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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| NGTG50N60FWG | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | Standard | ROHS3 Compliant | /files/rochesterelectronicsllc-ngtg50n60fwg-datasheets-2483.pdf | TO-247-3 | TO-247 | 223W | 600V | 100A | 400V, 50A, 10Ohm, 15V | 1.7V @ 15V, 50A | Trench | 310nC | 200A | 117ns/285ns | 1.1mJ (on), 1.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT35GN120BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt35gn120bg-datasheets-2484.pdf | 1.2kV | 94A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | yes | EAR99 | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 379W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 94A | TO-247AD | 1.2kV | 1.7V | 46 ns | 1.2kV | 94A | 1200V | 465 ns | 800V, 35A, 2.2 Ω, 15V | 30V | 6.5V | 2.1V @ 15V, 35A | NPT, Trench Field Stop | 220nC | 105A | 24ns/300ns | 2.315mJ (off) | ||||||||||||||||||||||||||||
| IXGT6N170A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh6n170a-datasheets-0586.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 4.500005g | yes | not_compliant | e3 | Matte Tin (Sn) | 75W | GULL WING | NOT SPECIFIED | IXG*6N170 | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 75W | 1.7kV | 7V | 91 ns | 1.7kV | 6A | 1700V | 271 ns | 850V, 6A, 33 Ω, 15V | 20V | 5V | 7V @ 15V, 3A | NPT | 18.5nC | 14A | 46ns/220ns | 590μJ (on), 180μJ (off) | 65ns | ||||||||||||||||||||||||||||||||
| APT80GA90B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt64ga90ld30-datasheets-0837.pdf | TO-247-3 | 3 | 32 Weeks | LOW CONDUCTION LOSS | No | 625W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 625W | 900V | 49 ns | 900V | 145A | 320 ns | 600V, 47A, 4.7 Ω, 15V | 30V | 6V | 3.1V @ 15V, 47A | PT | 200nC | 239A | 18ns/149ns | 1652μJ (on), 1389μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IXYH24N170C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/ixys-ixyh24n170c-datasheets-2492.pdf | TO-247-3 | 28 Weeks | yes | 500W | 30ns | 1700V | 58A | 960V, 30A, 15 Ω, 15V | 3.8V @ 15V, 20A | 96nC | 145A | 12ns/160ns | 4.9mJ (on), 1.95mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH32N120A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/ixys-ixgt32n120a3-datasheets-2443.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | 2.15nF | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | TO-247AD | 1.2kV | 2.35V | 239 ns | 1.2kV | 75A | 1200V | 1380 ns | 20V | 5V | 2.35V @ 15V, 32A | PT | 89nC | 230A | ||||||||||||||||||||||||||||||||||||
| HGTG20N60B3 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~150°C TJ | Tube | 3 (168 Hours) | Standard | Non-RoHS Compliant | /files/rochesterelectronicsllc-hgtg20n60b3-datasheets-2496.pdf | TO-247-3 | 3 | yes | LOW CONDUCTION LOSS | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 165W | 45 ns | 600V | 40A | 360 ns | 480V, 20A, 10 Ω, 15V | 2V @ 15V, 20A | 80nC | 160A | 475μJ (on), 1.05mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IXXK200N65B4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixxx200n65b4-datasheets-4857.pdf | TO-264-3, TO-264AA | 28 Weeks | unknown | 1.15kW | Single | 1.15kW | Insulated Gate BIP Transistors | N-CHANNEL | 1150W | 650V | 1.4V | 1.7V | 370A | 400V, 100A, 1 Ω, 15V | 20V | 6.5V | 1.7V @ 15V, 160A | PT | 553nC | 1000A | 62ns/245ns | 4.4mJ (on), 2.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXK110N65B4H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixxx110n65b4h1-datasheets-5526.pdf | TO-264-3, TO-264AA | Lead Free | 18 Weeks | unknown | 880W | 110N65 | Single | 880W | Insulated Gate BIP Transistors | N-CHANNEL | 100 ns | 650V | 1.75V | 650V | 240A | 400V, 55A, 2 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 110A | PT | 183nC | 630A | 38ns/156ns | 2.2mJ (on), 1.05mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB20N135IHRWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 1999 | /files/onsemiconductor-ngtb20n135ihrwg-datasheets-2458.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 11 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | e3 | Halogen Free | NO | 394W | 3 | Single | 394W | Insulated Gate BIP Transistors | N-CHANNEL | 1.35kV | 2.2V | 1.35kV | 40A | 1350V | 600V, 20A, 10 Ω, 15V | 20V | 6.5V | 2.65V @ 15V, 20A | Trench Field Stop | 234nC | 120A | -/245ns | 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXXH50N60C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixxh50n60c3d1-datasheets-2463.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 6.500007g | 3 | yes | No | 600W | IXX*N60 | 3 | Single | 600W | 1 | Insulated Gate BIP Transistors | 24 ns | 62 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 25 ns | 600V | 2.3V | 69 ns | 600V | 100A | 170 ns | 360V, 36A, 5 Ω, 15V | 20V | 5.5V | 2.3V @ 15V, 36A | PT | 64nC | 200A | 24ns/62ns | 720μJ (on), 330μJ (off) | |||||||||||||||||||||||||||||||||||
