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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Turn-Off Delay Time | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| STGW40S120DF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40s120df3-datasheets-0674.pdf | TO-247-3 | 3 | 41 Weeks | No SVHC | EAR99 | 468W | SINGLE | NOT SPECIFIED | STGW40 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 468W | 355 ns | 1.2kV | 50 ns | 2.15V | 80A | 1200V | 158.46 ns | 600V, 40A, 15 Ω, 15V | 2.15V @ 15V, 40A | Trench Field Stop | 129nC | 160A | 35ns/148ns | 1.43mJ (on), 3.83mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IXGH20N160 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 600V | 40A | 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYQ40N65B3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | -55°C~175°C TJ | Standard | TO-3P-3, SC-65-3 | 24 Weeks | compliant | 300W | 37ns | 650V | 86A | 400V, 30A, 10 Ω, 15V | 2V @ 15V, 40A | PT | 68nC | 195A | 20ns/140ns | 800μJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGQ180N33TCD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-3P-3, SC-65-3 | 5.500006g | 330V | 180A | 180A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH28N90B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgh28n90b-datasheets-0650.pdf | TO-247-3 | 3 | 6 Weeks | 6.500007g | 3 | yes | 200W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 200W | TO-247AD | 900V | 65 ns | 900V | 51A | 470 ns | 720V, 28A, 4.7 Ω, 15V | 20V | 5V | 2.7V @ 15V, 28A | 100nC | 120A | 30ns/100ns | 1.2mJ (off) | 220ns | |||||||||||||||||||||||||||||||||||||
| APT15GT120BRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt15gt120brg-datasheets-0651.pdf | 1.2kV | 36A | TO-247-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | ULTRA FAST | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.2kV | 21 ns | 1.2kV | 36A | 1200V | 137 ns | 800V, 15A, 5 Ω, 15V | 30V | 6.5V | 3.6V @ 15V, 15A | NPT | 105nC | 45A | 10ns/85ns | 585μJ (on), 260μJ (off) | |||||||||||||||||||||||||||||||||
| IXGH15N120CD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgh15n120bd1-datasheets-5393.pdf | TO-247-3 | 3 | 8 Weeks | 6.500007g | 3 | no | e0 | Tin/Lead (Sn/Pb) | 150W | NOT SPECIFIED | IXG*15N120 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | TO-247AD | 40 ns | 1.2kV | 43 ns | 1.2kV | 30A | 1200V | 520 ns | 960V, 15A, 10 Ω, 15V | 20V | 5V | 3.8V @ 15V, 15A | 69nC | 60A | 25ns/150ns | 1.05mJ (off) | 190ns | |||||||||||||||||||||||||||||||||
| APT70GR65B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt70gr65b-datasheets-0653.pdf | TO-247-3 | Lead Free | 22 Weeks | EAR99 | 595W | 595W | 650V | 2.4V | 134A | 433V, 70A, 4.3 Ω, 15V | 2.4V @ 15V, 70A | NPT | 305nC | 260A | 19ns/170ns | 1.51mJ (on), 1.46mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGA20N120B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/ixys-ixgp20n120-datasheets-0483.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | 1.59999g | yes | LOW CONDUCTION LOSS | unknown | e3 | PURE TIN | 150W | SINGLE | GULL WING | NOT SPECIFIED | IXG*20N120 | 4 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | TO-263AA | 1.2kV | 61 ns | 2.5V | 40A | 1200V | 720 ns | 20V | 5V | 2.5V @ 15V, 20A | 63nC | 28ns/400ns | 6.5mJ (off) | |||||||||||||||||||||||||||||||||
| APT44GA60BD30 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt44ga60bd30-datasheets-0655.pdf | TO-247-3 | 3 | 29 Weeks | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 337W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 337W | 600V | 29 ns | 600V | 78A | 208 ns | 400V, 26A, 4.7 Ω, 15V | 30V | 6V | 2.5V @ 15V, 26A | PT | 128nC | 130A | 16ns/84ns | 409μJ (on), 258μJ (off) | ||||||||||||||||||||||||||||||||||||||
| APT54GA60BD30 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt54ga60bd30-datasheets-0656.pdf | TO-247-3 | 3 | 33 Weeks | yes | EAR99 | LOW CONDUCTION LOSS | No | Pure Matte Tin (Sn) | 416W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 416W | TO-247AD | 600V | 37 ns | 600V | 96A | 291 ns | 400V, 32A, 4.7 Ω, 15V | 30V | 6V | 2.5V @ 15V, 32A | PT | 28nC | 161A | 17ns/112ns | 534μJ (on), 466μJ (off) | ||||||||||||||||||||||||||||||||||||||
