Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Continuous Collector Current | Switching Frequency | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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APT30GP60BDQ1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/microsemicorporation-apt30gp60bdq1g-datasheets-5039.pdf | 600V | 30A | TO-247-3 | Lead Free | 3 | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 463W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 463W | 600V | 31 ns | 600V | 100A | 165 ns | 400V, 30A, 5 Ω, 15V | 2.7V @ 15V, 30A | PT | 90nC | 120A | 13ns/55ns | 260μJ (on), 250μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
IRG7PH42UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irg7ph42udep-datasheets-5409.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 16 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 320W | Single | 320W | 1 | Insulated Gate BIP Transistors | 25 ns | 229 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 153 ns | 1.2kV | 1.7V | 51 ns | 2V | 85A | 41ns | 1200V | 444 ns | 600V, 30A, 10 Ω, 15V | 6V | 2V @ 15V, 30A | Trench | 157nC | 90A | 25ns/229ns | 2.11mJ (on), 1.18mJ (off) | 86ns | ||||||||||||||||||||||||||||||||||||
STGP40V60F | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40v60f-datasheets-0540.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 20 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | 283W | STGP40 | Single | 283W | 52 ns | 208 ns | 600V | 2.35V | 600V | 80A | 400V, 40A, 10 Ω, 15V | 2.3V @ 15V, 40A | Trench Field Stop | 226nC | 160A | 52ns/208ns | 456μJ (on), 411μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
IGP30N60H3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igp30n60h3xksa1-datasheets-5060.pdf | TO-220-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 187W | TO-220AB | 40 ns | 600V | 60A | 262 ns | 400V, 30A, 10.5 Ω, 15V | 2.4V @ 15V, 30A | Trench Field Stop | 165nC | 120A | 18ns/207ns | 1.17mJ | |||||||||||||||||||||||||||||||||||||||||||||
IRGB4620DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-irgp4620depbf-datasheets-9766.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 16 Weeks | No SVHC | 3 | EAR99 | 140W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 140W | 68 ns | 600V | 1.55V | 1.85V | 32A | 400V, 12A, 22 Ω, 15V | 20V | 6.5V | 1.85V @ 15V, 12A | 25nC | 36A | 31ns/83ns | 75μJ (on), 225μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
STGP14NC60KD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf14nc60kd-datasheets-4482.pdf | 600V | 25A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA FAST | Tin | No | e3 | 80W | STGP14 | 3 | Single | 28W | 1 | Insulated Gate BIP Transistors | 22.5 ns | 8.5ns | 116 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 37 ns | 600V | 2V | 31.5 ns | 600V | 25A | 340 ns | 390V, 7A, 10 Ω, 15V | 20V | 7V | 2.5V @ 15V, 7A | 34.4nC | 50A | 22.5ns/116ns | 82μJ (on), 155μJ (off) | |||||||||||||||||||||||||||||||
IXYH82N120C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixyh82n120c3-datasheets-5073.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 28 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | 1.25kW | 3 | Single | 1.04kW | 1 | Insulated Gate BIP Transistors | Not Qualified | 29 ns | 192 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1250W | TO-247AD | 1.2kV | 2.75V | 119 ns | 1.2kV | 200A | 1200V | 295 ns | 600V, 80A, 2 Ω, 15V | 20V | 5V | 3.2V @ 15V, 82A | 215nC | 380A | 29ns/192ns | 4.95mJ (on), 2.78mJ (off) | ||||||||||||||||||||||||||||||||||||
IGW30N60TPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-igw30n60tpxksa1-datasheets-5076.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | 200W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 200W | 600V | 38 ns | 1.8V | 53A | 279 ns | 400V, 30A, 10.5 Ω, 15V | 1.8V @ 15V, 30A | Trench Field Stop | 130nC | 90A | 15ns/179ns | 710μJ (on), 420μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
HGTG10N120BND | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-hgtg10n120bnd-datasheets-5080.pdf | 1.2kV | 35A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 7 Weeks | 6.39g | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | No | 8541.29.00.95 | e3 | Tin (Sn) | 298W | Single | 298W | 1 | 23 ns | 165ns | 165 ns | SILICON | MOTOR CONTROL | N-CHANNEL | 35A | 70 ns | 1.2kV | 2.45V | 32 ns | 1.2kV | 35A | 1200V | 330 ns | 960V, 10A, 10 Ω, 15V | 2.7V @ 15V, 10A | NPT | 100nC | 80A | 23ns/165ns | 850μJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||||
