @ 300V 125m Ω @ 7.5A, 10V 3.5V @ 1.2mA 25A Ta 40nC @ 10V 10V ±30V
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