Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Height | Operating Supply Voltage | Color | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | Approval Agency | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Max Current Rating | Capacitance @ Frequency | Applications | Reference Standard | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Sensitivity (dBm) | Input Capacitance | Sensitivity | Data Rate (Max) | Current - Receiving | Data Rate | Output Voltage | Output Current | Forward Current | Output Type | Max Input Current | Turn On Delay Time | Optoelectronic Device Type | On-State Current-Max | Viewing Angle | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | DS Breakdown Voltage-Min | Breakdown Voltage | Power - Output | Voltage - Isolation | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Unidirectional Channels | Reverse Standoff Voltage | Reverse Breakdown Voltage | Direction | Reference Voltage | Voltage Tol-Max | Working Test Current | Dynamic Impedance-Max | Voltage - Forward (Vf) (Typ) | Current - Output High, Low | Rise / Fall Time (Typ) | Current - DC Forward (If) (Max) | Propagation Delay tpLH / tpHL (Max) | Common Mode Transient Immunity (Min) | Pulse Width Distortion (Max) | Voltage - Output Supply | Current - Peak Output | Output Current per Channel | CCT (K) | RF Family/Standard | Serial Interfaces | Protocol | Thermal Resistance of Package | Lumens/Watt @ Current - Test | Current - Test | Current - Max | CRI (Color Rendering Index) | Flux @ 85°C, Current - Test | Flux @ 25°C, Current - Test | Inputs - Side 1/Side 2 | Current - Output / Channel | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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TK040Z65Z,S1F | Toshiba Semiconductor and Storage | $10.27 |
Min: 1 Mult: 1 |
download | DTMOSVI | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-4 | 16 Weeks | 650V | 360W Tc | N-Channel | 6250pF @ 300V | 40m Ω @ 28.5A, 10V | 4V @ 2.85mA | 57A Ta | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP152(E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~100°C | Tube | 1 (Unlimited) | Optical Coupling | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp152tple-datasheets-2675.pdf | 6-SOIC (0.179, 4.55mm Width), 5 Leads | 12 Weeks | CQC, cUL, UL | 1 | TRANSISTOR OUTPUT OPTOCOUPLER | 22 ns | 3750Vrms | 1.57V | 2A 2A | 18ns 22ns | 15mA | 170ns, 190ns | 20kV/μs | 50ns | 10V~30V | 2.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK3R1A04PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Through Hole | 175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 Full Pack | 12 Weeks | TO-220SIS | 40V | 36W Tc | N-Channel | 4670pF @ 20V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500μA | 82A Tc | 63.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP5774(E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~110°C | Tube | Optical Coupling | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp5774tpe-datasheets-3384.pdf | 6-SOIC (0.295, 7.50mm Width) | 12 Weeks | CQC, cUR, UR, VDE | 1 | LOGIC IC OUTPUT OPTOCOUPLER | 5000Vrms | 1.65V | 1.2A 1.2A | 15ns 8ns | 8mA | 150ns, 150ns | 35kV/μs | 50ns | 10V~30V | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM5N15FE(TE85L,F) | Toshiba Semiconductor and Storage | $0.69 |
Min: 1 Mult: 1 |
download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SOT-553 | 12 Weeks | EAR99 | unknown | 2 | Dual | FET General Purpose Powers | 50 ns | 180 ns | 100mA | 1.5V | 30V | 150mW Ta | 0.1A | N-Channel | 7.8pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DF3A6.2F(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Zener | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-df3a62fte85lf-datasheets-0134.pdf | TO-236-3, SC-59, SOT-23-3 | 55pF | EAR99 | 55pF @ 1MHz | General Purpose | 150mW | 1 | Voltage Reference Diodes | 6.2V | No | 5.8V | 2 | 3V | 6.2V | 6.5% | 5mA | 30Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK10S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 410pF | 7ns | 4 ns | 10A | 20V | 40V | 25W Tc | N-Channel | 410pF @ 10V | 28mOhm @ 5A, 10V | 3V @ 1mA | 10A Ta | 10nC @ 10V | 28 