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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Power Gain | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | Min Breakdown Voltage | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Transistor Type | Nominal Vgs | Voltage - Test |
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| AFT09MS031NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 40V | 870MHz | ROHS3 Compliant | 2006 | TO-270AA | 10 Weeks | EAR99 | 8541.29.00.40 | e3 | Matte Tin (Sn) | YES | 260 | AFT09MS031 | 150°C | 40 | FET General Purpose Power | 17.2dB | Single | N-CHANNEL | 317W | METAL-OXIDE SEMICONDUCTOR | 31W | 500mA | LDMOS | 13.6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFM12U7X(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 520MHz | RoHS Compliant | 2009 | 4A | TO-271AA | unknown | 20W | 10.8dB | 4A | 10V | 20V | 12W | 750mA | N-Channel | 7.2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD54008L-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stevaltdr015v1-datasheets-4413.pdf | 3.1V | 5A | 8-PowerVDFN | Lead Free | 5 | 12 Weeks | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | HIGH RELIABILITY | No | e3 | MATTE TIN | 26.7W | QUAD | 260 | PD54008 | 14 | Single | 30 | 26.7W | 1 | FET General Purpose Power | S-PQCC-N5 | 5A | 15V | 15dB | SOURCE | AMPLIFIER | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 8W | 200mA | 5A | 25V | LDMOS | 7.5V | ||||||||||||||||||||||||||||||||
| BLP35M805Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.14GHz | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blp35m805z-datasheets-9812.pdf | 16-VDFN Exposed Pad | 13 Weeks | 18dB | 16-HVSON (6x4) | 750mW | 55mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP9G0722-20Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 400MHz~2.7GHz | /files/ampleonusainc-blp9g072220gz-datasheets-8338.pdf | SOT-1482-1 | 13 Weeks | 19dB | 43dBm | 1.4μA | 180mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD54008S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-pd54008e-datasheets-9060.pdf | 5A | PowerSO-10 Exposed Bottom Pad | 2 | 3 | EAR99 | HIGH RELIABILITY | 73W | DUAL | FLAT | NOT SPECIFIED | PD54008 | 10 | Single | NOT SPECIFIED | 73W | 1 | FET General Purpose Power | 11.5dB | Not Qualified | R-PDSO-F2 | 5A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 8W | 150mA | 5A | 25V | LDMOS | 7.5V | |||||||||||||||||||||||||||||||||||||
| MMRF1015NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 68V | 960MHz | ROHS3 Compliant | 2014 | TO-270-2 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | 260 | 40 | 18dB | 10W | 125mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD57006S-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd57006e-datasheets-3014.pdf | 1A | PowerSO-10 Exposed Bottom Pad | Lead Free | 2 | 4 | EAR99 | No | e3 | MATTE TIN | 20W | DUAL | FLAT | 250 | PD57006 | 10 | Single | 30 | 20W | 1 | FET General Purpose Power | R-PDSO-F2 | 1A | 20V | 15dB | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 6W | 65V | 70mA | 1A | 65V | LDMOS | 28V | ||||||||||||||||||||||||||||||||||
| MHT1008NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 28V | 2.4GHz~2.5GHz | ROHS3 Compliant | 2009 | /files/nxpusainc-mht1008nt1-datasheets-9790.pdf | PLD-1.5W | 10 Weeks | 18.6dB | 12.5W | LDMOS | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP7G22-10Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.14GHz | ROHS3 Compliant | 2011 | /files/nxpusainc-blp7g2210135-datasheets-7482.pdf | 12-VDFN Exposed Pad | 13 Weeks | BLP7G22 | 16dB | 12-HVSON (6x4) | 2W | 110mA | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC10G18XS-550AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1.805GHz~1.88GHz | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ampleonusainc-blc10g18xs550avtz-datasheets-9711.pdf | SOT-1258-4 | 13 Weeks | 16dB | 550W | 2.8μA | 800mA | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLSC9G2731XS-200Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 65V | 2.7GHz~3.1GHz | ROHS3 Compliant | SOT-1270-1 | 13 Weeks | 14dB | 200W | 2.8μA | 200mA | LDMOS | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD55008L-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | 40V | 5A | 8-PowerVDFN | Lead Free | 5 | 8 | EAR99 | HIGH RELIABILITY | 19.5W | QUAD | NO LEAD | NOT SPECIFIED | PD55008 | 5 | Single | NOT SPECIFIED | 19.5W | 1 | FET General Purpose Power | 19dB | Not Qualified | S-PQCC-N5 | 5A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 8W | 150mA | 5A | 40V | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||||||
| BF511,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 20V | 100MHz | DEPLETION MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-bf512235-datasheets-7325.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | BF511 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | 1.5dB | SILICON | SINGLE | AMPLIFIER | 0.25W | 20V | JUNCTION | 30mA | 5mA | 0.03A | 0.4 pF | N-Channel JFET | 10V | ||||||||||||||||||||||||||||||||||||||
| PD84008L-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 3 (168 Hours) | 150°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stevaltdr021v1-datasheets-8263.pdf | 7A | 8-PowerVDFN | 5 | 11 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | MATTE TIN | 26.7W | QUAD | 225 | PD84008 | 14 | Single | 26.7W | 1 | FET General Purpose Power | 15.5dB | S-PQCC-N5 | 7A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 2W | 250mA | 7A | 25V | LDMOS | 7.5V | ||||||||||||||||||||||||||||||||||||