| STGF20NB60S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf20nb60s-datasheets-2466.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 40W | STGF20 | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | ISOLATED | MOTOR CONTROL | N-CHANNEL | 40W | TO-220AB | 600V | 162 ns | 600V | 24A | 3600 ns | 480V, 20A, 100 Ω, 15V | 20V | 5V | 1.7V @ 15V, 20A | 83nC | 70A | 92ns/1.1μs | 840μJ (on), 7.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXXH60N65B4H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/ixys-ixxh60n65b4h1-datasheets-2470.pdf | TO-247-3 | 14 Weeks | No SVHC | 3 | EAR99 | 380W | Single | 380W | Insulated Gate BIP Transistors | N-CHANNEL | 150ns | 650V | 1.7V | 2V | 116A | 400V, 60A, 5 Ω, 15V | 20V | 6.5V | 2V @ 15V, 60A | PT | 95nC | 230A | 37ns/145ns | 3.13mJ (on), 1.15mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXBH16N170A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixbt16n170a-datasheets-2439.pdf | 1.7kV | 16A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | LOW SWITCHING LOSSES | No | 150W | 3 | Single | 150W | 1 | Insulated Gate BIP Transistors | 15 ns | 25ns | 160 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AD | 360 ns | 1.7kV | 43 ns | 1.7kV | 16A | 1700V | 370 ns | 1360V, 10A, 10 Ω, 15V | 20V | 5.5V | 6V @ 15V, 10A | 65nC | 40A | 15ns/160ns | 1.2mJ (off) | 100ns | |||||||||||||||||||||||||||||
| IKP20N65H5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ikp20n65h5xksa1-datasheets-2428.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 125W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 125W | TO-220AB | 52 ns | 650V | 28 ns | 650V | 42A | 218 ns | 400V, 10A, 32 Ω, 15V | 2.1V @ 15V, 20A | Trench | 48nC | 60A | 18ns/156ns | 170μJ (on), 60μJ (off) | |||||||||||||||||||||||||||||||||||||||
| STGW15H120DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa15h120df2-datasheets-0252.pdf | TO-247-3 | 32 Weeks | 38.000013g | ACTIVE (Last Updated: 7 months ago) | EAR99 | 259W | NOT SPECIFIED | STGW15 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 259W | 231 ns | 1.2kV | 2.1V | 1.2kV | 30A | 1200V | 600V, 15A, 10 Ω, 15V | 20V | 7V | 2.6V @ 15V, 15A | Trench Field Stop | 67nC | 60A | 23ns/111ns | 380μJ (on), 370μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IGW25T120FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/infineontechnologies-igw25t120fksa1-datasheets-2436.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | TO-247AD | 82 ns | 1200V | 50A | 790 ns | 600V, 25A, 22 Ω, 15V | 2.2V @ 15V, 25A | NPT, Trench Field Stop | 155nC | 75A | 50ns/560ns | 4.2mJ | |||||||||||||||||||||||||||||||||||||||||
| IXBT16N170A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixbt16n170a-datasheets-2439.pdf | 1.7kV | 16A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 2 | 26 Weeks | 4.500005g | yes | LOW SWITCHING LOSSES | not_compliant | e3 | Matte Tin (Sn) | 150W | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 150W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | 15 ns | 220 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 360 ns | 1.7kV | 43 ns | 1.7kV | 16A | 1700V | 370 ns | 1360V, 10A, 10 Ω, 15V | 20V | 5.5V | 6V @ 15V, 10A | 65nC | 40A | 15ns/160ns | 1.2mJ (off) | 100ns | |||||||||||||||||||||||||
| IXGP30N120B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixga30n120b3-datasheets-2400.pdf | TO-220-3 | 3 | 26 Weeks | 2.299997g | No SVHC | 3 | yes | EAR99 | LOW CONDUCTION LOSS | e3 | Matte Tin (Sn) | 300W | SINGLE | NOT SPECIFIED | IXG*30N120 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | TO-220AB | 1.2kV | 3.5V | 56 ns | 3.5V | 60A | 1200V | 471 ns | 960V, 30A, 5 Ω, 15V | 20V | 5V | 3.5V @ 15V, 30A | PT | 87nC | 150A | 16ns/127ns | 3.47mJ (on), 2.16mJ (off) | ||||||||||||||||||||||||||||||
| IXGT32N120A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/ixys-ixgt32n120a3-datasheets-2443.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | unknown | e3 | PURE TIN | 300W | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 1.2kV | 239 ns | 2.35V | 75A | 1200V | 1380 ns | 20V | 5V | 2.35V @ 15V, 32A | PT | 89nC | 230A | ||||||||||||||||||||||||||||||||||||||
| IXGH2N250 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh2n250-datasheets-2445.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 32W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 32W | TO-247AD | 2.5kV | 115 ns | 3.1V | 5.5A | 2500V | 278 ns | 20V | 5.5V | 3.1V @ 15V, 2A | 10.5nC | 13.5A | |||||||||||||||||||||||||||||||||||||||
