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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| APT36GA60B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | TO-247-3 | 3 | 29 Weeks | yes | LOW CONDUCTION LOSS | No | e3 | PURE MATTE TIN | 290W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | TO-247AD | 600V | 29 ns | 600V | 65A | 262 ns | 400V, 20A, 10 Ω, 15V | 30V | 6V | 2.5V @ 15V, 20A | PT | 102nC | 109A | 16ns/122ns | 307μJ (on), 254μJ (off) | |||||||||||||||||||||||||||||||||||||||
| APT43GA90B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt43ga90b-datasheets-2646.pdf | TO-247-3 | 3 | 6 Weeks | yes | LOW CONDUCTION LOSSES | No | e1 | TIN SILVER COPPER | 337W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 337W | 900V | 28 ns | 900V | 78A | 246 ns | 600V, 25A, 4.7 Ω, 15V | 3.1V @ 15V, 25A | PT | 116nC | 129A | 12ns/82ns | 875μJ (on), 425μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| APT30GS60BRDQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gs60brdq2g-datasheets-2648.pdf | TO-247-3 | 25 Weeks | no | No | 250W | Single | 250W | 25 ns | 600V | 600V | 54A | 400V, 30A, 9.1 Ω, 15V | 3.15V @ 15V, 30A | NPT | 145nC | 113A | 16ns/360ns | 570μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGF20M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf20m65df2-datasheets-2573.pdf | TO-220-3 Full Pack | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STGF20 | NOT SPECIFIED | 32.6W | 166ns | 650V | 40A | 400V, 20A, 12 Ω, 15V | 2V @ 15V, 20A | Trench Field Stop | 63nC | 80A | 26ns/108ns | 140μJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF10B65M2 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | TO-220-3 | 18 Weeks | 30W | TO-220 | 30W | 262 ns | 650V | 2V | 20A | 650V | 20A | 400V, 10A, 30Ohm, 15V | 2V @ 15V, 10A | 24nC | 30A | 12ns/91ns | 180μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGPF10N60UNDF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgp20n60ufdtu-datasheets-2147.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 5 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 42W | Single | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | MOTOR CONTROL | N-CHANNEL | 42W | TO-220AB | 37.7 ns | 600V | 2V | 15.4 ns | 600V | 20A | 89.3 ns | 400V, 10A, 10 Ω, 15V | 20V | 8.5V | 2.45V @ 15V, 10A | NPT | 37nC | 30A | 8ns/52.2ns | 150μJ (on), 50μJ (off) | 24.8ns | |||||||||||||||||||||||||||||||
| IKA15N65F5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ika15n65f5xksa1-datasheets-2515.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 33.3W | NOT SPECIFIED | Single | NOT SPECIFIED | 33.3W | Insulated Gate BIP Transistors | N-CHANNEL | 50 ns | 650V | 1.6V | 1.6V | 14A | 400V, 7.5A, 39 Ω, 15V | 20V | 4.8V | 2.1V @ 15V, 15A | 38nC | 45A | 17ns/150ns | 130μJ (on), 40μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| AOKS30B60D1 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 208W | TO-247 | 208W | 600V | 2.5V | 60A | 600V | 60A | 400V, 30A, 10Ohm, 15V | 2.5V @ 15V, 30A | 34nC | 96A | 20ns/58ns | 1.1mJ (on), 240μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH20N120C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh20n120c3d1-datasheets-2522.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 28 Weeks | 3 | EAR99 | 230W | IXY*20N120 | Single | 230W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 195ns | 1.2kV | 4V | 60 ns | 1.2kV | 36A | 1200V | 220 ns | 600V, 20A, 10 Ω, 15V | 20V | 5V | 3.4V @ 15V, 20A | 53nC | 88A | 20ns/90ns | 1.3mJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||||||||
| STGW20H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw20h60df-datasheets-2595.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 20 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 167W | STGW20 | Single | 167W | 90ns | 600V | 2V | 600V | 40A | 400V, 20A, 10 Ω, 15V | 2V @ 15V, 20A | Trench Field Stop | 115nC | 80A | 42.5ns/177ns | 209μJ (on), 261μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXBT42N170 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixbh42n170-datasheets-2134.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 4.500005g | yes | LOW CONDUCTION LOSS | unknown | e3 | PURE TIN | 360W | GULL WING | NOT SPECIFIED | IXB*42N170 | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | 45 ns | 560 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 360W | 1.32 μs | 1.7kV | 2.3V | 224 ns | 1.7kV | 80A | 1700V | 1070 ns | 20V | 5.5V | 2.8V @ 15V, 42A | 188nC | 300A | |||||||||||||||||||||||||||||||
