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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| SGL40N150DTU | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-sgl40n150dtu-datasheets-2777.pdf | TO-264-3, TO-264AA | 3 | yes | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 200W | 300ns | 320 ns | 1.5V | 40A | 475 ns | 4.7V @ 15V, 40A | 140nC | 120A | |||||||||||||||||||||||||||||||||||||||||||||
| IRGP4660D-EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-irgp4660depbf-datasheets-2719.pdf | TO-247-3 | 26 Weeks | 3 | EAR99 | No | 330W | Single | 134W | 330W | 115 ns | 600V | 1.9V | 1.9V | 100A | 400V, 48A, 10 Ω, 15V | 1.9V @ 15V, 48A | 140nC | 144A | 60ns/145ns | 625μJ (on), 1.28mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBX25N250 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/ixys-ixbx25n250-datasheets-2725.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | LOW CONDUCTION LOSS | unknown | e1 | TIN SILVER COPPER | 300W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 1.6 μs | 2.5kV | 694 ns | 3.3V | 55A | 2500V | 650 ns | 20V | 5V | 3.3V @ 15V, 25A | 103nC | 180A | |||||||||||||||||||||||||||||||||
| IKA15N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineon-ika15n65h5xksa1-datasheets-1346.pdf | TO-220-3 | 10.65mm | 16.15mm | 4.85mm | Lead Free | 16 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 33.3W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 33.3W | 48 ns | 650V | 1.65V | 650V | 14A | 400V, 7.5A, 39 Ω, 15V | 20V | 4.8V | 2.1V @ 15V, 15A | 38nC | 45A | 17ns/160ns | 120μJ (on), 50μJ (off) | |||||||||||||||||||||||||||||||||||
| IRGP4660DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/infineontechnologies-irgp4660depbf-datasheets-2719.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 26 Weeks | No SVHC | 3 | EAR99 | No | 330W | Single | 134W | Insulated Gate BIP Transistors | N-CHANNEL | 330W | 115 ns | 600V | 1.6V | 1.9V | 100A | 56ns | 400V, 48A, 10 Ω, 15V | 20V | 6.5V | 1.9V @ 15V, 48A | 140nC | 144A | 60ns/145ns | 625μJ (on), 1.28mJ (off) | 46ns | |||||||||||||||||||||||||||||||||||||||
| APT50GT60BRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gt60brg-datasheets-2740.pdf | 600V | 110A | TO-247-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 446W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 46 ns | 600V | 110A | 365 ns | 400V, 50A, 4.3 Ω, 15V | 2.5V @ 15V, 50A | NPT | 240nC | 150A | 14ns/240ns | 995μJ (on), 1070μJ (off) | ||||||||||||||||||||||||||||||||||||
| IGW50N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | TO-247-3 | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 333W | 54 ns | 600V | 100A | 297 ns | 400V, 50A, 7 Ω, 15V | 2.3V @ 15V, 50A | Trench Field Stop | 315nC | 200A | 23ns/235ns | 2.36mJ | ||||||||||||||||||||||||||||||||||||||||
| SGS13N60UFDTU | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-sgs13n60ufdtu-datasheets-2748.pdf | TO-220-3 Full Pack | 3 | yes | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | MOTOR CONTROL | N-CHANNEL | 45W | 55ns | 62 ns | 600V | 13A | 253 ns | 300V, 6.5A, 50 Ω, 15V | 2.6V @ 15V, 6.5A | 25nC | 52A | 20ns/70ns | 85μJ (on), 95μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| RGTH80TS65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | TO-247-3 | Lead Free | 3 | 17 Weeks | Unknown | 3 | EAR99 | NO | 234W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 650V | 1.6V | 84 ns | 70A | 194 ns | 400V, 40A, 10 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 79nC | 160A | 34ns/120ns | |||||||||||||||||||||||||||||||||||||||||||||
| APT20GT60BRDQ1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt20gt60brdq1g-datasheets-2763.pdf | 600V | 43A | TO-247-3 | Lead Free | 3 | 25 Weeks | yes | No | e1 | TIN SILVER COPPER | 174W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 17 ns | 600V | 43A | 160 ns | 400V, 20A, 5 Ω, 15V | 30V | 5V | 2.5V @ 15V, 20A | NPT | 100nC | 80A | 8ns/80ns | 215μJ (on), 245μJ (off) | |||||||||||||||||||||||||||||||||||
