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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Continuous Collector Current | Switching Frequency | Power - Max | Max Breakdown Voltage | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise Time-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| NGTB40N120L3WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | 2009 | /files/onsemiconductor-ngtb40n120l3wg-datasheets-5243.pdf | TO-247-3 | Lead Free | 18 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 454W | 454W | 86 ns | 1.2kV | 1.55V | 2V | 160A | 1200V | 600V, 40A, 10 Ω, 15V | 2V @ 15V, 40A | Trench Field Stop | 220nC | 18ns/150ns | 1.5mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW35HF60W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw35hf60w-datasheets-5248.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 6.500007g | EAR99 | LOW CONDUCTION LOSS | No | e3 | Tin (Sn) | 200W | STGW35 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 30 ns | 175 ns | SILICON | POWER CONTROL | N-CHANNEL | 200W | 600V | 2.5V | 45 ns | 600V | 60A | 295 ns | 400V, 20A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 140nC | 150A | 30ns/175ns | 290μJ (on), 185μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IXXH110N65C4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/ixys-ixxh110n65c4-datasheets-5252.pdf | TO-247-3 | Lead Free | 28 Weeks | 3 | No | 880W | 110N65 | Single | 880W | Insulated Gate BIP Transistors | N-CHANNEL | 650V | 1.98V | 2.35V | 234A | 400V, 55A, 2 Ω, 15V | 20V | 6.5V | 2.35V @ 15V, 110A | PT | 180nC | 600A | 35ns/143ns | 2.3mJ (on), 600μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IGW15N120H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw15n120h3fksa1-datasheets-5254.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 217W | 49 ns | 1200V | 30A | 370 ns | 600V, 15A, 35 Ω, 15V | 2.4V @ 15V, 15A | Trench Field Stop | 75nC | 60A | 21ns/260ns | 1.55mJ | |||||||||||||||||||||||||||||||||||||||||||||
| STGW40V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40v60df-datasheets-5258.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 20 Weeks | 3 | EAR99 | No | 283W | STGW40 | Single | 283W | 41ns | 600V | 2.35V | 600V | 80A | 400V, 40A, 10 Ω, 15V | 2.3V @ 15V, 40A | Trench Field Stop | 226nC | 160A | 52ns/208ns | 456μJ (on), 411μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW20N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-ikw20n60h3fksa1-datasheets-5262.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | 170W | *KW20N60 | 3 | Single | 1 | SILICON | POWER CONTROL | N-CHANNEL | 170W | 112 ns | 600V | 37 ns | 600V | 40A | 241 ns | 400V, 20A, 14.6 Ω, 15V | 2.4V @ 15V, 20A | Trench Field Stop | 120nC | 80A | 17ns/194ns | 800μJ | |||||||||||||||||||||||||||||||||||||||||||
| IKW30N60TFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ikw30n60tfksa1-datasheets-5266.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | HIGH SWITCHING SPEED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | *KW30N60 | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 187W | TO-247AC | 143ns | 50 ns | 600V | 60A | 382 ns | 400V, 30A, 10.6 Ω, 15V | 2.05V @ 15V, 30A | Trench Field Stop | 167nC | 90A | 23ns/254ns | 1.46mJ | ||||||||||||||||||||||||||||||||||||||||
| STGW35NB60SD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw35nb60sd-datasheets-5276.pdf | 600V | 35A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | 200W | STGW35 | 3 | Single | 200W | 1 | Insulated Gate BIP Transistors | 70ns | 70A | SILICON | MOTOR CONTROL | N-CHANNEL | 600V | 600V | TO-247AA | 44 ns | 600V | 1.7V | 153 ns | 600V | 70A | 3600 ns | 480V, 20A, 100 Ω, 15V | 20V | 5V | 1.7V @ 15V, 20A | 83nC | 250A | 92ns/1.1μs | 840μJ (on), 7.4mJ (off) | ||||||||||||||||||||||||||||||
| STGB20NB41LZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb20nb41lzt4-datasheets-4966.pdf | 20V | 20A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 200W | GULL WING | 245 | STGB20 | 3 | Single | 30 | 200W | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | 1 μs | 220ns | 12.1 μs | SILICON | COLLECTOR | AUTOMOTIVE IGNITION | N-CHANNEL | 442V | 442V | 2V | 1220 ns | 382V | 40A | 16100 ns | 320V, 20A, 1k Ω, 5V | 2.4V | 2V @ 4.5V, 20A | 46nC | 80A | 1μs/12.1μs | 5mJ (on), 12.9mJ (off) | |||||||||||||||||||||||||||||||
