Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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IXGT72N60A3-TRL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | -55°C~150°C TJ | Standard | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 540W | 34ns | 600V | 75A | 480V, 50A, 3 Ω, 15V | 1.35V @ 15V, 60A | PT | 230nC | 400A | 31ns/320ns | 1.38mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGA15N100C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Lightspeed™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/ixys-ixgp15n100c-datasheets-0456.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 6 Weeks | 1.59999g | 3 | yes | not_compliant | e3 | Matte Tin (Sn) | 150W | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | 1kV | 43 ns | 1kV | 30A | 1000V | 430 ns | 960V, 15A, 10 Ω, 15V | 3.5V @ 15V, 15A | 73nC | 60A | 25ns/150ns | 850μJ (off) | ||||||||||||||||||||||||||||||||
RJH60D5BDPQ-E0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/renesaselectronicsamerica-rjh60d5bdpqe0t2-datasheets-0602.pdf | TO-247-3 | 16 Weeks | 3 | EAR99 | 200W | NOT SPECIFIED | RJH60D | 3 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 200W | 25 ns | 600V | 2.2V | 75A | 300V, 37A, 5 Ω, 15V | 6V | 2.2V @ 15V, 37A | Trench | 78nC | 50ns/130ns | 400μJ (on), 810μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
IXDH35N60B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixdh35n60b-datasheets-0605.pdf | TO-3P-3 Full Pack | 3 | 32 Weeks | 6.500007g | 3 | yes | HIGH SPEED | 250W | NOT SPECIFIED | IXD*35N60 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 250W | TO-247AD | 600V | 2.1V | 75 ns | 600V | 60A | 390 ns | 300V, 35A, 10 Ω, 15V | 20V | 5V | 2.7V @ 15V, 35A | NPT | 120nC | 70A | 1.6mJ (on), 800μJ (off) | ||||||||||||||||||||||||||||||||
APT15GP90BDQ1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt15gp90bdq1g-datasheets-0606.pdf | 900V | 43A | TO-247-3 | Lead Free | 3 | yes | LOW CONDUCTION LOSS | e1 | TIN SILVER COPPER | 250W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 900V | 23 ns | 900V | 43A | 170 ns | 600V, 15A, 4.3 Ω, 15V | 3.9V @ 15V, 15A | PT | 60nC | 60A | 9ns/33ns | 200μJ (off) | |||||||||||||||||||||||||||||||||
IRG7CH54K10EF-R | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Bulk | Not Applicable | Standard | ROHS3 Compliant | 2012 | Die | 16 Weeks | 1200V | 600V, 50A, 5 Ω, 15V | 1.5V @ 15V, 10A | 290nC | 75ns/305ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKFW75N60ETXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/infineontechnologies-ikfw75n60etxksa1-datasheets-0611.pdf | TO-247-3 | 16 Weeks | 178W | 107ns | 600V | 80A | 400V, 75A, 5 Ω, 15V | 2V @ 15V, 75A | Trench Field Stop | 440nC | 225A | 33ns/340ns | 2.7mJ (on), 2.35J (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGH56N60B3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixgh56n60b3d1-datasheets-0612.pdf | TO-247-3 | 3 | 30 Weeks | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 330W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 100ns | 600V | 63 ns | 1.8V | 385 ns | 480V, 44A, 5 Ω, 15V | 20V | 5V | 1.8V @ 15V, 44A | PT | 138nC | 350A | 26ns/155ns | 1.3mJ (on), 1.05mJ (off) | 165ns | |||||||||||||||||||||||||||||||
IXXP50N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Tube | Standard | RoHS Compliant | /files/ixys-ixxa50n60b3-datasheets-0596.pdf | TO-220-3 | 3 | 24 Weeks | compliant | NO | SINGLE | 3 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 600W | 600W | TO-220AB | 40ns | 75 ns | 600V | 120A | 320 ns | 360V, 36A, 5 Ω, 15V | 20V | 5.5V | 1.8V @ 15V, 36A | 70nC | 200A | 27ns/150ns | 670μJ (on), 1.2mJ (off) | ||||||||||||||||||||||||||||||||||||||
STGW40M120DF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa40m120df3-datasheets-1063.pdf | TO-247-3 | Lead Free | 30 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 468W | NOT SPECIFIED | STGW40 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 468W | 355 ns | 1.2kV | 1.85V | 1.2kV | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 20V | 7V | 2.3V @ 15V, 40A | Trench Field Stop | 125nC | 160A | 35ns/140ns | 1.5mJ (on), 2.25mJ (off) | ||||||||||||||||||||||||||||||||||||||
