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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IXGT16N170 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/ixys-ixgh16n170-datasheets-5612.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 3 | 24 Weeks | 4.500005g | yes | not_compliant | e3 | Matte Tin (Sn) | 190W | THROUGH-HOLE | NOT SPECIFIED | IXG*16N170 | 3 | Single | NOT SPECIFIED | 190W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.7kV | 2.7V | 90 ns | 1.7kV | 32A | 1700V | 1600 ns | 1360V, 16A, 10 Ω, 15V | 20V | 5V | 3.5V @ 15V, 16A | NPT | 78nC | 80A | 45ns/400ns | 9.3mJ (off) | 1100ns | |||||||||||||||||||||||||||||||||
| IKQ100N60TAXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ikq100n60taxksa1-datasheets-0763.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | Halogen Free | 714W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 714W | 225 ns | 600V | 83 ns | 600V | 160A | 393 ns | 400V, 100A, 3.6 Ω, 15V | 2V @ 15V, 100A | Trench Field Stop | 610nC | 400A | 30ns/290ns | 3.1mJ (on), 2.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| STGWA25S120DF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa25s120df3-datasheets-0766.pdf | TO-247-3 | 32 Weeks | No SVHC | ACTIVE (Last Updated: 7 months ago) | EAR99 | 375W | NOT SPECIFIED | STGWA25 | NOT SPECIFIED | 375W | 265 ns | 1.2kV | 2.1V | 50A | 1200V | 600V, 25A, 15 Ω, 15V | 2.1V @ 15V, 25A | Trench Field Stop | 80nC | 100A | 31ns/147ns | 830μJ (on), 2.37mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH240N30PB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 300V | 48A | 48A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBH10N170 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/ixys-ixbt10n170-datasheets-0704.pdf | TO-247-3 | 3 | 28 Weeks | 6.500007g | 3 | yes | e3 | Matte Tin (Sn) | 140W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 140W | TO-247AD | 360 ns | 1.7kV | 2.3V | 63 ns | 1.7kV | 20A | 1700V | 1800 ns | 1360V, 10A, 56 Ω, 15V | 20V | 5V | 3.8V @ 15V, 10A | 30nC | 40A | 35ns/500ns | 6mJ (off) | ||||||||||||||||||||||||||||||||||||
| IXGX64N60B3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | TO-247-3 | 3 | 30 Weeks | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 460W | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 35ns | 600V | 64 ns | 1.8V | 64A | 326 ns | 480V, 50A, 3 Ω, 15V | 20V | 5V | 1.8V @ 15V, 50A | PT | 168nC | 400A | 25ns/138ns | 1.5mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||
| IXGT72N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 20 Weeks | yes | LOW CONDUCTION LOSS | not_compliant | e3 | Matte Tin (Sn) | 540W | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 540W | 600V | 63 ns | 1.8V | 75A | 370 ns | 480V, 50A, 3 Ω, 15V | 20V | 5V | 1.8V @ 15V, 60A | PT | 230nC | 400A | 31ns/150ns | 1.38mJ (on), 1.05mJ (off) | 160ns | |||||||||||||||||||||||||||||||||||||
| IXDR35N60BD1 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixdr35n60bd1-datasheets-0736.pdf | ISOPLUS247™ | Lead Free | 3 | 32 Weeks | 3 | yes | HIGH SPEED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NPN | 125W | NOT SPECIFIED | IXD*35N60 | 3 | Single | NOT SPECIFIED | 125W | 1 | Not Qualified | 30 ns | 70ns | 320 ns | SILICON | ISOLATED | POWER CONTROL | 40ns | 600V | 2.2V | 75 ns | 600V | 38A | 390 ns | 300V, 35A, 10 Ω, 15V | 2.7V @ 15V, 35A | NPT | 140nC | 48A | 1.6mJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||||||||
| IXXH75N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Standard | RoHS Compliant | TO-247-3 | 3 | 28 Weeks | compliant | NO | SINGLE | 3 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 750W | 750W | TO-247AD | 75ns | 108 ns | 600V | 160A | 315 ns | 400V, 60A, 5 Ω, 15V | 20V | 5.5V | 1.85V @ 15V, 60A | PT | 107nC | 300A | 35ns/118ns | 1.7mJ (on), 1.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| IXXH75N60C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 3 | 28 Weeks | 750W | SINGLE | 3 | 175°C | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 750W | TO-247AD | 600V | 105 ns | 2.3V | 150A | 185 ns | 400V, 60A, 5 Ω, 15V | 20V | 5.5V | 2.3V @ 15V, 60A | PT | 107nC | 300A | 35ns/90ns | 1.6mJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| SKW25N120FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-skw25n120fksa1-datasheets-0737.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | 313W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 313W | 1 | Not Qualified | 40ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 90 ns | 1.2kV | 86 ns | 1.2kV | 46A | 1200V | 862 ns | 800V, 25A, 22 Ω, 15V | 3.6V @ 15V, 25A | NPT | 225nC | 84A | 45ns/730ns | 3.7mJ | |||||||||||||||||||||||||||||||||||||||
