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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Continuous Collector Current | Number of Outputs | Breakdown Voltage | Power - Max | Clamping Voltage | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| STGP6NC60HD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp6nc60h-datasheets-5012.pdf | 600V | 15A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | 56W | STGP6 | 3 | Single | 56W | 1 | Insulated Gate BIP Transistors | 12 ns | 5ns | 76 ns | SILICON | POWER CONTROL | N-CHANNEL | TO-220AB | 21 ns | 600V | 1.9V | 17.3 ns | 600V | 15A | 222 ns | 390V, 3A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 3A | 13.6nC | 21A | 12ns/76ns | 20μJ (on), 68μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IGB50N60TATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igb50n60tatma1-datasheets-4999.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | *GB50N60 | 4 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 333W | 60 ns | 600V | 100A | 396 ns | 400V, 50A, 7 Ω, 15V | 2V @ 15V, 50A | Trench | 310nC | 150A | 26ns/299ns | 2.6mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FGB40T65SPD-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/onsemiconductor-fgb40t65spdf085-datasheets-5006.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | 260 | 30 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 267W | 34ns | 49 ns | 650V | 80A | 51 ns | 400V, 40A, 6 Ω, 15V | 2.4V @ 15V, 40A | Trench Field Stop | 36nC | 120A | 18ns/35ns | 970μJ (on), 280μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGB10NC60KDT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgd10nc60kt4-datasheets-5424.pdf | 600V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 8 Weeks | 2.240009g | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | 65W | GULL WING | 245 | STGB10 | 3 | Single | 30 | 60W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 17 ns | 6ns | 72 ns | 10A | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 65W | 600V | 22 ns | 600V | 2.5V | 23 ns | 600V | 20A | 242 ns | 390V, 5A, 10 Ω, 15V | 20V | 7V | 2.5V @ 15V, 5A | 19nC | 30A | 17ns/72ns | 55μJ (on), 85μJ (off) | ||||||||||||||||||||||||||||||
| IKQ75N120CH3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-ikq75n120ch3xksa1-datasheets-4915.pdf | TO-247-3 | 3 | 16 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 938W | 81 ns | 1200V | 150A | 454 ns | 600V, 75A, 6 Ω, 15V | 2.35V @ 15V, 75A | 370nC | 300A | 34ns/282ns | 6.4mJ (on), 2.8mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBH2N250 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixbh2n250-datasheets-4917.pdf | TO-247-3 | 3 | 8 Weeks | 3 | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 32W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 32W | TO-247AD | 920 ns | 2.5kV | 310 ns | 3.5V | 5A | 2500V | 252 ns | 20V | 5.5V | 3.5V @ 15V, 2A | 10.6nC | 13A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRG4BC20UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | RoHS Compliant | 2003 | /files/infineontechnologies-irg4bc20udpbf-datasheets-4826.pdf | 600V | 13A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | 60W | Single | 60W | 1 | Insulated Gate BIP Transistors | 39 ns | 15ns | 93 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 37 ns | 600V | 2.1V | 55 ns | 2.1V | 13A | 320 ns | 480V, 6.5A, 50 Ω, 15V | 20V | 6V | 2.1V @ 15V, 6.5A | 27nC | 52A | 39ns/93ns | 160μJ (on), 130μJ (off) | 170ns | ||||||||||||||||||||||||||||||||||||||||||
| IXYH24N170CV1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 28 Weeks | yes | 500W | 170ns | 1700V | 58A | 850V, 24A, 5 Ω, 15V | 4V @ 15V, 24A | 96nC | 140A | 16ns/155ns | 3.6mJ (on), 1.76mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGP4069DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/infineontechnologies-irgp4069dpbf-datasheets-4840.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 16 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 268W | Single | 268W | 1 | Insulated Gate BIP Transistors | 43 ns | 105 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 120ns | 600V | 1.6V | 78 ns | 1.85V | 76A | 42ns | 188 ns | 400V, 35A, 10 Ω, 15V | 20V | 6.5V | 1.85V @ 15V, 35A | Trench | 69nC | 105A | 46ns/105ns | 390μJ (on), 632μJ (off) | 54ns | |||||||||||||||||||||||||||||||||||||||||||
| ISL9V3040P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EcoSPARK® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Logic | ROHS3 Compliant | 2017 | /files/onsemiconductor-isl9v3040s3s-datasheets-4214.pdf | 400V | 21A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | 400V | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 3 | yes | EAR99 | No | e3 | Tin (Sn) | 150W | ISL9V3040 | Single | 150W | 1 | Insulated Gate BIP Transistors | 700 ns | 2.1μs | 4.8 μs | SILICON | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 1 | 370V | 400V | TO-220AB | 430V | 1.25V | 2800 ns | 1.6V | 21A | 7600 ns | 300V, 1k Ω, 5V | 2.2V | 1.6V @ 4V, 6A | 17nC | -/4.8μs | ||||||||||||||||||||||||||||||||||||||
