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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| IXXX200N60C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixxx200n60c3-datasheets-5426.pdf | TO-247-3 | 3 | 28 Weeks | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 1630W | 600V | 143 ns | 2.1V | 340A | 240 ns | 360V, 100A, 1 Ω, 15V | 20V | 6V | 2.1V @ 15V, 100A | PT | 315nC | 900A | 47ns/125ns | 3mJ (on), 1.7mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IXGH30N120B3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgt30n120b3d1-datasheets-0574.pdf | TO-247-3 | Lead Free | 3 | 20 Weeks | 6.500007g | 3 | yes | LOW CONDUCTION LOSS | 300W | NOT SPECIFIED | IXG*30N120 | 3 | Single | NOT SPECIFIED | 300W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 100ns | 1.2kV | 2.96V | 56 ns | 1.2kV | 150A | 1200V | 471 ns | 960V, 30A, 5 Ω, 15V | 20V | 5V | 3.5V @ 15V, 30A | PT | 87nC | 16ns/127ns | 3.47mJ (on), 2.16mJ (off) | ||||||||||||||||||||||||||||||||||
| RGPR10BM40FHTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -40°C~75°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 107W | 460V | 20A | 300V, 8A, 100 Ω, 5V | 2.0V @ 5V, 10A | 14nC | 500ns/4μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGY40NC60VD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgy40nc60vd-datasheets-5442.pdf | 600V | 50A | TO-247-3 | 15.9mm | 20.3mm | 5.3mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | 260W | STGY40 | 3 | Single | 260W | 1 | Insulated Gate BIP Transistors | 43 ns | 19ns | 170 ns | 50A | SILICON | POWER CONTROL | N-CHANNEL | 600V | 44ns | 600V | 2.5V | 61 ns | 600V | 80A | 247 ns | 390V, 40A, 3.3 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 40A | 214nC | 43ns/140ns | 330μJ (on), 720μJ (off) | |||||||||||||||||||||||||||||
| IKW75N65EH5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikw75n65eh5xksa1-datasheets-5448.pdf | TO-247-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 395W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 395W | 92 ns | 650V | 61 ns | 650V | 90A | 232 ns | 400V, 75A, 8 Ω, 15V | 2.1V @ 15V, 75A | Trench | 160nC | 300A | 28ns/174ns | 2.3mJ (on), 900μJ (off) | ||||||||||||||||||||||||||||||||||||||||
| NGTB75N65FL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb75n65fl2wg-datasheets-5453.pdf | TO-247-3 | Lead Free | 24 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | 595W | Single | 595W | 80 ns | 650V | 2V | 100A | 400V, 75A, 10 Ω, 15V | 2V @ 15V, 75A | Trench Field Stop | 310nC | 200A | 110ns/270ns | 1.5mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGPS46160DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-irgps46160dpbf-datasheets-5459.pdf | TO-247-3 | 16.1mm | 20.8mm | 5.5mm | 16 Weeks | 38.000013g | No SVHC | 3 | EAR99 | 750W | NOT SPECIFIED | Single | NOT SPECIFIED | 750W | 130 ns | 600V | 1.7V | 2.05V | 240A | 400V, 120A, 4.7 Ω, 15V | 2.05V @ 15V, 120A | 240nC | 360A | 80ns/190ns | 5.75mJ (on), 3.43mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRGP4068DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/infineontechnologies-irgp4068dpbf-datasheets-5464.pdf | 600V | 96A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 26 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 330W | Single | 330W | 1 | Insulated Gate BIP Transistors | 145 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 600V | 2.14V | 180 ns | 2.14V | 96A | 210 ns | 400V, 48A, 10 Ω, 15V | 20V | 6.5V | 2.14V @ 15V, 48A | Trench | 95nC | 144A | -/145ns | 1.28mJ (off) | ||||||||||||||||||||||||||||||||||
