Products
Manufacturer
RFQ
NEWS
ContactSingle IGBTs(3888)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Continuous Collector Current | Number of Outputs | Power - Max | Clamping Voltage | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRGSL4B60KD1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2004 | /files/infineon-irgsl4b60kd1pbf-datasheets-8436.pdf | 600V | 11A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | Lead Free | 3 | 16 Weeks | 3 | EAR99 | ULTRA FAST SOFT RECOVERY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 63W | 260 | Single | 30 | 63W | 1 | Insulated Gate BIP Transistors | 18ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 93 ns | 600V | 2.5V | 40 ns | 2.5V | 11A | 199 ns | 400V, 4A, 100 Ω, 15V | 20V | 5.5V | 2.5V @ 15V, 4A | NPT | 12nC | 22A | 22ns/100ns | 73μJ (on), 47μJ (off) | 89ns | ||||||||||||||||||||||||||||||||||||
| HGTG30N60A4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-hgtg30n60a4-datasheets-8446.pdf | 600V | 75A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 4 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 463W | HGTG30N60 | Single | 463W | 1 | Insulated Gate BIP Transistors | 25 ns | 12ns | 150 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 75A | 600V | 1.8V | 35 ns | 600V | 75A | 238 ns | 390V, 30A, 3 Ω, 15V | 20V | 7V | 2.6V @ 15V, 30A | 225nC | 240A | 25ns/150ns | 280μJ (on), 240μJ (off) | 70ns | |||||||||||||||||||||||||||||||
| IKW40N120CS6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/infineontechnologies-ikw40n120cs6xksa1-datasheets-4819.pdf | TO-247-3 | 26 Weeks | 500W | 400ns | 1200V | 80A | 600V, 40A, 9 Ω, 15V | 2.15V @ 15V, 40A | Trench Field Stop | 285nC | 160A | 27ns/315ns | 2.55mJ (on), 1.55mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GT60BRDQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gt60brdq2g-datasheets-4823.pdf | 600V | 110A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 25 Weeks | 38.000013g | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 446W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 110A | 22 ns | 600V | 2V | 46 ns | 600V | 110A | 365 ns | 400V, 50A, 5 Ω, 15V | 30V | 5V | 2.5V @ 15V, 50A | NPT | 240nC | 150A | 14ns/240ns | 995μJ (on), 1070μJ (off) | |||||||||||||||||||||||||||||||||||||
| SGF40N60UFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | /files/onsemiconductor-sgf40n60uftu-datasheets-4759.pdf | TO-3P-3 Full Pack | SG*40N60 | TO-3PF | 100W | 600V | 40A | 300V, 20A, 10Ohm, 15V | 2.6V @ 15V, 20A | 97nC | 160A | 15ns/65ns | 160μJ (on), 200μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGL40N120ANDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/onsemiconductor-fgl40n120andtu-datasheets-4671.pdf | 1.2kV | 64A | TO-264-3, TO-264AA | 20mm | 29mm | 5mm | Lead Free | 3 | 4 Weeks | 6.756g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | 8541.29.00.95 | e3 | 500W | Single | 500W | 1 | 150°C | 15 ns | 20ns | 110 ns | SILICON | POWER CONTROL | N-CHANNEL | 64A | 112 ns | 1.2kV | 3.15V | 45 ns | 1.2kV | 64A | 1200V | 165 ns | 600V, 40A, 5 Ω, 15V | 3.2V @ 15V, 40A | NPT | 220nC | 160A | 15ns/110ns | 2.3mJ (on), 1.1mJ (off) | |||||||||||||||||||||||||||||||||||