| FGH40T65SPD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/onsemiconductor-fgh40t65spdf155-datasheets-5284.pdf | TO-247-3 | 10 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 267W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 267W | 34 ns | 650V | 2.51V | 650V | 80A | 400V, 40A, 6 Ω, 15V | 20V | 7.5V | 2.4V @ 15V, 40A | Trench Field Stop | 35nC | 120A | 16ns/37ns | 1.16mJ (on), 280μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IHW30N65R5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ihw30n65r5xksa1-datasheets-5292.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 176W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 176W | 95 ns | 650V | 44 ns | 650V | 60A | 258 ns | 400V, 30A, 13 Ω, 15V | 1.7V @ 15V, 30A | Trench | 153nC | 90A | 29ns/220ns | 850μJ (on), 240μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| FGH40T100SMD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/onsemiconductor-fgh40t100smdf155-datasheets-2172.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 4 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 333W | Single | 333W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AB | 78 ns | 1kV | 2.3V | 76 ns | 1kV | 80A | 64ns | 1000V | 305 ns | 600V, 40A, 10 Ω, 15V | 20V | 6.5V | 2.3V @ 15V, 40A | Trench Field Stop | 265nC | 120A | 29ns/285ns | 2.35mJ (on), 1.15mJ (off) | ||||||||||||||||||||||||||||||||
| IKW30N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/infineontechnologies-ikw30n60h3fksa1-datasheets-5305.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | 187W | NOT SPECIFIED | *KW30N60 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | POWER CONTROL | N-CHANNEL | 187W | 38 ns | 600V | 50 ns | 600V | 60A | 262 ns | 400V, 30A, 10.5 Ω, 15V | 2.4V @ 15V, 30A | Trench Field Stop | 165nC | 120A | 21ns/207ns | 1.38mJ | |||||||||||||||||||||||||||||||||||||||||
| STGW30NC60KD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw30nc60kd-datasheets-5310.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 8 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA FAST | No | 200W | STGW30 | 3 | Single | 1 | Insulated Gate BIP Transistors | 29 ns | 120 ns | SILICON | POWER CONTROL | N-CHANNEL | 200W | 40 ns | 600V | 41 ns | 600V | 60A | 290 ns | 480V, 20A, 10 Ω, 15V | 20V | 6.5V | 2.7V @ 15V, 20A | 96nC | 125A | 29ns/120ns | 350μJ (on), 435μJ (off) | |||||||||||||||||||||||||||||||||||||
| NGTB25N120FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb25n120fl2wg-datasheets-5228.pdf | TO-247-3 | Lead Free | 33 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | 385W | NOT SPECIFIED | Single | NOT SPECIFIED | Insulated Gate BIP Transistors | N-CHANNEL | 385W | 154 ns | 1.2kV | 2.4V | 50A | 1200V | 600V, 25A, 10 Ω, 15V | 20V | 6.5V | 2.4V @ 15V, 25A | Field Stop | 178nC | 100A | 87ns/179ns | 1.95mJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| HGT1S20N60C3S9A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-hgt1s20n60c3s9a-datasheets-4486.pdf | 600V | 45A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 44 Weeks | 1.31247g | 3 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | LOW CONDUCTION LOSS | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 164W | GULL WING | 260 | Single | 30 | 164W | 1 | Not Qualified | R-PSSO-G2 | 28 ns | 151 ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 15A | 600V | 1.4V | 52 ns | 600V | 45A | 388 ns | 480V, 20A, 10 Ω, 15V | 1.8V @ 15V, 20A | 91nC | 300A | 28ns/151ns | 295μJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||
| IXGR48N60C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgr48n60c3d1-datasheets-5134.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | 125W | NOT SPECIFIED | IXG*48N60 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | 125W | 25 ns | 600V | 45 ns | 2.7V | 56A | 187 ns | 400V, 30A, 3 Ω, 15V | 20V | 5.5V | 2.7V @ 15V, 30A | PT | 77nC | 230A | 19ns/60ns | 410μJ (on), 230μJ (off) | ||||||||||||||||||||||||||||||||||||
| IKW30N65EL5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ikw30n65el5xksa1-datasheets-5137.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 227W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 50Hz | 227W | 100 ns | 650V | 44 ns | 650V | 85A | 520 ns | 400V, 30A, 10 Ω, 15V | 1.35V @ 15V, 30A | 168nC | 120A | 33ns/308ns | 470μJ (on), 1.35mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| STGP6M65DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | M | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgp6m65df2-datasheets-5141.pdf | TO-220-3 | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STGP6 | NOT SPECIFIED | 88W | 140ns | 650V | 12A | 400V, 6A, 22 Ω, 15V | 2V @ 15V, 6A | Trench Field Stop | 21.2nC | 24A | 12ns/86ns | 40μJ (on), 136μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW20V60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb20v60df-datasheets-1181.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 20 Weeks | 3 | EAR99 | No | 167W | STGW20 | Single | 167W | Insulated Gate BIP Transistors | N-CHANNEL | 40ns | 600V | 2.3V | 600V | 40A | 400V, 20A, 15V | 20V | 2.2V @ 15V, 20A | Trench Field Stop | 116nC | 80A | 38ns/149ns | 200μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FGH80N60FD2TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | 3 | 5 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 290W | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | TO-247AB | 61 ns | 600V | 600V | 74 ns | 600V | 80A | 201 ns | 400V, 40A, 10 Ω, 15V | 20V | 7V | 2.4V @ 15V, 40A | Field Stop | 120nC | 160A | 21ns/126ns | 1mJ (on), 520μJ (off) | 100ns | ||||||||||||||||||||||||||||||||||