| AUIRGP35B60PD | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-auirgp35b60pd-datasheets-2686.pdf | TO-247-3 | TO-247AC | 308W | 600V | 60A | 390V, 22A, 3.3Ohm, 15V | 2.55V @ 15V, 35A | NPT | 160nC | 120A | 26ns/110ns | 220μJ (on), 215μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA30N120FTDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/onsemiconductor-fga30n120ftdtu-datasheets-2691.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 10 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 339W | NOT SPECIFIED | Single | NOT SPECIFIED | 339W | 1 | Insulated Gate BIP Transistors | Not Qualified | 31 ns | 198 ns | SILICON | POWER CONTROL | N-CHANNEL | 730ns | 1.2kV | 2V | 167 ns | 1.2kV | 60A | 1200V | 575 ns | 25V | 7.5V | 2V @ 15V, 30A | Trench Field Stop | 208nC | 90A | ||||||||||||||||||||||||||||
| NGTB60N65FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/onsemiconductor-ngtb60n65fl2wg-datasheets-2700.pdf | TO-247-3 | Lead Free | 18 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 595W | 595W | 96 ns | 650V | 1.64V | 2V | 100A | 400V, 60A, 10 Ω, 15V | 2V @ 15V, 60A | Field Stop | 318nC | 240A | 117ns/265ns | 1.59mJ (on), 660μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IKP30N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | TO-220-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 188W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 188W | TO-220AB | 51 ns | 650V | 28 ns | 650V | 55A | 224 ns | 400V, 15A, 23 Ω, 15V | 2.1V @ 15V, 30A | Trench | 70nC | 90A | 19ns/177ns | 280μJ (on), 100μJ (off) | ||||||||||||||||||||||||||||||||||||
| APT43GA90BD30 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt43ga90bd30-datasheets-2709.pdf | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | 3 | 25 Weeks | 38.000013g | yes | EAR99 | LOW CONDUCTION LOSS | No | Pure Matte Tin (Sn) | 337W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 78A | 900V | 2.5V | 28 ns | 900V | 78A | 246 ns | 600V, 25A, 4.7 Ω, 15V | 3.1V @ 15V, 47A | PT | 116nC | 129A | 12ns/82ns | 875μJ (on), 425μJ (off) | |||||||||||||||||||||||||||||||||||
| STGP20V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp20v60f-datasheets-2712.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | 20 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 167W | STGP20 | Single | 167W | 600V | 2.2V | 600V | 40A | 400V, 20A, 15V | 2.2V @ 15V, 20A | Trench Field Stop | 116nC | 80A | 38ns/149ns | 200μJ (on), 130μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| RGTH00TS65GC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgth00ts65gc11-datasheets-2632.pdf | TO-247-3 | 3 | 17 Weeks | 38.000013g | Unknown | 3 | yes | EAR99 | 277W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 50A | 277W | 650V | 1.6V | 102 ns | 650V | 85A | 221 ns | 400V, 50A, 10 Ω, 15V | 2.1V @ 15V, 50A | Trench Field Stop | 94nC | 200A | 39ns/143ns | ||||||||||||||||||||||||||||||||||||||||
| APT36GA60B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | TO-247-3 | 3 | 29 Weeks | yes | LOW CONDUCTION LOSS | No | e3 | PURE MATTE TIN | 290W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | TO-247AD | 600V | 29 ns | 600V | 65A | 262 ns | 400V, 20A, 10 Ω, 15V | 30V | 6V | 2.5V @ 15V, 20A | PT | 102nC | 109A | 16ns/122ns | 307μJ (on), 254μJ (off) | ||||||||||||||||||||||||||||||||||||
| APT43GA90B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt43ga90b-datasheets-2646.pdf | TO-247-3 | 3 | 6 Weeks | yes | LOW CONDUCTION LOSSES | No | e1 | TIN SILVER COPPER | 337W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 337W | 900V | 28 ns | 900V | 78A | 246 ns | 600V, 25A, 4.7 Ω, 15V | 3.1V @ 15V, 25A | PT | 116nC | 129A | 12ns/82ns | 875μJ (on), 425μJ (off) | |||||||||||||||||||||||||||||||||||||||