| RJH60F7DPQ-A0#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjh60f7dpqa0t0-datasheets-4679.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | 328.9W | SINGLE | NOT SPECIFIED | RJH60F | 3 | NOT SPECIFIED | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 328.9W | 90 ns | 600V | 1.6V | 144 ns | 1.75V | 90A | 216 ns | 400V, 30A, 5 Ω, 15V | 1.75V @ 15V, 50A | Trench | 63ns/142ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4PC40KDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4pc40kde206p-datasheets-5034.pdf | 600V | 42A | TO-247-3 | 15.875mm | 20.2946mm | 5.3mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | No | 160W | Single | 160W | 1 | Insulated Gate BIP Transistors | 53 ns | 37ns | 110 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 42 ns | 600V | 2.1V | 89 ns | 2.6V | 42A | 360 ns | 480V, 25A, 10 Ω, 15V | 20V | 6V | 2.6V @ 15V, 25A | 120nC | 84A | 53ns/110ns | 950μJ (on), 760μJ (off) | 150ns | ||||||||||||||||||||||||||||||||||||||
| FGL60N100BNTD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/onsemiconductor-fgl60n100bntdtu-datasheets-2044.pdf | 1kV | 60A | TO-264-3, TO-264AA | 20mm | 26mm | 5mm | Lead Free | 3 | 4 Weeks | 6.756g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | MATTE TIN | NPN | 180W | Single | 180W | 1 | 320ns | SILICON | POWER CONTROL | 1kV | 1.2 μs | 600V | 1.5V | 460 ns | 1kV | 60A | 1000V | 760 ns | 600V, 60A, 51 Ω, 15V | 2.9V @ 15V, 60A | NPT and Trench | 275nC | 120A | 140ns/630ns | ||||||||||||||||||||||||||||||||||||||
| APT25GT120BRG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt25gt120brg-datasheets-4695.pdf | 1.2kV | 54A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 347W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 54A | TO-247AA | 1.2kV | 3.2V | 41 ns | 1.2kV | 54A | 1200V | 220 ns | 800V, 25A, 5 Ω, 15V | 3.7V @ 15V, 25A | NPT | 170nC | 75A | 14ns/150ns | 930μJ (on), 720μJ (off) | |||||||||||||||||||||||||||||||||||||||
| FGH40N60SMD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgh40n60smd-datasheets-4698.pdf | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | Lead Free | 3 | 5 Weeks | 6.39g | No SVHC | 3 | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 349W | FGH40N60 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 349W | TO-247AB | 36 ns | 600V | 2.1V | 37 ns | 600V | 80A | 28ns | 132 ns | 400V, 40A, 6 Ω, 15V | 20V | 6V | 2.5V @ 15V, 40A | Field Stop | 119nC | 120A | 12ns/92ns | 870μJ (on), 260μJ (off) | 17ns | ||||||||||||||||||||||||||||||||||
| NGTB25N120FL3WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-ngtb25n120fl3wg-datasheets-4705.pdf | TO-247-3 | Lead Free | 7 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 349W | 349W | 114 ns | 1.2kV | 1.7V | 2.4V | 100A | 1200V | 600V, 25A, 10 Ω, 15V | 2.4V @ 15V, 25A | Trench Field Stop | 136nC | 15ns/109ns | 1mJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW39NC60VD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw39nc60vd-datasheets-4711.pdf | 600V | 40A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | 250W | STGW39 | 3 | Single | 250W | 1 | Insulated Gate BIP Transistors | 33 ns | 13ns | 178 ns | 40A | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | TO-247AC | 45ns | 600V | 1.8V | 46 ns | 600V | 80A | 366 ns | 390V, 30A, 10 Ω, 15V | 20V | 5.75V | 2.4V @ 15V, 30A | 126nC | 220A | 33ns/178ns | 333μJ (on), 537μJ (off) | ||||||||||||||||||||||||||||||||
| FGH75T65SHDT-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-fgh75t65shdtf155-datasheets-4715.pdf | TO-247-3 | 7 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | 455W | NOT SPECIFIED | Single | NOT SPECIFIED | 455W | 76 ns | 650V | 2.1V | 150A | 400V, 75A, 3 Ω, 15V | 2.1V @ 15V, 75A | Trench Field Stop | 123nC | 225A | 28ns/86ns | 3mJ (on), 750μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW25N120H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikw25n120h3fksa1-datasheets-4722.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 326W | 290ns | 61 ns | 1200V | 50A | 397 ns | 600V, 25A, 23 Ω, 15V | 2.4V @ 15V, 25A | Trench Field Stop | 115nC | 100A | 27ns/277ns | 2.65mJ | ||||||||||||||||||||||||||||||||||||||||||||||||