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TC35661SBG-203,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TxRx Only | -40°C~85°C | Tape & Reel (TR) | 3 (168 Hours) | 2.4GHz | RoHS Compliant | 2016 | 64-FBGA | 3.3V | 30μA | 16 Weeks | 64 | I2C, I2S, SPI, UART | No | 1.8V~3.3V | -91 dBm | -90dBm | 2Mbps | 63mA | 2dBm | Bluetooth | I2C, SPI, UART | Bluetooth v3.0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R503NC,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 2.23nF | 17 Weeks | 2.5mOhm | 8 | Single | 35W | 9ns | 24 ns | 68 ns | 40A | 20V | 700mW Ta 35W Tc | 30V | N-Channel | 2230pF @ 15V | 2.5m Ω @ 20A, 10V | 2.3V @ 500μA | 40A Ta | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TL1WK-LW1,L | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | LETERAS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 0.026Lx0.026W 0.65mmx0.65mm | 2A (4 Weeks) | 0.015 0.39mm | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tl1wklw1l-datasheets-1141.pdf | 2-SMD, No Lead | White, Warm | 180mA | 2.8V | 3000K | 17°C/W | 113 lm/W | 60mA | 80 | 19lm 17lm~23lm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK35N65W,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | No | 1 | Single | TO-247 | 4.1nF | 70 ns | 30ns | 8 ns | 150 ns | 35A | 30V | 650V | 270W Tc | 68mOhm | 650V | N-Channel | 4100pF @ 300V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 35A Ta | 100nC @ 10V | 80 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TL1L4-DW0,LCS | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | LETERAS™ | Surface Mount | Tape & Reel (TR) | 0.138Lx0.138W 3.50mmx3.50mm | 2A (4 Weeks) | 0.085 2.15mm | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tl1l4dw0l-datasheets-1753.pdf | 1414 (3535 Metric) | White, Cool | 3535 | 120° | 2.8V | 6500K | 5°C/W | 148 lm/W | 350mA | 1.5A | 70 | 145lm 130lm~160lm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH3R003PL,LQ | Toshiba Semiconductor and Storage | $4.24 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 16 Weeks | 8-SOP Advance (5x5) | 30V | 90W Tc | N-Channel | 3825pF @ 15V | 4.2mOhm @ 44A, 4.5V | 2.1V @ 300μA | 88A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TL3GB-LL1,L | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | LETERAS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 0.118Lx0.118W 3.00mmx3.00mm | 2A (4 Weeks) | 0.030 0.77mm | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tl3gbll1l-datasheets-4903.pdf | 1212 (3030 Metric) | White, Warm | unknown | 8541.40.20.00 | 200mA | SINGLE COLOR LED | 5.76V | 2700K | 17°C/W | 106 lm/W | 100mA | 80 | 61lm 56lm~66lm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH6R004PL,LQ | Toshiba Semiconductor and Storage | $0.68 |
Min: 1 Mult: 1 |
download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 16 Weeks | 40V | 1.8W Ta 81W Tc | N-Channel | 2700pF @ 20V | 6m Ω @ 24.5A, 10V | 2.4V @ 200μA | 87A Ta 49A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TL1L3-NW0,L | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | LETERAS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 0.138Lx0.138W 3.50mmx3.50mm | 2A (4 Weeks) | 0.099 2.52mm | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tl1l3nw0l-datasheets-5363.pdf | 1414 (3535 Metric) | White, Cool | unknown | 8541.40.20.00 | 1A | SINGLE COLOR LED | 100° | 2.85V | 5000K | 5°C/W | 145 lm/W | 350mA | 70 | 145lm Typ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK5A53D(STA4,Q,M) | Toshiba Semiconductor and Storage | $6.22 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 540pF | 18ns | 8 ns | 5A | 30V | 525V | 35W Tc | N-Channel | 540pF @ 25V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 1.5 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP2108(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp2108f-datasheets-4072.