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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| APT68GA60B2D40 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt68ga60b2d40-datasheets-0813.pdf | TO-247-3 Variant | 3 | 25 Weeks | 3 | yes | EAR99 | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 520W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 520W | TO-247AD | 600V | 46 ns | 2.5V | 121A | 304 ns | 400V, 40A, 4.7 Ω, 15V | 2.5V @ 15V, 40A | PT | 198nC | 202A | 21ns/133ns | 715μJ (on), 607μJ (off) | ||||||||||||||||||||||||||||||||||||||
| APT68GA60LD40 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt68ga60b2d40-datasheets-0813.pdf | TO-264-3, TO-264AA | 3 | 25 Weeks | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 520W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 520W | 22 ns | 600V | 46 ns | 600V | 121A | 304 ns | 400V, 40A, 4.7 Ω, 15V | 2.5V @ 15V, 40A | PT | 198nC | 202A | 21ns/133ns | 715μJ (on), 607μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IXGT30N120BD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 4.500005g | IXG*30N120 | TO-268 | 1.2kV | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGK64N60B3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgk64n60b3d1-datasheets-0772.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | yes | LOW CONDUCTION LOSS | unknown | e1 | TIN SILVER COPPER | 460W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 35 ns | 600V | 600V | 64 ns | 600V | 400A | 326 ns | 480V, 50A, 3 Ω, 15V | 20V | 5V | 1.8V @ 15V, 50A | PT | 168nC | 25ns/138ns | 1.5mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||
| IXYA8N250CHV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Surface Mount | -55°C~175°C TJ | Standard | /files/ixys-ixya8n250chv-datasheets-0775.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 280W | 5ns | 2500V | 29A | 1250V, 8A, 15 Ω, 15V | 4V @ 15V, 8A | 45nC | 70A | 11ns/180ns | 2.6mJ (on), 1.07mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXDR30N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixdr30n120-datasheets-0776.pdf | ISOPLUS247™ | Lead Free | 3 | 32 Weeks | No SVHC | 3 | yes | EAR99 | HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NPN | 200W | NOT SPECIFIED | IXD*30N120 | 3 | Single | NOT SPECIFIED | 200W | 1 | Insulated Gate BIP Transistors | Not Qualified | 100 ns | 70ns | 500 ns | SILICON | ISOLATED | POWER CONTROL | 1.2kV | 2.4V | 170 ns | 1.2kV | 50A | 1200V | 570 ns | 600V, 30A, 47 Ω, 15V | 20V | 6.5V | 2.9V @ 15V, 30A | NPT | 120nC | 60A | 4.6mJ (on), 3.4mJ (off) | ||||||||||||||||||||||||||||||
| IXYJ20N120C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyj20n120c3d1-datasheets-0777.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 24 Weeks | 3 | unknown | 105W | IXY*20N120 | Single | 105W | Insulated Gate BIP Transistors | N-CHANNEL | 195 ns | 1.2kV | 4V | 1.2kV | 21A | 1200V | 600V, 20A, 10 Ω, 15V | 20V | 5V | 3.4V @ 15V, 20A | 53nC | 84A | 20ns/90ns | 1.3mJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| APT50GR120L | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt50gr120l-datasheets-0778.pdf | TO-264-3, TO-264AA | Lead Free | 21 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | 694W | Insulated Gate BIP Transistors | N-CHANNEL | 694W | 1.2kV | 3.2V | 117A | 1200V | 600V, 50A, 4.3 Ω, 15V | 30V | 6.5V | 3.2V @ 15V, 50A | NPT | 445nC | 200A | 28ns/237ns | 2.14mJ (on), 1.48mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGT6N170AHV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixgt6n170ahv-datasheets-0779.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | not_compliant | e3 | Matte Tin (Sn) | 75W | 75W | 1.7kV | 7V | 6A | 1700V | 850V, 6A, 33 Ω, 15V | 7V @ 15V, 3A | 18.5nC | 14A | 46ns/220ns | 590μJ (on), 180μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXH75N60C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixxh75n60c3d1-datasheets-0780.pdf | TO-247-3 | 3 | 28 Weeks | 750W | SINGLE | 3 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 750W | TO-247AD | 25 ns | 600V | 105 ns | 2.3V | 150A | 185 ns | 400V, 60A, 5 Ω, 15V | 20V | 5.5V | 2.3V @ 15V, 60A | PT | 107nC | 300A | 35ns/90ns | 1.6mJ (on), 800μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXXH110N65B4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX4™ | Through Hole | -55°C~175°C TJ | Standard | TO-247-3 | 28 Weeks | compliant | 880W | 40ns | 650V | 250A | 400V, 55A, 2 Ω, 15V | 2.1V @ 15V, 110A | PT | 183nC | 570A | 26ns/146ns | 2.2mJ (on), 1.05mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH40N120B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixyh40n120b3-datasheets-0781.