| HGTG30N60A4D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-hgtg30n60a4d-datasheets-4726.pdf | 600V | 30A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 5 Weeks | 6.39g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | Tin | No | 8541.29.00.95 | e3 | 463W | HGTG30N60 | Single | 463W | 1 | 25 ns | 12s | 150 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 55ns | 600V | 1.8V | 35 ns | 600V | 75A | 238 ns | 390V, 30A, 3 Ω, 15V | 2.6V @ 15V, 30A | 225nC | 240A | 25ns/150ns | 280μJ (on), 240μJ (off) | |||||||||||||||||||||||||||||||||||
| IRGP4063DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-irgp4063depbf-datasheets-9473.pdf | 300V | 96A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 3 | 26 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 330W | IRGP4063D | Single | 330W | 1 | Insulated Gate BIP Transistors | 60 ns | 56ns | 145 ns | 96A | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 300V | TO-247AC | 115 ns | 600V | 2.14V | 100 ns | 2.14V | 96A | 210 ns | 400V, 48A, 10 Ω, 15V | 20V | 6.5V | 2.14V @ 15V, 48A | Trench | 95nC | 144A | 60ns/145ns | 625μJ (on), 1.28mJ (off) | 46ns | |||||||||||||||||||||||||||||||||
| FGA60N65SMD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/onsemiconductor-fga60n65smd-datasheets-4743.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 7 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 600W | Single | 1 | Insulated Gate BIP Transistors | 18 ns | 104 ns | SILICON | POWER CONTROL | N-CHANNEL | 600W | 47 ns | 650V | 1.9V | 650V | 120A | 70ns | 400V, 60A, 3 Ω, 15V | 20V | 6V | 2.5V @ 15V, 60A | Field Stop | 189nC | 180A | 18ns/104ns | 1.54mJ (on), 450μJ (off) | 68ns | |||||||||||||||||||||||||||||||||||||
| IGW60T120FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw60t120fksa1-datasheets-4751.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 375W | TO-247AD | 95 ns | 1200V | 100A | 730 ns | 600V, 60A, 10 Ω, 15V | 2.4V @ 15V, 60A | Trench Field Stop | 280nC | 150A | 50ns/480ns | 9.5mJ | ||||||||||||||||||||||||||||||||||||||||||||||||
| IKW50N65ES5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/infineontechnologies-ikw50n65es5xksa1-datasheets-4754.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | 3 | yes | Halogen Free | 274W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 274W | 70 ns | 650V | 45 ns | 650V | 80A | 198 ns | 400V, 50A, 8.2 Ω, 15V | 1.7V @ 15V, 50A | Trench | 120nC | 200A | 20ns/127ns | 1.23mJ (on), 550μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXBH12N300 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixbh12n300-datasheets-4590.pdf | TO-247-3 | 3 | 24 Weeks | 3 | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 160W | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 160W | 1.4 μs | 3kV | 460 ns | 3.2V | 30A | 3000V | 705 ns | 20V | 5V | 3.2V @ 15V, 12A | 62nC | 100A | |||||||||||||||||||||||||||||||||||||||||||||