| SGP23N60UFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-sgp23n60uftu-datasheets-2447.pdf | 600V | 23A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 12 hours ago) | yes | EAR99 | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | No | 8541.29.00.95 | e3 | Tin (Sn) | 100W | SG*23N60 | Single | 100W | 1 | Insulated Gate BIP Transistors | 17 ns | 60 ns | SILICON | MOTOR CONTROL | N-CHANNEL | 23A | TO-220AB | 600V | 2.1V | 55 ns | 600V | 23A | 320 ns | 300V, 12A, 23 Ω, 15V | 20V | 7.5V | 2.6V @ 15V, 12A | 92A | 17ns/60ns | 115μJ (on), 135μJ (off) | 280ns | ||||||||||||||||||||||||||||
| IXGH50N90B2D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/ixys-ixgk50n90b2d1-datasheets-0677.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 400W | NOT SPECIFIED | IXG*50N90 | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 20 ns | 350 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 200ns | 900V | 2.2V | 48 ns | 900V | 75A | 820 ns | 720V, 50A, 5 Ω, 15V | 2.7V @ 15V, 50A | PT | 135nC | 200A | 20ns/350ns | 4.7mJ (off) | ||||||||||||||||||||||||||||||||||
| NGTB20N120IHRWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/onsemiconductor-ngtb20n120ihrwg-datasheets-2396.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NO | 384W | 3 | Single | 384W | Insulated Gate BIP Transistors | N-CHANNEL | 1.2kV | 2.1V | 1.2kV | 40A | 1200V | 600V, 20A, 10 Ω, 15V | 20V | 6.5V | 2.45V @ 15V, 20A | Trench Field Stop | 225nC | 120A | -/235ns | 450μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXGA30N120B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixga30n120b3-datasheets-2400.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | No SVHC | 3 | yes | EAR99 | LOW CONDUCTION LOSS | unknown | e3 | PURE TIN | 300W | GULL WING | NOT SPECIFIED | IXG*30N120 | 4 | Single | NOT SPECIFIED | 300W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 2.96V | 56 ns | 1.2kV | 60A | 1200V | 471 ns | 960V, 30A, 5 Ω, 15V | 20V | 5V | 3.5V @ 15V, 30A | PT | 87nC | 150A | 16ns/127ns | 3.47mJ (on), 2.16mJ (off) | ||||||||||||||||||||||||||||||
| STGP30H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw30h60df-datasheets-9802.pdf | TO-220-3 | Lead Free | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 260W | STGP30 | Single | 260W | Insulated Gate BIP Transistors | N-CHANNEL | 110 ns | 600V | 2.4V | 600V | 60A | 400V, 30A, 10 Ω, 15V | 20V | 2.4V @ 15V, 30A | Trench Field Stop | 105nC | 120A | 50ns/160ns | 350μJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB40N120FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/onsemiconductor-ngtb40n120fl2wg-datasheets-2406.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 13 Weeks | 6.500007g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | 535W | 3 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 535W | 240 ns | 1.2kV | 2V | 1.2kV | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 40A | Trench Field Stop | 313nC | 200A | 116ns/286ns | 3.4mJ (on), 1.1mJ (off) | |||||||||||||||||||||||||||||||||||||||
| HGTG5N120BND | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-hgtp5n120bnd-datasheets-1150.pdf | 1.2kV | 21A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 6.39g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | Tin | No | 8541.29.00.95 | e3 | 167W | Single | 167W | 1 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 21A | 600V | 65 ns | 1.2kV | 2.45V | 35 ns | 1.2kV | 21A | 1200V | 357 ns | 960V, 5A, 25 Ω, 15V | 2.7V @ 15V, 5A | NPT | 53nC | 40A | 22ns/160ns | 450μJ (on), 390μJ (off) | |||||||||||||||||||||||||||||||
| IKA15N60TXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ika15n60txksa1-datasheets-2420.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | EAR99 | HIGH SWITCHING SPEED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 35.7W | TO-220AB | 34ns | 32 ns | 600V | 14.7A | 291 ns | 400V, 15A, 15 Ω, 15V | 2.05V @ 15V, 15A | Trench Field Stop | 87nC | 45A | 17ns/188ns | 570μJ | ||||||||||||||||||||||||||||||||||||||||||
| NGTB40N120IHRWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/onsemiconductor-ngtb40n120ihrwg-datasheets-2337.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 8 Weeks | 6.500007g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NO | 384W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 384W | 1.2kV | 2.3V | 1.2kV | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.55V @ 15V, 40A | Trench Field Stop | 225nC | 120A | -/230ns | 950μJ (off) |
