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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AUIRF3315STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf3315strl-datasheets-0176.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9 Weeks | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 150V | 3.8W Ta 94W Tc | 21A | N-Channel | 1300pF @ 25V | 82m Ω @ 12A, 10V | 4V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RP1E090XNTCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-rp1e090xntcr-datasheets-9989.pdf | 6-SMD, Flat Leads | MPT6 | 440pF | 9A | 30V | 2W Ta | N-Channel | 440pF @ 10V | 17mOhm @ 9A, 10V | 2.5V @ 1mA | 9A Ta | 6.8nC @ 5V | 17 mΩ | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4510PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfs4510trlpbf-datasheets-7679.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 52 Weeks | No SVHC | 3 | EAR99 | Single | 140W | 1 | 13 ns | 32ns | 28 ns | 61A | 20V | 100V | 3V | 140W Tc | N-Channel | 3180pF @ 50V | 3 V | 13.9m Ω @ 37A, 10V | 4V @ 100μA | 61A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| RP1E125XNTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1e125xntr-datasheets-0020.pdf | 6-SMD, Flat Leads | 4 | yes | EAR99 | e2 | TIN COPPER | DUAL | 260 | 6 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F4 | 12.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta | 36A | 0.014Ohm | N-Channel | 1000pF @ 10V | 12m Ω @ 12.5A, 10V | 2.5V @ 1mA | 12.5A Ta | 12.7nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR3504TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/infineontechnologies-auirfr3504trl-datasheets-0076.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 140W Tc | TO-252AA | 87A | 350A | 0.0092Ohm | 480 mJ | N-Channel | 2150pF @ 25V | 9.2m Ω @ 30A, 10V | 4V @ 250μA | 56A Tc | 71nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUD50N02-06P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50n0206pe3-datasheets-9904.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 15 Weeks | 1.437803g | 6mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 6.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 10ns | 9 ns | 24 ns | 26A | 20V | 20V | SILICON | DRAIN | SWITCHING | 6.8W Ta 65W Tc | 20V | N-Channel | 2550pF @ 10V | 3 V | 6m Ω @ 20A, 10V | 3V @ 250μA | 50A Tc | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| EPC2016 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2016-datasheets-9941.pdf | Die | Die | 520pF | 11A | 100V | N-Channel | 520pF @ 50V | 16mOhm @ 11A, 5V | 2.5V @ 3mA | 11A Ta | 5.2nC @ 5V | 16 mΩ | 5V | +6V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44STRRPBF | Vishay Siliconix | $2.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 1.437803g | 8 | yes | EAR99 | No | GULL WING | 260 | 4 | 1 | Single | 40 | 1 | R-PSSO-G2 | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | SILICON | SWITCHING | 3.7W Ta 150W Tc | 200A | 60V | N-Channel | 1900pF @ 25V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| RP1L080SNTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1l080sntr-datasheets-9981.pdf | 6-SMD, Flat Leads | 6 | EAR99 | DUAL | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | R-PDSO-F6 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2W Ta | 8A | 32A | 0.028Ohm | N-Channel | 1700pF @ 10V | 24m Ω @ 8A, 10V | 3V @ 1mA | 8A Ta | 40nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RP1H065SPTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1h065sptr-datasheets-9982.pdf | 6-SMD, Flat Leads | 6 | EAR99 | DUAL | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | R-PDSO-F6 | 6.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45V | 45V | 2W Ta | 26A | 0.046Ohm | P-Channel | 3200pF @ 10V | 31m Ω @ 6.5A, 10V | 3V @ 1mA | 6.5A Ta | 28nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R280C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipb65r280c6atma1-datasheets-9238.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | no | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 104W | 1 | Not Qualified | R-PSSO-G2 | 13 ns | 11ns | 12 ns | 105 ns | 13.8A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 104W Tc | 39A | 0.28Ohm | 290 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD60R600CPBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r600cpbtma1-datasheets-9495.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | No | 60W | 1 | PG-TO252-3 | 550pF | 17 ns | 12ns | 17 ns | 75 ns | 6.1A | 20V | 600V | 60W Tc | N-Channel | 550pF @ 100V | 600mOhm @ 3.3A, 10V | 3.5V @ 220μA | 6.1A Tc | 27nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS159NL6906HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss159ne6327-datasheets-7184.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 17 Weeks | 3 | EAR99 | Tin | AEC-Q101 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 2.9ns | 230mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 5 pF | N-Channel | 44pF @ 25V | 3.5 Ω @ 160mA, 10V | 2.4V @ 26μA | 230mA Ta | 2.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RP1E070XNTCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1e070xntcr-datasheets-9933.pdf | 6-SMD, Flat Leads | MPT6 | 390pF | 7A | 30V | 2W Ta | N-Channel | 390pF @ 10V | 28mOhm @ 7A, 10V | 2.5V @ 1mA | 7A Ta | 5.8nC @ 5V | 28 mΩ | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSB017N03LX3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsb017n03lx3g-datasheets-9600.pdf | 3-WDSON | 3 | compliant | YES | BOTTOM | NO LEAD | 1 | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 57W Tc | 147A | 400A | 0.0017Ohm | 225 mJ | N-Channel | 7800pF @ 15V | 1.7m Ω @ 30A, 10V | 2.2V @ 250μA | 32A Ta 147A Tc | 102nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RP1E100XNTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1e100xntr-datasheets-9988.pdf | 6-SMD, Flat Leads | Lead Free | 4 | yes | EAR99 | e2 | TIN COPPER | DUAL | 260 | 6 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F4 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta | 36A | 0.018Ohm | N-Channel | 800pF @ 10V | 13m Ω @ 10A, 10V | 2.5V @ 1mA | 10A Ta | 11nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK761R3-30E,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk761r330e118-datasheets-9921.