| IKW75N65ES5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ikw75n65es5xksa1-datasheets-4852.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | 395W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 395W | 85 ns | 650V | 94 ns | 650V | 80A | 233 ns | 400V, 75A, 18 Ω, 15V | 1.75V @ 15V, 75A | Trench | 164nC | 300A | 40ns/144ns | 2.4mJ (on), 950μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXX200N65B4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixxx200n65b4-datasheets-4857.pdf | TO-247-3 | 28 Weeks | unknown | e3 | Matte Tin (Sn) | 1.15kW | Single | 1.15kW | Insulated Gate BIP Transistors | N-CHANNEL | 1150W | 650V | 1.7V | 370A | 400V, 100A, 1 Ω, 15V | 20V | 6.5V | 1.7V @ 15V, 160A | PT | 553nC | 1000A | 62ns/245ns | 4.4mJ (on), 2.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW15N120H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ikw15n120h3fksa1-datasheets-4859.pdf | TO-247-3 | 3 | 26 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 217W | 260ns | 49 ns | 1200V | 30A | 370 ns | 600V, 15A, 35 Ω, 15V | 2.4V @ 15V, 15A | Trench Field Stop | 75nC | 60A | 21ns/260ns | 1.55mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA25N120ANTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | /files/onsemiconductor-fga25n120antu-datasheets-4863.pdf | 1.2kV | 25A | TO-3P-3, SC-65-3 | Lead Free | 3 | 310W | FGA25N120A | Single | 310W | TO-3P | 25A | 310W | 1.2kV | 3.2V | 40A | 1200V | 40A | 600V, 25A, 10Ohm, 15V | 3.2V @ 15V, 25A | NPT | 200nC | 75A | 60ns/170ns | 4.8mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGD18N40LZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerMESH™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | ROHS3 Compliant | /files/stmicroelectronics-stgb18n40lz1-datasheets-5277.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 8 Weeks | 350.003213mg | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | VOLTAGE CLAMPING | No | e3 | Matte Tin (Sn) | 125W | GULL WING | 260 | STGD18 | 3 | Single | 30 | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 650 ms | 13.5 s | SILICON | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 125W | 420V | 420V | 1.35V | 4450 ns | 360V | 25A | 22200 ns | 300V, 10A, 5V | 16V | 1.7V @ 4.5V, 10A | 29nC | 40A | 650ns/13.5μs | |||||||||||||||||||||||||||||||||||||||
| FGD3440G2-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, EcoSPARK® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | ROHS3 Compliant | 2006 | /files/onsemiconductor-fgd3440g2-datasheets-9185.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 10 Weeks | 260.37mg | 3 | yes | No | 166W | FGD3440 | Single | Insulated Gate BIP Transistors | N-CHANNEL | 166W | 400V | 400V | 400V | 1.1V | 1.2V | 26.9A | 7000ns | 300V, 6.5A, 1k Ω, 5V | 14V | 2.2V | 1.2V @ 4V, 6A | 24nC | -/5.3μs | 15000ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA15N120ANDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | 2003 | /files/onsemiconductor-fga15n120andtu-datasheets-4887.pdf | TO-3P-3, SC-65-3 | TO-3PN | 200W | 330ns | 1200V | 24A | 600V, 15A, 20Ohm, 15V | 3.2V @ 15V, 15A | NPT | 120nC | 45A | 90ns/310ns | 3.27mJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGD7NC60HT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp7nc60h-datasheets-3482.pdf | 600V | 7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 8 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 70W | GULL WING | 260 | STGD7 | 3 | Single | 30 | 70W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 18.5 ns | 8.5ns | 116 ns | SILICON | POWER CONTROL | N-CHANNEL | 14A | 600V | TO-252AA | 600V | 2.5V | 25.5 ns | 600V | 25A | 221 ns | 390V, 7A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 7A | 35nC | 50A | 18.5ns/72ns | 95μJ (on), 115μJ (off) | |||||||||||||||||||||||||||||||||||
| STGB18N40LZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerMESH™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | ROHS3 Compliant | /files/stmicroelectronics-stgb18n40lz1-datasheets-5277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | VOLTAGE CLAMPING | Tin | No | e3 | 150W | GULL WING | STGB18 | 4 | Single | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 650 ns | 13.5 μs | SILICON | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 150W | 420V | 420V | 1.35V | 4450 ns | 360V | 30A | 22200 ns | 300V, 10A, 5V | 16V | 1.7V @ 4.5V, 10A | 29nC | 40A | 650ns/13.5μs | ||||||||||||||||||||||||||||||||||||||||||