| IHW30N160R5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/infineontechnologies-ihw30n160r5xksa1-datasheets-4592.pdf | TO-247-3 | 16 Weeks | 263W | 1600V | 60A | 600V, 30A, 10 Ω, 15V | 2.15V @ 15V, 30A | Trench Field Stop | 205nC | 90A | -/290ns | 2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW60H65DFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw60h65dfb-datasheets-4596.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 20 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 375W | NOT SPECIFIED | STGW60 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 375W | 60 ns | 650V | 1.6V | 650V | 80A | 400V, 60A, 5 Ω, 15V | 20V | 2V @ 15V, 60A | Trench Field Stop | 306nC | 240A | 51ns/160ns | 1.09mJ (on), 626μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| ISL9V5036P3-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, EcoSPARK® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Logic | ROHS3 Compliant | 2017 | /files/onsemiconductor-isl9v5036p3f085-datasheets-4600.pdf | TO-220-3 | 360V | 3 | 4 Weeks | 1.8g | No SVHC | 3 | yes | No | e3 | Tin (Sn) | 250W | ISL9V5036 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1 | 250W | 360V | TO-220AB | 390V | 1.17V | 2800 ns | 1.6V | 46A | 7000ns | 13600 ns | 300V, 1k Ω, 5V | 2.2V | 1.6V @ 4V, 10A | 32nC | -/10.8μs | |||||||||||||||||||||||||||||||||||||||||||
| STGP19NC60HD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw19nc60hd-datasheets-4405.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 130W | STGP19 | 3 | Single | 130W | 1 | Insulated Gate BIP Transistors | 25 ns | 7ns | 97 ns | SILICON | POWER CONTROL | N-CHANNEL | TO-220AB | 31ns | 600V | 2.5V | 32 ns | 600V | 40A | 272 ns | 390V, 12A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 12A | 53nC | 60A | 25ns/97ns | 85μJ (on), 189μJ (off) | |||||||||||||||||||||||||||||||||||||||
| FGH40N60SFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 10 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 290W | FGH40N60 | Single | 1 | Insulated Gate BIP Transistors | 25 ns | 115 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | TO-247AB | 45 ns | 600V | 108 ns | 600V | 80A | 170 ns | 400V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.9V @ 15V, 40A | Field Stop | 120nC | 120A | 25ns/115ns | 1.13mJ (on), 310μJ (off) | 90ns | |||||||||||||||||||||||||||||||||||
| STGW60V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa60v60df-datasheets-2509.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 20 Weeks | No SVHC | 3 | EAR99 | No | 375W | STGW60 | Single | 375W | Insulated Gate BIP Transistors | N-CHANNEL | 74ns | 600V | 2.35V | 600V | 80A | 400V, 60A, 4.7 Ω, 15V | 20V | 2.3V @ 15V, 60A | Trench Field Stop | 334nC | 240A | 60ns/208ns | 750μJ (on), 550μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGP02N120XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/infineontechnologies-sgi02n120xksa1-datasheets-5805.pdf | TO-220-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 62W | TO-220AB | 40 ns | 1200V | 6.2A | 375 ns | 800V, 2A, 91 Ω, 15V | 3.6V @ 15V, 2A | NPT | 11nC | 9.6A | 23ns/260ns | 220μJ | ||||||||||||||||||||||||||||||||||||||||||||||||
| SGS5N60RUFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/onsemiconductor-sgs5n60rufdtu-datasheets-4638.pdf | 600V | 5A | TO-220-3 Full Pack | Lead Free | 3 | 35W | Single | 35W | 55ns | 600V | 2.2V | 600V | 8A | 300V, 5A, 40 Ω, 15V | 2.8V @ 15V, 5A | 16nC | 15A | 13ns/34ns | 88μJ (on), 107μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGH40N60SMDF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgh40n60smdf-datasheets-4639.pdf | TO-247-3 | 15.6mm | 20.6mm | 4.7mm | Lead Free | 3 | 4 Weeks | 6.39g | No SVHC | 3 | yes | EAR99 | Tin | No | 8541.29.00.95 | e3 | 349W | FGH40N60 | Single | 349W | 1 | Insulated Gate BIP Transistors | 12 ns | 92 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AB | 90ns | 600V | 1.9V | 37 ns | 600V | 80A | 28ns | 132 ns | 400V, 40A, 6 Ω, 15V | 20V | 6V | 2.5V @ 15V, 40A | Field Stop | 119nC | 120A | 12ns/92ns | 1.3mJ (on), 260μJ (off) | 17ns |