| IXDH30N120D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/ixys-ixdt30n120-datasheets-4699.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 20 Weeks | 6.500007g | 3 | yes | EAR99 | LOW SWITCHING LOSSES | 300W | NOT SPECIFIED | IXD*30N120 | 3 | Single | NOT SPECIFIED | 300W | 1 | Insulated Gate BIP Transistors | Not Qualified | 100 ns | 500 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AD | 40ns | 1.2kV | 2.4V | 170 ns | 1.2kV | 60A | 1200V | 570 ns | 600V, 30A, 47 Ω, 15V | 20V | 6.5V | 2.9V @ 15V, 30A | NPT | 120nC | 76A | 4.6mJ (on), 3.4mJ (off) | ||||||||||||||||||||||||||||||
| FGH40T120SMDL4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | TO-247-4 | 6 Weeks | 6.289g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 555W | NOT SPECIFIED | Single | NOT SPECIFIED | 555W | 65 ns | 1.2kV | 2.4V | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 2.4V @ 15V, 40A | Trench Field Stop | 370nC | 160A | 44ns/464ns | 2.24mJ (on), 1.02mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| IRG8CH76K10F | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/infineontechnologies-irg8ch76k10f-datasheets-0666.pdf | Die | 16 Weeks | EAR99 | YES | UNSPECIFIED | UNSPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 100 ns | 1200V | 75A | 555 ns | 2 V | 600V, 75A, 1.5 Ω, 15V | 30V | 6.5V | 2V @ 15V, 75A | 480nC | 80ns/210ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GS60BRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gs60brg-datasheets-0667.pdf | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 24 Weeks | 38.000013g | no | No | 415W | Single | 93A | 600V | 2.8V | 600V | 93A | 400V, 50A, 4.7 Ω, 15V | 3.15V @ 15V, 50A | NPT | 235nC | 195A | 16ns/225ns | 755μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXGQ200N30PB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | TO-3P-3, SC-65-3 | 5.500006g | 300V | 400A | 400A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75GN60BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/microsemicorporation-apt75gn60bg-datasheets-0619.pdf | 600V | 155A | TO-247-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 536W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 47 ns | 385 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 95 ns | 600V | 155A | 485 ns | 400V, 75A, 1 Ω, 15V | 30V | 6.5V | 1.85V @ 15V, 75A | Trench Field Stop | 485nC | 225A | 47ns/385ns | 2500μJ (on), 2140μJ (off) | ||||||||||||||||||||||||||||||||||
| APT30GT60BRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gt60brg-datasheets-0621.pdf | 600V | 64A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 64A | TO-247AD | 600V | 2V | 32 ns | 600V | 64A | 345 ns | 400V, 30A, 10 Ω, 15V | 30V | 5V | 2.5V @ 15V, 30A | NPT | 145nC | 110A | 12ns/225ns | 525μJ (on), 600μJ (off) | |||||||||||||||||||||||||||||
| IXGH72N60C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh72n60c3-datasheets-0623.pdf | TO-247-3 | Lead Free | 3 | 20 Weeks | yes | 540W | SINGLE | NOT SPECIFIED | IXG*72N60 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 540W | TO-247AD | 600V | 62 ns | 2.5V | 75A | 244 ns | 480V, 50A, 2 Ω, 15V | 20V | 5V | 2.5V @ 15V, 50A | PT | 174nC | 360A | 27ns/77ns | 1.03mJ (on), 480μJ (off) | |||||||||||||||||||||||||||||||||||
| IXA55I1200HJ | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixa55i1200hj-datasheets-0625.pdf | ISOPLUS247™ | 16.13mm | 21.34mm | 5.21mm | 3 | 28 Weeks | No SVHC | 3 | yes | EAR99 | e1 | TIN SILVER COPPER | 290W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 290W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 2.1V | 110 ns | 1.2kV | 84A | 1200V | 350 ns | 600V, 50A, 15 Ω, 15V | 20V | 6.5V | 2.1V @ 15V, 50A | PT | 190nC | 4.5mJ (on), 5.5mJ (off) | |||||||||||||||||||||||||||||||||