| APT30GS60BRDQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gs60brdq2g-datasheets-2648.pdf | TO-247-3 | 25 Weeks | no | No | 250W | Single | 250W | 25 ns | 600V | 600V | 54A | 400V, 30A, 9.1 Ω, 15V | 3.15V @ 15V, 30A | NPT | 145nC | 113A | 16ns/360ns | 570μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FGAF40N60SMD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgaf40n60smd-datasheets-2650.pdf | TO-3P-3 Full Pack | 15.7mm | 26.7mm | 3.2mm | Lead Free | 3 | 8 Weeks | 6.962g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 115W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | MOTOR CONTROL | N-CHANNEL | 115W | 36 ns | 600V | 2.1V | 37 ns | 600V | 80A | 132 ns | 400V, 40A, 6 Ω, 15V | 20V | 6V | 1.9V @ 15V, 40A | Field Stop | 119nC | 120A | 12ns/92ns | 870μJ (on), 260μJ (off) | 17ns | |||||||||||||||||||||||||||
| IKP15N65F5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikp15n65f5xksa1-datasheets-2657.pdf | TO-220-3 | Lead Free | 16 Weeks | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 105W | NOT SPECIFIED | Single | NOT SPECIFIED | 105W | 50 ns | 650V | 1.6V | 1.6V | 30A | 400V, 7.5A, 39 Ω, 15V | 2.1V @ 15V, 15A | 38nC | 45A | 17ns/150ns | 130μJ (on), 40μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IGW50N65F5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw50n65f5fksa1-datasheets-2663.pdf | TO-247-3 | Lead Free | 16 Weeks | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | 305W | NOT SPECIFIED | Single | NOT SPECIFIED | 305W | 650V | 1.6V | 1.6V | 80A | 400V, 25A, 12 Ω, 15V | 2.1V @ 15V, 50A | 120nC | 150A | 21ns/175ns | 490μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IXBT20N300HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixbt20n300hv-datasheets-2669.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 8 Weeks | not_compliant | e3 | Matte Tin (Sn) | 250W | Insulated Gate BIP Transistors | N-CHANNEL | 250W | 1.35 μs | 3kV | 3.2V | 50A | 3000V | 20V | 5V | 3.2V @ 15V, 20A | 105nC | 140A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW75N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/infineontechnologies-ikw75n60h3fksa1-datasheets-2671.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | 428W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 428W | 190 ns | 600V | 2.3V | 600V | 80A | 400V, 75A, 5.2 Ω, 15V | 2.3V @ 15V, 75A | Trench Field Stop | 470nC | 225A | 31ns/265ns | 3mJ (on), 1.7mJ (off) | |||||||||||||||||||||||||||||||||||
| STGP10M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp10m65df2-datasheets-2598.pdf | TO-220-3 | 30 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 115W | NOT SPECIFIED | STGP10 | Single | NOT SPECIFIED | 115W | 96 ns | 650V | 1.55V | 2V | 20A | 400V, 10A, 22 Ω, 15V | 2V @ 15V, 10A | Trench Field Stop | 28nC | 40A | 19ns/91ns | 120μJ (on), 270μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| RGT00TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | TO-247-3 | 3 | 17 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 277W | 54ns | 110 ns | 650V | 85A | 225 ns | 400V, 50A, 10 Ω, 15V | 2.1V @ 15V, 50A | Trench Field Stop | 94nC | 150A | 42ns/137ns | |||||||||||||||||||||||||||||||||||||||||||||||
| RGT80TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgt80ts65dgc11-datasheets-2601.pdf | TO-247-3 | 3 | 17 Weeks | 38.000013g | Unknown | 3 | yes | EAR99 | 234W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 40A | 234W | 58 ns | 650V | 1.65V | 90 ns | 650V | 70A | 206 ns | 400V, 40A, 10 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 79nC | 120A | 34ns/119ns | |||||||||||||||||||||||||||||||||||||||
| IKA10N60TXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ika10n60txksa1-datasheets-2613.pdf | TO-220-3 Full Pack | 3 | 26 Weeks | HIGH SWITCHING SPEED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 30W | TO-220AB | 115ns | 21 ns | 600V | 11.7A | 296 ns | 400V, 10A, 23 Ω, 15V | 2.05V @ 15V, 10A | Trench Field Stop | 62nC | 30A | 12ns/215ns | 430μJ | |||||||||||||||||||||||||||||||||||||||
| IXBH20N300 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixbt20n300-datasheets-3168.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | 1.35 μs | 3kV | 608 ns | 3.2V | 50A | 3000V | 695 ns | 20V | 5V | 3.2V @ 15V, 20A | 105nC | 140A |
