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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Lifecycle Status | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BLC10G27LS-320AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 2.5GHz~2.7GHz | /files/ampleonusainc-blc10g27ls320avtz-datasheets-9364.pdf | SOT1258-1 | 13 Weeks | 16dB | 320W | 2.8μA | 400mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3SK294(TE85L,F) | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | 500MHz | RoHS Compliant | 2003 | 30mA | SC-82A, SOT-343 | 52 Weeks | 4 | 100mW | Single | 1 | 26dB | 1.4dB | 30mA | 8V | 12.5V | 10mA | N-Channel | 6V | |||||||||||||||||||||||||||||||||||||||||||||
| BLF8G09LS-400PWU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 718.5MHz~725.5MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf8g09ls400pgwj-datasheets-0031.pdf | SOT-1242B | 8 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF8G09 | NOT SPECIFIED | 2 | 20.6dB | R-CDFP-F8 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 95W | 3.4A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||
| BLC9G20LS-361AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1.81GHz~1.88GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blc9g20ls361avty-datasheets-8971.pdf | SOT-1258-3 | 13 Weeks | 15.7dB | SOT-1258-3 | 360W | 300mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LET20030C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 200°C | -65°C | 2GHz | ENHANCEMENT MODE | ROHS3 Compliant | 9A | M243 | Lead Free | 2 | 3 | EAR99 | No | 108W | DUAL | FLAT | LET20030 | 2 | 1 | FET General Purpose Power | R-PDFM-F2 | 13.9 dB | 9A | 80V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 75V | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 400mA | 4A | LDMOS | 28V | |||||||||||||||||||||||||||||||
| PD20010-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 2GHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd20010tre-datasheets-7729.pdf | 5A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 25 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ESD PROTECTION, HIGH RELIABILITY | 59W | DUAL | GULL WING | NOT SPECIFIED | PD20010 | 10 | Single | NOT SPECIFIED | 59W | 1 | FET General Purpose Power | 11dB | Not Qualified | R-PDSO-G2 | 5A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 15W | 10W | 150mA | 5A | 40V | LDMOS | 13.6V | ||||||||||||||||||||||||
| CGHV96050F1 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 100V | 7.9GHz~9.6GHz | RoHS Compliant | 13A | 440210 | 8 Weeks | 50Ohm | 17dB | 32W | 500mA | HEMT | 40V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF0910H9LS600U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 108V | 900MHz~930MHz | ROHS3 Compliant | /files/ampleonusainc-blf0910h9ls600u-datasheets-9376.pdf | SOT-502B | 13 Weeks | 18.6dB | 600W | 2.8μA | 90mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC10G18XS-360AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 1.805GHz~1.88GHz | /files/ampleonusainc-blc10g18xs360avtz-datasheets-9379.pdf | SOT-1258-7 | 13 Weeks | 18dB | LDMOS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF0910H9LS750PU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 108V | 902MHz~928MHz | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf0910h9ls750pu-datasheets-9381.pdf | SOT539B | 13 Weeks | 21.5dB | 750W | 2.8μA | 50mA | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G22LS-270U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf8g22ls270j-datasheets-0080.pdf | SOT-502B | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF8G22 | NOT SPECIFIED | 1 | 17.7dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 80W | 2.4A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||
| BLS9G2729LS-350U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.7GHz~2.9GHz | https://pdf.utmel.com/r/datasheets/ampleonusainc-bls9g2729ls350u-datasheets-9387.pdf | SOT-502B | 13 Weeks | 14dB | 350W | 4μA | 400mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF13750HR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 105V | 700MHz~1.3GHz | ROHS3 Compliant | 2016 | /files/nxpusainc-mrf13750h1300-datasheets-6798.pdf | SOT-979A | 10 Weeks | EAR99 | 260 | 40 | 20.6dB | 650W | 10μA | LDMOS (Dual) | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF13H9LS750PU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | ROHS3 Compliant | /files/ampleonusainc-blf13h9l750pu-datasheets-7637.pdf | SOT539B | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF647PS,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.3GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf647ps112-datasheets-9274.pdf | SOT-1121B | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF647 | NOT SPECIFIED | 2 | 17.5dB | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 200W | 100mA | LDMOS (Dual), Common Source | 32V | |||||||||||||||||||||||||||||||||||||
