Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FCP150N65F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fcp150n65f-datasheets-6015.pdf | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | 12 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 28 ns | 15ns | 6 ns | 73 ns | 24A | 20V | 298W Tc | 650V | N-Channel | 3737pF @ 100V | 150m Ω @ 12A, 10V | 5V @ 2.4mA | 24A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHG14N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg14n50dge3-datasheets-5961.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 3 | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 16 ns | 27ns | 26 ns | 29 ns | 14A | 30V | 100V | SILICON | DRAIN | SWITCHING | 3V | 208W Tc | TO-247AC | 0.4Ohm | 56 mJ | 500V | N-Channel | 1144pF @ 100V | 400m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| FCPF13N60NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fcpf13n60nt-datasheets-6023.pdf | TO-220-3 Full Pack | 10.16mm | 15.9mm | 4.7mm | 3 | 12 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 33.8W | 1 | FET General Purpose Power | 14.5 ns | 10.6ns | 9.8 ns | 45 ns | 13A | 30V | SILICON | ISOLATED | SWITCHING | 2V | 33.8W Tc | TO-220AB | 0.258Ohm | 600V | N-Channel | 1765pF @ 100V | 258m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 39.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| FDP023N08B-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp023n08bf102-datasheets-5967.pdf | TO-220-3 | 17 Weeks | 2.346g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | No | Single | 245W | 1 | FET General Purpose Power | 41 ns | 71ns | 56 ns | 111 ns | 120A | 20V | 245W Tc | 75V | N-Channel | 13765pF @ 37.5V | 2.35m Ω @ 75A, 10V | 3.8V @ 250μA | 120A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120N10-3M8_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp120n103m8ge3-datasheets-5976.pdf | TO-220-3 | 12 Weeks | TO-220AB | 100V | 250W Tc | N-Channel | 7230pF @ 25V | 3.8mOhm @ 20A, 10V | 3.5V @ 250μA | 120A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB15N60E-GE3 | Vishay Siliconix | $4.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb15n60ege3-datasheets-5978.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 280mOhm | 3 | AVALANCHE RATED | No | GULL WING | 4 | 1 | Single | 180W | 1 | FET General Purpose Powers | R-PSSO-G2 | 17 ns | 77ns | 66 ns | 35 ns | 15A | 20V | SILICON | SWITCHING | 2V | 180W Tc | 600V | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTA26P20P-TRL | IXYS | $5.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 200V | 300W Tc | P-Channel | 2740pF @ 25V | 170m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT66916L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 18 Weeks | 100V | 8.3W Ta 277W Tc | N-Channel | 6180pF @ 50V | 3.6m Ω @ 20A, 10V | 3.5V @ 250μA | 35.5A Ta 120A Tc | 78nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70030E-GE3 | Vishay Siliconix | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70030ege3-datasheets-5987.pdf | TO-220-3 | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 375W Tc | N-Channel | 10870pF @ 50V | 3.18m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 214nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI26N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf26n60m2-datasheets-3909.pdf | TO-262-3 Full Pack, I2Pak | EAR99 | NOT SPECIFIED | STFI26N | NOT SPECIFIED | 20A | 600V | 30W Tc | N-Channel | 165m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA180N60E-GE3 | Vishay Siliconix | $2.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha180n60ege3-datasheets-5993.pdf | TO-220-3 Full Pack | 14 Weeks | TO-220 Full Pack | 600V | 33W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu9020pbf-datasheets-5922.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | 3 | 8 Weeks | 329.988449mg | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 42W | 1 | Other Transistors | 8.2 ns | 67ns | 25 ns | 12 ns | 9.9A | 20V | SILICON | DRAIN | SWITCHING | 50V | 42W Tc | 40A | 0.28Ohm | 250 mJ | -50V | P-Channel | 490pF @ 25V | -4 V | 280m Ω @ 5.7A, 10V | 4V @ 250μA | 9.9A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SUP60020E-GE3 | Vishay Siliconix | $2.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60020ege3-datasheets-5926.pdf | TO-220-3 | 14 Weeks | 80V | 375W Tc | N-Channel | 10680pF @ 40V | 2.4m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 227nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK17A65W5,S5X | Toshiba Semiconductor and Storage | $2.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP15N60E-E3 | Vishay Siliconix | $8.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp15n60ee3-datasheets-5933.pdf | TO-220-3 | Lead Free | 19 Weeks | 6.000006g | 280mOhm | 3 | No | 1 | Single | 180W | 1 | TO-220AB | 1.35nF | 17 ns | 51ns | 33 ns | 35 ns | 15A | 20V | 600V | 180W Tc | 280mOhm | N-Channel | 1350pF @ 100V | 280mOhm @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 280 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDA70N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fda70n20-datasheets-5941.pdf | 200V | 70A | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 7 Weeks | 6.401g | No SVHC | 35MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 417W | 1 | FET General Purpose Power | 71 ns | 235ns | 39 ns | 65 ns | 70A | 30V | SILICON | SWITCHING | 5V | 417W Tc | 280A | 200V | N-Channel | 3970pF @ 25V | 5 V | 35m Ω @ 35A, 10V | 5V @ 250μA | 70A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IPB65R095C7ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-ipb65r095c7atma2-datasheets-5716.