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | No | 4.5V~20V | 2 | 5Mbps | 20mA | Push-Pull, Totem Pole | 10mA | 250 ns | 75ns | 30 ns | 250 ns | 2500Vrms | 5V | Unidirectional | 1.65V | 30ns 30ns | 250ns, 250ns | 10kV/μs | 25mA | 2/0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ30S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | No | AEC-Q101 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 43ns | 118 ns | 30A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 68W Tc | 60A | 0.028Ohm | 71 mJ | P-Channel | 3950pF @ 10V | 21.8m Ω @ 15A, 10V | 3V @ 1mA | 30A Ta | 80nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP2160(TP,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C | Cut Tape (CT) | 1 (Unlimited) | DC | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp2160f-datasheets-4344.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | yes | UL APPROVED | No | 60mW | 2.7V~5.5V | 2 | 2 | 20MBd | Push-Pull, Totem Pole | 55 ns | LOGIC IC OUTPUT OPTOCOUPLER | 0.01A | 15 ns | 40 ns | 2500Vrms | Unidirectional | 1.55V | 15ns 15ns | 25mA | 40ns, 40ns | 20kV/μs | 10mA | 2/0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31A60W,S4VX | Toshiba Semiconductor and Storage | $1.97 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 3nF | 16 Weeks | Single | 45W | TO-220SIS | 3nF | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 600V | 45W Tc | 73mOhm | 600V | N-Channel | 3000pF @ 300V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 86nC @ 10V | Super Junction | 88 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP2630(MAT,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK72E12N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | Single | 255W | 33ns | 37 ns | 120 ns | 72A | 20V | 255W Tc | 120V | N-Channel | 8100pF @ 60V | 4.4m Ω @ 36A, 10V | 4V @ 1mA | 72A Ta | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP250H(TP5,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | DC | 8-SMD, Gull Wing | 10V~30V | 1 | Push-Pull, Totem Pole | LOGIC IC OUTPUT OPTOCOUPLER | 3750Vrms | 1.57V | 50ns 50ns | 20mA | 500ns, 500ns | 40kV/μs | 1/0 | 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16A60W,S4VX | Toshiba Semiconductor and Storage | $2.52 |
Min: 1 Mult: 1 |
download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-220-3 Full Pack | 1.35nF | 16 Weeks | 40W | 25ns | 5 ns | 100 ns | 15.8A | 30V | 40W Tc | 600V | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP2361(TPL,E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C | Cut Tape (CT) | 1 (Unlimited) | DC | RoHS Compliant | 2015 | /files/toshibasemiconductorandstorage-tlp2361tple-datasheets-4887.pdf | 6-SOIC (0.179, 4.55mm Width), 5 Leads | 2.3mm | 12 Weeks | No | 20mW | 2.7V~5.5V | 1 | 20mW | 15MBd | 6V | 10mA | 2mA | Push-Pull, Totem Pole | 39 ns | LOGIC IC OUTPUT OPTOCOUPLER | 3 ns | 49 ns | 80 ns | 3750Vrms | Unidirectional | 1.5V | 3ns 3ns | 80ns, 80ns | 20kV/μs | 10mA | 1/0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK8A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $8.93 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 800pF | 20ns | 12 ns | 7.5A | 30V | 550V | 40W Tc | N-Channel | 800pF @ 25V | 1.07Ohm @ 3.8A, 10V | 4V @ 1mA | 7.5A Ta | 16nC @ 10V | 1.07 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP718(F) | Toshiba Semiconductor and Storage | $1.83 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp718f-datasheets-7914.pdf | 6-SOIC (0.268, 6.80mm Width) | 16 Weeks | 6 | No | 4.5V~20V | 1 | 5Mbps | 10mA | Push-Pull, Totem Pole | 10mA | 250 ns | 30ns | 30 ns | 250 ns | 5000Vrms | 5V | Unidirectional | 1.6V | 30ns 30ns | 20mA | 250ns, 250ns | 10kV/μs | 25mA | 1/0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK9A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.20 |
Min: 1 Mult: 1 |
download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 1.2nF | 25ns | 12 ns | 9A | 30V | 600V | 45W Tc | N-Channel | 1200pF @ 25V | 830mOhm @ 4.5A, 10V | 4V @ 1mA | 9A Ta | 24nC @ 10V | 830 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP104(E) | Toshiba Semiconductor and Storage | $0.77 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp104v4tple-datasheets-8166.pdf | 6-SOIC (0.179, 4.55mm Width), 5 Leads | 12 Weeks | 5 | No | 4.5V~30V | 1 | 80mW | 1Mbps | 8mA | 25mA | Open Collector | 550 ns | LOGIC IC OUTPUT OPTOCOUPLER | 400 ns | 3750Vrms | 5V | Unidirectional | 1.61V | 550ns, 400ns | 15kV/μs | 8mA | 1/0 |
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