| BF510,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 20V | 100MHz | DEPLETION MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-bf513215-datasheets-9184.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | EAR99 | LOW NOISE | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | BF510 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | 1.5dB | SILICON | SINGLE | AMPLIFIER | 0.25W | 20V | JUNCTION | 30mA | 5mA | 0.03A | 0.4 pF | N-Channel JFET | 10V | ||||||||||||||||||||||||||||
| BLC9H10XS-600AZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 105V | 616MHz~960MHz | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ampleonusainc-blc9h10xs600az-datasheets-9277.pdf | SOT1250-1 | 13 Weeks | 17.7dB | 600W | 1.4μA | 600mA | LDMOS (Dual), Common Source | 48V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLM9D1822-30BZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 65V | 1.8GHz~2.2GHz | ROHS3 Compliant | /files/ampleonusainc-blm9d182230bz-datasheets-9267.pdf | 20-QFN Exposed Pad | 13 Weeks | 29.3dB | 45.9dBm | 1.4μA | 110mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STAC2942BW | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 200°C | -65°C | 175MHz | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stac2942b-datasheets-3134.pdf | 40A | STAC244F | Lead Free | 32 Weeks | 5 | EAR99 | No | 625W | STAC294 | 625W | 2 | FET General Purpose Powers | 21 dB | 40A | 20V | Single | 130V | METAL-OXIDE SEMICONDUCTOR | 450W | 250mA | 130V | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||
| BLC8G27LS-210PVZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 2.6GHz~2.7GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blc8g27ls210pvy-datasheets-0185.pdf | SOT-1251-3 | 13 Weeks | 17dB | 8-DFM | 65W | 1.73A | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STAC2933 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 150°C | -65°C | 30MHz | ROHS3 Compliant | /files/stmicroelectronics-stac2933-datasheets-8984.pdf | 40A | STAC177B | 32 Weeks | 5 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 795W | STAC293 | 1 | FET General Purpose Power | 23.5dB | 40A | 20V | Single | 130V | METAL-OXIDE SEMICONDUCTOR | 400W | 250mA | 130V | N-Channel | 50V | |||||||||||||||||||||||||||||||||||||||
| BLC9H10XS-500AZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 105V | 617MHz~960MHz | ROHS3 Compliant | /files/ampleonusainc-blc9h10xs500az-datasheets-9301.pdf | SOT1273-1 | 13 Weeks | 18.9dB | 500W | 1.4μA | 500mA | LDMOS (Dual), Common Source | 48V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G20LS-400PGVQ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 1.81GHz~1.88GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/ampleonusainc-blf8g20ls400pvu-datasheets-0059.pdf | SOT-1242C | 8 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | GULL WING | NOT SPECIFIED | BLF8G20 | NOT SPECIFIED | 2 | 19dB | R-CDSO-G8 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 95W | 3.4A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||
| BLC10G27XS-551AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | ROHS3 Compliant | 13 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SD4933 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Tray | 1 (Unlimited) | 150°C | -65°C | 30MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sd4933-datasheets-9306.pdf | 40A | M177 | Lead Free | 4 | 32 Weeks | 177 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 648W | RADIAL | FLAT | NOT SPECIFIED | SD4933 | 4 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 24dB | Not Qualified | O-PRFM-F4 | 40A | 20V | SOURCE | 200V | METAL-OXIDE SEMICONDUCTOR | 300W | 250mA | N-Channel | 50V | ||||||||||||||||||||||||||||||
| BLC10G19XS-600AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | ROHS3 Compliant | 13 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC10G18XS-301AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1.805GHz~1.88GHz | ROHS3 Compliant | /files/ampleonusainc-blc10g18xs301avtz-datasheets-9250.pdf | SOT-1275-1 | 13 Weeks | 15.6dB | 300W | 300mA | LDMOS (Dual) | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CGHV50200F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | Tray | 1 (Unlimited) | 125V | 5GHz | RoHS Compliant | 2015 | 440217 | 8 Weeks | 11.8dB | 200W | 17A | 1A | HEMT | 40V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LET9045S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 80V | 960MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-let9045s-datasheets-8979.pdf | 9A | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) | Lead Free | 2 | 52 Weeks | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | 79W | DUAL | FLAT | 250 | LET9045 | 10 | 30 | 1 | FET General Purpose Power | 17.5dB | R-PDSO-F2 | 5A | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 59W | 300mA | 9A | LDMOS | 28V | |||||||||||||||||||||||||
| BLC10G18XS-552AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 13 Weeks |