IXGR48N60B3D1 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgr48n60b3d1-datasheets-0614.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | 150W | NOT SPECIFIED | IXG*48N60 | 3 | Single | NOT SPECIFIED | 150W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 100 ns | 600V | 1.77V | 44 ns | 600V | 60A | 347 ns | 480V, 30A, 5 Ω, 15V | 20V | 5.5V | 2.1V @ 15V, 40A | PT | 115nC | 280A | 22ns/130ns | 840μJ (on), 660μJ (off) | 200ns | |||||||||||||||||||||||||||
APT15GN120BDQ1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt15gn120bdq1g-datasheets-0594.pdf | 1.2kV | 45A | TO-247-3 | Lead Free | 3 | 29 Weeks | yes | No | e1 | TIN SILVER COPPER | 195W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 19 ns | 1.2kV | 45A | 1200V | 355 ns | 800V, 15A, 4.3 Ω, 15V | 30V | 6.5V | 2.1V @ 15V, 15A | Trench Field Stop | 90nC | 10ns/150ns | 410μJ (on), 950μJ (off) | ||||||||||||||||||||||||||||||||||
IXYH50N65C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Tube | Standard | RoHS Compliant | 2007 | /files/ixys-ixyh50n65c3d1-datasheets-0616.pdf | TO-247-3 | 28 Weeks | No SVHC | 3 | EAR99 | 600W | NOT SPECIFIED | NOT SPECIFIED | 36ns | 650V | 2.1V | 132A | 400V, 36A, 5 Ω, 15V | 2.1V @ 15V, 36A | 86nC | 250A | 20ns/90ns | 800μJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
IXXA50N60B3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Surface Mount | Surface Mount | -55°C~175°C TJ | 2 | Standard | RoHS Compliant | /files/ixys-ixxa50n60b3-datasheets-0596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | 3 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600W | 600W | 40ns | 75 ns | 600V | 120A | 320 ns | 360V, 36A, 5 Ω, 15V | 20V | 5.5V | 1.8V @ 15V, 36A | 70nC | 200A | 27ns/150ns | 670μJ (on), 1.2mJ (off) | |||||||||||||||||||||||||||||||||||||
IXGH36N60B3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh36n60b3d1-datasheets-0618.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | NOT SPECIFIED | IXG*36N60 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 25ns | 600V | 45 ns | 1.8V | 350 ns | 400V, 30A, 5 Ω, 15V | 20V | 5V | 1.8V @ 15V, 30A | PT | 80nC | 200A | 19ns/125ns | 540μJ (on), 800μJ (off) | 160ns | |||||||||||||||||||||||||||||
IXGQ150N30TCD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-3P-3, SC-65-3 | 5.500006g | 300V | 150A | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGC27T120T8QX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/infineontechnologies-igc27t120t8qx1sa1-datasheets-0597.pdf | Die | Lead Free | 12 Weeks | yes | EAR99 | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 1.2kV | 1.2kV | 1.2kV | 1200V | 2.42V @ 15V, 25A | Trench Field Stop | 75A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXH150N60C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixxh150n60c3-datasheets-0600.pdf | TO-247-3 | 28 Weeks | 1.36kW | 1360W | 600V | 2.5V | 300A | 400V, 75A, 2 Ω, 15V | 2.5V @ 15V, 150A | PT | 200nC | 150A | 34ns/120ns | 3.4mJ (on), 1.8mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYH30N65B3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | -55°C~175°C TJ | Standard | TO-247-3 | 28 Weeks | compliant | 270W | 38ns | 650V | 70A | 400V, 30A, 10 Ω, 15V | 2.1V @ 15V, 30A | PT | 45nC | 160A | 17ns/87ns | 830μJ (on), 640μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGT32N90B2D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/ixys-ixgh32n90b2d1-datasheets-0484.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | 4.500005g | yes | not_compliant | e3 | Matte Tin (Sn) | 300W | GULL WING | NOT SPECIFIED | IXG*32N90 | 4 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300W | 190 ns | 900V | 42 ns | 900V | 64A | 690 ns | 720V, 32A, 5 Ω, 15V | 2.7V @ 15V, 32A | 89nC | 200A | 20ns/260ns | 2.2mJ (off) | ||||||||||||||||||||||||||||||||
