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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| NGTB20N120IHRWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/onsemiconductor-ngtb20n120ihrwg-datasheets-2396.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NO | 384W | 3 | Single | 384W | Insulated Gate BIP Transistors | N-CHANNEL | 1.2kV | 2.1V | 1.2kV | 40A | 1200V | 600V, 20A, 10 Ω, 15V | 20V | 6.5V | 2.45V @ 15V, 20A | Trench Field Stop | 225nC | 120A | -/235ns | 450μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IXGA30N120B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixga30n120b3-datasheets-2400.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | No SVHC | 3 | yes | EAR99 | LOW CONDUCTION LOSS | unknown | e3 | PURE TIN | 300W | GULL WING | NOT SPECIFIED | IXG*30N120 | 4 | Single | NOT SPECIFIED | 300W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 2.96V | 56 ns | 1.2kV | 60A | 1200V | 471 ns | 960V, 30A, 5 Ω, 15V | 20V | 5V | 3.5V @ 15V, 30A | PT | 87nC | 150A | 16ns/127ns | 3.47mJ (on), 2.16mJ (off) | ||||||||||||||||||||||||||||||||||
| STGP30H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw30h60df-datasheets-9802.pdf | TO-220-3 | Lead Free | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 260W | STGP30 | Single | 260W | Insulated Gate BIP Transistors | N-CHANNEL | 110 ns | 600V | 2.4V | 600V | 60A | 400V, 30A, 10 Ω, 15V | 20V | 2.4V @ 15V, 30A | Trench Field Stop | 105nC | 120A | 50ns/160ns | 350μJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB40N120FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/onsemiconductor-ngtb40n120fl2wg-datasheets-2406.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 13 Weeks | 6.500007g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | 535W | 3 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 535W | 240 ns | 1.2kV | 2V | 1.2kV | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 40A | Trench Field Stop | 313nC | 200A | 116ns/286ns | 3.4mJ (on), 1.1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| HGTG5N120BND | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-hgtp5n120bnd-datasheets-1150.pdf | 1.2kV | 21A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 6.39g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | Tin | No | 8541.29.00.95 | e3 | 167W | Single | 167W | 1 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 21A | 600V | 65 ns | 1.2kV | 2.45V | 35 ns | 1.2kV | 21A | 1200V | 357 ns | 960V, 5A, 25 Ω, 15V | 2.7V @ 15V, 5A | NPT | 53nC | 40A | 22ns/160ns | 450μJ (on), 390μJ (off) | |||||||||||||||||||||||||||||||||||
| IKA15N60TXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ika15n60txksa1-datasheets-2420.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | EAR99 | HIGH SWITCHING SPEED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 35.7W | TO-220AB | 34ns | 32 ns | 600V | 14.7A | 291 ns | 400V, 15A, 15 Ω, 15V | 2.05V @ 15V, 15A | Trench Field Stop | 87nC | 45A | 17ns/188ns | 570μJ | ||||||||||||||||||||||||||||||||||||||||||||||
| NGTB40N120IHRWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/onsemiconductor-ngtb40n120ihrwg-datasheets-2337.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 8 Weeks | 6.500007g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NO | 384W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 384W | 1.2kV | 2.3V | 1.2kV | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.55V @ 15V, 40A | Trench Field Stop | 225nC | 120A | -/230ns | 950μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IGW40T120FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw40t120fksa1-datasheets-2425.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 270W | TO-247AD | 92 ns | 1200V | 75A | 700 ns | 600V, 40A, 15 Ω, 15V | 2.3V @ 15V, 40A | NPT, Trench Field Stop | 203nC | 105A | 48ns/480ns | 6.5mJ | |||||||||||||||||||||||||||||||||||||||||||||