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 128W Tc | N-Channel | 2140pF @ 400V | 95m Ω @ 11.8A, 10V | 4V @ 590μA | 24A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB22NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb22nm60n-datasheets-5956.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | No SVHC | 220mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB22N | 4 | Single | 30 | 125W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 38 ns | 74 ns | 16A | 30V | SILICON | SWITCHING | 3V | 125W Tc | 64A | 600V | N-Channel | 1300pF @ 50V | 220m Ω @ 8A, 10V | 4V @ 100μA | 16A Tc | 44nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRF840LCLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf840lclpbf-datasheets-5874.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 8 Weeks | 2.387001g | No | 1 | Single | 3.1W | 1 | I2PAK | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 3.1W Ta 125W Tc | 850mOhm | N-Channel | 1100pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOTF66616L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 8.3W Ta 30W Tc | N-Channel | 2870pF @ 30V | 3.3m Ω @ 20A, 10V | 3.4V @ 250μA | 38A Ta 72.5A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP9N90C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqp9n90c-datasheets-5881.pdf&product=onsemiconductor-fqp9n90c-6830677 | 900V | 8A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 1.4Ohm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 205W | 1 | FET General Purpose Power | 50 ns | 120ns | 75 ns | 100 ns | 8A | 30V | 900V | SILICON | SWITCHING | 5V | 205W Tc | TO-220AB | 8A | 900 mJ | 900V | N-Channel | 2730pF @ 25V | 5 V | 1.4 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| SIHA25N50E-E3 | Vishay Siliconix | $11.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha25n50ee3-datasheets-5891.pdf | TO-220-3 Full Pack | 18 Weeks | 6.000006g | 145mOhm | 1 | Single | TO-220 Full Pack | 1.98nF | 19 ns | 36ns | 29 ns | 57 ns | 26A | 20V | 500V | 35W Tc | 145mOhm | 500V | N-Channel | 1980pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 145 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| R6009JNXC7G | ROHM Semiconductor | $3.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6009jnxc7g-datasheets-5895.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | LOW ON-RESISTANCE | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 53W Tc | TO-220AB | 9A | 27A | 0.585Ohm | 177 mJ | N-Channel | 645pF @ 100V | 585m Ω @ 4.5A, 15V | 7V @ 1.38mA | 9A Tc | 22nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL0210N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdbl0210n80-datasheets-5735.pdf | 8-PowerSFN | 2 | 8 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | FLAT | 245 | Single | NOT SPECIFIED | 1 | R-PSSO-F2 | 240A | SILICON | DRAIN | SWITCHING | 80V | 357W Tj | MO-299A | 0.002Ohm | 512 mJ | N-Channel | 10000pF @ 40V | 2m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 169nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| CSD19506KTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 1 week ago) | yes | 4.44mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | CSD19506 | Single | NOT SPECIFIED | 1 | 200A | SILICON | DRAIN | SWITCHING | 80V | 80V | 375W Tc | 400A | 0.0028Ohm | 55 pF | N-Channel | 12200pF @ 40V | 2.3m Ω @ 100A, 10V | 3.2V @ 250μA | 200A Ta | 156nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHP23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp23n60ege3-datasheets-5906.pdf | TO-220-3 | 3 | 14 Weeks | 6.000006g | 3 | No | 1 | Single | 1 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 227W Tc | TO-220AB | 650V | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N08S2L07AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp100n08s2l07aksa1-datasheets-5911.pdf | TO-220-3 | Contains Lead | 3 | 10 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 19 ns | 56ns | 22 ns | 85 ns | 100A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 400A | 0.0068Ohm | 810 mJ | N-Channel | 5400pF @ 25V | 6.8m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 246nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTMFS08N003C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs08n003c-datasheets-5802.pdf | 8-PowerTDFN | 20 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 2.7W Ta 125W Tc | N-Channel | 5350pF @ 40V | 3.1m Ω @ 56A, 10V | 4V @ 310μA | 22A Ta 147A Tc | 73nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70090E-GE3 | Vishay Siliconix | $2.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70090ege3-datasheets-5818.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 125W Tc | TO-220AB | 120A | 0.0089Ohm | 80 mJ | N-Channel | 1950pF @ 50V | 8.9m Ω @ 20A, 10V | 4V @ 250μA | 50A Tc | 50nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP25N40D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp25n40dge3-datasheets-3763.pdf | TO-220-3 | 3 | 13 Weeks | 3 | AVALANCHE RATED | No | SINGLE | 3 | 1 | FET General Purpose Power | 21 ns | 57ns | 37 ns | 40 ns | 25A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 278W Tc | TO-220AB | 78A | 0.17Ohm | 556 mJ | N-Channel | 1707pF @ 100V | 170m Ω @ 13A, 10V | 5V @ 250μA | 25A Tc | 88nC @ 10V | 10V | ±30V |
