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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSP296L6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp296e6327-datasheets-5056.pdf | TO-261-4, TO-261AA | 4 | EAR99 | No | 4 | 1.79W | 1 | 5.2 ns | 7.9ns | 21.4 ns | 37.4 ns | 1.1A | 20V | 100V | 1.79W Ta | N-Channel | 364pF @ 25V | 700m Ω @ 1.1A, 10V | 1.8V @ 400μA | 1.1A Ta | 17.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDP085N10A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp085n10a-datasheets-8772.pdf | TO-220-3 | yes | compliant | NO | FET General Purpose Power | Single | 100V | 188W Tc | 96A | N-Channel | 2695pF @ 50V | 8.5m Ω @ 96A, 10V | 4V @ 250μA | 96A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7424 | Alpha & Omega Semiconductor Inc. | $14.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | 8-PowerVDFN | 16 Weeks | 8 | 36W | 1 | FET General Purpose Power | 18A | 20V | Single | 30V | 3.1W Ta 36W Tc | 40A | N-Channel | 3450pF @ 15V | 5.2m Ω @ 20A, 10V | 2.3V @ 250μA | 18A Ta 40A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7107TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7107tr2pbf-datasheets-8690.pdf | 8-PowerTDFN | Lead Free | No SVHC | 8.5MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | 8-PQFN (5x6) | 3.11nF | 9.1 ns | 12ns | 6.5 ns | 20 ns | 14A | 20V | 75V | 2V | 42 ns | 8.5mOhm | 75V | N-Channel | 3110pF @ 25V | 8.5mOhm @ 45A, 10V | 4V @ 100μA | 14A Ta 75A Tc | 72nC @ 10V | 8.5 mΩ | ||||||||||||||||||||||||||||||||||||||||
| IRFR812PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr812trpbf-datasheets-4029.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | No SVHC | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 78W | 1 | FET General Purpose Power | 14 ns | 22ns | 17 ns | 24 ns | 3.6A | 20V | 3V | 78W Tc | 110 ns | 500V | N-Channel | 810pF @ 25V | 2.2 Ω @ 2.2A, 10V | 5V @ 250μA | 3.6A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSC205N10LS G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc205n10lsg-datasheets-8738.pdf | 8-PowerTDFN | 5 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 76W Tc | 7.4A | 180A | 0.0205Ohm | 60 mJ | N-Channel | 2900pF @ 50V | 20.5m Ω @ 45A, 10V | 2.4V @ 43μA | 7.4A Ta 45A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FCI25N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fci25n60nf102-datasheets-2697.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | yes | FET General Purpose Power | 25A | Single | 600V | 216W Tc | N-Channel | 3352pF @ 100V | 125m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7107TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh7107tr2pbf-datasheets-8690.pdf | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | Lead Free | 15 Weeks | No SVHC | 8 | EAR99 | No | Single | 3.6W | 1 | FET General Purpose Power | 9.1 ns | 12ns | 6.5 ns | 20 ns | 14A | 20V | 75V | 3.6W Ta 104W Tc | 75A | N-Channel | 3110pF @ 25V | 8.5m Ω @ 45A, 10V | 4V @ 100μA | 14A Ta 75A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDP045N10A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-220-3 | yes | FET General Purpose Power | 120A | Single | 100V | 263W Tc | N-Channel | 5270pF @ 50V | 4.5m Ω @ 100A, 10V | 4V @ 250μA | 120A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6782 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aon6782-datasheets-4063.pdf | 8-PowerSMD, Flat Leads | 16 Weeks | 8-DFN (5x6) | 6.78nF | 85A | 30V | 2.5W Ta 83W Tc | N-Channel | 6780pF @ 15V | 2.4mOhm @ 20A, 10V | 2V @ 250μA | 24A Ta 85A Tc | 51nC @ 10V | Schottky Diode (Body) | 2.4 mΩ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC883N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc883n03msgatma1-datasheets-8697.pdf | 8-PowerTDFN | 5 | 8 | EAR99 | No | DUAL | FLAT | 2.5W | 1 | R-PDSO-F5 | 15 ns | 7.6ns | 8 ns | 19 ns | 19A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34V | 34V | 2.5W Ta 57W Tc | 392A | 0.0046Ohm | 40 mJ | N-Channel | 3200pF @ 15V | 3.8m Ω @ 30A, 10V | 2V @ 250μA | 19A Ta 98A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| CC1202 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-247 | 800V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLH7134TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlh7134tr2pbf-datasheets-8701.pdf | 8-PowerTDFN | Lead Free | No SVHC | 3.3MOhm | 8 | No | 3.6W | Single | 3.6W | 8-PQFN (5x6) | 3.72nF | 21 ns | 75ns | 13 ns | 18 ns | 26A | 16V | 40V | 1V | 3.3mOhm | 40V | N-Channel | 3720pF @ 25V | 3.3mOhm @ 50A, 10V | 2.5V @ 100μA | 26A Ta 85A Tc | 58nC @ 4.5V | 3.3 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| BSC882N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc882n03msgatma1-datasheets-8717.pdf | 8-PowerTDFN | 5 | 8 | EAR99 | No | DUAL | FLAT | 2.5W | 1 | R-PDSO-F5 | 18 ns | 9ns | 9.4 ns | 24 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34V | 34V | 2.5W Ta 69W Tc | 400A | 0.0033Ohm | 75 mJ | N-Channel | 4300pF @ 15V | 2.6m Ω @ 30A, 10V | 2V @ 250μA | 22A Ta 