| NGTB40N120FL2WAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-ngtb40n120fl2wag-datasheets-2341.pdf | TO-247-4 | Lead Free | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | 536W | 240ns | 1200V | 160A | 600V, 40A, 10 Ω, 15V | 2.4V @ 15V, 40A | Field Stop | 313nC | 30ns/145ns | 1.7mJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK30B135W1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 340W | TO-247 | 340W | 1.35kV | 2.2V | 60A | 1350V | 60A | 600V, 30A, 10Ohm, 15V | 2.2V @ 15V, 30A | 62nC | 200A | -/129ns | 1.47mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB40N120FLWG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-ngtb40n120flwg-datasheets-2258.pdf | TO-247-3 | TO-247 | 260W | 200ns | 1.2V | 80A | 600V, 40A, 10Ohm, 15V | 2.2V @ 15V, 40A | Trench Field Stop | 415nC | 160A | 130ns/385ns | 2.6mJ (on), 1.6mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GN120L2DQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gn120l2dq2g-datasheets-2264.pdf | 1.2kV | 134A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 29 Weeks | 10.6g | 3 | yes | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 543W | 3 | Single | 1 | Insulated Gate BIP Transistors | 28 ns | 320 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 134A | 1.2kV | 1.7V | 55 ns | 1.2kV | 134A | 1200V | 600 ns | 800V, 50A, 2.2 Ω, 15V | 6.5V | 2.1V @ 15V, 50A | NPT, Trench Field Stop | 315nC | 150A | 28ns/320ns | 4495μJ (off) | ||||||||||||||||||||||||||||||||||
| RGT30NS65DGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5mm | 2 | 17 Weeks | 1.946308g | Unknown | 3 | EAR99 | not_compliant | 133W | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 133W | 1 | 175°C | R-PSSO-G2 | 18 ns | 64 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 30A | 650V | 55 ns | 650V | 1.65V | 40 ns | 650V | 30A | 204 ns | 400V, 15A, 10 Ω, 15V | 2.1V @ 15V, 15A | Trench Field Stop | 32nC | 45A | 18ns/64ns | ||||||||||||||||||||||||||||||||||||||||
| IRG7PH42U-EP | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-irg7ph42uep-datasheets-2290.pdf | TO-247-3 | TO-247AD | 385W | 153ns | 1.2V | 90A | 600V, 30A, 10Ohm, 15V | 2V @ 15V, 30A | Trench | 157nC | 90A | 25ns/229ns | 2.11mJ (on), 1.18mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25GP120BDQ1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt25gp120bdq1g-datasheets-2291.pdf | 1.2kV | 69A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 32 Weeks | 38.000013g | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 417W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 69A | 1.2kV | 3.3V | 26 ns | 1.2kV | 69A | 1200V | 200 ns | 600V, 25A, 5 Ω, 15V | 30V | 6V | 3.9V @ 15V, 25A | PT | 110nC | 90A | 12ns/70ns | 500μJ (on), 440μJ (off) | ||||||||||||||||||||||||||||||||||
| STGF10NB60SD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp10nb60sd-datasheets-1122.pdf | 600V | 10A | TO-220-3 Full Pack | 10.4mm | 20mm | 4.6mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 25W | STGF10 | 3 | Single | 25W | 1 | Insulated Gate BIP Transistors | 460ns | 20A | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 600V | TO-220AB | 37ns | 600V | 1.8V | 1160 ns | 600V | 23A | 3100 ns | 480V, 10A, 1k Ω, 15V | 20V | 5V | 1.75V @ 15V, 10A | 33nC | 80A | 700ns/1.2μs | 600μJ (on), 5mJ (off) | |||||||||||||||||||||||||||||||
| FGPF30N45TTU | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-fgpf30n45ttu-datasheets-2299.pdf | TO-220-3 Full Pack | 3 | LOW CONDUCTION LOSS | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | MOTOR CONTROL | N-CHANNEL | 50.4W | TO-220AB | 80 ns | 450V | 387 ns | 1.6V @ 15V, 20A | Trench | 73nC | 120A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IHW40N65R5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ihw40n65r5xksa1-datasheets-2304.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 230W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 230W | 90 ns | 650V | 59 ns | 650V | 80A | 321 ns | 400V, 20A, 10 Ω, 15V | 1.7V @ 15V, 40A | 193nC | 120A | 30ns/258ns | 630μJ (on), 140μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| IKW25T120FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ikw25t120fksa1-datasheets-2309.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | 190W | 3 | Single | 190W | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 200 ns | 1.2kV | 82 ns | 1.2kV | 50A | 1200V | 790 ns | 600V, 25A, 22 Ω, 15V | 2.2V @ 15V, 25A | NPT, Trench Field Stop | 155nC | 75A | 50ns/560ns | 4.2mJ | |||||||||||||||||||||||||||||||||||||||||||
| STGP19NC60KD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb19nc60kdt4-datasheets-1498.pdf | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 8 Weeks | 6.000006g | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | 125W | STGP19 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 30 ns | 105 ns | SILICON | POWER CONTROL | N-CHANNEL | 125W | TO-220AB | 31 ns | 600V | 38 ns | 600V | 35A | 270 ns | 480V, 12A, 10 Ω, 15V | 20V | 6.5V | 2.75V @ 15V, 12A | 55nC | 75A | 30ns/105ns | 165μJ (on), 255μJ (off) | ||||||||||||||||||||||||||||||||||||||