STGWT30H60DFB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwa30h60dfb-datasheets-1560.pdf | TO-3P-3, SC-65-3 | 15.8mm | 14.1mm | 5mm | 32 Weeks | 6.756003g | 3 | EAR99 | 260W | NOT SPECIFIED | STGWT30 | Single | NOT SPECIFIED | 260W | 53 ns | 600V | 1.55V | 600V | 60A | 400V, 30A, 10 Ω, 15V | 2V @ 15V, 30A | Trench Field Stop | 149nC | 120A | 37ns/146ns | 383μJ (on), 293μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
STGW35HF60WDI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw35hf60wdi-datasheets-5097.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | 200W | STGW35 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 35 ns | 175 ns | SILICON | POWER CONTROL | N-CHANNEL | 200W | 85 ns | 600V | 45 ns | 600V | 60A | 295 ns | 390V, 20A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 140nC | 150A | 30ns/175ns | 185μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
IKW08T120FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/infineontechnologies-ikw08t120fksa1-datasheets-5108.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | 70W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 80 ns | 1.2kV | 66 ns | 1.2kV | 16A | 1200V | 710 ns | 600V, 8A, 81 Ω, 15V | 2.2V @ 15V, 8A | NPT, Trench Field Stop | 53nC | 24A | 40ns/450ns | 1.37mJ | |||||||||||||||||||||||||||||||||||||||||
IHW25N120E1XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | 2016 | /files/infineontechnologies-ihw25n120e1xksa1-datasheets-5111.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | 231W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 231W | 1.2kV | 2V | 50A | 1200V | 1677 ns | 2V @ 15V, 25A | NPT and Trench | 147nC | 75A | 800μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
FGH30S130P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-fgh30s130p-datasheets-5117.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 12 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 500W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 500W | TO-247AB | 1.3kV | 1.9V | 413 ns | 1.3kV | 60A | 1300V | 905 ns | 25V | 7.5V | 2.3V @ 15V, 30A | Trench Field Stop | 78nC | 90A | 210ns | ||||||||||||||||||||||||||||||||||||
NGTB15N120FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb15n120fl2wg-datasheets-5125.pdf | TO-247-3 | Lead Free | 38 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 294W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 294W | 110 ns | 1.2kV | 2.4V | 30A | 1200V | 600V, 15A, 10 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 15A | Trench Field Stop | 109nC | 60A | 64ns/132ns | 1.2mJ (on), 370μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
IGW30N65L5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-igw30n65l5xksa1-datasheets-5130.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | Halogen Free | 227W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 50Hz | 227W | 650V | 44 ns | 650V | 85A | 520 ns | 400V, 30A, 10 Ω, 15V | 1.35V @ 15V, 30A | 168nC | 120A | 33ns/308ns | 470μJ (on), 1.35mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
AIKQ120N60CTXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-aikq120n60ctxksa1-datasheets-4925.pdf | TO-247-3 | 39 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 833W | 600V | 160A | 400V, 120A, 3 Ω, 15V | 2V @ 15V, 120A | Trench Field Stop | 772nC | 480A | 33ns/310ns | 4.1mJ (on), 2.8mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SGH40N60UFDM1TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | /files/onsemiconductor-sgh40n60ufdtu-datasheets-4364.pdf | TO-3P-3, SC-65-3 | SG*40N60 | TO-3P | 160W | 60ns | 600V | 40A | 300V, 20A, 10Ohm, 15V | 2.6V @ 15V, 20A | 97nC | 160A | 15ns/65ns | 160μJ (on), 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STGF7H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb7h60df-datasheets-0733.pdf | TO-220-3 Full Pack | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | 24W | NOT SPECIFIED | STGF7 | NOT SPECIFIED | 24W | 136 ns | 600V | 1.95V | 14A | 400V, 7A, 47 Ω, 15V | 1.95V @ 15V, 7A | Trench Field Stop | 46nC | 28A | 30ns/160ns | 99μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STGF4M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf4m65df2-datasheets-4951.pdf | TO-220-3 | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STGF4 | NOT SPECIFIED | 23W | 133ns | 650V | 8A | 400V, 4A, 47 Ω, 15V | 2.1V @ 15V, 4A | Trench Field Stop | 15.2nC | 16A | 12ns/86ns | 40μJ (on), 136μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STGF5H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgf5h60df-datasheets-4970.pdf | TO-220-3 Full Pack | 20mm | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | 24W | NOT SPECIFIED | STGF5 | NOT SPECIFIED | 24W | 175°C | 30 ns | 140 ns | 10A | 134.5 ns | 600V | 1.5V | 600V | 10A | 400V, 5A, 47 Ω, 15V | 1.95V @ 15V, 5A | Trench Field Stop | 43nC | 20A | 30ns/140ns | 56μJ (on), 78.5μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IKQ100N60TXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/infineontechnologies-ikq100n60txksa1-datasheets-4974.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 714W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 714W | 230 ns | 600V | 83 ns | 600V | 160A | 393 ns | 400V, 100A, 3.6 Ω, 15V | 2V @ 15V, 100A | Trench Field Stop | 610nC | 400A | 30ns/290ns | 3.1mJ (on), 2.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