| PD84001 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 3 (168 Hours) | 150°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd84001-datasheets-9552.pdf | 1.5A | TO-243AA | Lead Free | 4 | 11 Weeks | 130.492855mg | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 6W | DUAL | FLAT | 260 | PD84001 | 4 | Single | 30 | 6W | 1 | FET General Purpose Power | R-PDSO-F4 | 1.5A | 15V | 15dB | SOURCE | AMPLIFIER | N-CHANNEL | 18V | METAL-OXIDE SEMICONDUCTOR | 1W | 30dBm | 18V | 50mA | LDMOS | 7.5V | |||||||||||||||||||||||||||||||
| PD55003L-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55003le-datasheets-9726.pdf | 12V | 2.5A | 8-PowerVDFN | 5mm | 880μm | 5mm | Lead Free | 5 | 11 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | HIGH RELIABILITY | No | e3 | MATTE TIN | 14W | QUAD | 260 | PD55003 | 5 | Single | 30 | 1 | FET General Purpose Power | 19dB | S-PQCC-N5 | 34pF | 2.5A | 15V | 40V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 3W | 50mA | LDMOS | 5 V | 12.5V | |||||||||||||||||||||||||||
| AFM907NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | 136MHz~941MHz | ROHS3 Compliant | 2006 | /files/nxpusainc-afm907nt1-datasheets-9615.pdf | 16-VDFN Exposed Pad | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 8.4W | 10μA | 100mA | LDMOS | 10.8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G22LS-270GV,12 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf8g22ls270gvj-datasheets-8949.pdf | SOT-1244C | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | BLF8G22 | NOT SPECIFIED | 1 | 17.3dB | R-CDSO-G6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 80W | 2.4A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||
| BLF184XRGQ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 135V | 108MHz | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf184xrgj-datasheets-0342.pdf | SOT-1214C | 13 Weeks | 23.9dB | 700W | 100mA | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTFC270101M-V1-R1K | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 3 (168 Hours) | 65V | 2.17GHz | RoHS Compliant | 10-LDFN Exposed Pad | 12 Weeks | 20.5dB | PG-SON-10 | 2.4W | 120mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFM906NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | 136MHz~941MHz | RoHS Compliant | 2006 | /files/nxpusainc-afm906nt1-datasheets-9622.pdf | 16-VDFN Exposed Pad | 14 Weeks | EAR99 | compliant | 260 | 40 | 6.8W | 2μA | 100mA | LDMOS | 10.8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PN5033 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 20V | 1kHz | Non-RoHS Compliant | 2016 | /files/centralsemiconductorcorp-pn5033-datasheets-9625.pdf | TO-226-3, TO-92-3 (TO-226AA) | 8 Weeks | not_compliant | e0 | Tin/Lead (Sn/Pb) | NO | 125°C | FET General Purpose Small Signal | 2dB | 0.35W | JUNCTION | P-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF1518NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 40V | 520MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/nxpusainc-mrf1518nt1-datasheets-9627.pdf | PLD-1.5 | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | QUAD | NO LEAD | 260 | MRF1518 | 150°C | 40 | 1 | FET General Purpose Power | 13dB | Not Qualified | R-PQSO-N4 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 62.5W | 40V | METAL-OXIDE SEMICONDUCTOR | 8W | 4A | 150mA | 4A | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||||||||
| AFT05MS003NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | 520MHz | ROHS3 Compliant | 2014 | /files/nxpusainc-aft05ms003nt1-datasheets-9656.pdf | TO-243AA | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20.8dB | 3W | 100mA | LDMOS | 7.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFM03U3CT(TE12L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 16V | 520MHz | RoHS Compliant | 2009 | 3A | 2-SMD, No Lead Exposed Pad | 7W | 14.8dB | RF-CST3 | 2.5A | 3V | 16V | 3W | 3A | 500mA | N-Channel | 3.6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT09MS015NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 40V | 870MHz | ROHS3 Compliant | 2009 | PLD-1.5W | 10 Weeks | EAR99 | 8541.29.00.40 | e3 | Matte Tin (Sn) | 260 | 40 | 17.2dB | 16W | 100mA | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3SK292(TE85R,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | 500MHz | DUAL GATE, DEPLETION MODE | RoHS Compliant | 2014 | 30mA | SC-61AA | 4 | 52 Weeks | 4 | YES | 150mW | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 26dB | 1.4dB | 30mA | 8V | AMPLIFIER | 12.5V | METAL-OXIDE SEMICONDUCTOR | 10mA | 0.03A | N-Channel Dual Gate | 6V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AFT05MS004NT1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 30V | 520MHz | ROHS3 Compliant | 2010 | TO-243AA | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | 260 | 40 | 20.9dB | 4.9W | 100mA | LDMOS | 7.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC9G15XS-400AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 1.452GHz~1.511GHz | https://pdf.utmel.com/r/datasheets/ampleonusainc-blc9g15xs400avtz-datasheets-9707.pdf | SOT-1258-7 | 13 Weeks | 16.5dB | 400W | LDMOS | 32V |