| FGA15N120ANTDTU-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fga15n120antdtuf109-datasheets-2316.pdf | TO-3P-3, SC-65-3 | 6 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | NO | Insulated Gate BIP Transistors | N-CHANNEL | 186W | 186W | 330ns | 1200V | 30A | 600V, 15A, 10 Ω, 15V | 20V | 8.5V | 2.4V @ 15V, 15A | NPT and Trench | 120nC | 45A | 15ns/160ns | 3mJ (on), 600μJ (off) | 180ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT100GN120B2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt100gn120b2g-datasheets-2325.pdf | TO-247-3 Variant | Lead Free | 3 | 24 Weeks | 3 | yes | HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | 960W | 3 | Single | 1 | Insulated Gate BIP Transistors | 50 ns | 615 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 960W | 1.2kV | 100 ns | 1.2kV | 245A | 1200V | 935 ns | 800V, 100A, 1 Ω, 15V | 6.5V | 2.1V @ 15V, 100A | Trench Field Stop | 540nC | 300A | 50ns/615ns | 11mJ (on), 9.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IXGA20N120A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh20n120a3-datasheets-0408.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 1.59999g | No SVHC | 3 | yes | EAR99 | LOW CONDUCTION LOSS | unknown | e3 | PURE TIN | 180W | GULL WING | NOT SPECIFIED | IXG*20N120 | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 180W | 1.2kV | 2.5V | 66 ns | 2.5V | 40A | 1200V | 1530 ns | 960V, 20A, 10 Ω, 15V | 20V | 5V | 2.5V @ 15V, 20A | PT | 50nC | 120A | 16ns/290ns | 2.85mJ (on), 6.47mJ (off) | ||||||||||||||||||||||||||||||||
| FGP10N60UNDF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgp10n60undf-datasheets-2328.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 4 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 139W | Single | 139W | 1 | Insulated Gate BIP Transistors | 8.1 ns | 55 ns | SILICON | MOTOR CONTROL | N-CHANNEL | TO-220AB | 37.7 ns | 600V | 2.3V | 15.4 ns | 600V | 20A | 89.3 ns | 400V, 10A, 10 Ω, 15V | 20V | 8.5V | 2.45V @ 15V, 10A | NPT | 37nC | 30A | 8ns/52.2ns | 150μJ (on), 50μJ (off) | 24.8ns | ||||||||||||||||||||||||||||||||||
| IXBF20N360 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixbf20n360-datasheets-2247.pdf | i4-Pac™-5 | 28 Weeks | unknown | 230W | 230W | 1.7 μs | 3.6kV | 3.4V | 45A | 3600V | 1500V, 20A, 10 Ω, 15V | 3.4V @ 15V, 20A | 43nC | 220A | 18ns/238ns | 15.5mJ (on), 4.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGP3040G2-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, EcoSPARK® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Logic | ROHS3 Compliant | 2006 | /files/onsemiconductor-fgi3040g2f085-datasheets-1280.pdf | TO-220-3 | 5 Weeks | yes | e3 | Tin (Sn) | NO | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 150W | 150W | 7000ns | 400V | 41A | 12V | 2.2V | 1.25V @ 4V, 6A | 21nC | 900ns/4.8μs | 15000ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTG50N60FLWG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-ngtg50n60flwg-datasheets-2257.pdf | TO-247-3 | TO-247 | 223W | 600V | 100A | 400V, 50A, 10Ohm, 15V | 1.9V @ 15V, 50A | Trench | 310nC | 200A | 116ns/292ns | 1.1mJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGP4066PBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-irgp4790pbf-datasheets-0092.pdf | TO-247-3 | TO-247AC | 454W | 600V | 140A | 400V, 75A, 10Ohm, 15V | 2.1V @ 15V, 75A | Trench | 150nC | 225A | 50ns/200ns | 2.47mJ (on), 2.16mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB75N60FL2WG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-ngtb75n60fl2wg-datasheets-2194.pdf | TO-247-3 | TO-247 | 595W | 80ns | 600V | 100A | 400V, 75A, 10Ohm, 15V | 2V @ 15V, 75A | Trench Field Stop | 310nC | 200A | 110ns/270ns | 1.5mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGP20V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb20v60df-datasheets-1181.pdf | TO-220-3 | 20 Weeks | EAR99 | No | 167W | STGP20 | Single | 167W | Insulated Gate BIP Transistors | N-CHANNEL | 40ns | 600V | 2.3V | 600V | 40A | 400V, 20A, 15V | 20V | 2.2V @ 15V, 20A | Trench Field Stop | 116nC | 80A | 38ns/149ns | 200μJ (on), 130μJ (off) |
