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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Breakdown Voltage | Power - Output | Highest Frequency Band | Current Rating (Amps) | JEDEC-95 Code | Min Breakdown Voltage | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
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| BLC10G22XS-600AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | ROHS3 Compliant | /files/ampleonusainc-blc10g22xs600avtz-datasheets-9535.pdf | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF189XRASU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 135V | 500MHz | ROHS3 Compliant | /files/ampleonusainc-blf189xrau-datasheets-8258.pdf | SOT539B | 13 Weeks | 26.2dB | 1700W | 2.8μA | 150mA | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF898U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 120V | 470MHz~800MHz | /files/ampleonusainc-blf898su-datasheets-9315.pdf | SOT539A | 13 Weeks | 18dB | 900W | 900mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC10G18XS-551AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | /files/ampleonusainc-blc10g18xs551avtz-datasheets-9542.pdf | SOT-1258-4 | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLM7G1822S-20PBGY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.17GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blm7g1822s20pby-datasheets-7792.pdf | SOT-1212-3 | 13 Weeks | EAR99 | unknown | NOT SPECIFIED | BLM7G1822 | NOT SPECIFIED | 32.3dB | 2W | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA9H0912LS-1200PU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | ROHS3 Compliant | /files/ampleonusainc-bla9h0912ls1200pu-datasheets-9450.pdf | SOT539A | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CE3520K3-C1 | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 4V | 20GHz | ROHS3 Compliant | /files/cel-ce3520k3c1-datasheets-9009.pdf | 15mA | 4-Micro-X | 7 Weeks | 13.8dB | 0.8dB | 125mW | 10mA | pHEMT FET | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS6G2731-120,112 | Ampleon USA Inc. | $319.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 60V | 2.7GHz~3.1GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ampleonusainc-bls6g2731120112-datasheets-9459.pdf | SOT-502A | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLS6G2731 | NOT SPECIFIED | 1 | 13.5dB | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 120W | 33A | 100mA | 33A | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||||||||
| PD85015-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd85015stre-datasheets-6993.pdf | 5A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 25 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | HIGH RELIABILITY | No | 59W | DUAL | GULL WING | PD85015 | 10 | Single | 59W | 1 | FET General Purpose Power | 16dB | R-PDSO-G2 | 5A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 20W | 15W | 150mA | 5A | 40V | LDMOS | 13.6V | ||||||||||||||||||||||||||||||||||||||||
| SMMBFJ310LT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/onsemiconductor-mmbfj309lt1-datasheets-1470.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 8 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | YES | NOT SPECIFIED | MMBFJ310 | 3 | Single | NOT SPECIFIED | Other Transistors | 12dB | 25V | 0.225W | JUNCTION | 60mA | 10mA | N-Channel JFET | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CE3521M4-C2 | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 4V | 20GHz | ROHS3 Compliant | 15mA | SC-82A, SOT-343 | 7 Weeks | 11.9dB | 1.05dB | 125mW | 10mA | pHEMT FET | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF861C,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 25V | DEPLETION MODE | ROHS3 Compliant | 2001 | /files/nxpusainc-bf861a215-datasheets-6459.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | EAR99 | LOW NOISE | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | BF861 | 3 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | AMPLIFIER | 0.25W | 25V | JUNCTION | 25mA | TO-236AB | 2.7 pF | N-Channel JFET | ||||||||||||||||||||||||||||||||||||||||||||||
| 2SK209-GR(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 125°C | -55°C | 1kHz | DEPLETION MODE | RoHS Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 3 | 52 Weeks | 3 | Copper, Silver, Tin | No | 150mW | DUAL | GULL WING | Single | 1 | 1dB | 6.5mA | -1.5V | AMPLIFIER | JUNCTION | 500μA | N-Channel JFET | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBFJ309LT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | DEPLETION MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-mmbfj309lt1-datasheets-1470.pdf | -25V | 30mA | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 8 Weeks | 1.437803g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | DUAL | GULL WING | 260 | MMBFJ309 | 3 | Single | 40 | 225mW | 1 | Other Transistors | 5pF | 10mA | 25V | AMPLIFIER | 25V | JUNCTION | -25V | ULTRA HIGH FREQUENCY B | N-Channel JFET | ||||||||||||||||||||||||||||||||||||
| PD55025-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55025tre-datasheets-7773.pdf | 40V | 7A | PowerSO-10 Exposed Bottom Pad | 7.5mm | 3.5mm | 9.4mm | Lead Free | 2 | 25 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH RELIABILITY | not_compliant | e3 | MATTE TIN | 79W | DUAL | GULL WING | 250 | PD55025 | 10 | Single | 30 | 1 | FET General Purpose Power | 14.5dB | Not Qualified | R-PDSO-G2 | 7A | 20V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 25W | 40V | 200mA | 7A | LDMOS | 12.5V | ||||||||||||||||||||||||||||||||