| IRGB4062DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-irgp4062depbf-datasheets-9490.pdf | TO-220-3 | 10.6426mm | 9.02mm | 4.82mm | Lead Free | 3 | 26 Weeks | 6.000006g | No SVHC | 3 | EAR99 | No | 250W | Single | 250W | 1 | Insulated Gate BIP Transistors | 53 ns | 22ns | 115 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 89 ns | 600V | 1.65V | 64 ns | 1.95V | 48A | 164 ns | 400V, 24A, 10 Ω, 15V | 20V | 6.5V | 1.95V @ 15V, 24A | Trench | 50nC | 72A | 41ns/104ns | 115μJ (on), 600μJ (off) | 41ns | ||||||||||||||||||||||||||||||||||
| AUIRG4PH50S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2007 | /files/infineontechnologies-auirg4ph50s-datasheets-5177.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | 3 | 9 Weeks | No SVHC | 3 | EAR99 | No | 200W | Single | 200W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | N-CHANNEL | TO-247AC | 1.2kV | 1.7V | 62 ns | 1.7V | 57A | 1200V | 2170 ns | 960V, 33A, 5 Ω, 15V | 20V | 6V | 1.7V @ 15V, 33A | 167nC | 114A | 32ns/845ns | 1.8mJ (on), 19.6mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| FGA20N120FTDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-fga20n120ftdtu-datasheets-5185.pdf | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 11 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 298W | Single | Insulated Gate BIP Transistors | 30 ns | 143 ns | N-CHANNEL | 298W | 1.2kV | 447 ns | 1.2kV | 1.2kV | 40A | 1200V | 25V | 7.5V | 2V @ 15V, 20A | Trench Field Stop | 137nC | 60A | ||||||||||||||||||||||||||||||||||||||||||
| IGW50N60TPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | -40°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | 2012 | /files/infineontechnologies-igw50n60tpxksa1-datasheets-5193.pdf | TO-247-3 | 3 | 16 Weeks | yes | EAR99 | FAST SWITCHING | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 319.2W | TO-247AC | 60 ns | 600V | 80A | 396 ns | 400V, 50A, 7 Ω, 15V | 1.8V @ 15V, 50A | Trench Field Stop | 249nC | 150A | 20ns/215ns | 1.53mJ (on), 850μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| IKP40N65F5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikp40n65f5xksa1-datasheets-5197.pdf | TO-220-3 | Lead Free | 26 Weeks | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 255W | NOT SPECIFIED | Single | NOT SPECIFIED | 255W | 60 ns | 650V | 1.6V | 1.6V | 74A | 400V, 20A, 15 Ω, 15V | 2.1V @ 15V, 40A | 95nC | 120A | 19ns/160ns | 360μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXYP50N65C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixyp50n65c3-datasheets-5202.pdf | TO-220-3 | 24 Weeks | 6.000006g | unknown | 600W | Single | 600W | 650V | 1.74V | 2.1V | 130A | 400V, 36A, 5 Ω, 15V | 2.1V @ 15V, 36A | PT | 80nC | 250A | 22ns/80ns | 1.3mJ (on), 370μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW50N65H5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikw50n65h5fksa1-datasheets-5204.pdf | TO-247-3 | Lead Free | 14 Weeks | Unknown | 3 | yes | EAR99 | e3 | Tin (Sn) | 305W | NOT SPECIFIED | Single | NOT SPECIFIED | 305W | 57 ns | 650V | 1.65V | 1.65V | 80A | 400V, 25A, 12 Ω, 15V | 2.1V @ 15V, 50A | 120nC | 150A | 21ns/180ns | 520μJ (on), 180μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IKW50N65EH5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2003 | /files/infineontechnologies-ikw50n65eh5xksa1-datasheets-5210.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 275W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 275W | 81 ns | 650V | 54 ns | 650V | 80A | 220 ns | 400V, 50A, 12 Ω, 15V | 2.1V @ 15V, 50A | Trench | 120nC | 200A | 25ns/172ns | 1.5mJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| HGTG20N60A4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/onsemiconductor-hgtg20n60a4-datasheets-8622.pdf | 600V | 70A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 4 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOW CONDUCTION LOSS | Tin | No | 8541.29.00.95 | e3 | 290W | HGTG20N60 | Single | 290W | 1 | Insulated Gate BIP Transistors | 15 ns | 12ns | 73 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 1.8V | 28 ns | 600V | 70A | 160 ns | 390V, 20A, 3 Ω, 15V | 20V | 7V | 2.7V @ 15V, 20A | 142nC | 280A | 15ns/73ns | 105μJ (on), 150μJ (off) |
