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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQPF70N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf70n10-datasheets-5616.pdf | 100V | 35A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | 23MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 62W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 470ns | 160 ns | 130 ns | 35A | 25V | SILICON | ISOLATED | SWITCHING | 62W Tc | 100V | N-Channel | 3300pF @ 25V | 23m Ω @ 17.5A, 10V | 4V @ 250μA | 35A Tc | 110nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||
| IRFBC40ASTRLPBF | Vishay Siliconix | $3.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc40astrlpbf-datasheets-5609.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.036nF | 13 ns | 23ns | 18 ns | 31 ns | 6.2A | 30V | 600V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1036pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 42nC @ 10V | 1.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHH26N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh26n60et1ge3-datasheets-5628.pdf | 8-PowerTDFN | Lead Free | 4 | 14 Weeks | Unknown | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 202W Tc | 50A | 0.135Ohm | 353 mJ | N-Channel | 2815pF @ 100V | 135m Ω @ 13A, 10V | 4V @ 250μA | 25A Tc | 116nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| R6007JNXC7G | ROHM Semiconductor | $2.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6007jnxc7g-datasheets-5632.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 46W Tc | TO-220AB | 7A | 21A | 0.78Ohm | 132 mJ | N-Channel | 475pF @ 100V | 780m Ω @ 3.5A, 15V | 7V @ 1mA | 7A Tc | 17.5nC @ 15V | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| STB14NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb14nm65n-datasheets-5634.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB14N | 4 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 13ns | 20 ns | 55 ns | 12A | 25V | SILICON | SWITCHING | 125W Tc | 48A | 650V | N-Channel | 1300pF @ 50V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| FCPF7N60NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcpf7n60nt-datasheets-5552.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 12 Weeks | 2.27g | No SVHC | 600MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 30.5W | 1 | FET General Purpose Power | 12 ns | 6ns | 12 ns | 35 ns | 6.8A | 30V | SILICON | ISOLATED | SWITCHING | 2V | 30.5W Tc | TO-220AB | 20.4A | 79.4 mJ | 600V | N-Channel | 960pF @ 100V | 520m Ω @ 3.4A, 10V | 4V @ 250μA | 6.8A Tc | 35.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| STU10NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu10nm60n-datasheets-5644.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | 3 | 26 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | 260 | STU10N | 3 | 30 | 70W | 1 | FET General Purpose Power | 10 ns | 12ns | 15 ns | 32 ns | 10A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 3V | 70W Tc | 8A | 0.55Ohm | 200 mJ | N-Channel | 540pF @ 50V | 550m Ω @ 4A, 10V | 4V @ 250μA | 10A Tc | 19nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||
| STF9NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp9nm60n-datasheets-3068.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 745MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF9 | 3 | Single | 25W | 1 | FET General Purpose Power | 28 ns | 23ns | 26.7 ns | 52.5 ns | 6.5A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 25W Tc | TO-220AB | 9A | 26A | 600V | N-Channel | 452pF @ 50V | 745m Ω @ 3.25A, 10V | 4V @ 250μA | 6.5A Tc | 17.4nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| IRF8301MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf8301mtrpbf-datasheets-4496.pdf | DirectFET™ Isometric MT | Lead Free | 3 | 12 Weeks | No SVHC | 7 | EAR99 | ULTRA LOW RESISTANCE | No | BOTTOM | 1 | Single | 2.8W | 1 | FET General Purpose Power | R-XBCC-N3 | 20 ns | 30ns | 17 ns | 25 ns | 34A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 2.8W Ta 89W Tc | 250A | 260 mJ | 30V | N-Channel | 6140pF @ 15V | 1.5m Ω @ 32A, 10V | 2.35V @ 150μA | 34A Ta 192A Tc | 77nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STFI10NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-262-3 Full Pack, I2Pak | 3 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STFI10N | 3 | 35W | 1 | FET General Purpose Power | 20 ns | 20ns | 30 ns | 55 ns | 10A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 35W Tc | 0.75Ohm | 600V | N-Channel | 1370pF @ 25V | 750m Ω @ 4.5A, 10V | 4.5V @ 250μA | 10A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STB100NF03L-03T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb100nf03l03t4-datasheets-7676.pdf | 30V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | No SVHC | 3.2MOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB100N | 4 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 35 ns | 315ns | 95 ns | 115 ns | 100A | 16V | SILICON | DRAIN | SWITCHING | 1.7V | 300W Tc | 400A | 30V | N-Channel | 6200pF @ 25V | 1.7 V | 3.2m Ω @ 50A, 10V | 2.5V @ 250μA | 100A Tc | 88nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