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 3 | 2013-06-14 00:00:00 | 30V | 357W Tc | N-Channel | 11960pF @ 25V | 1.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 154nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK653R3-30C,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk653r330c127-datasheets-9934.pdf | TO-220-3 | 3 | Tin | 3 | Single | 204W | 22 ns | 59ns | 113 ns | 209 ns | 100A | 20V | 30V | 204W Tc | 30V | N-Channel | 6960pF @ 25V | 3.3m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 114nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6246-75C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/nexperiausainc-buk624675c118-datasheets-9950.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | Tin | 3 | Single | 60W | 9.5 ns | 17.8ns | 35 ns | 37 ns | 22A | 20V | 75V | 60W Tc | 75V | N-Channel | 1280pF @ 25V | 46m Ω @ 10A, 10V | 2.8V @ 1mA | 22A Tc | 21.4nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RP1E075RPTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1e075rptr-datasheets-9954.pdf | 6-SMD, Flat Leads | 6 | yes | EAR99 | e2 | TIN COPPER | DUAL | 260 | 6 | 10 | 1 | Other Transistors | Not Qualified | R-PDSO-F6 | 7.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta | 30A | 0.021Ohm | P-Channel | 1900pF @ 10V | 21m Ω @ 7.5A, 10V | 2.5V @ 1mA | 7.5A Ta | 21nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N03-04P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0304pe3-datasheets-9890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 12ns | 10 ns | 40 ns | 110A | 20V | SILICON | SWITCHING | 1V | 3.75W Ta 120W Tc | 0.0042Ohm | 30V | N-Channel | 5100pF @ 25V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 110A Tc | 60nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIE876DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie876dft1ge3-datasheets-9833.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | 30 | 5.2W | 1 | FET General Purpose Power | R-PDSO-N4 | 22 ns | 10ns | 10 ns | 25 ns | 60mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 5.2W Ta 125W Tc | 22A | 60A | 60V | N-Channel | 3100pF @ 30V | 6.1m Ω @ 20A, 10V | 4.4V @ 250μA | 60A Tc | 77nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSD314SPEL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsd314spel6327htsa1-datasheets-9612.pdf | 6-VSSOP, SC-88, SOT-363 | 11 Weeks | 30V | 500mW Ta | P-Channel | 294pF @ 15V | 140m Ω @ 1.5A, 10V | 2V @ 6.3μA | 1.5A Ta | 2.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD816SNL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsd816snl6327htsa1-datasheets-9852.pdf | 6-VSSOP, SC-88, SOT-363 | 6 | 12 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | Not Qualified | 5.3 ns | 9ns | 2.2 ns | 11 ns | 1.4A | 8V | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 500mW Ta | 10 pF | N-Channel | 180pF @ 10V | 160m Ω @ 1.4A, 2.5V | 950mV @ 3.7μA | 1.4A Ta | 0.6nC @ 2.5V | 1.8V 2.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SI5855CDC-T1-E3 | Vishay Siliconix | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5855cdct1e3-datasheets-9830.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 1.9W | 1 | 11 ns | 34ns | 34 ns | 22 ns | -3.7A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 1.3W Ta 2.8W Tc | 2.5A | -20V | P-Channel | 276pF @ 10V | 144m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.7A Tc | 6.8nC @ 5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| IPD250N06N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd250n06n3gbtma1-datasheets-9426.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 36W Tc | TO-252AA | 28A | 112A | 0.025Ohm | 13 mJ | N-Channel | 1200pF @ 30V | 25m Ω @ 28A, 10V | 4V @ 11μA | 28A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SUP90N06-5M0P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Strip | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup90n065m0pe3-datasheets-9886.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 3.75W | 1 | 23 ns | 15ns | 8 ns | 36 ns | 90A | 20V | 60V | SILICON | DRAIN | SWITCHING | 3.75W Ta 300W Tc | TO-220AB | 240A | 0.005Ohm | 245 mJ | N-Channel | 6190pF @ 30V | 5m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSP320SL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp320sl6433htma1-datasheets-8904.pdf | TO-261-4, TO-261AA | 4 | 1.8W | 1 | PG-SOT223-4 | 340pF | 2.9A | 20V | 60V | 1.8W Ta | N-Channel | 340pF @ 25V | 120mOhm @ 2.9A, 10V | 4V @ 20μA | 2.9A Ta | 12nC @ 10V | 120 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4410BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4410bdyt1e3-datasheets-9808.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 186.993455mg | Unknown | 13.5mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.4W | 1 | FET General Purpose Powers | 10 ns | 10ns | 10 ns | 40 ns | 7.5A | 20V | SILICON | SWITCHING | 1V | 1.4W Ta | 30V | N-Channel | 1 V | 13.5m Ω @ 10A, 10V | 3V @ 250μA | 7.5A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SUD45P03-10-E3 | Vishay Siliconix | $1.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud45p0310e3-datasheets-9915.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 10mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 20 | 4W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 15 ns | 375ns | 140 ns | 100 ns | -15A | 20V | -30V | SILICON | DRAIN | 30V | -3V | 4W Ta 70W Tc | P-Channel | 6000pF @ 25V | -1 V | 10m Ω @ 15A, 10V | 3V @ 250μA | 150nC @ 10V | 4.5V 10V | ±20V |