| IXYT25N250CHV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/ixys-ixyt25n250chv-datasheets-5473.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | yes | 937W | 34ns | 2500V | 95A | 1250V, 25A, 5 Ω, 15V | 4V @ 15V, 25A | 147nC | 235A | 15ns/230ns | 8.3mJ (on), 7.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXH80N65B4H1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX4™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/ixys-ixxh80n65b4h1-datasheets-5475.pdf | TO-247-3 | Lead Free | 18 Weeks | 625W | Single | 625W | 150ns | 650V | 1.65V | 2V | 160A | 400V, 80A, 3 Ω, 15V | 2V @ 15V, 80A | PT | 120nC | 430A | 38ns/120ns | 3.77mJ (on), 1.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH32N170A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | Not Applicable | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixgh32n170a-datasheets-5477.pdf | 1.7kV | 75A | TO-247-3 | Lead Free | 3 | 30 Weeks | 6.500007g | 3 | yes | No | 350W | IXG*32N170 | 3 | Single | 350W | 1 | 57ns | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-247AD | 1.7kV | 4V | 107 ns | 1.7kV | 32A | 1700V | 370 ns | 850V, 32A, 2.7 Ω, 15V | 5V @ 15V, 21A | NPT | 155nC | 110A | 46ns/260ns | 1.5mJ (off) | ||||||||||||||||||||||||||||||||||||||
| IXYH60N90C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh60n90c3-datasheets-5406.pdf | TO-247-3 | 3 | 8 Weeks | 38.000013g | 750W | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 750W | TO-247AD | 900V | 2.7V | 104 ns | 2.7V | 140A | 268 ns | 450V, 60A, 3 Ω, 15V | 20V | 5.5V | 2.7V @ 15V, 60A | 107nC | 310A | 30ns/87ns | 2.7mJ (on), 1.55mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IHW20N135R5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ihw20n135r5xksa1-datasheets-5479.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 288W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 288W | 1.35kV | 1.35kV | 40A | 1350V | 450 ns | 600V, 20A, 10 Ω, 15V | 1.85V @ 15V, 20A | 170nC | 60A | -/235ns | 950μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| STGP10NB37LZ | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgb10nb37lz-datasheets-8413.pdf | 20A | TO-220-3 | Lead Free | 3 | yes | EAR99 | VOLTAGE CLAMPING | No | e3 | Matte Tin (Sn) | 125W | STGP10 | 3 | Single | 125W | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 1.3 μs | 9.2 μs | 20A | SILICON | AUTOMOTIVE IGNITION | N-CHANNEL | TO-220AB | 440V | 1.8V | 860 ns | 1.8V | 20A | 17800 ns | 328V, 10A, 1k Ω, 5V | 2.4V | 1.8V @ 4.5V, 10A | 28nC | 40A | 1.3μs/8μs | 2.4mJ (on), 5mJ (off) | ||||||||||||||||||||||||||||||||||||
| STGF10NC60KD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgd10nc60kt4-datasheets-5424.pdf | 600V | 9A | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 25W | STGF10 | 3 | Single | 25W | 1 | Insulated Gate BIP Transistors | 6 ns | 6ns | 6.5 ns | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | TO-220AB | 22 ns | 600V | 2V | 23 ns | 600V | 9A | 242 ns | 390V, 5A, 10 Ω, 15V | 20V | 7V | 2.5V @ 15V, 5A | 19nC | 30A | 17ns/72ns | 55μJ (on), 85μJ (off) | ||||||||||||||||||||||||||||