| IXTA180N10T-TRL | IXYS | $4.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Trench™ | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 100V | 480W Tc | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI15NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi15nm65n-datasheets-5602.pdf | TO-262-3 Full Pack, I2Pak | 3 | EAR99 | No | STFI15N | 1 | Single | 55.5 ns | 8.5ns | 11.4 ns | 14 ns | 12A | 25V | 30W Tc | 650V | N-Channel | 983pF @ 50V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 33.3nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK28V65W,LQ | Toshiba Semiconductor and Storage | $6.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMTS0D7N04CLTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmts0d7n04cltxg-datasheets-5607.pdf | 8-PowerTDFN | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD240N60E-GE3 | Vishay Siliconix | $2.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd240n60ege3-datasheets-5613.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 600V | 78W Tc | N-Channel | 783pF @ 100V | 240mOhm @ 5.5A, 10V | 5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK099V65Z,LQ | Toshiba Semiconductor and Storage | $3.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 4-VSFN Exposed Pad | 16 Weeks | 650V | 230W Tc | N-Channel | 2780pF @ 300V | 99m Ω @ 15A, 10V | 4V @ 1.27mA | 30A Ta | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL0330N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl0330n80-datasheets-5399.pdf | 8-PowerSFN | 8 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Single | 220A | 80V | 300W Tc | N-Channel | 6320pF @ 40V | 3m Ω @ 80A, 10V | 4V @ 250μA | 220A Tc | 112nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH11N60EF-T1-GE3 | Vishay Siliconix | $8.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh11n60eft1ge3-datasheets-5388.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 11A | 600V | 4V | 114W Tc | N-Channel | 1078pF @ 100V | 357m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 62nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVBLS0D7N04M8TXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvbls0d7n04m8txg-datasheets-5537.pdf | 8-PowerSFN | yes | 40V | 357W Tj | N-Channel | 12000pF @ 25V | 0.75m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 188nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI9N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi9n80k5-datasheets-5540.pdf | TO-262-3 Full Pack, I2Pak | EAR99 | NOT SPECIFIED | STFI9 | NOT SPECIFIED | 7A | 800V | 25W Tc | N-Channel | 340pF @ 100V | 900m Ω @ 3.5A, 10V | 5V @ 100μA | 7A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI6N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu6n62k3-datasheets-2052.pdf | TO-262-3 Full Pack, I2Pak | 3 | EAR99 | No | STFI6N | Single | 30W | 22 ns | 12ns | 20 ns | 49 ns | 5.5A | 30V | 30W Tc | 620V | N-Channel | 875pF @ 50V | 1.2 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.5A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD113PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irfd113pbf-datasheets-5477.pdf | 4-DIP (0.300, 7.62mm) | 2 | 8 Weeks | 4 | EAR99 | No | DUAL | 2 | 1 | 1 | FET General Purpose Power | R-PDIP-T2 | 10 ns | 15ns | 10 ns | 15 ns | 800mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1W Tc | 0.8A | 0.8Ohm | 25 pF | N-Channel | 200pF @ 25V | 800m Ω @ 800mA, 10V | 4V @ 250μA | 800mA Tc | 7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIHH11N65EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihh11n65eft1ge3-datasheets-5480.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 11A | 650V | 130W Tc | N-Channel | 1243pF @ 100V | 382m Ω @ 6A, 10V | 4V @ 250μA | 11A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU150N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std150n3llh6-datasheets-9742.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | 3 | No SVHC | 3 | EAR99 | No | STU150 | 3 | Single | 110W | 1 | FET General Purpose Power | 17 ns | 18ns | 46 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 1V | 110W Tc | 0.0049Ohm | 525 mJ | 30V | N-Channel | 4040pF @ 25V | 3.3m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 40nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFDC20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfdc20pbf-datasheets-5489.pdf | 600V | 320mA | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 4.4Ohm | 4 | No | Single | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 350pF | 10 ns | 23ns | 23 ns | 30 ns | 320mA | 20V | 600V | 4V | 1W Ta | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 10 V | 4.4Ohm @ 190mA, 10V | 4V @ 250μA | 320mA Ta | 18nC @ 10V | 4.4 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STFI13N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi13n65m2-datasheets-5496.pdf | TO-262-3 Full Pack, I2Pak | 3 | EAR99 | SINGLE | NOT SPECIFIED | STFI13N | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 25W Tc | TO-281 | 40A | 0.43Ohm | 350 mJ | N-Channel | 590pF @ 100V | 430m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| SUM70030E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum70030ege3-datasheets-5466.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 375W Tc | N-Channel | 10870pF @ 50V | 2.88m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 214nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI8N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi8n80k5-datasheets-5500.pdf | TO-262-3 Full Pack, I2Pak | 10.4mm | 10.85mm | 4.6mm | 3 | EAR99 | No | STFI8 | Single | FET General Purpose Power | 12 ns | 14ns | 20 ns | 32 ns | 6A | 30V | 800V | 25W Tc | 6A | N-Channel | 450pF @ 100V | 950m Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 16.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS9N60ATRRPBF | Vishay Siliconix | $2.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | 170W | 1 | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 170W Tc | 750mOhm | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V |
