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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STFI10N65K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi10n65k3-datasheets-5768.pdf | TO-262-3 Full Pack, I2Pak | 3 | EAR99 | No | STFI10N | Single | 35W | 14.5 ns | 14ns | 35 ns | 44 ns | 10A | 30V | 35W Tc | 650V | N-Channel | 1180pF @ 25V | 1 Ω @ 3.6A, 10V | 4.5V @ 100μA | 10A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK17A65W,S5X | Toshiba Semiconductor and Storage | $2.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP125N65S3R0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcp125n65s3r0-datasheets-5771.pdf | TO-220-3 | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | 650V | 181W Tc | N-Channel | 1940pF @ 400V | 125m Ω @ 12A, 10V | 4.5V @ 2.4mA | 24A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB80NF55L-08-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb80nf55l081-datasheets-7738.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | STB80N | 3 | Single | 300W | 1 | FET General Purpose Power | 35 ns | 145ns | 65 ns | 85 ns | 80A | 16V | SILICON | SWITCHING | 300W Tc | 870 mJ | 55V | N-Channel | 4350pF @ 25V | 8m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 100nC @ 4.5V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| STP13NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf13nm60nd-datasheets-4100.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | 380mOhm | 3 | EAR99 | No | STP13N | Single | 1 | 46.5 ns | 10ns | 15.4 ns | 9.6 ns | 11A | 25V | SILICON | DRAIN | SWITCHING | 600V | 600V | 109W Tc | TO-220AB | 44A | 162 mJ | N-Channel | 845pF @ 50V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 24.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STU16N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu16n60m2-datasheets-5788.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 26 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | STU16N | FET General Purpose Power | 12A | Single | 600V | 110W Tc | N-Channel | 700pF @ 100V | 320m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB20NM60D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb20nm60d-datasheets-5792.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 26 Weeks | 290mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | GULL WING | 245 | STB20N | 3 | Single | 30 | 192W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 12ns | 22 ns | 20A | 30V | SILICON | SWITCHING | 192W Tc | 80A | 700 mJ | 600V | N-Channel | 1300pF @ 25V | 290m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRFZ48SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfz48spbf-datasheets-5795.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | 3 | No | D2PAK | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | 60V | 3.7W Ta 190W Tc | N-Channel | 2400pF @ 25V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS08N003C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs08n003c-datasheets-5802.pdf | 8-PowerTDFN | 20 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 2.7W Ta 125W Tc | N-Channel | 5350pF @ 40V | 3.1m Ω @ 56A, 10V | 4V @ 310μA | 22A Ta 147A Tc | 73nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70090E-GE3 | Vishay Siliconix | $2.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70090ege3-datasheets-5818.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 125W Tc | TO-220AB | 120A | 0.0089Ohm | 80 mJ | N-Channel | 1950pF @ 50V | 8.9m Ω @ 20A, 10V | 4V @ 250μA | 50A Tc | 50nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHP25N40D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp25n40dge3-datasheets-3763.pdf | TO-220-3 | 3 | 13 Weeks | 3 | AVALANCHE RATED | No | SINGLE | 3 | 1 | FET General Purpose Power | 21 ns | 57ns | 37 ns | 40 ns | 25A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 278W Tc | TO-220AB | 78A | 0.17Ohm | 556 mJ | N-Channel | 1707pF @ 100V | 170m Ω @ 13A, 10V | 5V @ 250μA | 25A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| RCX330N25 | ROHM Semiconductor | $4.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | 10.3mm | 15.4mm | 4.8mm | 3 | 16 Weeks | 3 | EAR99 | No | 3 | Single | 40W | 1 | 4.5nF | 50 ns | 200ns | 140 ns | 120 ns | 33A | 30V | SILICON | ISOLATED | SWITCHING | 2.23W Ta 40W Tc | TO-220AB | 77mOhm | 74.8 mJ | 250V | N-Channel | 33A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SUP60030E-GE3 | Vishay Siliconix | $2.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60030ege3-datasheets-5853.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 375W Tc | TO-220AB | 250A | 0.0034Ohm | 245 mJ | N-Channel | 7910pF @ 40V | 3.4m Ω @ 30A, 10V | 4V @ 250μA | 120A Tc | 141nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STP5NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp5nk60z-datasheets-5866.pdf | 600V | 5A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.6Ohm | 3 | EAR99 | No | e3 | Tin (Sn) | STP5N | 3 | Single | 90W | 1 | FET General Purpose Power | 16 ns | 25ns | 25 ns | 36 ns | 5A | 30V | SILICON | SWITCHING | 3.75V | 90W Tc | TO-220AB | 5A | 20A | 220 mJ | 600V | N-Channel | 690pF @ 25V | 1.6 Ω @ 2.5A, 10V | 4.5V @ 50μA | 5A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDA16N50LDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fda16n50ldtu-datasheets-5647.pdf | TO-3P-3, SC-65-3 (Formed Leads) | 4 Weeks | 6.401g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | FET General Purpose Power | 500V | 205W Tc | 16.5A | N-Channel | 1945pF @ 25V | 380m Ω @ 8.3A, 10V | 5V @ 250μA | 16.5A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQV120N10-3M8_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqv120n103m8ge3-datasheets-5652.