| IHW50N65R5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-ihw50n65r5xksa1-datasheets-5335.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | 282W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 282W | 95 ns | 650V | 51 ns | 650V | 80A | 261 ns | 400V, 25A, 8 Ω, 15V | 1.7V @ 15V, 50A | 230nC | 150A | 26ns/220ns | 740μJ (on), 180μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| IKW25N120T2FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikw25n120t2fksa1-datasheets-5340.pdf | TO-247-3 | 3 | 26 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 349W | TO-247AD | 195ns | 49 ns | 1200V | 50A | 504 ns | 600V, 25A, 16.4 Ω, 15V | 2.2V @ 15V, 25A | Trench | 120nC | 100A | 27ns/265ns | 2.9mJ | ||||||||||||||||||||||||||||||||||||||||
| IKW50N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-ikw50n60h3fksa1-datasheets-5343.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | 333W | 3 | Single | 1 | SILICON | POWER CONTROL | N-CHANNEL | 333W | 130 ns | 600V | 54 ns | 600V | 100A | 297 ns | 400V, 50A, 7 Ω, 15V | 2.3V @ 15V, 50A | Trench Field Stop | 315nC | 200A | 23ns/235ns | 2.36mJ | ||||||||||||||||||||||||||||||||||||||||||
| FGH40T120SMD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-fgh40t120smdf155-datasheets-5349.pdf | TO-247-3 | 24.75mm | Lead Free | 5 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | Tin | No | 555W | Single | 555W | Insulated Gate BIP Transistors | 175°C | 40 ns | 475 ns | N-CHANNEL | 80A | 65 ns | 1.2kV | 1.8V | 1.2kV | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 25V | 7.5V | 2.4V @ 15V, 40A | Trench Field Stop | 370nC | 160A | 40ns/475ns | 2.7mJ (on), 1.1mJ (off) | ||||||||||||||||||||||||||||||||||||||||
| IRG7PH35UDPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/infineontechnologies-irg7ph35udpbf-datasheets-5357.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | 180W | Single | 180W | 1 | Insulated Gate BIP Transistors | 30 ns | 160 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AC | 105 ns | 1.2kV | 1.9V | 45 ns | 2.2V | 50A | 1200V | 400 ns | 600V, 20A, 10 Ω, 15V | 6V | 2.2V @ 15V, 20A | Trench | 85nC | 60A | 30ns/160ns | 1.06mJ (on), 620μJ (off) | |||||||||||||||||||||||||||||||||||
| SGL160N60UFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-sgl160n60ufdtu-datasheets-5364.pdf | 600V | 80A | TO-264-3, TO-264AA | 20mm | 26mm | 5mm | Lead Free | 3 | 6.756g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 10 hours ago) | yes | EAR99 | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | No | 8541.29.00.95 | e3 | Tin (Sn) | 250W | Single | 250W | 1 | 40 ns | 90 ns | SILICON | MOTOR CONTROL | N-CHANNEL | 95 ns | 600V | 2.1V | 150 ns | 600V | 160A | 262 ns | 300V, 80A, 3.9 Ω, 15V | 2.6V @ 15V, 80A | 345nC | 300A | 40ns/90ns | 2.5mJ (on), 1.76mJ (off) | |||||||||||||||||||||||||||||||||
| SGL50N60RUFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/onsemiconductor-sgl50n60rufdtu-datasheets-5372.pdf | 100V | 40A | TO-264-3, TO-264AA | 20mm | 26mm | 5mm | Lead Free | 3 | 5 Weeks | 6.756g | No SVHC | 3 | ACTIVE (Last Updated: 11 hours ago) | yes | EAR99 | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | Tin | No | 8541.29.00.95 | e3 | 250W | Single | 250W | 1 | Insulated Gate BIP Transistors | 26 ns | 66 ns | SILICON | MOTOR CONTROL | N-CHANNEL | 80A | 100ns | 600V | 2.2V | 119 ns | 600V | 80A | 329 ns | 300V, 50A, 5.9 Ω, 15V | 20V | 8V | 2.8V @ 15V, 50A | 145nC | 150A | 26ns/66ns | 1.68mJ (on), 1.03mJ (off) | 160ns | |||||||||||||||||||||||||||