100A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSC240N12NS3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc240n12ns3g-datasheets-8722.pdf | 8-PowerTDFN | 5 | yes | EAR99 | compliant | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 120V | 66W Tc | 37A | 148A | 0.024Ohm | 50 mJ | N-Channel | 1900pF @ 60V | 24m Ω @ 31A, 10V | 4V @ 35μA | 37A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDP150N10A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp150n10af102-datasheets-1732.pdf | TO-220-3 | yes | EAR99 | FET General Purpose Power | 50A | Single | 100V | 91W Tc | N-Channel | 1440pF @ 50V | 15m Ω @ 50A, 10V | 4V @ 250μA | 50A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC884N03MS G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc884n03msg-datasheets-8727.pdf | 8-PowerTDFN | 5 | yes | EAR99 | compliant | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34V | 34V | 2.5W Ta 50W Tc | 17A | 340A | 0.0054Ohm | 35 mJ | N-Channel | 2700pF @ 15V | 4.5m Ω @ 30A, 10V | 2V @ 250μA | 17A Ta 85A Tc | 34nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SSM3K7002BS,LF | Toshiba Semiconductor and Storage | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k7002bslf-datasheets-8736.pdf | TO-236-3, SC-59, SOT-23-3 | 16 Weeks | 3 | S-Mini | 17pF | 5 ns | 55 ns | 200mA | 20V | 60V | 200mW Ta | N-Channel | 17pF @ 25V | 2.1Ohm @ 500mA, 10V | 2.5V @ 250μA | 200mA Ta | 2.1 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP25N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fcp25n60nf102-datasheets-9693.pdf | TO-220-3 | yes | FET General Purpose Power | 25A | Single | 600V | 216W Tc | N-Channel | 3352pF @ 100V | 125m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8416DB-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8416dbt2e1-datasheets-8279.pdf | 6-UFBGA | 6 | 16A | 8V | 2.77W Ta 13W Tc | N-Channel | 1470pF @ 4V | 23m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 16A Tc | 26nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8132 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 341W Tc | 80A | 0.0016Ohm | 1904 mJ | N-Channel | 14100pF @ 15V | 1.6m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 350nC @ 13V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AOTF404 | Alpha & Omega Semiconductor Inc. | $16.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | TO-220-3 Full Pack | 16 Weeks | 26A | 105V | 2.2W Ta 43W Tc | N-Channel | 2445pF @ 25V | 28m Ω @ 20A, 10V | 4V @ 250μA | 5.8A Ta 26A Tc | 46nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT472 | Alpha & Omega Semiconductor Inc. | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | TO-220-3 | 1.9W | 1 | 140A | 20V | 75V | 1.9W Ta 417W Tc | N-Channel | 4500pF @ 30V | 8.9m Ω @ 30A, 10V | 3.9V @ 250μA | 10A Ta 140A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF240 | Alpha & Omega Semiconductor Inc. | $5.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 3.51nF | 83A | 40V | 2.1W Ta 33.3W Tc | N-Channel | 3510pF @ 20V | 2.6mOhm @ 20A, 10V | 2.2V @ 250μA | 21A Ta 83A Tc | 72nC @ 10V | 2.6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP027N08B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp027n08bf102-datasheets-3854.pdf | TO-220-3 | yes | unknown | NO | FET General Purpose Power | Single | 80V | 246W Tc | 120A | N-Channel | 13530pF @ 40V | 2.7m Ω @ 100A, 10V | 4.5V @ 250μA | 120A Tc | 178nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON2701 | Alpha & Omega Semiconductor Inc. | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | 6-WDFN Exposed Pad | 3A | 20V | 1.5W Ta | P-Channel | 700pF @ 10V | 120m Ω @ 3A, 4.5V | 1V @ 250μA | 3A Ta | 6.5nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF3N50 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aotf7t60pl-datasheets-2991.pdf | TO-220-3 Full Pack | 16 Weeks | TO-220-3F | 331pF | 3A | 500V | 31W Tc | N-Channel | 331pF @ 25V | 3Ohm @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 8nC @ 10V | 3 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF472 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aotf472-datasheets-8644.pdf | TO-220-3 Full Pack | 53A | 75V | 1.9W Ta 57.5W Tc | N-Channel | 4500pF @ 30V | 8.9m Ω @ 30A, 10V | 3.9V @ 250μA | 10A Ta 53A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI518 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aoi518-datasheets-8648.pdf | TO-251-3 Stub Leads, IPak | FET General Purpose Power | 46A | Single | 30V | 2.5W Ta 50W Tc | N-Channel | 951pF @ 15V | 8m Ω @ 20A, 10V | 2.6V @ 250μA | 18A Ta 46A Tc | 22.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR788DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir788dpt1ge3-datasheets-8652.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | 5 | 15 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | FET General Purpose Powers | R-PDSO-C5 | 21 ns | 11ns | 9 ns | 29 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 48W Tc | 0.0034Ohm | 30V | N-Channel | 2873pF @ 15V | 3.4m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 75nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V |
