Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Input Capacitance | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Drain to Source Voltage (Vdss) | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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IRG7PH50UPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineontechnologies-irg7ph50uep-datasheets-0479.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 556W | Single | 1 | Insulated Gate BIP Transistors | 35 ns | 430 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 556W | TO-247AC | 1.2kV | 1.7V | 75 ns | 2V | 140A | 60ns | 1200V | 710 ns | 600V, 50A, 5 Ω, 15V | 6V | 2V @ 15V, 50A | Trench | 290nC | 150A | 35ns/430ns | 3.6mJ (on), 2.2mJ (off) | 65ns | ||||||||||||||||||||||||||||||||||||||
STGW35NC120HD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw35nc120hd-datasheets-0818.pdf | TO-247-3 | 16.03mm | 21.09mm | 5.16mm | Lead Free | 3 | 38.000013g | EAR99 | No | 235W | STGW35 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 29 ns | 275 ns | SILICON | POWER CONTROL | N-CHANNEL | 152 ns | 1.2kV | 41 ns | 1.2kV | 58A | 1200V | 60A | 928 ns | 960V, 20A, 10 Ω, 15V | 25V | 5.75V | 2.75V @ 15V, 20A | 110nC | 135A | 29ns/275ns | 1.66mJ (on), 4.44mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
IXGH24N170A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgh24n170a-datasheets-0846.pdf | TO-247-3 | 3 | 30 Weeks | 6.500007g | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | NOT SPECIFIED | IXG*24N170 | 3 | Single | NOT SPECIFIED | 250W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.7kV | 4.5V | 98 ns | 1.7kV | 24A | 1700V | 275 ns | 850V, 24A, 10 Ω, 15V | 20V | 5V | 6V @ 15V, 16A | NPT | 140nC | 75A | 21ns/336ns | 2.97mJ (on), 790μJ (off) | 80ns | |||||||||||||||||||||||||||||||||||||||
IXXH100N60C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixxh100n60c3-datasheets-0820.pdf | TO-247-3 | 3 | 28 Weeks | 6.500007g | 830W | SINGLE | IXX*N60 | 3 | 830W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 2.2V | 95 ns | 2.2V | 190A | 220 ns | 360V, 70A, 2 Ω, 15V | 20V | 5.5V | 2.2V @ 15V, 70A | PT | 150nC | 380A | 30ns/90ns | 2mJ (on), 950μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
IXGR32N90B2D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/ixys-ixgr32n90b2d1-datasheets-0822.pdf | ISOPLUS247™ | 3 | 26 Weeks | 247 | yes | unknown | e1 | TIN SILVER COPPER | 160W | NOT SPECIFIED | IXG*32N90 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 160W | 190 ns | 900V | 2.9V | 42 ns | 900V | 47A | 690 ns | 720V, 32A, 5 Ω, 15V | 2.9V @ 15V, 32A | PT | 89nC | 200A | 20ns/260ns | 2.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
IXGX72N60B3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgx72n60b3h1-datasheets-0823.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | yes | EAR99 | LOW CONDUCTION LOSS | unknown | e1 | TIN SILVER COPPER | 540W | SINGLE | NOT SPECIFIED | IXG*72N60 | 3 | NOT SPECIFIED | 540W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 140 ns | 600V | 1.5V | 63 ns | 1.8V | 75A | 370 ns | 480V, 50A, 3 Ω, 15V | 20V | 5V | 1.8V @ 15V, 60A | PT | 225nC | 450A | 31ns/152ns | 1.4mJ (on), 1mJ (off) | 150ns | |||||||||||||||||||||||||||||||||||
IKQ120N60TAXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-ikq120n60taxksa1-datasheets-0825.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | Halogen Free | 833W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 833W | 280 ns | 600V | 84 ns | 600V | 160A | 398 ns | 400V, 120A, 3 Ω, 15V | 2V @ 15V, 120A | Trench Field Stop | 772nC | 480A | 33ns/310ns | 4.1mJ (on), 2.8mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
IXBT2N250-TR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Surface Mount | -55°C~150°C TJ | Standard | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 32W | 920ns | 2500V | 5A | 2000V, 2A, 47 Ω, 15V | 3.5V @ 15V, 2A | 10.6nC | 13A | 30ns/70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXA30RG1200DHG-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/ixys-ixa30rg1200dhgtrr-datasheets-0829.pdf | 9-SMD Module | 147W | 1200V | 43A | 600V, 25A, 39 Ω, 15V | 2.1V @ 15V, 25A | 76nC | 70ns/250ns | 2.5mJ (on), 3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGC4067B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/infineontechnologies-irgc4067b-datasheets-0830.pdf | Die | 16 Weeks | EAR99 | Insulated Gate BIP Transistors | N-CHANNEL | 120A | 600V | 400V, 120A, 4.7 Ω, 15V | 20V | 6.5V | 2.05V @ 15V, 120A | Trench | 240nC | 50ns/160ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGK72N60A3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgk72n60a3h1-datasheets-0832.pdf | TO-264-3, TO-264AA | 3 | 8 Weeks | yes | LOW CONDUCTION LOSS | unknown | e1 | TIN SILVER COPPER | 540W | SINGLE | NOT SPECIFIED | IXG*72N60 | 3 | NOT SPECIFIED | 540W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 140ns | 600V | 1.35V | 63 ns | 1.35V | 75A | 885 ns | 480V, 50A, 3 Ω, 15V | 20V | 5V | 1.35V @ 15V, 60A | PT | 230nC | 400A | 31ns/320ns | 1.4mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||||||||||||||
IXBT16N170AHV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 | Standard | RoHS Compliant | 2014 | /files/ixys-ixbt16n170ahv-datasheets-0833.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | not_compliant | e3 | Matte Tin (Sn) | 150W | 25ns | 1700V | 16A | 1360V, 10A, 10 Ω, 15V | 6V @ 15V, 10A | 65nC | 40A | 15ns/250ns | 2.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYH100N65A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Tube | Standard | /files/ixys-ixyh100n65a3-datasheets-0834.pdf | TO-247-3 | 28 Weeks | compliant | 470W | 64ns | 650V | 240A | 400V, 50A, 2 Ω, 15V | 1.8V @ 15V, 70A | 178nC | 480A | 24ns/174ns | 3.15mJ (on), 2.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRG8CH97K10F | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | Die | 16 Weeks | 1200V | 600V, 100A, 1 Ω, 15V | 2V @ 15V, 100A | 600nC | 100ns/230ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT64GA90LD30 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt64ga90ld30-datasheets-0837.pdf | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | 3 | 29 Weeks | 10.6g | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 500W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 117A | 900V | 2.5V | 44 ns | 900V | 117A | 352 ns | 600V, 38A, 4.7 Ω, 15V | 3.1V @ 15V, 38A | PT | 162nC | 193A | 18ns/131ns | 1192μJ (on), 1088μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
IXXR100N60B3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | ROHS3 Compliant | 2013 | TO-247-3 | Lead Free | 3 | 6 Weeks | AVALANCHE RATED | 400W | SINGLE | 3 | 400W | 1 | Insulated Gate BIP Transistors | R-PSIP-T3 | SINGLE WITH BUILT-IN DIODE | ISOLATED | POWER CONTROL | N-CHANNEL | 140 ns | 600V | 1.5V | 92 ns | 1.8V | 145A | 350 ns | 360V, 70A, 2 Ω, 15V | 20V | 5.5V | 1.8V @ 15V, 70A | PT | 143nC | 440A | 30ns/120ns | 1.9mJ (on), 2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
IXA20RG1200DHG-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/ixys-ixa20rg1200dhgtrr-datasheets-0788.pdf | 9-SMD Module | 125W | 1200V | 32A | 600V, 15A, 56 Ω, 15V | 2.1V @ 15V, 15A | PT | 48nC | 1.55mJ (on), 1.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGT24N60C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™, Lightspeed™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgh24n60c-datasheets-3406.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | 4.500005g | yes | FAST SWITCHING | unknown | e3 | Matte Tin (Sn) | 150W | GULL WING | NOT SPECIFIED | IXG*24N60 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | 600V | 15 ns | 600V | 48A | 130 ns | 480V, 24A, 10 Ω, 15V | 20V | 5V | 2.5V @ 15V, 24A | 55nC | 96A | 15ns/75ns | 240μJ (off) | 110ns | |||||||||||||||||||||||||||||||||||||||
APT25GN120B2DQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt25gn120b2dq2g-datasheets-0789.pdf | 1.2kV | 67A | TO-247-3 Variant | Lead Free | 3 | 29 Weeks | 3 | yes | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 272W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 39 ns | 1.2kV | 67A | 1200V | 560 ns | 800V, 25A, 4.3 Ω, 15V | 6.5V | 2.1V @ 15V, 25A | NPT, Trench Field Stop | 155nC | 75A | 22ns/280ns | 2.15μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
IRG4PC50UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2001 | /files/infineontechnologies-irg4pc50udepbf-datasheets-3743.pdf | 600V | 55A | TO-247-3 | 15.87mm | 24.99mm | 5.3086mm | Contains Lead, Lead Free | 3 | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | ULTRA FAST SOFT RECOVERY | No | 200W | Single | 200W | 1 | Insulated Gate BIP Transistors | 150°C | 4nF | 46 ns | 25ns | 140 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 55A | TO-247AC | 50 ns | 600V | 2V | 71 ns | 600V | 55A | 370 ns | 480V, 27A, 5 Ω, 15V | 20V | 6V | 2V @ 15V, 27A | 180nC | 220A | 46ns/140ns | 990μJ (on), 590μJ (off) | ||||||||||||||||||||||||||||||||
