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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| HGTP7N60A4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/onsemiconductor-hgtp7n60a4f102-datasheets-1287.pdf | 600V | 34A | TO-220-3 | 10.28mm | 9.02mm | 4.57mm | Lead Free | 3 | 44 Weeks | 1.8g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 125W | HGTP7N60 | Single | 125W | 1 | 11 ns | 11ns | 100 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 1.9V | 17 ns | 600V | 34A | 205 ns | 390V, 7A, 25 Ω, 15V | 2.7V @ 15V, 7A | 37nC | 56A | 11ns/100ns | 55μJ (on), 60μJ (off) | ||||||||||||||||||||||||||||
| FGA15S125P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fga15s125p-datasheets-1704.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 136W | NOT SPECIFIED | Single | NOT SPECIFIED | 136W | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 1.25kV | 2.72V | 331 ns | 1.25kV | 30A | 1250V | 670 ns | 25V | 7.5V | 2.72V @ 15V, 15A | Trench | 129nC | 45A | |||||||||||||||||||||||||||||||||||
| STGF10M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf10m65df2-datasheets-1712.pdf | TO-220-3 Full Pack | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STGF10 | NOT SPECIFIED | 30W | 96ns | 650V | 20A | 400V, 10A, 22 Ω, 15V | 2V @ 15V, 10A | Trench Field Stop | 28nC | 40A | 19ns/91ns | 120μJ (on), 270μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGT8NS65DGC9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt8ns65dgc9-datasheets-1715.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 65W | 40ns | 54 ns | 650V | 8A | 158 ns | 400V, 4A, 50 Ω, 15V | 2.1V @ 15V, 4A | Trench Field Stop | 13.5nC | 12A | 17ns/69ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RGT16NS65DGC9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt16ns65dgc9-datasheets-1717.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 94W | 42ns | 27 ns | 650V | 16A | 170 ns | 400V, 8A, 10 Ω, 15V | 2.1V @ 15V, 8A | Trench Field Stop | 21nC | 24A | 13ns/33ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STGP15M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp15m65df2-datasheets-1719.pdf | TO-220-3 | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | 136W | NOT SPECIFIED | STGP15 | NOT SPECIFIED | 136W | 142 ns | 650V | 2V | 30A | 400V, 15A, 12 Ω, 15V | 2V @ 15V, 15A | Trench Field Stop | 45nC | 60A | 24ns/93ns | 90μJ (on), 450μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGT16TM65DGC9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt16tm65dgc9-datasheets-1727.pdf | TO-220-3 Full Pack | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 22W | TO-220AB | 42ns | 27 ns | 650V | 9A | 170 ns | 400V, 8A, 10 Ω, 15V | 2.1V @ 15V, 8A | Trench Field Stop | 21nC | 24A | 13ns/33ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| STGP19NC60SD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp19nc60sd-datasheets-1729.pdf | TO-220-3 | Lead Free | 3 | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 130W | STGP19 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 17.5 ns | 175 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 130W | TO-220AB | 31 ns | 600V | 23.5 ns | 600V | 40A | 535 ns | 480V, 12A, 10 Ω, 15V | 20V | 5.75V | 1.9V @ 15V, 12A | 54.5nC | 80A | 17.5ns/175ns | 135μJ (on), 815μJ (off) | |||||||||||||||||||||||||||||||||||||
| RGT50TM65DGC9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt50tm65dgc9-datasheets-1733.pdf | TO-220-3 Full Pack | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 47W | TO-220AB | 58ns | 65 ns | 650V | 21A | 210 ns | 400V, 25A, 10 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 49nC | 75A | 27ns/88ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| IKA10N65ET6XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ika10n65et6xksa2-datasheets-1735.pdf | TO-220-3 Full Pack | 16 Weeks | 40W | 51ns | 650V | 15A | 400V, 8.5A, 47 Ω, 15V | 1.9V @ 15V, 8.5A | Trench Field Stop | 27nC | 42.5A | 30ns/106ns | 200μJ (on), 70μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB35N65FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-ngtb35n65fl2wg-datasheets-1737.pdf | TO-247-3 | 16.26mm | 21.08mm | 5.3mm | Lead Free | 21 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | Tin | 300W | Single | 300W | 68 ns | 650V | 2.2V | 650V | 70A | 400V, 35A, 10 Ω, 15V | 2V @ 15V, 35A | Trench Field Stop | 125nC | 120A | 72ns/132ns | 840μJ (on), 280μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| RGT30NL65DGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt30nl65dgtl-datasheets-1652.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 133W | 55ns | 40 ns | 650V | 30A | 204 ns | 400V, 15A, 10 Ω, 15V | 2.1V @ 15V, 15A | Trench Field Stop | 32nC | 45A | 18ns/64ns | ||||||||||||||||||||||||||||||||||||||||||||||||
