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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FCH125N65S3R0-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fch125n65s3r0f155-datasheets-6225.pdf | TO-247-3 | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | 650V | 181W Tc | N-Channel | 1940pF @ 400V | 125m Ω @ 12A, 10V | 4.5V @ 2.4mA | 24A Tc | 46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH26N60EF-T1-GE3 | Vishay Siliconix | $53.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh26n60eft1ge3-datasheets-6167.pdf | 8-PowerTDFN | 4 | 14 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 202W Tc | 67A | 0.141Ohm | 353 mJ | N-Channel | 2744pF @ 100V | 141m Ω @ 13A, 10V | 4V @ 250μA | 24A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TK22A65X,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP50010E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup50010ege3-datasheets-6169.pdf | TO-220-3 | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 375W Tc | N-Channel | 10895pF @ 30V | 2m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 212nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP380N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fcpf380n60-datasheets-5323.pdf | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | 3 | 12 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 31W | 1 | FET General Purpose Power | 14 ns | 7ns | 6 ns | 45 ns | 10.2A | 20V | SILICON | SWITCHING | 600V | 2.5V | 106W Tc | TO-220AB | 650V | N-Channel | 1665pF @ 25V | 380m Ω @ 5A, 10V | 3.5V @ 250μA | 10.2A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| STFI13N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi13n60m2-datasheets-6173.pdf | TO-262-3 Full Pack, I2Pak | 10.4mm | 10.8mm | 4.6mm | 3 | EAR99 | No | STFI13N | 1 | Single | 11 ns | 10ns | 9.5 ns | 41 ns | 11A | 25V | 600V | 25W Tc | N-Channel | 580pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP17NK40ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp17nk40zfp-datasheets-6176.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STP17N | 3 | Single | 35W | 1 | FET General Purpose Power | 25 ns | 23ns | 13 ns | 55 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 35W Tc | 60A | 0.25Ohm | 450 mJ | 400V | N-Channel | 1900pF @ 25V | 250m Ω @ 7.5A, 10V | 4.5V @ 100μA | 15A Tc | 65nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| STFU28N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfu28n65m2-datasheets-6180.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | ACTIVE (Last Updated: 2 weeks ago) | EAR99 | NOT SPECIFIED | STFU2 | NOT SPECIFIED | 20A | 650V | 30W Tc | N-Channel | 1440pF @ 100V | 180m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF18N55M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf18n55m5-datasheets-6067.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | No SVHC | 240MOhm | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | STF18 | 3 | Single | 25W | 1 | FET General Purpose Power | 9.5ns | 13 ns | 29 ns | 13A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 25W Tc | TO-220AB | 52A | 200 mJ | 550V | N-Channel | 1260pF @ 100V | 192m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 31nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||
| FDMT800120DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmt800120dc-datasheets-6033.pdf | 8-PowerVDFN | 20 Weeks | 248.52072mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 29 ns | 18ns | 9.5 ns | 40 ns | 129A | 20V | 120V | 3.2W Ta 156W Tc | N-Channel | 7850pF @ 60V | 4.14m Ω @ 20A, 10V | 4V @ 250μA | 20A Ta 129A Tc | 107nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FCP13N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fcpf13n60nt-datasheets-6023.pdf | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | 3 | 14 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 116W | 1 | FET General Purpose Power | 14.5 ns | 10.6ns | 9.8 ns | 45 ns | 13A | 30V | SILICON | SWITCHING | 2V | 116W Tc | TO-220AB | 0.258Ohm | 600V | N-Channel | 1765pF @ 100V | 258m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 39.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| STFI15N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-262-3 Full Pack, I2Pak | STFI15N | 950V | 30W | N-Channel | 855pF @ 10V | 500m Ω @ 5.5A, 10V | 5V @ 100μA | 7.5A Ta | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT60R080G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipt60r080g7xtma1-datasheets-6095.pdf | 8-PowerSFN | 2.4mm | 3 | 18 Weeks | yes | EAR99 | PG-HSOF-8 | e3 | Tin (Sn) | YES | SINGLE | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 167W | 1 | 150°C | R-PSSO-F3 | 19 ns | 61 ns | 29A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 167W Tc | 83A | 0.08Ohm | 97 mJ | 600V | N-Channel | 1640pF @ 400V | 80m Ω @ 9.7A, 10V | 4V @ 490μA | 29A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| STP14NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp14nk50zfp-datasheets-4082.pdf | 500V | 14A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 340mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STP14N | 3 | Single | 150W | 1 | FET General Purpose Power | 24 ns | 16ns | 12 ns | 54 ns | 6A | 30V | SILICON | SWITCHING | 150W Tc | TO-220AB | 48A | 400 mJ | 500V | N-Channel | 2000pF @ 25V | 3.75 V | 380m Ω @ 6A, 10V | 4.5V @ 100μA | 14A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| SIHH14N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh14n65et1ge3-datasheets-5720.pdf | 8-PowerTDFN | 4 | 18 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 4V | 156W Tc | 0.26Ohm | 226 mJ | N-Channel | 1712pF @ 100V | 260m Ω @ 7A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STP15NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfi15nm65n-datasheets-5602.