| STGW40H120DF2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw40h120df2-datasheets-5378.pdf | TO-247-3 | Lead Free | 32 Weeks | 38.000013g | ACTIVE (Last Updated: 7 months ago) | EAR99 | 468W | STGW40 | Single | 468W | 488 ns | 1.2kV | 2.1V | 1.2kV | 80A | 1200V | 600V, 40A, 10 Ω, 15V | 2.6V @ 15V, 40A | Trench Field Stop | 187nC | 160A | 18ns/152ns | 1mJ (on), 1.32mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH36N60B3C1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgh36n60b3c1-datasheets-5381.pdf | TO-247-3 | 3 | 30 Weeks | No SVHC | 3 | yes | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | IXG*36N60 | 3 | Single | 250W | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 1.5V | 47 ns | 600V | 75A | 350 ns | 400V, 30A, 5 Ω, 15V | 20V | 5V | 1.8V @ 15V, 30A | PT | 80nC | 200A | 20ns/125ns | 390μJ (on), 800μJ (off) | 160ns | |||||||||||||||||||||||||||||||||||
| IKW50N60TFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/infineontechnologies-ikw50n60tfksa1-datasheets-5384.pdf | TO-247-3 | 3 | 26 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 333W | TO-247AC | 143ns | 60 ns | 600V | 80A | 396 ns | 400V, 50A, 7 Ω, 15V | 2V @ 15V, 50A | Trench Field Stop | 310nC | 150A | 26ns/299ns | 2.6mJ | ||||||||||||||||||||||||||||||||||||||||
| FGH75T65SHD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-fgh75t65shdf155-datasheets-5389.pdf | TO-247-3 | 3 | 4 Weeks | 6.39g | ACTIVE (Last Updated: 1 week ago) | EAR99 | not_compliant | 8541.29.00.95 | 455W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 455W | TO-247AB | 43.4 ns | 650V | 84.8 ns | 2.1V | 150A | 100 ns | 400V, 75A, 3 Ω, 15V | 2.1V @ 15V, 75A | Trench Field Stop | 123nC | 225A | 28ns/80ns | 2.4mJ (on), 720μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| FGH30S150P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | TO-247-3 | 3 | 4 Weeks | 6.39g | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 500W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 500W | TO-247AB | 1.5kV | 372 ns | 2.4V | 60A | 1500V | 1080 ns | 600V, 30A, 10 Ω, 15V | 2.4V @ 15V, 30A | 369nC | 90A | 32ns/492ns | 1.16mJ (on), 900μJ (off) | |||||||||||||||||||||||||||||||||||||||
| IXYH24N90C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/ixys-ixyh24n90c3d1-datasheets-5403.pdf | TO-247-3 | 3 | 8 Weeks | 38.000013g | AVALANCHE RATED | 200W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 200W | TO-247AD | 340 ns | 900V | 2.7V | 60 ns | 2.7V | 44A | 215 ns | 450V, 24A, 10 Ω, 15V | 20V | 6V | 2.7V @ 15V, 24A | 40nC | 105A | 20ns/73ns | 1.35mJ (on), 400μJ (off) | |||||||||||||||||||||||||||||||||||||||||
| NGTB40N120L3WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | Standard | ROHS3 Compliant | 2009 | /files/onsemiconductor-ngtb40n120l3wg-datasheets-5243.pdf | TO-247-3 | Lead Free | 18 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 454W | 454W | 86 ns | 1.2kV | 1.55V | 2V | 160A | 1200V | 600V, 40A, 10 Ω, 15V | 2V @ 15V, 40A | Trench Field Stop | 220nC | 18ns/150ns | 1.5mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW35HF60W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw35hf60w-datasheets-5248.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 6.500007g | EAR99 | LOW CONDUCTION LOSS | No | e3 | Tin (Sn) | 200W | STGW35 | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 30 ns | 175 ns | SILICON | POWER CONTROL | N-CHANNEL | 200W | 600V | 2.5V | 45 ns | 600V | 60A | 295 ns | 400V, 20A, 10 Ω, 15V | 20V | 5.75V | 2.5V @ 15V, 20A | 140nC | 150A | 30ns/175ns | 290μJ (on), 185μJ (off) |