| STGF19NC60KD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb19nc60kdt4-datasheets-1498.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | 3 | EAR99 | No | 32W | STGF19 | 3 | Single | 32W | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | TO-220AB | 31 ns | 600V | 2V | 38 ns | 600V | 16A | 270 ns | 480V, 12A, 10 Ω, 15V | 20V | 6.5V | 2.75V @ 15V, 12A | 55nC | 75A | 30ns/105ns | 165μJ (on), 255μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| STGP15H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf15h60df-datasheets-1887.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 20 Weeks | 6.000006g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 115W | STGP15 | Single | 115W | 103 ns | 600V | 1.6V | 600V | 30A | 400V, 15A, 10 Ω, 15V | 2V @ 15V, 15A | Trench Field Stop | 81nC | 60A | 24.5ns/118ns | 136μJ (on), 207μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| STGP10NB60S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb10nb60st4-datasheets-9069.pdf | 600V | 10A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 8 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 80W | STGP10 | 3 | Single | 80W | 1 | Insulated Gate BIP Transistors | 7 μs | 10A | SILICON | POWER CONTROL | N-CHANNEL | 600V | 10A | TO-220AB | 600V | 1.7V | 1160 ns | 600V | 29A | 3100 ns | 480V, 10A, 1k Ω, 15V | 20V | 5V | 1.75V @ 15V, 10A | 33nC | 80A | 700ns/1.2μs | 600μJ (on), 5mJ (off) | |||||||||||||||||||||||||||
| FGP5N60LS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgp5n60ls-datasheets-1618.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 3 | 4 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 83W | Single | 1 | Insulated Gate BIP Transistors | SILICON | GENERAL PURPOSE SWITCHING | N-CHANNEL | 83W | TO-220AB | 600V | 1.8V | 5.9 ns | 600V | 10A | 187 ns | 400V, 5A, 10 Ω, 15V | 20V | 4.5V | 3.2V @ 12V, 14A | Field Stop | 18.3nC | 36A | 4.3ns/36ns | 38μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||
| APT50GF120LRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt50gf120b2rg-datasheets-0960.pdf | 1.2kV | 156A | TO-264-3, TO-264AA | Lead Free | 3 | 24 Weeks | yes | No | e1 | TIN SILVER COPPER | 781W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 781W | 1.2kV | 106 ns | 1.2kV | 135A | 1200V | 520 ns | 800V, 50A, 1 Ω, 15V | 30V | 6.5V | 3V @ 15V, 50A | NPT | 340nC | 150A | 25ns/260ns | 3.6mJ (on), 2.64mJ (off) | |||||||||||||||||||||||||||||||||||||
| IKA08N65ET6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ika08n65et6xksa1-datasheets-1634.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 33W | TO-220AB | 43ns | 30 ns | 650V | 11A | 147 ns | 400V, 5A, 47 Ω, 15V | 1.9V @ 15V, 5A | Trench Field Stop | 17nC | 25A | 20ns/59ns | 110μJ (on), 40μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| RGT8TM65DGC9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt8tm65dgc9-datasheets-1642.pdf | TO-220-3 Full Pack | 3 | 17 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 16W | TO-220AB | 40ns | 54 ns | 650V | 5A | 158 ns | 400V, 4A, 50 Ω, 15V | 2.1V @ 15V, 4A | Trench Field Stop | 13.5nC | 12A | 17ns/69ns | |||||||||||||||||||||||||||||||||||||||||||||||||
| RGT40NL65DGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt40nl65dgtl-datasheets-1644.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 161W | 58ns | 51 ns | 650V | 40A | 204 ns | 400V, 20A, 10 Ω, 15V | 2.1V @ 15V, 20A | Trench Field Stop | 40nC | 60A | 22ns/75ns | ||||||||||||||||||||||||||||||||||||||||||||||||