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 350mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STP15N | 3 | Single | 125W | 1 | FET General Purpose Power | 55.5 ns | 8ns | 26 ns | 14 ns | 12A | 25V | SILICON | SWITCHING | 3V | 125W Tc | TO-220AB | 48A | 650V | N-Channel | 983pF @ 50V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 33.3nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||
| FCP290N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcp290n80-datasheets-6116.pdf | TO-220-3 | 12 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 17A | 800V | 4.5V | 212W Tc | N-Channel | 3205pF @ 100V | 290m Ω @ 8.5A, 10V | 4.5V @ 1.7mA | 17A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FCH165N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch165n60e-datasheets-7862.pdf | TO-247-3 | 12 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 23A | 600V | 3.5V | 227W Tc | N-Channel | 2434pF @ 380V | 165m Ω @ 11.5A, 10V | 3.5V @ 250μA | 23A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STI16N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti16n65m5-datasheets-6148.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | No SVHC | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | SINGLE | STI16N | 3 | 25W | 1 | FET General Purpose Power | 25 ns | 7ns | 8 ns | 6 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 90W Tc | 48A | 0.279Ohm | 200 mJ | 650V | N-Channel | 1250pF @ 100V | 279m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 31nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||
| STFI15N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi15n65m5-datasheets-6158.pdf | TO-262-3 Full Pack, I2Pak | 10.4mm | 10.85mm | 4.6mm | Lead Free | 3 | 3 | EAR99 | No | STFI15N | Single | 1 | 30 ns | 8ns | 11 ns | 12.5 ns | 11A | 25V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-281 | 44A | 160 mJ | 650V | N-Channel | 816pF @ 100V | 340m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 22nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| SIHP180N60E-GE3 | Vishay Siliconix | $2.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp180n60ege3-datasheets-6043.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 156W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVB082N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvb082n65s3f-datasheets-6046.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 313W Tc | N-Channel | 3410pF @ 400V | 82m Ω @ 20A, 10V | 5V @ 4mA | 40A Tc | 81nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHL190N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nthl190n65s3hf-datasheets-6049.pdf | TO-247-3 | 12 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 162W Tc | N-Channel | 1610pF @ 400V | 190m Ω @ 10A, 10V | 5V @ 430μA | 20A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH21N65EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh21n65eft1ge3-datasheets-6054.pdf | 8-PowerTDFN | 4 | 21 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 19.8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 4V | 156W Tc | 53A | 353 mJ | N-Channel | 2396pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 19.8A Tc | 102nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| AOT66916L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 18 Weeks | 100V | 8.3W Ta 277W Tc | N-Channel | 6180pF @ 50V | 3.6m Ω @ 20A, 10V | 3.5V @ 250μA | 35.5A Ta 120A Tc | 78nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70030E-GE3 | Vishay Siliconix | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70030ege3-datasheets-5987.pdf | TO-220-3 | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 375W Tc | N-Channel | 10870pF @ 50V | 3.18m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 214nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI26N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf26n60m2-datasheets-3909.pdf | TO-262-3 Full Pack, I2Pak | EAR99 | NOT SPECIFIED | STFI26N | NOT SPECIFIED | 20A | 600V | 30W Tc | N-Channel | 165m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA180N60E-GE3 | Vishay Siliconix | $2.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha180n60ege3-datasheets-5993.pdf | TO-220-3 Full Pack | 14 Weeks | TO-220 Full Pack | 600V | 33W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120N06-3M5L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp120n063m5lge3-datasheets-5995.pdf | TO-220-3 | 12 Weeks | TO-220AB | 60V | 250W Tc | N-Channel | 14700pF @ 25V | 3.5mOhm @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 330nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp15n65ege3-datasheets-5997.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 34W | 1 | 24ns | 25 ns | 48 ns | 15A | 4V | SILICON | SWITCHING | 34W Tc | TO-220AB | 0.28Ohm | 286 mJ | 650V | N-Channel | 1640pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V |