IXGH25N120A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 1997 | /files/ixys-ixgh25n120a-datasheets-0801.pdf | TO-247-3 | 3 | 8 Weeks | 3 | HIGH SPEED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 200W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 200W | TO-247AD | 1.2kV | 350 ns | 1.2kV | 50A | 1200V | 1520 ns | 4 V | 960V, 25A, 33 Ω, 15V | 20V | 6V | 4V @ 15V, 25A | 130nC | 100A | 100ns/650ns | 11mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
IXGT64N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | -55°C~150°C TJ | 1 | Standard | RoHS Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | LOW CONDUCTION LOSS | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 460W | 460W | 41ns | 64 ns | 600V | 64A | 326 ns | 480V, 50A, 3 Ω, 15V | 20V | 5V | 1.8V @ 15V, 50A | PT | 168nC | 400A | 25ns/138ns | 1.5mJ (on), 1mJ (off) | 150ns | ||||||||||||||||||||||||||||||||||||||||||
IXGA8N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgp8n100-datasheets-4813.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 25 Weeks | 1.59999g | 3 | yes | EAR99 | LOW SATURATION VOLTAGE | not_compliant | e3 | Matte Tin (Sn) | 54W | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | 15 ns | 600 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 54W | 1kV | 2.7V | 15 ns | 1kV | 16A | 1000V | 900 ns | 800V, 8A, 120 Ω, 15V | 20V | 5.5V | 2.7V @ 15V, 8A | PT | 26.5nC | 32A | 15ns/600ns | 2.3mJ (off) | ||||||||||||||||||||||||||||||||||
IXGK50N60B2D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgx50n60b2d1-datasheets-5333.pdf | TO-264-3, TO-264AA | 3 | 10.000011g | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 400W | NOT SPECIFIED | IXG*50N60 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 400W | 35 ns | 600V | 2V | 43 ns | 600V | 75A | 430 ns | 480V, 40A, 5 Ω, 15V | 2V @ 15V, 40A | PT | 140nC | 200A | 18ns/190ns | 550μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
IXGT50N90B2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/ixys-ixgh50n90b2-datasheets-0569.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | 4.500005g | yes | unknown | e3 | PURE TIN | 400W | GULL WING | NOT SPECIFIED | IXG*50N90 | 4 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 400W | 900V | 2.7V | 48 ns | 900V | 75A | 820 ns | 720V, 50A, 5 Ω, 15V | 2.7V @ 15V, 50A | PT | 135nC | 200A | 20ns/350ns | 4.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
APT25GP120BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt25gp120bg-datasheets-0806.pdf | 1.2kV | 69A | TO-247-3 | Lead Free | 3 | 22 Weeks | yes | ULTRA FAST, LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 417W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.2kV | 26 ns | 1.2kV | 69A | 1200V | 197 ns | 600V, 25A, 5 Ω, 15V | 3.9V @ 15V, 25A | PT | 110nC | 90A | 12ns/70ns | 500μJ (on), 438μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
IXGH40N120A2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/ixys-ixgh40n120a2-datasheets-0808.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 360W | NOT SPECIFIED | IXG*40N120 | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 22 ns | 420 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.2kV | 2V | 55 ns | 1.2kV | 75A | 1200V | 2300 ns | 960V, 40A, 2 Ω, 15V | 2V @ 15V, 40A | PT | 136nC | 160A | 22ns/420ns | 15mJ (off) | ||||||||||||||||||||||||||||||||||||||||
IXXH40N65B4H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixxh40n65b4h1-datasheets-0809.pdf | TO-247-3 | 12 Weeks | 455W | 455W | 120 ns | 650V | 2V | 120A | 400V, 40A, 5 Ω, 15V | 2V @ 15V, 40A | PT | 77nC | 240A | 28ns/144ns | 1.4mJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIGC57T120R3LEX1SA3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-sigc57t120r3lex1sa3-datasheets-0810.pdf | Die | 13 Weeks | no | EAR99 | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 1.2kV | N-CHANNEL | 1.2kV | 1.2kV | 1200V | 20V | 6.5V | 2.1V @ 15V, 50A | Trench Field Stop | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXH140N65B4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX4™ | Through Hole | -55°C~175°C TJ | Standard | TO-247-3 | 28 Weeks | compliant | 1200W | 105ns | 650V | 340A | 400V, 100A, 4.7 Ω, 15V | 1.9V @ 15V, 120A | PT | 250nC | 840A | 54ns/270ns | 5.75mJ (on), 2.67mJ (off) |
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