FGB20N60SFD-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgb20n60sfdf085-datasheets-4978.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 7 Weeks | 1.31247g | 3 | yes | not_compliant | e3 | Tin (Sn) | 208W | GULL WING | NOT SPECIFIED | FGB20N60 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 208W | 600V | 111 ns | 600V | 2.4V | 28 ns | 600V | 40A | 21ns | 123 ns | 400V, 20A, 10 Ω, 15V | 20V | 6.5V | 2.85V @ 15V, 20A | Field Stop | 63nC | 60A | 10ns/90ns | 310μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||||||
STGB6NC60HDT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp6nc60h-datasheets-5012.pdf | 600V | 15A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 8 Weeks | 2.240009g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | MATTE TIN | 56W | GULL WING | 245 | STGB6 | 3 | Single | 30 | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 13 ns | 5ns | 98 ns | SILICON | POWER CONTROL | N-CHANNEL | 12A | 600V | 21 ns | 600V | 2.7V | 17.3 ns | 600V | 15A | 222 ns | 390V, 3A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 3A | 13.6nC | 21A | 12ns/76ns | 20μJ (on), 68μJ (off) | |||||||||||||||||||||||||||||
IXYN30N170CV1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/ixys-ixyn30n170cv1-datasheets-4992.pdf | SOT-227-4, miniBLOC | 24 Weeks | yes | unknown | 680W | 680W | 160 ns | 1.7kV | 3.7V | 88A | 1700V | 850V, 30A, 2.7 Ω, 15V | 3.7V @ 15V, 30A | 140nC | 275A | 28ns/150ns | 5.9mJ (on), 3.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STGP6NC60HD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp6nc60h-datasheets-5012.pdf | 600V | 15A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | 56W | STGP6 | 3 | Single | 56W | 1 | Insulated Gate BIP Transistors | 12 ns | 5ns | 76 ns | SILICON | POWER CONTROL | N-CHANNEL | TO-220AB | 21 ns | 600V | 1.9V | 17.3 ns | 600V | 15A | 222 ns | 390V, 3A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 3A | 13.6nC | 21A | 12ns/76ns | 20μJ (on), 68μJ (off) | |||||||||||||||||||||||||||||||||
IGB50N60TATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igb50n60tatma1-datasheets-4999.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | *GB50N60 | 4 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 333W | 60 ns | 600V | 100A | 396 ns | 400V, 50A, 7 Ω, 15V | 2V @ 15V, 50A | Trench | 310nC | 150A | 26ns/299ns | 2.6mJ | |||||||||||||||||||||||||||||||||||||||||||
FGB40T65SPD-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | RoHS Compliant | 2013 | /files/onsemiconductor-fgb40t65spdf085-datasheets-5006.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | 260 | 30 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 267W | 34ns | 49 ns | 650V | 80A | 51 ns | 400V, 40A, 6 Ω, 15V | 2.4V @ 15V, 40A | Trench Field Stop | 36nC | 120A | 18ns/35ns | 970μJ (on), 280μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
NGB8204NT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Logic | Non-RoHS Compliant | 2006 | /files/onsemiconductor-ngb8204nt4-datasheets-5012.pdf | 400V | 18A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | not_compliant | e0 | Tin/Lead (Sn80Pb20) | 115W | SINGLE | GULL WING | 235 | NGB8204 | 3 | NOT SPECIFIED | 115W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 430V | 5200 ns | 2.5V | 18A | 7000ns | 13000 ns | 18V | 1.9V | 2.5V @ 4V, 15A | 50A | 15000ns | ||||||||||||||||||||||||||||||||||||||||
IRG4BC20SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2000 | /files/infineontechnologies-irg4bc20spbf-datasheets-5014.pdf | 600V | 19A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | 60W | SINGLE | Dual | 60W | 1 | Insulated Gate BIP Transistors | 27 ns | 9.7ns | 540 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 1.4V | 38 ns | 1.6V | 19A | 1540 ns | 480V, 10A, 50 Ω, 15V | 20V | 6V | 1.6V @ 15V, 10A | 27nC | 38A | 27ns/540ns | 120μJ (on), 2.05mJ (off) |
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