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | AVALANCHE RATED | 577W | SINGLE | 3 | 1 | R-PSFM-T3 | 22 ns | 177 ns | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 577W | TO-247AD | 1.2kV | 84 ns | 2.9V | 96A | 1200V | 411 ns | 600V, 40A, 10 Ω, 15V | 2.9V @ 15V, 40A | 87nC | 200A | 22ns/177ns | 2.7mJ (on), 1.6mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| APT25GP90BDQ1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt25gp90bdq1g-datasheets-0782.pdf | 900V | 72A | TO-247-3 | Lead Free | 19 Weeks | 417W | Single | TO-247 [B] | 417W | 900V | 900V | 72A | 900V | 72A | 600V, 40A, 4.3Ohm, 15V | 3.9V @ 15V, 25A | PT | 110nC | 110A | 13ns/55ns | 370μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH20N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/ixys-ixgt20n120-datasheets-3516.pdf | TO-247-3 | 3 | 8 Weeks | 6.500007g | yes | 150W | NOT SPECIFIED | IXG*20N120 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 150W | 1.2kV | 57 ns | 1.2kV | 40A | 1200V | 1250 ns | 800V, 20A, 47 Ω, 15V | 2.5V @ 15V, 20A | PT | 63nC | 80A | 28ns/400ns | 6.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IXGR35N120BD1 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixgr35n120bd1-datasheets-0784.pdf | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 247 | yes | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | NOT SPECIFIED | IXG*35N120 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 250W | 40 ns | 1.2kV | 105 ns | 1.2kV | 54A | 1200V | 780 ns | 960V, 35A, 3 Ω, 15V | 3.5V @ 15V, 35A | 140nC | 200A | 40ns/270ns | 900μJ (on), 3.8mJ (off) | |||||||||||||||||||||||||||||||||||||
| IXXH50N60B3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | Standard | ROHS3 Compliant | TO-247-3 | 3 | 28 Weeks | 600W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 600W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 25 ns | 600V | 1.55V | 75 ns | 1.8V | 120A | 320 ns | 360V, 36A, 5 Ω, 15V | 20V | 5.5V | 1.8V @ 15V, 36A | PT | 70nC | 200A | 27ns/100ns | 670μJ (on), 740μJ (off) | |||||||||||||||||||||||||||||||||||||||
| IXGT15N120CD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgh15n120bd1-datasheets-5393.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | 4.500005g | 3 | no | e0 | Tin/Lead (Sn/Pb) | 150W | GULL WING | NOT SPECIFIED | IXG*15N120 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | 40 ns | 1.2kV | 43 ns | 1.2kV | 30A | 1200V | 520 ns | 960V, 15A, 10 Ω, 15V | 20V | 5V | 3.8V @ 15V, 15A | 69nC | 60A | 25ns/150ns | 1.05mJ (off) | 190ns | |||||||||||||||||||||||||||||||||
| IXYH75N65C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Standard | ROHS3 Compliant | TO-247-3 | 28 Weeks | 750W | 65ns | 650V | 175A | 400V, 60A, 3 Ω, 15V | 2.3V @ 15V, 60A | PT | 122nC | 360A | 26ns/93ns | 2mJ (on), 950μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH30N120C3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/ixys-ixgh30n120c3h1-datasheets-0771.pdf | TO-247-3 | 3 | 8 Weeks | yes | LOW CONDUCTION LOSS | 250W | SINGLE | NOT SPECIFIED | IXG*30N120 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | TO-247AD | 70 ns | 1.2kV | 60 ns | 4.2V | 48A | 1200V | 415 ns | 600V, 24A, 5 Ω, 15V | 20V | 5V | 4.2V @ 15V, 24A | PT | 80nC | 115A | 18ns/106ns | 1.45mJ (on), 470μJ (off) | ||||||||||||||||||||||||||||||||||
| IXYK100N65B3D1 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Tube | Standard | https://pdf.utmel.com/r/datasheets/ixys-ixyk100n65b3d1-datasheets-0787.pdf | TO-264-3, TO-264AA | 28 Weeks | compliant | 830W | 37ns | 650V | 225A | 400V, 50A, 3 Ω, 15V | 1.85V @ 15V, 70A | 168nC | 460A | 29ns/150ns | 1.27mJ (on), 2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH6N170 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/ixys-ixgh6n170a-datasheets-0586.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 28 Weeks | 6.500007g | 3 | yes | 75W | NOT SPECIFIED | IXG*6N170 | 3 | Single | NOT SPECIFIED | 75W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AD | 1.7kV | 3V | 85 ns | 1.7kV | 12A | 1700V | 600 ns | 1360V, 6A, 33 Ω, 15V | 20V | 5V | 4V @ 15V, 6A | NPT | 20nC | 24A | 40ns/250ns | 1.5mJ (off) | ||||||||||||||||||||||||||||||||