| RGT50NL65DGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rohmsemiconductor-rgt50nl65dgtl-datasheets-1584.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 194W | 58ns | 65 ns | 650V | 48A | 210 ns | 400V, 25A, 10 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 49nC | 75A | 27ns/88ns | ||||||||||||||||||||||||||||||||||||||||||||||||
| SGS10N60RUFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-sgs10n60rufdtu-datasheets-3230.pdf | 600V | 10A | TO-220-3 Full Pack | Lead Free | 3 | 11 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 13 hours ago) | yes | EAR99 | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | No | 8541.29.00.95 | e3 | Tin (Sn) | 55W | SG*10N60 | Single | 55W | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | MOTOR CONTROL | N-CHANNEL | 60ns | 600V | 2.2V | 49 ns | 600V | 16A | 284 ns | 300V, 10A, 20 Ω, 15V | 20V | 8V | 2.8V @ 15V, 10A | 30nC | 30A | 15ns/36ns | 141μJ (on), 215μJ (off) | 220ns | |||||||||||||||||||||||||||||||
| APT45GP120B2DQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/microsemicorporation-apt45gp120b2dq2g-datasheets-3191.pdf | 1.2kV | 113A | TO-247-3 Variant | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 33 Weeks | 3 | yes | No | e1 | TIN SILVER COPPER | 625W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 113A | 1.2kV | 3.3V | 47 ns | 1.2kV | 113A | 1200V | 230 ns | 600V, 45A, 5 Ω, 15V | 6V | 3.9V @ 15V, 45A | PT | 185nC | 170A | 18ns/100ns | 900μJ (on), 905μJ (off) | ||||||||||||||||||||||||||||||||||
| APT95GR65B2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt95gr65b2-datasheets-3088.pdf | TO-247-3 | 35 Weeks | 892W | T-MAX™ [B2] | 892W | 650V | 2.4V | 208A | 650V | 208A | 433V, 95A, 4.3Ohm, 15V | 2.4V @ 15V, 95A | NPT | 420nC | 400A | 29ns/226ns | 3.12mJ (on), 2.55mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGW40N65H5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw40n65h5fksa1-datasheets-2932.pdf | TO-247-3 | Lead Free | 16 Weeks | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | 255W | NOT SPECIFIED | Single | NOT SPECIFIED | 255W | Insulated Gate BIP Transistors | N-CHANNEL | 650V | 1.6V | 1.65V | 74A | 400V, 20A, 15 Ω, 15V | 20V | 4.8V | 2.1V @ 15V, 40A | 95nC | 120A | 22ns/165ns | 390μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| NGTB40N65IHL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb40n65ihl2wg-datasheets-2938.pdf | TO-247-3 | Lead Free | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | 300W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 300W | 465 ns | 650V | 2.2V | 80A | 400V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.2V @ 15V, 40A | Trench Field Stop | 135nC | 160A | -/140ns | 360μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IKA08N65F5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ika08n65f5xksa1-datasheets-2952.pdf | TO-220-3 | Lead Free | 14 Weeks | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 31.2W | NOT SPECIFIED | Single | NOT SPECIFIED | 31.2W | Insulated Gate BIP Transistors | N-CHANNEL | 41 ns | 650V | 1.6V | 1.6V | 10.8A | 400V, 4A, 48 Ω, 15V | 20V | 4.8V | 2.1V @ 15V, 8A | 22nC | 24A | 10ns/116ns | 70μJ (on), 20μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IXYH75N65C3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixyh75n65c3h1-datasheets-2843.pdf | TO-247-3 | Lead Free | 12 Weeks | 38.000013g | 750W | Single | 750W | 150 ns | 650V | 1.8V | 2.3V | 170A | 400V, 60A, 3 Ω, 15V | 2.3V @ 15V, 60A | PT | 123nC | 360A | 27ns/93ns | 2.8mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKA08N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ika08n65h5xksa1-datasheets-2859.pdf | TO-220-3 | 10.65mm | 16.15mm | 4.85mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 31.2W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 31.2W | 40 ns | 650V | 1.65V | 1.65V | 10.8A | 400V, 4A, 48 Ω, 15V | 20V | 4.8V | 2.1V @ 15V, 8A | 22nC | 24A | 11ns/115ns | 70μJ (on), 30μJ (off) | ||||||||||||||||||||||||||||||||||||||
| SGL40N150DTU | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-sgl40n150dtu-datasheets-2777.pdf | TO-264-3, TO-264AA | 3 | yes | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 200W | 300ns | 320 ns | 1.5V | 40A | 475 ns | 4.7V @ 15V, 40A | 140nC | 120A |