| APT64GA90B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt64ga90b-datasheets-0743.pdf | TO-247-3 | 3 | 29 Weeks | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 500W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 500W | 900V | 44 ns | 900V | 117A | 352 ns | 600V, 38A, 4.7 Ω, 15V | 3.1V @ 15V, 38A | PT | 162nC | 193A | 18ns/131ns | 1857μJ (on), 2311μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| ITF48IF1200HR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Standard | TO-247-3 | 28 Weeks | 390W | 1200V | 72A | 600V, 40A, 12 Ω, 15V | 2.4V @ 15V, 40A | Trench | 175nC | 26ns/350ns | 3mJ (on), 2.4mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGR60N60C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/ixys-ixgr60n60c3d1-datasheets-0745.pdf | ISOPLUS247™ | 3 | 30 Weeks | 247 | yes | unknown | e1 | TIN SILVER COPPER | 170W | NOT SPECIFIED | IXG*60N60 | 3 | Single | NOT SPECIFIED | 170W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSIP-T3 | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 25 ns | 600V | 2.5V | 54 ns | 2.5V | 75A | 198 ns | 480V, 40A, 3 Ω, 15V | 20V | 5V | 2.5V @ 15V, 40A | PT | 115nC | 260A | 21ns/70ns | 800μJ (on), 450μJ (off) | |||||||||||||||||||||||||||||||||||
| APT54GA60B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt54ga60b-datasheets-0746.pdf | TO-247-3 | 3 | 29 Weeks | yes | LOW CONDUCTION LOSS | No | e3 | PURE MATTE TIN | 416W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 416W | TO-247AD | 600V | 37 ns | 600V | 96A | 291 ns | 400V, 32A, 4.7 Ω, 15V | 30V | 6V | 2.5V @ 15V, 32A | PT | 158nC | 161A | 17ns/112ns | 534μJ (on), 466μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| STGW80H65DFB-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw80h65dfb4-datasheets-0747.pdf | TO-247-4 | 20 Weeks | 3 | EAR99 | 469W | NOT SPECIFIED | STGW80 | Single | NOT SPECIFIED | 469W | 85 ns | 650V | 2V | 120A | 400V, 80A, 10 Ω, 15V | 2V @ 15V, 80A | Trench Field Stop | 414nC | 240A | 84ns/280ns | 2.1mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGT15N120B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/ixys-ixgh15n120b-datasheets-0461.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | 4.500005g | yes | LOW SWITCHING LOSSES | e3 | Matte Tin (Sn) | 180W | GULL WING | NOT SPECIFIED | IXG*15N120 | 4 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 180W | 1.2kV | 3.2V | 43 ns | 1.2kV | 30A | 1200V | 660 ns | 960V, 15A, 10 Ω, 15V | 20V | 5V | 3.2V @ 15V, 15A | PT | 69nC | 60A | 25ns/180ns | 1.75mJ (off) | 320ns | |||||||||||||||||||||||||||||||||
| APT30GP60BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30gp60bg-datasheets-0750.pdf | 600V | 30A | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 463W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 463W | TO-247AD | 600V | 31 ns | 600V | 100A | 164 ns | 400V, 30A, 5 Ω, 15V | 2.7V @ 15V, 30A | PT | 90nC | 13ns/55ns | 260μJ (on), 250μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IXXH50N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | TO-247-3 | 3 | 28 Weeks | 600W | SINGLE | 3 | 175°C | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 600W | TO-247AD | 600V | 75 ns | 1.8V | 120A | 320 ns | 360V, 36A, 5 Ω, 15V | 20V | 5.5V | 1.8V @ 15V, 36A | PT | 70nC | 200A | 27ns/100ns | 670μJ (on), 740μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IXGT50N90B2D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 4.500005g | 400W | IXG*50N90 | Single | 200 ns | 900V | 2.7V | 2.7V | 75A | 2.7V @ 15V, 50A | PT | 135nC | 20ns/350ns | 4.