Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Size / Dimension | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Capacitance | Input Current | Lead Free | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Interface | Pbfree Code | Impedance | Additional Feature | Radiation Hardening | Reach Compliance Code | Power Rating | Capacitance @ Frequency | Tolerance | Applications | Voltage | Surface Mount | Max Power Dissipation | Voltage - Supply | Base Part Number | Number of Channels | Element Configuration | Power Dissipation | Number of Elements | Supplier Device Package | Memory Size | Max Output Voltage | Output Voltage | Oscillator Type | Number of I/O | Memory Type | Peripherals | RAM Size | Forward Current | Output Type | Voltage - Load | Max Input Current | Forward Current-Max | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Zener Voltage | Logic Function | Configuration | Drain to Source Voltage (Vdss) | Test Current | Function | Output Configuration | Voltage - Isolation | Power - Max | Power Dissipation-Max | Power Line Protection | Voltage - Breakdown (Min) | Current - Peak Pulse (10/1000μs) | Voltage - Clamping (Max) @ Ipp | Voltage - Reverse Standoff (Typ) | Unidirectional Channels | ESD Protection | Power - Peak Pulse | Voltage Tolerance | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Forward (Vf) (Typ) | Rise / Fall Time (Typ) | Current - DC Forward (If) (Max) | Output Current per Channel | Current - Max | Current - Output / Channel | Voltage - Output (Max) | Speed - Read | Speed - Write | Impedance-Max | Current - Output | Drain to Source Breakdown Voltage | Core Processor | Voltage - Supply (Vcc/Vdd) | Program Memory Type | Core Size | Program Memory Size | Connectivity | Data Converter | Current Transfer Ratio (Min) | Current Transfer Ratio (Max) | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Voltage - Cutoff (VGS off) @ Id | Current - Drain (Idss) @ Vds (Vgs=0) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Motor Type - Stepper | Step Resolution | Motor Type - AC, DC | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Form Factor | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Mfr |
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TPN3300ANH,LQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpn3300anhlq-datasheets-9986.pdf | 8-PowerVDFN | 680pF | 12 Weeks | 8 | Single | 27W | 4.4ns | 3.8 ns | 15 ns | 9.4A | 20V | 700mW Ta 27W Tc | 100V | N-Channel | 880pF @ 50V | 33m Ω @ 4.7A, 10V | 4V @ 100μA | 9.4A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP570(MBS,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MUZ16V,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Zener | MUZ | Surface Mount | 150°C (TJ) | SC-70, SOT-323 | 35pF @ 1MHz | General Purpose | USM | No | 15.3V | 5.5A (8/20μs) | 27V (Typ) | 16V | 1 | 200W | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP781F(D4-LF7,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | 1 (Unlimited) | DC | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp781fyhtp7f-datasheets-7023.pdf | 4-SMD, Gull Wing | 1 | Transistor | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 50% @ 5mA | 600% @ 5mA | 3μs, 3μs | 400mV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4901,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | 200mW | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 30 @ 10mA, 5V | 200MHz, 250MHz | 300mV @ 250μA, 5mA | 4.7kOhms | 4.7kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP781F(Y-TP7,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~110°C | Tape & Reel (TR) | 1 (Unlimited) | DC | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp781fyhtp7f-datasheets-7023.pdf | 4-SMD, Gull Wing | 1 | Transistor | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 50% @ 5mA | 150% @ 5mA | 3μs, 3μs | 400mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2909,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | 200mW | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 70 @ 10mA, 5V | 200MHz | 300mV @ 250μA, 5mA | 47kOhms | 22kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP781(YH,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~110°C | 1 (Unlimited) | DC | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp781fyhtp7f-datasheets-7023.pdf | 4-DIP (0.300, 7.62mm) | NO | 1 | 1 | Transistor | 0.025A | 5000Vrms | 1.15V | 2μs 3μs | 60mA | 50mA | 80V | 75% @ 5mA | 150% @ 5mA | 3μs, 3μs | 400mV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2301,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-70, SOT-323 | SC-70 | 100 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 30 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 4.7 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP624F | Toshiba Semiconductor and Storage | $4.46 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~100°C | Tube | 1 (Unlimited) | DC | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp6244f-datasheets-3551.pdf | 4-DIP (0.300, 7.62mm) | 12 Weeks | unknown | NO | 1 | 1 | Transistor | 0.06A | 5000Vrms | 0.25W | 1.15V | 8μs 8μs | 60mA | 50mA | 55V | 100% @ 1mA | 1200% @ 1mA | 10μs, 8μs | 400mV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1904,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 | 200mW | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 80 @ 10mA, 5V | 250MHz | 300mV @ 250μA, 5mA | 47kOhms | 47kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TLP126(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~100°C | Tube | 1 (Unlimited) | AC, DC | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tlp126tprf-datasheets-5243.pdf | 6-SMD (4 Leads), Gull Wing | 1.6mA | Lead Free | 16 Weeks | No SVHC | 4 | UL RECOGNIZED | No | 7V | 200mW | 200mW | 1 | 80V | 80V | 50mA | Transistor | 50mA | 8μs | 8 μs | SINGLE | 3750Vrms | 400mV | 80V | 50mA | 1.15V | 8μs 8μs | 50mA | 100% @ 1mA | 1200% @ 1mA | 10μs, 8μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1105,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SC-75, SOT-416 | SSM | 100 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 80 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 2.2 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TMP86FHDMG(KYZ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | TLCS-870/C | Surface Mount | -40°C~85°C TA | Tray | 1 (Unlimited) | 16MHz | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tmp86fhdmgkyz-datasheets-7986.pdf | 30-LSSOP (0.220, 5.60mm Width) | I2C, UART, USART | TMP86 | 16kB | Internal | 24 | PWM, WDT | 512 x 8 | 870/C | 2.7V~5.5V | FLASH | 8-Bit | 16KB 16K x 8 | I2C, SEI, UART/USART | A/D 6x10b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4983FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 70 @ 10mA, 5V | 250MHz, 200MHz | 300mV @ 250μA, 5mA | 22kOhms | 22kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3320-BL(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 5-TSSOP, SC-70-5, SOT-353 | 52 Weeks | 5 | yes | unknown | 200mW | Dual | 14mA | -30V | 10V | N-Channel | 13pF @ 10V | 200mV @ 100nA | 6mA @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN4981FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 30 @ 10mA, 5V | 250MHz, 200MHz | 300mV @ 250μA, 5mA | 4.7kOhms | 4.7kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ27(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOD-123F | 12 Weeks | 30Ohm | ±10% | 700mW | Single | 10μA | 27V | 10mA | No | 30Ohm | 10μA @ 19V | 1V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1416,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 50 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 10 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ12(TE85L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 12V | SOD-123F | Lead Free | 2 | 30Ohm | No | 700mW | ±10% | 700mW | CRZ12 | Single | 700mW | 10μA | 12V | 10% | 30Ohm | 10μA @ 8V | 1V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2107MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Surface Mount | SOT-723 | VESM | 150 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 80 @ 10mA, 5V | 300mV @ 500μA, 5mA | 10 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62269FTG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 2014 | 48-WFQFN Exposed Pad | 16 Weeks | Parallel | General Purpose | 4.75V~5.25V | 10V~38V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 1.8A | Bipolar | 1 ~ 1/32 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1905FE,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
Automotive, AEC-Q101 | Surface Mount | SOT-563, SOT-666 | ES6 | 100mW | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 80 @ 10mA, 5V | 250MHz | 300mV @ 250μA, 5mA | 2.2kOhms | 47kOhms | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB67H400AFTG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 2015 | 48-WFQFN Exposed Pad | 12 Weeks | Parallel, PWM | General Purpose | 4.75V~5.25V | 10V~47V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 6A | Brushed DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MG08ADA800E | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
SATA III | MG08-D | 5°C ~ 55°C | 147.00mm x 101.85mm x 26.10mm | - | 5V, 12V | 8TB | Magnetic Disk (HDD) | - | - | - | 3.5" | Toshiba Semiconductor and Storage | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB6612FNG,C,8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -20°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | Power MOSFET | RoHS Compliant | 2007 | 24-LSSOP (0.220, 5.60mm Width) | 13 Weeks | Parallel | General Purpose | 2.7V~5.5V | TB6612 | 2.5V~13.5V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 1A | Brushed DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TDTC143Z,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
- | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 320 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 80 @ 10mA, 5V | 250 MHz | 300mV @ 500μA, 10mA | 4.7 kOhms | Toshiba Semiconductor and Storage | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB67B001FTG,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | Bipolar | RoHS Compliant | 36-VFQFN Exposed Pad | 12 Weeks | PWM | General Purpose | 4V~22V | Driver - Fully Integrated, Control and Power Stage | Half Bridge (3) | 3A | Multiphase | Brushless DC (BLDC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB67S111PG,HJ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Through Hole | -20°C~85°C TA | Tray | Not Applicable | Power MOSFET | RoHS Compliant | 16-DIP (0.300, 7.62mm) | 17 Weeks | Parallel | General Purpose | 4.75V~5.25V | 0V~80V | Driver | Half Bridge (2) | 1.5A | Unipolar | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TB62215AFTG,8,EL | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -20°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -20°C | Power MOSFET | RoHS Compliant | 2012 | /files/toshibasemiconductorandstorage-tb62215aftg8el-datasheets-9233.pdf | 48-VFQFN Exposed Pad | Parallel | General Purpose | 4.75V~5.25V | 48-QFN (7x7) | 10V~38V | AND | Driver - Fully Integrated, Control and Power Stage | Half Bridge (4) | 3A | Bipolar | 1, 1/2, 1/4 |
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