| STGWT80H65DFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt80h65dfb-datasheets-0626.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 32 Weeks | 6.756003g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 469W | STGWT80 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 469W | 85 ns | 650V | 1.6V | 650V | 120A | 400V, 80A, 10 Ω, 15V | 20V | 2V @ 15V, 80A | Trench Field Stop | 414nC | 240A | 84ns/280ns | 2.1mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IXGT20N120BD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/ixys-ixgt20n120bd1-datasheets-0631.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | 4.500005g | yes | e3 | Matte Tin (Sn) | 190W | GULL WING | NOT SPECIFIED | IXG*20N120 | 4 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | 40 ns | 1.2kV | 43 ns | 1.2kV | 40A | 1200V | 630 ns | 960V, 20A, 10 Ω, 15V | 3.4V @ 15V, 20A | 72nC | 100A | 25ns/150ns | 2.1mJ (off) | |||||||||||||||||||||||||||||||||||||
| IGW100N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw100n60h3fksa1-datasheets-0632.pdf | TO-247-3 | Lead Free | 16 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Not Halogen Free | 714W | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 714W | 600V | 600V | 140A | 400V, 100A, 3.5 Ω, 15V | 20V | 5.7V | 2.3V @ 15V, 100A | Trench Field Stop | 625nC | 300A | 30ns/265ns | 3.7mJ (on), 1.9mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IXYH30N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyp30n120c3-datasheets-0575.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 28 Weeks | 3 | No | 500W | Single | 500W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | TO-247AD | 1.2kV | 3.7V | 71 ns | 1.2kV | 75A | 1200V | 296 ns | 600V, 30A, 10 Ω, 15V | 20V | 5V | 3.3V @ 15V, 30A | 69nC | 145A | 19ns/130ns | 2.6mJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||||||||||||
| FGY100T65SCDT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Standard | RoHS Compliant | 2016 | /files/onsemiconductor-fgy100t65scdt-datasheets-0636.pdf | TO-247-3 | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 750W | 62ns | 650V | 200A | 400V, 100A, 4.7 Ω, 15V | 1.9V @ 15V, 100A | Trench Field Stop | 157nC | 300A | 84ns/216ns | 5.4mJ (on), 3.8mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC36T120T8LX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/infineontechnologies-igc36t120t8lx1sa1-datasheets-0639.pdf | Die | Lead Free | 3 | 12 Weeks | EAR99 | Halogen Free | YES | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XUUC-N3 | 1.2kV | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 1.2kV | 1.2kV | 1200V | 2.07V @ 15V, 35A | Trench Field Stop | 105A | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH28N60B3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/ixys-ixgh28n60b3d1-datasheets-0642.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 190W | SINGLE | NOT SPECIFIED | IXG*28N60 | 3 | NOT SPECIFIED | 1 | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 190W | TO-247AD | 25 ns | 600V | 45 ns | 1.8V | 66A | 350 ns | 400V, 24A, 10 Ω, 15V | 1.8V @ 15V, 24A | PT | 62nC | 150A | 19ns/125ns | 340μJ (on), 650μJ (off) | |||||||||||||||||||||||||||||||||||
| IXYH20N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixya20n120c3hv-datasheets-0519.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 28 Weeks | 3 | EAR99 | AVALANCHE RATED | not_compliant | 8541.90.00.00 | 278W | NOT SPECIFIED | IXY*20N120 | Single | NOT SPECIFIED | 278W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.2kV | 4V | 60 ns | 1.2kV | 40A | 1200V | 220 ns | 600V, 20A, 10 Ω, 15V | 20V | 5V | 3.4V @ 15V, 20A | 53nC | 96A | 20ns/90ns | 1.3mJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||
| IXGT10N170A | IXYS | $8.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixgh10n170a-datasheets-0529.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 4.500005g | yes | No | e3 | Matte Tin (Sn) | 140W | GULL WING | IXG*10N170 | 4 | Single | 140W | 1 | R-PSSO-G2 | 46 ns | 190 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 1.7kV | 4.5V | 107 ns | 1.7kV | 10A | 1700V | 240 ns | 850V, 10A, 22 Ω, 15V | 6V @ 15V, 5A | NPT | 29nC | 20A | 46ns/190ns | 380μJ (off) | ||||||||||||||||||||||||||||||||||
| IXXH50N60C3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixxh50n60c3-datasheets-0645.pdf | TO-247-3 | 3 | 28 Weeks | 6.500007g | 600W | SINGLE | IXX*N60 | 3 | 600W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 2.3V | 69 ns | 2.3V | 100A | 170 ns | 360V, 36A, 5 Ω, 15V | 20V | 5.5V | 2.3V @ 15V, 36A | PT | 64nC | 200A | 24ns/62ns | 720μJ (on), 330μJ (off) |