IXYA30N120A4HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Surface Mount | -55°C~175°C TJ | Standard | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 500W | 42ns | 1200V | 106A | 960V, 25A, 5 Ω, 15V | 1.9V @ 15V, 25A | PT | 57nC | 184A | 15ns/235ns | 4mJ (on), 3.4mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGH32N100A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh32n100a3-datasheets-0583.pdf | TO-247-3 | 3 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | GENERAL PURPOSE SWITCHING | N-CHANNEL | 300W | TO-247AD | 1kV | 75 ns | 2.2V | 75A | 1000V | 1170 ns | 800V, 32A, 10 Ω, 15V | 2.2V @ 15V, 32A | PT | 87nC | 200A | 24ns/385ns | 2.6mJ (on), 9.5mJ (off) | |||||||||||||||||||||||||||||||||
IXGH48N60A3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh48n60a3d1-datasheets-0584.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 300W | SINGLE | NOT SPECIFIED | IXG*48N60 | 3 | NOT SPECIFIED | 300W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 25ns | 600V | 1.18V | 54 ns | 1.35V | 300A | 925 ns | 480V, 32A, 5 Ω, 15V | 20V | 5V | 1.35V @ 15V, 32A | PT | 110nC | 25ns/334ns | 950μJ (on), 2.9mJ (off) | ||||||||||||||||||||||||||
IXGR35N120D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | ISOPLUS247™ | IXG*35N120 | 1.2kV | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYH40N65C3H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyp10n65c3d1-datasheets-2205.pdf | TO-247-3 | 14 Weeks | 38.000013g | No SVHC | 3 | EAR99 | 300W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 120 ns | 650V | 1.85V | 2.2V | 80A | 400V, 30A, 10 Ω, 15V | 20V | 6.5V | 2.2V @ 15V, 40A | PT | 70nC | 180A | 26ns/106ns | 860μJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
IXGH20N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgh20n100-datasheets-0587.pdf | TO-247-3 | 3 | 6.500007g | 3 | yes | 150W | NOT SPECIFIED | IXG*20N100 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 150W | TO-247AD | 1kV | 30 ns | 1kV | 40A | 200ns | 1000V | 700 ns | 800V, 20A, 47 Ω, 15V | 5V | 3V @ 15V, 20A | PT | 73nC | 80A | 30ns/350ns | 3.5mJ (off) | 2000ns | ||||||||||||||||||||||||||||||||
RJH60D7ADPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/renesaselectronicsamerica-rjh60d7adpk00t0-datasheets-0588.pdf | TO-3P-3, SC-65-3 | Lead Free | 16 Weeks | 3 | yes | 300W | NOT SPECIFIED | RJH60D | 4 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 300W | 100 ns | 600V | 2.2V | 90A | 300V, 50A, 5 Ω, 15V | 6V | 2.2V @ 15V, 50A | Trench | 130nC | 60ns/190ns | 1.1mJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
IXGH50N90B2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFAST™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixgh50n90b2-datasheets-0569.pdf | TO-247-3 | 3 | 30 Weeks | 6.500007g | 3 | yes | 400W | NOT SPECIFIED | IXG*50N90 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 400W | TO-247AD | 900V | 48 ns | 900V | 75A | 820 ns | 720V, 50A, 5 Ω, 15V | 2.7V @ 15V, 50A | PT | 135nC | 200A | 20ns/350ns | 4.7mJ (off) | |||||||||||||||||||||||||||||||||||
APT13GP120BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt13gp120bg-datasheets-0590.pdf | 1.2kV | 41A | TO-247-3 | Lead Free | 3 | 23 Weeks | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 1.2kV | 21 ns | 1.2kV | 41A | 1200V | 270 ns | 600V, 13A, 5 Ω, 15V | 3.9V @ 15V, 13A | PT | 55nC | 50A | 9ns/28ns | 115μJ (on), 165μJ (off) | ||||||||||||||||||||||||||||||||
RJH1CV6DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-rjh1cv6dpk00t0-datasheets-0570.pdf | TO-3P-3, SC-65-3 | 16 Weeks | 3 | yes | EAR99 | 290W | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 290W | 180 ns | 1.2kV | 2.6V | 60A | 1200V | 600V, 30A, 5 Ω, 15V | 2.6V @ 15V, 30A | Trench | 105nC | 46ns/125ns | 2.3mJ (on), 1.7mJ (off) |
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