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGK50N60C2D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixgx50n60c2d1-datasheets-4918.pdf | TO-264-3, TO-264AA | 3 | 8 Weeks | 10.000011g | 3 | yes | 480W | NOT SPECIFIED | IXG*50N60 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 480W | 35 ns | 600V | 2.5V | 43 ns | 600V | 75A | 230 ns | 480V, 40A, 2 Ω, 15V | 2.5V @ 15V, 40A | PT | 138nC | 300A | 18ns/115ns | 380μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| APT40GR120S | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt40gr120s-datasheets-0735.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 19 Weeks | EAR99 | 500W | Insulated Gate BIP Transistors | N-CHANNEL | 500W | 1.2kV | 3.2V | 88A | 1200V | 600V, 40A, 4.3 Ω, 15V | 30V | 6V | 3.2V @ 15V, 40A | NPT | 210nC | 160A | 22ns/163ns | 1.38mJ (on), 906μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH17N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 1997 | /files/ixys-ixgm17n100a-datasheets-9951.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 150W | IXG*17N100 | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | TO-247AD | 1kV | 300 ns | 1kV | 34A | 1000V | 1900 ns | 800V, 17A, 82 Ω, 15V | 20V | 5V | 3.5V @ 15V, 17A | 100nC | 68A | 100ns/500ns | 3mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXGT24N60B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 4.500005g | yes | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | IXG*24N60 | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 600V | 24A | 24A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKFW90N60EH3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ikfw90n60eh3xksa1-datasheets-0710.pdf | TO-247-3 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 178W | 107ns | 600V | 77A | 400V, 75A, 5 Ω, 15V | 2.3V @ 15V, 75A | Trench Field Stop | 440nC | 300A | 32ns/210ns | 2.65mJ (on), 1.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW75N60TAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-ikw75n60tfksa1-datasheets-4378.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | yes | AEC-Q101 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 428W | 121ns | 69 ns | 600V | 80A | 401 ns | 400V, 75A, 5 Ω, 15V | 2V @ 15V, 75A | Trench Field Stop | 470nC | 225A | 33ns/330ns | 4.5mJ | |||||||||||||||||||||||||||||||||||||||||||||
| IXGH24N120C3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh24n120c3h1-datasheets-0715.pdf | TO-247-3 | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | 250W | SINGLE | NOT SPECIFIED | IXG*24N120 | 3 | NOT SPECIFIED | 1 | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | TO-247AD | 70 ns | 1.2kV | 51 ns | 4.2V | 48A | 1200V | 430 ns | 600V, 20A, 5 Ω, 15V | 4.2V @ 15V, 20A | PT | 79nC | 96A | 16ns/93ns | 1.16mJ (on), 470μJ (off) | |||||||||||||||||||||||||||||||||||||||
| STGW80H65FB-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw80h65fb4-datasheets-0463.pdf | TO-247-4 | 37 Weeks | 3 | 469W | STGW80 | Single | 469W | 650V | 2V | 120A | 400V, 80A, 10 Ω, 15V | 2V @ 15V, 80A | Trench Field Stop | 414nC | 240A | 84ns/280ns | 2.1mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYT80N90C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh80n90c3-datasheets-6292.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | unknown | e3 | Matte Tin (Sn) | 830W | SINGLE | GULL WING | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 830W | 900V | 134 ns | 2.7V | 165A | 201 ns | 450V, 80A, 2 Ω, 15V | 20V | 5.5V | 2.7V @ 15V, 80A | 145nC | 360A | 34ns/90ns | 4.3mJ (on), 1.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| FGA50N100BNTD2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fga50n100bntd2-datasheets-0718.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 3 | 8 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 156W | Single | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 156W | 75 ns | 1kV | 1.5V | 102 ns | 1kV | 50A | 1000V | 308 ns | 600V, 60A, 10 Ω, 15V | 25V | 7V | 2.9V @ 15V, 60A | NPT and Trench | 257nC | 200A | 34ns/243ns | 100ns |