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 250W Tc | 120A | 480A | 0.0038Ohm | 266 mJ | N-Channel | 7230pF @ 25V | 3.8m Ω @ 20A, 10V | 3.5V @ 250μA | 120A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STI150N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-sti150n10f7-datasheets-5663.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 13 Weeks | 2.084002g | 3.6mOhm | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STI150N | 1 | Single | NOT SPECIFIED | 33 ns | 57ns | 33 ns | 72 ns | 110A | 20V | 100V | 250W Tc | N-Channel | 8115pF @ 50V | 4.2m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 117nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC20GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfibc20gpbf-datasheets-5671.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 30W | 1 | FET General Purpose Power | 10 ns | 23ns | 25 ns | 30 ns | 1.7A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 30W Tc | TO-220AB | 6.8A | 84 mJ | N-Channel | 350pF @ 25V | 4.4 Ω @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| FDP060AN08A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdp060an08a0-datasheets-5677.pdf | 75V | 80A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 6MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 255W | 1 | FET General Purpose Power | 19 ns | 79ns | 38 ns | 37 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 4V | 255W Tc | TO-220AB | 75V | N-Channel | 5150pF @ 25V | 6m Ω @ 80A, 10V | 4V @ 250μA | 16A Ta 80A Tc | 95nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIHD180N60E-GE3 | Vishay Siliconix | $2.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihd180n60ege3-datasheets-5686.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 600V | 156W Tc | N-Channel | 1080pF @ 100V | 195mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB16N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb16n65m5-datasheets-5342.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | No SVHC | 279mOhm | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB16N | 4 | Single | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 7ns | 8 ns | 6 ns | 12A | 25V | SILICON | DRAIN | SWITCHING | 4V | 90W Tc | 48A | 200 mJ | 650V | N-Channel | 1250pF @ 100V | 299m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 31nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| STP11N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp11n52k3-datasheets-5690.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 410mOhm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | STP11N | 3 | Single | 125W | 1 | 7 ns | 18ns | 42 ns | 281 ns | 10A | 30V | SILICON | SWITCHING | 3.75V | 125W Tc | TO-220AB | 40A | 170 mJ | 525V | N-Channel | 1400pF @ 50V | 510m Ω @ 5A, 10V | 4.5V @ 50μA | 10A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IPB180N08S402ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb180n08s402atma1-datasheets-5692.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | 7 | yes | EAR99 | ULTRA LOW RESISTANCE | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 30 ns | 15ns | 50 ns | 180A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 277W Tc | 0.0022Ohm | 640 mJ | N-Channel | 11550pF @ 25V | 2.2m Ω @ 100A, 10V | 4V @ 220μA | 180A Tc | 167nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STFI12N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-262-3 Full Pack, I2Pak | EAR99 | NOT SPECIFIED | STFI12N | NOT SPECIFIED | 9A | 600V | 25W Tc | N-Channel | 538pF @ 100V | 450m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 16nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPDD60R102G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-ipdd60r102g7xtma1-datasheets-5636.pdf | 10-PowerSOP Module | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 139W Tc | N-Channel | 1320pF @ 400V | 102m Ω @ 7.8A, 10V | 4V @ 390μA | 23A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA76P10T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 100V | 298W Tc | P-Channel | 13700pF @ 25V | 25m Ω @ 38A, 10V | 4V @ 250μA | 76A Tc | 197nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP6410ANG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntp6410ang-datasheets-5723.pdf | TO-220-3 | 10.28mm | 4.82mm | 15.75mm | Lead Free | 3 | 9 Weeks | 4.535924g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 188W | 1 | FET General Purpose Power | 17 ns | 170ns | 190 ns | 120 ns | 76A | 20V | SILICON | DRAIN | 188W Tc | TO-220AB | 500 mJ | 100V | N-Channel | 4500pF @ 25V | 4 V | 13m Ω @ 76A, 10V | 4V @ 250μA | 76A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPB032N10N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb032n10n5atma1-datasheets-5731.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 6 | 13 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 187W Tc | 166A | 664A | 0.0032Ohm | 233 mJ | N-Channel | 6970pF @ 50V | 3.2m Ω @ 83A, 10V | 3.8V @ 125μA | 166A Tc | 95nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STFI7N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi7n80k5-datasheets-5740.pdf | TO-262-3 Full Pack, I2Pak | 10.4mm | 10.85mm | 4.6mm | Lead Free | 2.240009g | 3 | EAR99 | NOT SPECIFIED | STFI7 | 1 | Single | NOT SPECIFIED | 11.3 ns | 8.3ns | 20.2 ns | 23.7 ns | 6A | 30V | 25W Tc | 800V | N-Channel | 360pF @ 100V | 1.2 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 13.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF7N60NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcpf7n60nt-datasheets-5552.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 12 Weeks | 2.27g | No SVHC | 600MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 30.5W | 1 | FET General Purpose Power | 12 ns | 6ns | 12 ns | 35 ns | 6.8A | 30V | SILICON | ISOLATED | SWITCHING | 2V | 30.5W Tc | TO-220AB | 20.4A | 79.4 mJ | 600V | N-Channel | 960pF @ 100V | 520m Ω @ 3.4A, 10V | 4V @ 250μA | 6.8A Tc | 35.6nC @ 10V | 10V | ±30V |
