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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPZA60R180P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipza60r180p7xksa1-datasheets-6350.pdf | TO-247-4 | 4 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 72W Tc | 53A | 0.18Ohm | 56 mJ | N-Channel | 1081pF @ 400V | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 18A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STW13NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw13nk60z-datasheets-6353.pdf | 600V | 13A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 550mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STW13N | 3 | Single | 150W | 1 | FET General Purpose Power | 22 ns | 14ns | 12 ns | 61 ns | 13A | 30V | SILICON | SWITCHING | 3.75V | 150W Tc | 52A | 400 mJ | 600V | N-Channel | 2030pF @ 25V | 550m Ω @ 4.5A, 10V | 4.5V @ 100μA | 13A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IRFP048PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp048pbf-datasheets-6359.pdf | 60V | 70A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 18mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 70A | 20V | 60V | 4V | 190W Tc | 18mOhm | 60V | N-Channel | 2400pF @ 25V | 4 V | 18mOhm @ 44A, 10V | 4V @ 250μA | 70A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQA13N80-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fqa13n80f109-datasheets-6365.pdf&product=onsemiconductor-fqa13n80f109-6830791 | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 8 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 18 hours ago) | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 60 ns | 150ns | 110 ns | 155 ns | 12.6A | 30V | SILICON | SWITCHING | 5V | 300W Tc | 50.4A | 0.75Ohm | 800V | N-Channel | 3500pF @ 25V | 750m Ω @ 6.3A, 10V | 5V @ 250μA | 12.6A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STF33N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf33n60dm2-datasheets-7979.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | STF33N | 650V | 35W Tc | N-Channel | 1870pF @ 100V | 130m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 43nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG25N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihg25n50ege3-datasheets-6287.pdf | TO-247-3 | 3 | 18 Weeks | 145mOhm | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 19 ns | 36ns | 29 ns | 57 ns | 26A | 20V | SILICON | SWITCHING | 250W Tc | TO-247AC | 50A | 273 mJ | 500V | N-Channel | 1980pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| STFU15NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/stmicroelectronics-stfu15nm65n-datasheets-6294.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | STFU1 | NOT SPECIFIED | 1 | R-PSFM-T3 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 30W Tc | TO-220AB | 48A | 0.38Ohm | 187 mJ | N-Channel | 983pF @ 50V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 33.3nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| FCP165N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcp165n65s3-datasheets-6297.pdf | TO-220-3 | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 154W Tc | N-Channel | 1500pF @ 400V | 165m Ω @ 9.5A, 10V | 4.5V @ 1.9mA | 19A Tc | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB21NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb21nm60nd-datasheets-7931.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | No SVHC | 170mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB21N | 4 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 16ns | 48 ns | 70 ns | 17A | 25V | SILICON | SWITCHING | 4V | 140W Tc | 68A | 600V | N-Channel | 1800pF @ 50V | 220m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 60nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| STB80NF03L-04-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -60°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb80nf03l041-datasheets-6308.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | yes | EAR99 | No | e3 | Tin (Sn) | STB80N | 3 | Single | 300W | 1 | FET General Purpose Power | 30 ns | 270ns | 95 ns | 110 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.0055Ohm | 30V | N-Channel | 5500pF @ 25V | 4m Ω @ 40A, 10V | 1V @ 250μA | 80A Tc | 110nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STV200N55F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stv200n55f3-datasheets-6311.pdf | PowerSO-10 Exposed Bottom Pad | Lead Free | 10 | 2.5MOhm | 10 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 250 | STV200 | 10 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 150ns | 50 ns | 110 ns | 200A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 800A | 55V | N-Channel | 6800pF @ 25V | 2.5m Ω @ 75A, 10V | 4V @ 250μA | 200A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIHA18N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha18n60ee3-datasheets-6314.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 34W Tc | TO-220AB | 18A | 45A | 0.202Ohm | 204 mJ | N-Channel | 1640pF @ 100V | 202m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP047N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp047n10-datasheets-6322.pdf | TO-220-3 | 10.1mm | 15.38mm | 4.7mm | Lead Free | 3 | 7 Weeks | 2.421g | No SVHC | 4.7MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | Single | 375W | 1 | FET General Purpose Power | 174 ns | 386ns | 244 ns | 344 ns | 164A | 20V | SILICON | SWITCHING | 3.5V | 375W Tc | TO-220AB | 656A | 100V | N-Channel | 15265pF @ 25V | 4.7m Ω @ 75A, 10V | 4.5V @ 250μA | 120A Tc | 210nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIHA22N60E-E3 | Vishay Siliconix | $3.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha22n60ee3-datasheets-6332.