| APT200GN60B2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt200gn60b2g-datasheets-2526.pdf | TO-247-3 | Lead Free | 3 | 24 Weeks | 3 | EAR99 | No | 682W | 3 | Single | Insulated Gate BIP Transistors | 50 ns | 560 ns | N-CHANNEL | 682W | TO-247AC | 600V | 600V | 283A | 400V, 200A, 1 Ω, 15V | 20V | 6.5V | 1.85V @ 15V, 200A | Trench Field Stop | 1180nC | 600A | 50ns/560ns | 13mJ (on), 11mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| STGWT40HP65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HB | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt40hp65fb-datasheets-2529.pdf | TO-3P-3, SC-65-3 | 32 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STGWT40 | NOT SPECIFIED | 283W | 140ns | 650V | 80A | 400V, 40A, 5 Ω, 15V | 2V @ 15V, 40A | Trench Field Stop | 210nC | 160A | -/142ns | 363μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGP30V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp30v60f-datasheets-2531.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | 20 Weeks | 3 | EAR99 | No | 260W | STGP30 | Single | 260W | 600V | 2.3V | 600V | 60A | 400V, 30A, 10 Ω, 15V | 2.3V @ 15V, 30A | Trench Field Stop | 163nC | 120A | 45ns/189ns | 383μJ (on), 233μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGF25N250 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgf25n250-datasheets-2535.pdf | i4-Pac™-5 (3 Leads) | Lead Free | 3 | 28 Weeks | 3 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 114W | NOT SPECIFIED | IXG*25N250 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 114W | 2.5kV | 301 ns | 2.5kV | 30A | 2500V | 409 ns | 20V | 5V | 5.2V @ 15V, 75A | NPT | 75nC | 200A | ||||||||||||||||||||||||||||||||||||||
| RGTH40TS65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgth40ts65gc11-datasheets-2537.pdf | TO-247-3 | 3 | 17 Weeks | 38.000013g | Unknown | 3 | yes | EAR99 | 144W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 20A | 144W | 650V | 1.6V | 47 ns | 650V | 40A | 141 ns | 400V, 20A, 10 Ω, 15V | 2.1V @ 15V, 20A | Trench Field Stop | 40nC | 80A | 22ns/73ns | |||||||||||||||||||||||||||||||||||||||||||
| IRGSL4062DPBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-irgsl4062dpbf-datasheets-2549.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 250W | 89ns | 600V | 48A | 400V, 24A, 10Ohm, 15V | 1.95V @ 15V, 24A | Trench | 50nC | 96A | 41ns/104ns | 115μJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGTH50TS65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgth50ts65gc11-datasheets-2550.pdf | TO-247-3 | 3 | 17 Weeks | 38.000013g | Unknown | 3 | yes | EAR99 | 174W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 25A | 174W | 650V | 1.6V | 65 ns | 650V | 50A | 172 ns | 400V, 25A, 10 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 49nC | 100A | 27ns/94ns | |||||||||||||||||||||||||||||||||||||||||||
| APT100GN60LDQ4G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt100gn60ldq4g-datasheets-2562.pdf | 600V | 100A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 25 Weeks | 10.6g | yes | EAR99 | HIGH RELIABILITY | Tin | No | e1 | 625W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 229A | 600V | 1.5V | 96 ns | 600V | 229A | 435 ns | 400V, 100A, 1 Ω, 15V | 30V | 6.5V | 1.85V @ 15V, 100A | Trench Field Stop | 600nC | 300A | 31ns/310ns | 4.75mJ (on), 2.675mJ (off) | |||||||||||||||||||||||||||||||