| MMBFJ310LT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | DEPLETION MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-mmbfj309lt1-datasheets-1470.pdf | 25V | 60mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 40 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | GULL WING | 260 | MMBFJ310 | 3 | Single | 40 | 225mW | 1 | Other Transistors | 12dB | 5pF | 25V | AMPLIFIER | 25V | JUNCTION | -25V | ULTRA HIGH FREQUENCY B | 10mA | 25V | N-Channel JFET | 10V | ||||||||||||||||||||||||||||||||||
| 3SK291(TE85L,F) | Toshiba Semiconductor and Storage | $8.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 800MHz | RoHS Compliant | 2009 | 30mA | SC-61AA | 52 Weeks | 4 | YES | 150mW | 125°C | FET General Purpose Powers | 22.5dB | 2.5dB | 30mA | Single | 12.5V | METAL-OXIDE SEMICONDUCTOR | 10mA | 0.03A | N-Channel Dual Gate | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF5017HSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | 150V | 30MHz~2.2GHz | ROHS3 Compliant | /files/nxpusainc-mmrf5017hs1ghz-datasheets-6219.pdf | NI-400S-2S | 16 Weeks | 260 | 40 | 18.4dB | 125W | 200mA | HEMT | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA9H0912L-1200PU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | ROHS3 Compliant | /files/ampleonusainc-bla9h0912ls1200pu-datasheets-9450.pdf | SOT539A | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CE3514M4-C2 | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 4V | 12GHz | DEPLETION MODE | ROHS3 Compliant | 4-SMD, Flat Leads | 4 | 7 Weeks | yes | YES | DUAL | 125°C | -55°C | 1 | 12.2dB | R-PDSO-F4 | 0.62dB | SILICON | SINGLE | AMPLIFIER | N-CHANNEL | 3V | JUNCTION | 125mW | 68mA | 15mA | 0.015A | pHEMT FET | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS9G2729L-350U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.7GHz~2.9GHz | https://pdf.utmel.com/r/datasheets/ampleonusainc-bls9g2729ls350u-datasheets-9387.pdf | SOT-502A | 13 Weeks | 14dB | 350W | 4μA | 400mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF989SU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 108V | 400MHz~860MHz | ROHS3 Compliant | /files/ampleonusainc-blf989u-datasheets-9319.pdf | SOT539B | 13 Weeks | 20dB | 900W | 2.8μA | 1.3A | LDMOS (Dual), Common Source | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS9G3135L-400U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.1GHz~3.5GHz | https://pdf.utmel.com/r/datasheets/ampleonusainc-bls9g3135ls400u-datasheets-8038.pdf | SOT-502A | 13 Weeks | 12dB | 400W | 4μA | 400mA | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STAC2943 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 150°C | -65°C | 30MHz | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stac2943-datasheets-8987.pdf | 40A | STAC177B | 32 Weeks | 5 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 795W | STAC294 | 1 | FET General Purpose Power | 25dB | 40A | 20V | Single | 130V | METAL-OXIDE SEMICONDUCTOR | 350W | 250mA | N-Channel | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CLF1G0035-100,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 150V | 3GHz | DEPLETION MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-clf1g0035s100112-datasheets-9115.pdf | SOT467C | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | CLF1G0035 | NOT SPECIFIED | 1 | 12dB | R-CDFM-F2 | GALLIUM NITRIDE | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 150V | HIGH ELECTRON MOBILITY | 100W | 330mA | HEMT | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BLC10G27LS-320AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 2.5GHz~2.7GHz | /files/ampleonusainc-blc10g27ls320avtz-datasheets-9364.pdf | SOT1258-1 | 13 Weeks | 16dB | 320W | 2.8μA | 400mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3SK294(TE85L,F) | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | 500MHz | RoHS Compliant | 2003 | 30mA | SC-82A, SOT-343 | 52 Weeks | 4 | 100mW | Single | 1 | 26dB | 1.4dB | 30mA | 8V | 12.5V | 10mA | N-Channel | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G09LS-400PWU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 718.5MHz~725.5MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ampleonusainc-blf8g09ls400pgwj-datasheets-0031.pdf | SOT-1242B | 8 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLF8G09 | NOT SPECIFIED | 2 | 20.6dB | R-CDFP-F8 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 95W | 3.4A | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC9G20LS-361AVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1.81GHz~1.88GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blc9g20ls361avty-datasheets-8971.pdf | SOT-1258-3 | 13 Weeks | 15.7dB | SOT-1258-3 | 360W | 300mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LET20030C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 200°C | -65°C | 2GHz | ENHANCEMENT MODE | ROHS3 Compliant | 9A | M243 | Lead Free | 2 | 3 | EAR99 | No | 108W | DUAL | FLAT | LET20030 | 2 | 1 | FET General Purpose Power | R-PDFM-F2 | 13.9 dB | 9A | 80V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 75V | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 400mA | 4A | LDMOS | 28V |