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 18 ns | 27ns | 35 ns | 66 ns | 21A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 4V | 35W Tc | TO-220AB | 56A | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STP200NF04 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp200nf04-datasheets-6250.pdf | 40V | 120A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 3 | EAR99 | No | e3 | Tin (Sn) | STP200 | 3 | Single | 310W | 1 | FET General Purpose Power | 30 ns | 320ns | 120 ns | 140 ns | 120A | 20V | SILICON | SWITCHING | 4V | 310W Tc | TO-220AB | 480A | 40V | N-Channel | 5100pF @ 25V | 3.7m Ω @ 90A, 10V | 4V @ 250μA | 120A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHH24N65E-T1-GE3 | Vishay Siliconix | $4.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh24n65et1ge3-datasheets-6253.pdf | 8-PowerTDFN | 18 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 23A | 650V | 202W Tc | N-Channel | 2814pF @ 100V | 150m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 116nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI33N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf33n60m2-datasheets-4194.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | 2.084002g | 108mOhm | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STI33N | 1 | Single | NOT SPECIFIED | 16 ns | 9.6ns | 9 ns | 109 ns | 26A | 25V | 600V | 190W Tc | N-Channel | 1781pF @ 100V | 125m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 45.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP220N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-fcp220n80-datasheets-6263.pdf | TO-220-3 | 12 Weeks | 1.8g | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 8541.21.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 23A | 800V | 278W Tc | N-Channel | 4560pF @ 100V | 220m Ω @ 11.5A, 10V | 4.5V @ 2.3mA | 23A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB180N55F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb180n55f3-datasheets-6105.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB180N | 3 | Single | 30 | 330W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 150ns | 50 ns | 110 ns | 120A | 20V | SILICON | SWITCHING | 330W Tc | 480A | 55V | N-Channel | 6800pF @ 25V | 3.5m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQA11N90-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqa11n90f109-datasheets-6271.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 4 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 16 hours ago) | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 65 ns | 135ns | 90 ns | 165 ns | 11.4A | 30V | SILICON | SWITCHING | 300W Tc | 45.6A | 0.96Ohm | 900V | N-Channel | 3500pF @ 25V | 960m Ω @ 5.7A, 10V | 5V @ 250μA | 11.4A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHH100N60E-T1-GE3 | Vishay Siliconix | $5.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh100n60et1ge3-datasheets-6171.pdf | 8-PowerTDFN | 18 Weeks | PowerPAK® 8 x 8 | 600V | 174W Tc | N-Channel | 1850pF @ 100V | 100mOhm @ 13.5A, 10V | 5V @ 250μA | 28A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF22N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihf22n60ee3-datasheets-6204.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.83mm | Lead Free | Unknown | 180mOhm | 3 | No | 227W | Single | 227W | 1 | TO-220 Full Pack | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHB25N50E-GE3 | Vishay Siliconix | $3.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb25n50ege3-datasheets-6209.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 250W Tc | 26A | 50A | 0.145Ohm | 273 mJ | N-Channel | 1980pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R150CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r150cfdatma1-datasheets-9715.pdf | TO-220-3 | 18 Weeks | 650V | 195.3W Tc | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPDD60R080G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-ipdd60r080g7xtma1-datasheets-6161.pdf | 10-PowerSOP Module | 2.5mm | 18 Weeks | NOT SPECIFIED | 1 | NOT SPECIFIED | 174W | 150°C | 19 ns | 61 ns | 29A | 20V | 174W Tc | 600V | N-Channel | 1640pF @ 400V | 80m Ω @ 9.7A, 10V | 4V @ 490μA | 29A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF20N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcp20n60-datasheets-4162.pdf | 600V | 20A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 13 Weeks | 2.27g | No SVHC | 190MOhm | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 39W | 1 | 62 ns | 140ns | 65 ns | 230 ns | 20A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 39W Tc | TO-220AB | 60A | 690 mJ | 600V | N-Channel | 3080pF @ 25V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| FCH125N65S3R0-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fch125n65s3r0f155-datasheets-6225.pdf | TO-247-3 | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | 650V | 181W Tc | N-Channel | 1940pF @ 400V | 125m Ω @ 12A, 10V | 4.5V @ 2.4mA | 24A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH26N60EF-T1-GE3 | Vishay Siliconix | $53.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh26n60eft1ge3-datasheets-6167.pdf | 8-PowerTDFN | 4 | 14 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 202W Tc | 67A | 0.141Ohm | 353 mJ | N-Channel | 2744pF @ 100V | 141m Ω @ 13A, 10V | 4V @ 250μA | 24A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK22A65X,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP50010E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup50010ege3-datasheets-6169.pdf | TO-220-3 | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 375W Tc | N-Channel | 10895pF @ 30V | 2m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 212nC @ 10V | 7.5V 10V | ±20V |