| HGTG30N60A4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-hgtg30n60a4-datasheets-8446.pdf | 600V | 75A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 4 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 463W | HGTG30N60 | Single | 463W | 1 | Insulated Gate BIP Transistors | 25 ns | 12ns | 150 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 75A | 600V | 1.8V | 35 ns | 600V | 75A | 238 ns | 390V, 30A, 3 Ω, 15V | 20V | 7V | 2.6V @ 15V, 30A | 225nC | 240A | 25ns/150ns | 280μJ (on), 240μJ (off) | 70ns | ||||||||||||||||||||||||||||||||||||
| IKW40N120CS6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | /files/infineontechnologies-ikw40n120cs6xksa1-datasheets-4819.pdf | TO-247-3 | 26 Weeks | 500W | 400ns | 1200V | 80A | 600V, 40A, 9 Ω, 15V | 2.15V @ 15V, 40A | Trench Field Stop | 285nC | 160A | 27ns/315ns | 2.55mJ (on), 1.55mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GT60BRDQ2G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gt60brdq2g-datasheets-4823.pdf | 600V | 110A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 25 Weeks | 38.000013g | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 446W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 110A | 22 ns | 600V | 2V | 46 ns | 600V | 110A | 365 ns | 400V, 50A, 5 Ω, 15V | 30V | 5V | 2.5V @ 15V, 50A | NPT | 240nC | 150A | 14ns/240ns | 995μJ (on), 1070μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| SGF40N60UFTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | /files/onsemiconductor-sgf40n60uftu-datasheets-4759.pdf | TO-3P-3 Full Pack | SG*40N60 | TO-3PF | 100W | 600V | 40A | 300V, 20A, 10Ohm, 15V | 2.6V @ 15V, 20A | 97nC | 160A | 15ns/65ns | 160μJ (on), 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBH16N170 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | BIMOSFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | Not Applicable | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixbh16n170-datasheets-8409.pdf | 1.7kV | 16A | TO-247-3 | Lead Free | 3 | 28 Weeks | 6.500007g | 3 | yes | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | 3 | Single | 150W | 1 | Insulated Gate BIP Transistors | 15 ns | 25ns | 160 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | 1.32 μs | 1.7kV | 220 ns | 1.7kV | 40A | 1700V | 940 ns | 20V | 5.5V | 3.3V @ 15V, 16A | 72nC | 120A | |||||||||||||||||||||||||||||||||||||||||||||
| APT75GN60LDQ3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 25 Weeks | 10.6g | yes | HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | 536W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 47 ns | 385 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 155A | 600V | 1.45V | 95 ns | 600V | 155A | 485 ns | 400V, 75A, 1 Ω, 15V | 30V | 6.5V | 1.85V @ 15V, 75A | Trench Field Stop | 485nC | 225A | 47ns/385ns | 2500μJ (on), 2140μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| NGTB50N120FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/onsemiconductor-ngtb50n120fl2wg-datasheets-4765.pdf | TO-247-3 | 16.25mm | 21.4mm | 5.3mm | Lead Free | 7 Weeks | 6.500007g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | 535W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 535W | 256 ns | 1.2kV | 2.2V | 1.2kV | 100A | 1200V | 600V, 50A, 10 Ω, 15V | 20V | 6.5V | 2.2V @ 15V, 50A | Trench Field Stop | 311nC | 200A | 118ns/282ns | 4.4mJ (on), 1.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| RGS80TSX2DHRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | Standard | /files/rohmsemiconductor-rgs80tsx2dhrc11-datasheets-4771.pdf | TO-247-3 | 8 Weeks | 555W | 198ns | 1200V | 80A | 600V, 40A, 10 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 104nC | 120A | 49ns/199ns | 3mJ (on), 3.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKZ50N65EH5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikz50n65eh5xksa1-datasheets-4773.pdf | TO-247-4 | Lead Free | 4 | 16 Weeks | 4 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 273W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 273W | 53 ns | 650V | 27 ns | 650V | 85A | 311 ns | 400V, 25A, 12 Ω, 15V | 2.1V @ 15V, 50A | Trench | 109nC | 200A | 20ns/250ns | 410μJ (on), 190μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW40N120H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikw40n120h3fksa1-datasheets-4778.pdf | TO-247-3 | 3 | 26 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 483W | 355ns | 78 ns | 1200V | 80A | 414 ns | 600V, 40A, 12 Ω, 15V | 2.4V @ 15V, 40A | Trench Field Stop | 185nC | 160A | 30ns/290ns | 4.4mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| HGTG30N60C3D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-hgtg30n60c3d-datasheets-8425.pdf | 600V | 30A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 7 Weeks | 6.39g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | NPN | 208W | HGTG30N60 | Single | 208W | 1 | 40 ns | 45ns | 320 ns | SILICON | MOTOR CONTROL | 60ns | 600V | 1.5V | 85 ns | 600V | 63A | 550 ns | 1.8V @ 15V, 30A | 162nC | 252A | 1.05mJ (on), 2.5mJ (off) |