| IXYH30N120C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixyh30n120c3d1-datasheets-0755.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 28 Weeks | 3 | 416W | Single | 416W | 1 | Insulated Gate BIP Transistors | 23 ns | 126 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 195ns | 1.2kV | 3.7V | 71 ns | 1.2kV | 66A | 1200V | 296 ns | 600V, 30A, 10 Ω, 15V | 20V | 5V | 3.3V @ 15V, 30A | 69nC | 133A | 19ns/130ns | 2.6mJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||||||||||||
| IXGH56N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | -55°C~150°C TJ | Standard | RoHS Compliant | 2012 | TO-247-3 | 3 | 1 Weeks | yes | LOW CONDUCTION LOSS | compliant | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 330W | 330W | TO-247AD | 41ns | 63 ns | 600V | 130A | 385 ns | 480V, 44A, 5 Ω, 15V | 20V | 5V | 1.8V @ 15V, 44A | PT | 138nC | 350A | 26ns/155ns | 1.3mJ (on), 1.05mJ (off) | 165ns | ||||||||||||||||||||||||||||||||||||
| APT100GN60B2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 600V | 229A | TO-247-3 Variant | Lead Free | 3 | 24 Weeks | 3 | yes | HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | 625W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 96 ns | 600V | 229A | 435 ns | 400V, 100A, 1 Ω, 15V | 6.5V | 1.85V @ 15V, 100A | Trench Field Stop | 600nC | 300A | 31ns/310ns | 4.7mJ (on), 2.675mJ (off) | |||||||||||||||||||||||||||||||||||||||
| IXYT20N120C3D1HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Surface Mount | -55°C~150°C TJ | Tube | 1 | Standard | RoHS Compliant | /files/ixys-ixyt20n120c3d1hv-datasheets-0758.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 230W | 230W | 29ns | 60 ns | 1200V | 36A | 220 ns | 600V, 20A, 10 Ω, 15V | 20V | 5V | 3.4V @ 15V, 20A | 53nC | 88A | 20ns/90ns | 1.3mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IXDH30N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/ixys-ixdt30n120-datasheets-4699.pdf | TO-3P-3 Full Pack | 3 | 32 Weeks | 6.500007g | 3 | yes | LOW SWITCHING LOSSES | not_compliant | 300W | NOT SPECIFIED | IXD*30N120 | 3 | Single | NOT SPECIFIED | 300W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AD | 1.2kV | 2.4V | 170 ns | 1.2kV | 60A | 1200V | 570 ns | 600V, 30A, 47 Ω, 15V | 20V | 6.5V | 2.9V @ 15V, 30A | NPT | 120nC | 76A | 4.6mJ (on), 3.4mJ (off) | |||||||||||||||||||||||||||||||||||
| FID60-06D | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/ixys-fid6006d-datasheets-0760.pdf | i4-Pac™-5 | Lead Free | 5 | 32 Weeks | 5 | yes | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 200W | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 200W | 1 | Insulated Gate BIP Transistors | Not Qualified | 50 ns | 300 ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 70ns | 600V | 1.6V | 110 ns | 600V | 65A | 330 ns | 300V, 30A, 22 Ω, 15V | 20V | 2V @ 15V, 30A | NPT | 120nC | 1mJ (on), 1.4mJ (off) | ||||||||||||||||||||||||||||||||||||
| IXGH16N170A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-ixgh16n170ah1-datasheets-4732.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 190W | NOT SPECIFIED | IXG*16N170 | 3 | Single | NOT SPECIFIED | 190W | 1 | Insulated Gate BIP Transistors | Not Qualified | 1.5nF | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AD | 230 ns | 1.7kV | 4.2V | 97 ns | 1.7kV | 16A | 1700V | 330 ns | 850V, 16A, 10 Ω, 15V | 20V | 5V | 5V @ 15V, 11A | NPT | 65nC | 40A | 36ns/160ns | 900μJ (off) | 150ns | ||||||||||||||||||||||||||||||
| IXGR24N120C3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | ISOPLUS247™ | 8 Weeks | IXG*24N120 | 1.2kV | 48A | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGT16N170 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/ixys-ixgh16n170-datasheets-5612.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 3 | 24 Weeks | 4.500005g | yes | not_compliant | e3 | Matte Tin (Sn) | 190W | THROUGH-HOLE | NOT SPECIFIED | IXG*16N170 | 3 | Single | NOT SPECIFIED | 190W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.7kV | 2.7V | 90 ns | 1.7kV | 32A | 1700V | 1600 ns | 1360V, 16A, 10 Ω, 15V | 20V | 5V | 3.5V @ 15V, 16A | NPT | 78nC | 80A | 45ns/400ns | 9.3mJ (off) | 1100ns |