| MMIX1X200N60B3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-mmix1x200n60b3h1-datasheets-2565.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 12 Weeks | 24 | 520W | IXG*200N60 | Single | 520W | 100 ns | 600V | 1.7V | 175A | 360V, 100A, 1 Ω, 15V | 1.7V @ 15V, 100A | 315nC | 1000A | 48ns/160ns | 2.85mJ (on), 2.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKP15N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikp15n65h5xksa1-datasheets-2567.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 16 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 105W | NOT SPECIFIED | Single | NOT SPECIFIED | 105W | 48 ns | 650V | 1.65V | 1.65V | 30A | 400V, 7.5A, 39 Ω, 15V | 2.1V @ 15V, 15A | 38nC | 45A | 17ns/160ns | 120μJ (on), 50μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| APT85GR120B2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt85gr120b2-datasheets-2509.pdf | TO-247-3 | Lead Free | 19 Weeks | 3 | EAR99 | No | 962W | Single | 962W | 1.2kV | 1.2kV | 170A | 1200V | 600V, 85A, 4.3 Ω, 15V | 3.2V @ 15V, 85A | NPT | 660nC | 340A | 43ns/300ns | 6mJ (on), 3.8mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25GN120SG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt25gr120b-datasheets-5619.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.08mm | 13.99mm | Lead Free | 2 | 25 Weeks | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | No | 272W | GULL WING | 245 | 3 | Single | 30 | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 22 ns | 280 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 67A | 1.2kV | 1.7V | 39 ns | 1.2kV | 67A | 1200V | 560 ns | 800V, 25A, 1 Ω, 15V | 6.5V | 2.1V @ 15V, 25A | Trench Field Stop | 155nC | 75A | 22ns/280ns | ||||||||||||||||||||||||||||||
| SGW13N60UFDTM | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-sgw13n60ufdtm-datasheets-2474.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 60W | 55ns | 62 ns | 600V | 13A | 253 ns | 300V, 6.5A, 50 Ω, 15V | 2.6V @ 15V, 6.5A | 25nC | 52A | 20ns/70ns | 85μJ (on), 95μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IXXH30N65B4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixxh30n65b4-datasheets-2513.pdf | TO-247-3 | Lead Free | 17 Weeks | 230W | Single | 230W | Insulated Gate BIP Transistors | 32 ns | 170 ns | N-CHANNEL | 650V | 1.66V | 2V | 65A | 400V, 30A, 15 Ω, 15V | 20V | 6.5V | 2V @ 15V, 30A | PT | 52nC | 146A | 32ns/170ns | 1.55mJ (on), 480μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| FGP3440G2-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, EcoSPARK® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Logic | ROHS3 Compliant | TO-220-3 | 4 Weeks | yes | NO | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 166W | 166W | 7000ns | 400V | 26.9A | 12V | 2.2V | 1.2V @ 4V, 6A | 24nC | 1μs/5.3μs | 15000ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTG50N60FWG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-ngtg50n60fwg-datasheets-2483.pdf | TO-247-3 | TO-247 | 223W | 600V | 100A | 400V, 50A, 10Ohm, 15V | 1.7V @ 15V, 50A | Trench | 310nC | 200A | 117ns/285ns | 1.1mJ (on), 1.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT35GN120BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt35gn120bg-datasheets-2484.pdf | 1.2kV | 94A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | yes | EAR99 | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 379W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 94A | TO-247AD | 1.2kV | 1.7V | 46 ns | 1.2kV | 94A | 1200V | 465 ns | 800V, 35A, 2.2 Ω, 15V | 30V | 6.5V | 2.1V @ 15V, 35A | NPT, Trench Field Stop | 220nC | 105A | 24ns/300ns | 2.315mJ (off) | |||||||||||||||||||||||||||
| IXGT6N170A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh6n170a-datasheets-0586.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 4.500005g | yes | not_compliant | e3 | Matte Tin (Sn) | 75W | GULL WING | NOT SPECIFIED | IXG*6N170 | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 75W | 1.7kV | 7V | 91 ns | 1.7kV | 6A | 1700V | 271 ns | 850V, 6A, 33 Ω, 15V | 20V | 5V | 7V @ 15V, 3A | NPT | 18.5nC | 14A | 46ns/220ns | 590μJ (on), 180μJ (off) | 65ns | |||||||||||||||||||||||||||||||
| APT80GA90B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt64ga90ld30-datasheets-0837.pdf | TO-247-3 | 3 | 32 Weeks | LOW CONDUCTION LOSS | No | 625W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 625W | 900V | 49 ns | 900V | 145A | 320 ns | 600V, 47A, 4.7 Ω, 15V | 30V | 6V | 3.1V @ 15V, 47A | PT | 200nC | 239A | 18ns/149ns | 1652μJ (on), 1389μJ (off) |
